JP3422495B2 - Manufacturing method of ceramic DBC substrate - Google Patents
Manufacturing method of ceramic DBC substrateInfo
- Publication number
- JP3422495B2 JP3422495B2 JP28212291A JP28212291A JP3422495B2 JP 3422495 B2 JP3422495 B2 JP 3422495B2 JP 28212291 A JP28212291 A JP 28212291A JP 28212291 A JP28212291 A JP 28212291A JP 3422495 B2 JP3422495 B2 JP 3422495B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- coating layer
- circuit board
- manufacturing
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 31
- 239000000919 ceramic Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 71
- 229910052802 copper Inorganic materials 0.000 claims description 71
- 239000010949 copper Substances 0.000 claims description 71
- 239000011247 coating layer Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000005751 Copper oxide Substances 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910002855 Sn-Pd Inorganic materials 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【産業上の利用分野】本発明は、セラミックスＤＢＣ基
板の製造方法に関し、特に本発明は、銅回路板をセラミ
ックス基板に強固に接着させることのできるセラミック
スＤＢＣ基板の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a ceramics DBC substrate, and more particularly, the present invention relates to a method of manufacturing a ceramics DBC substrate capable of firmly adhering a copper circuit board to the ceramics substrate.
【０００２】[0002]
【従来の技術】最近の半導体部品は、大電力化、モジュ
ール化、高集積化、高信頼性化および低価格化が急速に
進んでいる。これらの実現のためにセラミックス基板上
に直接銅回路板を接着し、放熱性を大幅に向上させ、か
つ銅回路上に直接半導体を実装することのできる放熱性
の優れた半導体実装基板（以下、ＤＢＣ基板と称する）
が実現されており、例えばパワートランジスタモジュー
ル、高周波パワートランジスタ、大容量パワートランジ
スタあるいはイグナイタ用パワートランジスタ等にアル
ミナＤＢＣ基板や窒化アルミニウムＤＢＣ基板が実用化
されている。2. Description of the Related Art Recent semiconductor components are rapidly increasing in power consumption, modularization, high integration, high reliability and low price. In order to realize these, a copper circuit board is directly bonded onto a ceramic substrate to significantly improve heat dissipation, and a semiconductor mounting board with excellent heat dissipation capable of directly mounting a semiconductor on the copper circuit (hereinafter, (Referred to as DBC substrate)
Alumina DBC substrates and aluminum nitride DBC substrates have been put to practical use in, for example, power transistor modules, high frequency power transistors, large capacity power transistors, power transistors for igniters and the like.
【０００３】[0003]
【発明が解決しようとする課題】ところで、前述の如き
ＤＢＣ基板における銅回路板の接着方法としては、基板
表面の酸化物とＣｕＯの共融相を介して接着する方法が
一般的であるが、処理条件のコントロールが難しく、し
かも接着強度の点でやや信頼性に欠ける欠点を有してい
た。By the way, as a method of adhering a copper circuit board on a DBC substrate as described above, a method of adhering an oxide on the surface of the substrate and a eutectic phase of CuO is generally used. It was difficult to control the processing conditions, and had a drawback that it was slightly unreliable in terms of adhesive strength.
【０００４】本発明は、このような課題を解決するため
になされたものであり、前記ＤＢＣ基板における銅回路
板を強固に接着する方法を提供することを目的とする。The present invention has been made to solve the above problems, and an object thereof is to provide a method for firmly adhering a copper circuit board on the DBC substrate.
【０００５】[0005]
【課題を解決するための手段】本発明者は、このような
課題を解決すべく種々検討した結果、セラミック基板の
表面に凹凸を形成した後、化学銅めっきを施して金属銅
被膜層を形成した後、前記金属銅被膜層を空気中で加熱
することにより、該金属銅被覆層の表面に酸化被膜を形
成し、その酸化被膜を有する側の前記金属銅被膜層の表
面に銅回路板を載置して加熱することにより、極めて強
固に接着することができることを見出した。As a result of various studies to solve such problems, the present inventor has found that after forming irregularities on the surface of a ceramic substrate , chemical copper plating is performed to form a metallic copper coating layer. And then heat the metal copper coating layer in air
To form an oxide film on the surface of the metallic copper coating layer.
Form by heating by placing the copper circuit board on the surface of the metallic copper film layer on the side having the oxide coating of that, found that it is possible to adhere very firmly.
【０００６】[0006]
【課題を解決するための手段】次に、本発明のセラミッ
クＤＢＣ基板について詳細に説明する。Means for Solving the Problems will be described in detail with the ceramic DBC substrate of the present invention.
【０００７】本発明によれば、セラミックス基板の表面
に、化学銅めっき法により金属銅被膜層を形成すること
が必要である。その理由は、セラミックス基板の表面に
直接形成される金属銅被膜層は、その後に銅回路板が接
着されるため、極めて強固にセラミックス基板の表面に
接着していることが重要であり、前記化学銅めっき法
は、セラミックス基板の表面に極めて強固に接着された
金属銅被膜層を形成することができるからである。な
お、前記セラミックス基板の表面は、予め清浄化処理や
アンカーとなる凹凸加工を施しておく。 According to the invention, the surface of the ceramic substrate, it is necessary to form a metallic copper film layer by reduction Gakudo plating. The reason is that metallic copper coating layer formed directly on the surface of the ceramic substrate, then to the copper circuit plate is bonded, it is important that they are bonded very strongly the surface of the ceramic substrate, before Symbol of Gakudo plating
This is because it is possible to form a metallic copper film layer which is extremely firmly adhered to the surface of the ceramics substrate. The surface of the ceramic substrate is previously subjected to a cleaning process and a concave-convex process serving as an anchor .
【０００８】前記金属銅被膜層の厚さは、０．３〜５μ
ｍの範囲であることが有利である。その理由は、０．３
μｍより薄いと金属銅被膜層に銅回路板を効率的に接着
させることが困難であるからであり、一方５μｍより厚
い金属銅被膜層は、形成に長時間を要し効率的でないか
らである。また本発明によれば、前記スパッタリング
法、化学銅めっき法あるいは真空蒸着法によって形成さ
れた金属被膜層は、形成された後１０６８〜１０７５℃
の温度で熱処理を施すことが有利である。The thickness of the metallic copper coating layer is 0.3-5 μm.
Advantageously, it is in the range m. The reason is 0.3
This is because if it is thinner than μm, it is difficult to efficiently adhere the copper circuit board to the metal copper coating layer, while on the other hand, the metal copper coating layer thicker than 5 μm takes a long time to form and is not efficient. . Further, according to the present invention, the metal coating layer formed by the sputtering method, the chemical copper plating method or the vacuum deposition method is 1068 to 1075 ° C. after being formed.
It is advantageous to carry out the heat treatment at a temperature of.
【０００９】本発明によれば、セラミックス基板の表面
の金属銅被膜層の表面に形成した酸化被膜を介して銅回
路板を載置し加熱することが必要である。その理由は、
金属銅被膜層の上に酸化銅を介して銅回路板を載置し加
熱することにより、酸化被膜によって銅の融点を低下さ
せることができ、極めて容易にしかも強固に金属銅被膜
層と銅回路板を接着することができるからである。な
お、前記スパッタリング法、化学銅めっき法および真空
蒸着法等によって金属銅被膜層を直接厚く形成すること
も考えられるが、前記方法はいずれも膜の生成速度が極
めて遅いため、効率的でない。According to the present invention, it is necessary to place and heat the copper circuit board through the oxide film formed on the surface of the metal copper film layer on the surface of the ceramic substrate. The reason is,
By placing a copper circuit board on the metallic copper coating layer via copper oxide and heating it, the melting point of copper can be lowered by the oxide coating , and the metallic copper coating layer and the copper circuit can be very easily and firmly bonded. This is because the plates can be bonded. Although it is conceivable to directly form a thick metal copper coating layer by the sputtering method, the chemical copper plating method, the vacuum deposition method, or the like, any of the above methods is not efficient because the rate of film formation is extremely slow.
【００１０】本発明によれば、前記金属銅被膜層と銅回
路板との間の酸化被膜は、金属銅被膜層の表面に形成さ
れた酸化被膜であることが好ましい。その理由は、前記
酸化被膜は、前記金属銅被膜層と銅回路板の表面の融点
を低下させて、金属銅被膜層と銅回路板を融合させる目
的で介在させるものであり、前記金属銅被膜層の表面に
形成された酸化被膜は、極めて効率的に金属銅被膜層あ
るいは銅回路板の表面を溶融させることができるからで
ある。According to the present invention, the oxide film between the metal copper film layer and the copper circuit board is preferably an oxide film formed on the surface of the metal copper film layer . The reason is that the oxide film lowers the melting points of the surfaces of the metallic copper coating layer and the copper circuit board, and is interposed for the purpose of fusing the metallic copper coating layer and the copper circuit board. This is because the oxide film formed on the surface of the layer can extremely efficiently melt the surface of the metal copper film layer or the surface of the copper circuit board.
【００１１】本発明によれば、前記酸化被膜の厚さの合
計が０．３〜５μｍであることが好ましい。その理由
は、０．３μｍより薄いと金属銅被膜層あるいは銅回路
板の表面を効率的に溶融させることが困難であるからで
あり、一方５μｍより厚いと溶融量の制御が困難にな
り、均一な接着層を形成することが困難になるからであ
る。According to the present invention, the total thickness of the oxide film is preferably 0.3 to 5 μm. The reason is that if it is thinner than 0.3 μm, it is difficult to efficiently melt the surface of the metallic copper coating layer or the copper circuit board, while if it is thicker than 5 μm, it becomes difficult to control the melting amount, and it becomes uniform. This is because it becomes difficult to form an excellent adhesive layer.
【００１２】本発明によれば、前記セラミックス基板の
表面の金属銅被膜層の上に酸化被膜を介して銅回路板を
載置し加熱する際の加熱温度は、１０６８〜１０７５℃
の範囲内であることが好ましい。その理由は、１０６８
℃より低いと酸化銅と銅の共晶相を形成することができ
ず、一方１０７５℃より高いと銅回路板自体が溶融して
しまうからである。According to the present invention, the heating temperature for placing and heating the copper circuit board on the metallic copper coating layer on the surface of the ceramic substrate via the oxide coating is 1068 to 1075 ° C.
It is preferably within the range. The reason is 1068
If the temperature is lower than 0 ° C, the eutectic phase of copper oxide and copper cannot be formed, while if the temperature is higher than 1075 ° C, the copper circuit board itself is melted.
【００１３】本発明によれば、前記セラミックス基板と
しては、酸化アルミニウム、酸化ベリリウムあるいは窒
化アルミニウム等のセラミックス基板を使用することが
できる。According to the present invention, as the ceramic substrate, a ceramic substrate made of aluminum oxide, beryllium oxide, aluminum nitride or the like can be used.
【００１４】次に本発明を実施例によって詳細に説明す
る。Next, the present invention will be described in detail with reference to examples.
【００１５】[0015]
【実施例】（実施例１）
（１） 市販のアルミナ焼結体基板の表面をＧＣ＃７０
０の砥粒で研削した後、イソプロピルアルコールの５％
水溶液中に浸漬し、超音波洗浄した後、Ｓｎ−Ｐｄ液に
浸漬し核付与処理を行い、化学銅めっき液に０．５時間
浸漬して銅めっき処理を行った。
（２） 前記銅めっき処理後、４００℃の空気中で１時
間加熱した後、さらに１０００℃の窒素ガス中で１時間
加熱し、次いで厚さ０．３ｍｍの銅板を載せて１０７２
℃の窒素ガス中で１０分間加熱して銅板を接合した。上
記工程によって得られたセラミックス基板と銅板とは極
めて強固に接着していることが認められた。Example (Example 1) (1) The surface of a commercially available alumina sintered body substrate was GC # 70.
5% of isopropyl alcohol after grinding with 0 grain
After immersion in an aqueous solution and ultrasonic cleaning, it was immersed in a Sn-Pd solution for nucleation treatment, and immersed in a chemical copper plating solution for 0.5 hours to perform copper plating treatment. (2) After the copper plating treatment, it is heated in air at 400 ° C. for 1 hour, then further heated in nitrogen gas at 1000 ° C. for 1 hour, and then a copper plate having a thickness of 0.3 mm is placed on it 1072
The copper plates were joined by heating in nitrogen gas at 0 ° C for 10 minutes. It was confirmed that the ceramic substrate and the copper plate obtained by the above steps were extremely strongly bonded.
【００１６】（実施例２）
（１） 平均粒径が０．８μｍ、酸素含有率が０．９重
量％の窒化アルミニウム粉末１０００ｇと、純度が９
９．９重量％のＹ2 Ｏ3 ５０ｇと、アクリル樹脂系バイ
ンダー１１０ｇと、エチルアルコール１８０ｇと酢酸エ
チル１８０ｇとをボールミル中に装入し、２４時間混合
した後、ドクターブレード法で１ｍｍの厚さのシートを
成形した。
（２） 前記工程で得たシート状成形体を、脱脂炉に装
入し窒素気流中で３００℃迄２℃／ｍｉｎの割合で昇温
し、脱脂処理を行った。
（３） 前記脱脂処理を施した接合体をＡｌＮ坩堝中に
装入し、１８５０℃で２時間焼結した。坩堝周辺の雰囲
気は窒素気流とした。
（４） 前記工程で得た焼結体をＧＣ＃７００の砥粒で
研削して表面のＹＡＧ層を除去した後、１００℃の蒸留
水中に２時間浸漬した。
（５） さらに、約７０℃に調節されたＮａＯＨ１５
％、ｍ−エタノールアミン２％，水８３％の混合液に２
分間浸漬して脱脂処理した後、Ｓｎ−Ｐｄ液に浸漬し核
付与処理を行い、化学銅めっき液に０．５時間浸漬して
銅めっき処理を行い、０．５μｍのめっき層を形成し
た。
（６） 前記銅めっき処理後、４００℃の空気中で１時
間加熱した後さらに１２００℃の窒素気流中で１時間加
熱し、厚さ０．３ｍｍの銅板を載せて１０７２℃の窒素
ガス中で１０分間加熱して銅板を接合した。上記工程に
よって得られたセラミックス基板上の化学銅めっき層と
銅板とは極めて強固に接着していることが認められた。Example 2 (1) 1000 g of aluminum nitride powder having an average particle size of 0.8 μm and an oxygen content of 0.9% by weight, and a purity of 9
50 g of 9.9% by weight of Y 2 O 3 , 110 g of an acrylic resin binder, 180 g of ethyl alcohol and 180 g of ethyl acetate were charged in a ball mill and mixed for 24 hours, and then a thickness of 1 mm by a doctor blade method. Sheet was molded. (2) The sheet-shaped molded product obtained in the above step was placed in a degreasing furnace and heated to 300 ° C. at a rate of 2 ° C./min in a nitrogen stream to perform degreasing treatment. (3) The degreased bonded body was placed in an AlN crucible and sintered at 1850 ° C. for 2 hours. The atmosphere around the crucible was a nitrogen stream. (4) The sintered body obtained in the above step was ground with abrasive grains of GC # 700 to remove the surface YAG layer, and then immersed in distilled water at 100 ° C. for 2 hours. (5) Furthermore, NaOH 15 adjusted to about 70 ° C
%, M-ethanolamine 2%, water 83% 2
After immersion for a minute and degreasing treatment, it was immersed in an Sn-Pd solution for nucleation treatment, and immersed in a chemical copper plating solution for 0.5 hour for copper plating treatment to form a 0.5 μm plated layer. (6) After the copper plating treatment, it is heated in air at 400 ° C. for 1 hour and further heated in a nitrogen stream at 1200 ° C. for 1 hour, and a copper plate having a thickness of 0.3 mm is placed on it in nitrogen gas at 1072 ° C. It heated for 10 minutes and joined the copper plate. It was confirmed that the chemical copper plating layer on the ceramic substrate obtained by the above process and the copper plate were extremely strongly bonded.
【００１７】（実施例３）
（１） 前記実施例２と同様にして得た焼結体をＧＣ＃
７００の砥粒で研削して表面のＹＡＧ層を除去した後、
１００℃の蒸留水中に２時間浸漬した。
（２） さらに、イソプロピルアルコールの５％水溶液
中に浸漬し、超音波洗浄した後、０．７μｍ／時間の析
出速度で銅スパッタ処理を施し、２μｍの厚さのスパッ
タ膜を形成した。
（３） 次いで、４００℃の空気中で１時間加熱した
後、１０００℃の窒素ガス中で１時間加熱し、次いで厚
さ０．３ｍｍの銅板を載せて１０７２℃の窒素ガス中で
１０分間加熱して銅板を接合した。
上記工程によって得られたセラミックス基板と銅板とは
極めて強固に接着していることが認められた。Example 3 (1) A sintered body obtained in the same manner as in Example 2 was used as GC #.
After grinding with 700 abrasive grains to remove the YAG layer on the surface,
It was immersed in distilled water at 100 ° C. for 2 hours. (2) Further, after immersion in a 5% aqueous solution of isopropyl alcohol and ultrasonic cleaning, copper sputter processing was performed at a deposition rate of 0.7 μm / hour to form a sputtered film having a thickness of 2 μm. (3) Next, after heating in air at 400 ° C. for 1 hour, heating in nitrogen gas at 1000 ° C. for 1 hour, then placing a copper plate having a thickness of 0.3 mm and heating in nitrogen gas at 1072 ° C. for 10 minutes Then, the copper plates were joined. It was confirmed that the ceramic substrate and the copper plate obtained by the above steps were extremely strongly bonded.
【００１８】[0018]
【発明の効果】本発明によれば、セラミックス基板の表
面に薄い金属銅被膜層を形成した後、前記金属銅被膜層
の上に酸化銅を介して銅板を載置し加熱することによ
り、極めて強固に接着することができる。According to the present invention, a thin metal copper coating layer is formed on the surface of a ceramic substrate, and then a copper plate is placed on the metal copper coating layer via copper oxide and heated, whereby Can be firmly bonded.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H05K 3/38 C04B 37/02 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H05K 3/38 C04B 37/02
Claims (3)
後、化学銅めっきを施して金属銅被膜層を形成した後、
前記金属銅被膜層を空気中で加熱することにより該金属
銅被覆層の表面に酸化被膜を形成し、その酸化被膜を有
する側の前記金属銅被膜層の表面に銅回路板を載置して
加熱することを特徴とするセラミックスＤＢＣ基板の製
造方法。1. An unevenness is formed on the surface of a ceramic substrate .
After that, after performing a chemical copper plating to form a metal copper coating layer,
By heating the metal copper coating layer in air
An oxide film is formed on the surface of the copper coating layer, ceramic DBC substrate manufacturing method, characterized in that for mounting and heating the copper circuit board on the surface of the metallic copper film layer on the side having an oxide film of it.
μｍであることを特徴とする請求項１記載のセラミック
ＤＢＣ基板の製造方法。2. The oxide coating has a thickness of 0.3-5.
The ceramic according to claim 1, characterized in that
Method of manufacturing DBC substrate .
６８〜１０７５℃の温度で行うことを特徴とする請求項
１または２に記載のセラミックＤＢＣ基板の製造方法。 3. Heating after placing a copper circuit board in nitrogen is 10
It is performed at a temperature of 68 to 1075 ° C.
3. The method for manufacturing a ceramic DBC substrate according to 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28212291A JP3422495B2 (en) | 1991-10-01 | 1991-10-01 | Manufacturing method of ceramic DBC substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28212291A JP3422495B2 (en) | 1991-10-01 | 1991-10-01 | Manufacturing method of ceramic DBC substrate |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002369438A Division JP3636706B2 (en) | 2002-12-20 | 2002-12-20 | Ceramic DBC substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0690083A JPH0690083A (en) | 1994-03-29 |
| JP3422495B2 true JP3422495B2 (en) | 2003-06-30 |
Family
ID=17648412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28212291A Expired - Lifetime JP3422495B2 (en) | 1991-10-01 | 1991-10-01 | Manufacturing method of ceramic DBC substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3422495B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5906310A (en) * | 1994-11-10 | 1999-05-25 | Vlt Corporation | Packaging electrical circuits |
| US5876859A (en) * | 1994-11-10 | 1999-03-02 | Vlt Corporation | Direct metal bonding |
| US5945130A (en) * | 1994-11-15 | 1999-08-31 | Vlt Corporation | Apparatus for circuit encapsulation |
| JP2732823B2 (en) * | 1995-02-02 | 1998-03-30 | ヴィエルティー コーポレーション | Soldering method |
| FR2830008B1 (en) * | 2001-09-21 | 2004-06-11 | Alstom | PROCESS FOR IMPROVING THE ADHESION PROPERTIES OF A CERAMIC SUBSTRATE OF THE NON-OXIDE FAMILY FOR BONDING |
| TW200927481A (en) * | 2007-12-18 | 2009-07-01 | Wen-Jung Jiang | Method of producing ceramic-copper foil laminated board |
| US8194391B2 (en) | 2007-12-21 | 2012-06-05 | Murata Manufacturing Co., Ltd. | Multilayer ceramic electronic component and manufacturing method thereof |
| JP5239731B2 (en) * | 2007-12-21 | 2013-07-17 | 株式会社村田製作所 | Multilayer ceramic electronic component and manufacturing method thereof |
| CN108688278A (en) * | 2018-04-11 | 2018-10-23 | 南京大学 | A kind of PTFE bases PCB copper-clad plates and compression method |
| CN118239797B (en) * | 2024-03-26 | 2024-09-17 | 江苏富乐华功率半导体研究院有限公司 | A method for preparing a high-reliability ZTA ceramic copper-clad substrate |
-
1991
- 1991-10-01 JP JP28212291A patent/JP3422495B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0690083A (en) | 1994-03-29 |
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