JP2007103956A - Substrate processing equipment - Google Patents

Abstract

Disclosed is a substrate processing apparatus that can prevent chemicals from splashing on a surface that does not need to be processed and can improve processing throughput.
A substrate processing apparatus for processing a substrate W, comprising: a chemical solution supply nozzle 61 for supplying a chemical solution to a peripheral portion of the substrate W; and a position close to the upper surface of the substrate W and a position away from the upper surface of the substrate W. And a top plate 72 that moves relatively, and the chemical supply nozzle 61 is configured to be movable. For example, when the top plate 72 is moved to a position close to the upper surface of the substrate W during processing so as to cover a surface that does not need to be processed, it is possible to prevent the chemical solution from being scattered on the surface that does not need to be processed. it can.
[Selection] Figure 7

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for cleaning a substrate such as a semiconductor wafer or glass for an LCD substrate.

  In the manufacturing process of a semiconductor device, when a metal film such as copper is laminated on a semiconductor wafer (hereinafter referred to as “wafer”), there is a problem that the metal film is easily peeled around the wafer. When peeling occurs around the wafer, peeling may gradually progress from there to a region where a semiconductor device is formed. In order to prevent such a phenomenon, peripheral portion removal processing is performed in which the metal film on the peripheral portion of the wafer is removed in advance. FIG. 21 is an explanatory diagram of a method for performing peripheral portion removal processing by a conventional substrate processing apparatus. The wafer W is rotated by the holding means, and the processing liquid is supplied to the peripheral portion of the wafer W by the supply device 140 such as a nozzle, and the corners of the metal film 141 are removed obliquely. On the other hand, pure water is supplied from the center upper portion of the wafer W by the supply device 142 to prevent the processing liquid from adhering to a portion other than the portion to which the processing liquid is supplied, and the processing liquid is pushed to the outer periphery of the wafer W. Yes.

  However, in the conventional substrate processing apparatus, in order to obtain a centrifugal force that pushes the processing liquid to the outer periphery of the wafer, a considerably high rotational speed is required. In addition, since pure water is supplied to the entire wafer, the entire wafer needs to be dried in spite of the peripheral processing alone. As a result, the throughput of wafer processing has been reduced.

  Accordingly, an object of the present invention is to provide a substrate processing apparatus capable of performing stable processing even at low speed rotation and improving processing throughput.

  In order to solve the above problems, according to the present invention, there is provided a substrate processing apparatus for processing a substrate, a chemical supply nozzle for supplying a chemical to a peripheral portion of the substrate, a position close to the substrate upper surface, and a position away from the substrate upper surface A substrate processing apparatus is provided, comprising a top plate that moves relative to a position where the chemical solution supply nozzle is movable. For example, if the top plate is moved to a position close to the upper surface of the substrate during processing so as to cover a surface that does not need to be processed, it is possible to prevent the chemical solution from being scattered on the surface that does not need to be processed.

  The top plate may be provided with an upper surface supply path for supplying an inert gas. The chemical solution supply nozzle may be held by a shielding plate that prevents the chemical solution supplied to the substrate from the chemical solution supply nozzle from being scattered. Further, the chemical solution supply nozzle may be oriented so as to be inclined in a direction away from the center of the substrate.

  Further, a pure water supply nozzle may be disposed inside the substrate with respect to the chemical solution supply nozzle. In this case, the chemical solution supplied by the chemical solution supply nozzle is supplied into, for example, an area of pure water supplied by the pure water supply nozzle and flowing on the surface of the substrate. The pure water supply nozzle may be controlled to supply pure water at an earlier timing than the chemical liquid supply nozzle.

  Further, a pure water supply nozzle may be disposed inside the substrate with respect to the chemical solution supply nozzle, and an inert gas supply nozzle may be disposed within the substrate with respect to the pure water supply nozzle. In this case, the chemical liquid supplied by the chemical liquid supply nozzle is supplied, for example, in an area of pure water supplied by the pure water supply nozzle and flowing on the surface of the substrate, and supplied by the pure water supply nozzle. Is supplied, for example, in the region of the inert gas supplied by the inert gas supply nozzle and flowing on the surface of the substrate. The pure water supply nozzle is controlled to supply pure water at an earlier timing than the chemical solution supply nozzle, and the inert gas supply nozzle supplies an inert gas at an earlier timing than the pure water supply nozzle. It may be controlled to supply.

  A substrate processing apparatus for processing a substrate by relatively moving a plurality of supply means for supplying different processing fluids along the peripheral portion of the substrate, wherein the plurality of supply means are directed from the periphery to the inside. A substrate processing apparatus is provided, which is arranged side by side in a direction. In this substrate processing apparatus, the processing fluid supplied from the supply means arranged outside is pushed away from the center of the substrate by the processing fluid supplied from the supply means arranged inside. Can do. The plurality of supply means are preferably arranged side by side on a line connecting the center and the periphery of the substrate.

  Of the plurality of supply means, the supply means arranged on the outermost side supplies a chemical solution to the substrate, and the supply means arranged on the innermost side supplies an inert processing fluid to the substrate. Is preferred. The inert processing fluid is, for example, N2 gas. Moreover, the supply means arranged at the innermost side among the plurality of supply means may supply pure water to the substrate. In this case, since the supply means arranged at the innermost side does not process the substrate, the processing liquid supplied to the peripheral portion can be swept away without processing the surface on the center side of the substrate.

  It is preferable that the plurality of supply units are oriented so as to be inclined in a direction away from the center of the substrate. In this case, the processing fluid supplied from the supply means arranged outside can be effectively swept away in the direction away from the center of the substrate by the processing fluid supplied from the supply means arranged inside.

  In the plurality of supply means, it is preferable that the processing fluid supplied by the supply means arranged outside is supplied into the region of the processing fluid supplied by the supply means arranged inside and flowing on the surface of the substrate. . Further, in the plurality of supply means, it is preferable that the supply means arranged on the inner side is controlled so as to supply the processing fluid at an earlier timing than the supply means arranged on the outer side. In this case, the processing fluid supplied from the supply means arranged outside by the processing fluid supplied from the supply means arranged inside causes the processing fluid supplied from the supply means arranged inside to be outside the surface through which the processing fluid supplied by the supply means arranged inside flows. It can be prevented from flowing in.

  It is preferable that the plurality of supply units be configured to be movable along a line connecting the center and the periphery of the substrate. In this case, for example, the width of the processing surface can be changed. Then, it is preferable that the processing of the substrate with the different processing fluid is performed stepwise according to the distance from the periphery of the substrate.

  It is preferable to include a suction unit that sucks the processing fluid supplied to the substrate from the plurality of supply units. Moreover, it is preferable to provide a shielding plate that prevents scattering of the processing fluid supplied to the substrate from the plurality of supply means. In this case, it is preferable to hold the plurality of supply units on the shielding plate.

  Furthermore, an outer chamber surrounding the substrate may be provided, and the plurality of supply means may be movable in and out of the outer chamber. In this case, it is preferable that a supply means storage section for storing the plurality of supply means is provided outside the outer chamber.

  Furthermore, it is preferable to discharge an inert atmosphere between the top plate and the substrate. Moreover, you may form the recessed part which receives the said several supply means in the peripheral part of the said top plate. In this case, for example, if the supply is performed in a state where the plurality of supply means are received in the recesses during the processing, all other surfaces can be covered with the top plate. Furthermore, it is preferable that the top plate is configured to be rotatable.

  Further, a plurality of supply means arranged side by side in the direction from the periphery of the substrate toward the inside are relatively moved along the peripheral portion of the substrate, and different processing fluids are respectively supplied from the plurality of supply means to the peripheral portion of the substrate. When processing the substrate by supplying, the processing fluid supplied from the supply means arranged outside is pushed away from the center of the substrate by the processing fluid supplied from the supply means arranged inside. A substrate processing method is provided.

  Of the plurality of supply means, the supply means arranged on the outermost side supplies a chemical solution to the substrate, and the supply means arranged on the innermost side supplies an inert processing fluid to the substrate. Is preferred. Moreover, the supply means arranged at the innermost side among the plurality of supply means may supply pure water to the substrate.

  In the plurality of supply means, the supply means arranged on the inner side is preferably controlled so as to supply the processing fluid at an earlier timing than the supply means arranged on the outer side.

  Moreover, it is preferable to move the plurality of supply means along a direction in which the plurality of supply means are arranged. In this case, the width of the processing surface can be changed. Further, when moving the plurality of supply means, it is preferable to perform the processing of the substrate with the different processing fluid in a stepwise manner in accordance with the distance from the periphery of the substrate.

According to the substrate processing apparatus of the present invention, for example, if the top plate is moved to a position close to the upper surface of the substrate during the processing so as to cover the surface that does not need to be processed, the chemical solution is applied to the surface that does not need to be processed. It is possible to prevent scattering.
Note that the processing fluid supplied from the supply means arranged on the inside can push away the processing fluid such as a chemical solution supplied from the supply means arranged on the outside in the direction away from the center of the substrate. The peripheral portion can be processed without processing the surface on the center side of the substrate. The width of the processing surface can be changed. It is possible to prevent the processing fluid from splashing on a surface that does not need to be processed.

  Hereinafter, a preferred embodiment of the present invention will be described based on a substrate processing unit as a substrate processing apparatus configured to clean a peripheral portion and a back surface of a wafer as an example of a substrate. The cleaning treatment here includes removal and cleaning of the film stacked on the substrate. FIG. 1 is a plan view of a cleaning processing system 1 incorporating substrate processing units 12 and 13 according to the present embodiment. FIG. 2 is a side view thereof. The cleaning processing system 1 includes a cleaning processing unit 2 that performs a cleaning process on the wafer W and a thermal process after the cleaning process, and a loading / unloading unit 3 that loads the wafer W into and out of the cleaning processing unit 2. .

  The carry-in / out unit 3 includes an in / out port 4 provided with a mounting table 6 on which a plurality of, for example, 25 wafers W, on which containers (carriers C) that can be accommodated substantially horizontally at predetermined intervals, are mounted. The wafer transfer unit 5 is provided with a wafer transfer unit 7 that transfers a wafer between the carrier C mounted on the mounting table 6 and the cleaning processing unit 2.

  The wafer W is carried in and out through one side surface of the carrier C, and a lid body that can be opened and closed is provided on the side surface of the carrier C. Further, the carrier C is provided with shelf boards for holding the wafers W at predetermined intervals on the inner wall, and 25 slots for accommodating the wafers W are formed. One wafer W is accommodated in each slot in a state where the surface (surface on which the semiconductor device is formed) is the upper surface (the surface that is the upper side when the wafer W is held horizontally).

  On the mounting table 6 of the in / out port 4, for example, three carriers C can be placed in a predetermined position in the Y direction on the horizontal plane. The carrier C is placed with the side surface on which the lid is provided facing toward the boundary wall 8 between the in / out port 4 and the wafer transfer unit 5. A window portion 9 is formed in the boundary wall 8 at a position corresponding to the place where the carrier C is placed, and a window portion opening / closing mechanism that opens and closes the window portion 9 by a shutter or the like on the wafer transfer portion 5 side of the window portion 9. 10 is provided.

  The window opening / closing mechanism 10 can also open and close the lid provided on the carrier C, and simultaneously opens and closes the lid of the carrier C. The window opening / closing mechanism 10 is preferably provided with an interlock so that it does not operate when the carrier C is not placed at a predetermined position of the placement table. When the window 9 is opened to allow the wafer loading / unloading port of the carrier C to communicate with the wafer transfer unit 5, it becomes possible to access the carrier C of the wafer transfer device 7 disposed in the wafer transfer unit 5. It is in a state where it can be transported. A wafer detection device (not shown) is provided above the window 9 so that the number and state of the wafers W accommodated in the carrier C can be detected for each slot. Such a wafer detection apparatus can be mounted on the window opening / closing mechanism 10.

  A wafer transfer device 7 disposed in the wafer transfer unit 5 is movable in the Y direction and the Z direction, and is configured to be rotatable in the XY plane (θ direction). Further, the wafer transfer device 7 has an extraction / accommodating arm 11 for gripping the wafer W, and the extraction / accommodating arm 11 is slidable in the X direction. In this way, the wafer transfer device 7 accesses the slots of any height of all the carriers C mounted on the mounting table 6, and the upper and lower two wafer transfer units 16 disposed in the cleaning processing unit 2. , 17, the wafer W can be transferred from the in / out port 4 side to the cleaning processing unit 2 side, and conversely from the cleaning processing unit 2 side to the in / out port 4 side.

  The cleaning processing unit 2 includes a main wafer transfer device 18, two wafer transfer units 16 and 17, two substrate processing units 12 and 13 according to the present embodiment, a substrate cleaning unit 14 and 15, and a wafer Three heating units 19, 20, and 21 for heating and drying W and a cooling unit 22 for cooling the heated wafer W are provided. The main wafer transfer device 18 is disposed so as to be accessible to all of the wafer transfer units 16 and 17, the substrate processing units 12 and 13, the substrate cleaning units 14 and 15, the heating units 19, 20 and 21, and the cooling unit 22. ing. The wafer delivery units 16 and 17 temporarily place the wafer W in order to deliver the wafer W to and from the wafer transfer unit 5.

  The cleaning processing unit 2 includes an electrical unit 23 that is a power source for operating the entire cleaning processing system 1, various devices disposed in the cleaning processing system 1, and a machine that controls the operation of the entire cleaning processing system 1. A control unit 24 and a chemical solution storage unit 25 for storing a predetermined cleaning solution to be fed to the substrate processing units 12 and 13 and the substrate cleaning units 14 and 15 are disposed. The electrical unit 23 is connected to a main power source (not shown). A fan filter unit (FFU) 26 for downflowing clean air is disposed on each unit and the main wafer transfer device 18 on the ceiling portion of the cleaning processing unit 2.

  By installing the electrical unit 23, the chemical storage unit 25, and the machine control unit 24 outside the cleaning processing unit 2 or by pulling them out, the wafer transfer units 16, 17 and the main wafer transfer from this surface (Y direction) Maintenance of the apparatus 18, the heating units 19, 20, 21 and the cooling unit 22 can be easily performed.

  FIG. 3 is a cross-sectional view showing a schematic arrangement of the wafer transfer units 16 and 17 and the main wafer transfer device 18 and the heating units 19, 20 and 21 and the cooling unit 22 adjacent to each other in the X direction of the wafer transfer units 16 and 17. . The wafer transfer units 16 and 17 are arranged to be stacked in two upper and lower stages. For example, the lower wafer transfer unit 17 places a wafer W to be transferred from the in / out port 4 side to the cleaning processing unit 2 side. Therefore, the upper wafer transfer unit 16 can be used to place the wafer W to be transferred from the cleaning processing unit 2 side to the in / out port 4 side.

  A part of the down flow from the fan filter unit (FFU) 26 is structured to flow out toward the wafer transfer unit 5 through the wafer transfer units 16 and 17 and the space above the wafer transfer units 16 and 17. This prevents particles and the like from entering the cleaning processing unit 2 from the wafer transfer unit 5 and maintains the cleanliness of the cleaning processing unit 2.

  The main wafer transfer device 7 includes a cylindrical holder 30 having vertical walls 27 and 28 and a side opening 29 between them disposed in the Z direction, and a Z direction along the cylindrical holder 30 inside thereof. And a wafer carrier 31 provided so as to be movable up and down. The cylindrical holder 30 can be rotated by the rotational driving force of the motor 32, and the wafer carrier 31 is also rotated integrally with the cylindrical holder 30.

  The wafer transfer body 31 includes a transfer base 33 and three transfer arms 34, 35, and 36 that can move back and forth along the transfer base 33. It has a size capable of passing through the side opening 29 of the shape holding body 30. The transport arms 34, 35, and 36 can be moved forward and backward independently by a motor and a belt mechanism built in the transport base 33. The wafer carrier 31 is moved up and down by driving a belt 38 by a motor 37. Reference numeral 39 is a drive pulley, and 40 is a driven pulley.

  On the cooling unit 22 for forcibly cooling the wafer W, three heating units 19, 20, and 21 are stacked and arranged. It is also possible to provide the cooling unit 22 and the heating units 19, 20, 21 in the space above the wafer transfer units 16, 17. In this case, the positions of the cooling unit 22 and the heating units 19, 20, and 21 shown in FIG. 1 can be used as other utility spaces.

  The substrate processing units 12 and 13 are arranged in two upper and lower stages. Further, the substrate processing units 12 and 13 can perform cleaning of the back surface of the wafer W and removal processing and cleaning (Back-Bevel cleaning processing) of the peripheral portion of the front surface of the wafer W, and have the same configuration. Therefore, the structure of the substrate processing unit 12 according to the present embodiment will be described in detail below as an example.

  FIG. 4 is a plan view of the substrate processing unit 12. The unit chamber 42 of the substrate processing unit 12 includes an outer chamber 43 having a sealed structure for storing the wafer W and an edge arm storage portion 44. An opening 45 is formed in the unit chamber 42, and a unit chamber mechanical shutter 46 that opens and closes the opening 45 by an opening / closing mechanism (not shown) is provided. A wafer W is loaded into the substrate processing unit 12 from the opening 45 by a transfer arm. When being taken out, the unit chamber mechanical shutter 46 is opened. The mechanical shutter 46 for the unit chamber opens and closes the opening 45 from the inside of the unit chamber 42. Even when the inside of the unit chamber 42 becomes positive pressure, the atmosphere inside the unit chamber 42 leaks to the outside. Absent.

  An opening 47 is formed in the outer chamber 43, and an outer chamber mechanical shutter 48 that opens and closes the opening 47 by a cylinder drive mechanism (not shown) is provided. For example, the wafer W is opened from the opening 47 to the outer chamber 43 by the transfer arm 34. The outer chamber mechanical shutter 48 is opened when the is carried in and out. The outer chamber mechanical shutter 48 may be opened and closed by an opening / closing mechanism common to the unit chamber mechanical shutter 46. The outer chamber mechanical shutter 48 opens and closes the opening 47 from the inside of the outer chamber 43. Even when the pressure in the outer chamber 43 becomes positive, the atmosphere inside the outer chamber 43 leaks to the outside. Absent.

  The edge arm storage portion 44 is provided with an opening 49, and an edge arm storage portion shutter 50 that opens and closes the opening 49 by a driving mechanism (not shown) is provided. When the edge arm storage portion 44 is isolated from the outer chamber 43 in an atmosphere, the edge arm storage portion shutter 50 is closed. The edge arm shutter 50 opens and closes the opening 49 from the inside of the outer chamber 43, so that the atmosphere inside the unit chamber 42 leaks to the outside even when the inside of the unit chamber 42 becomes positive pressure. Does not appear.

  In the edge arm storage unit 44, an edge arm 60 capable of discharging chemical liquid, pure water, and N2 as an inert gas is stored. The edge arm 60 is housed in the outer chamber 43 and is movable to the peripheral portion of the wafer W held by a spin chuck 71 described later. The edge arm 60 is retracted in the edge arm storage unit 44 except during processing. When the edge arm 60 moves from the opening 49 into the outer chamber 43, the edge arm storage portion shutter 50 is opened.

  As shown in FIG. 5, the edge arm 60 includes a chemical solution supply nozzle 61 that supplies a chemical solution to the wafer W (metal film 141), a pure water supply nozzle 62 that supplies pure water as an inactive liquid, and an inactive state. N2 gas supply nozzle 63 for supplying N2 gas as the gas is provided. The chemical solution supply nozzle 61, the pure water supply nozzle 62, and the N 2 gas supply nozzle 63 are arranged side by side on a line connecting the center and the peripheral portion of the wafer W. That is, in the illustrated example, the wafers W having a circular shape are arranged side by side in the radial direction. A metal film 141 such as copper is laminated on the surface of the wafer W, and the chemical solution supply nozzle 61 supplies a chemical solution for removing the metal film 141. A pure water supply nozzle 62 disposed adjacent to the chemical liquid supply nozzle 61 and inside the chemical liquid supply nozzle 61 supplies pure water for rinsing the peripheral portion. An N 2 gas supply nozzle 63 disposed adjacent to the pure water supply nozzle 62 and inside the pure water supply nozzle 62 supplies N 2 gas for performing a drying process on the peripheral portion.

  The chemical solution supply nozzle 61, the pure water supply nozzle 62, and the N2 gas supply nozzle 63 are held by the shielding plate 64, and are supplied to the wafer W from the chemical solution supply nozzle 61, the pure water supply nozzle 62, and the N2 gas supply nozzle 63. The shielding plate 64 prevents the chemical liquid, pure water, and N2 gas from scattering. The chemical solution supply nozzle 61, the pure water supply nozzle 62, and the N 2 gas supply nozzle 63 are inclined and directed in a direction away from the center of the wafer W. That is, the tips of the chemical solution supply nozzle 61, the pure water supply nozzle 62, and the N 2 gas supply nozzle 63 are directed toward the outer periphery of the wafer W. Further, a suction nozzle 65 is provided on the outer peripheral side of the wafer W with respect to the chemical solution supply nozzle 61, and the chemical solution, pure water supplied to the wafer W from the chemical solution supply nozzle 61, the pure water supply nozzle 62, and the N 2 gas supply nozzle 63, N2 gas and the atmosphere generated during processing are sucked.

  When the chemical solution supply nozzle 61 supplies the chemical solution to the wafer W, the N2 gas supply nozzle 63 starts supplying N2 gas before starting the supply of the chemical solution. In this case, the N 2 gas supply nozzle 63 supplies N 2 gas to the position of the region 68 as shown in FIG. The N 2 gas supplied to the region 68 flows in a fan shape toward the outer periphery along the surface of the wafer W (the surface of the metal film 141), and flows in the shape of the region 68 '. On the other hand, the chemical solution supply nozzle 61 supplies the chemical solution to the position of the region 66, and the chemical solution supplied to the region 66 flows in the outer peripheral direction along the surface of the wafer W and flows into the fan-shaped region 66 ′. These regions 66 and 66 ′ are both within the region 68 ′, and the N2 gas supply nozzle 63 starts supplying N2 gas before the supply of the chemical solution by the chemical solution supply nozzle 61 is started as described above. By doing so, the chemical solution is surely supplied to the region 66 and is pushed away in the outer peripheral direction of the wafer W by the N 2 gas flowing in the shape of the region 68 ′. In this way, there is no concern that the chemical liquid supplied from the chemical liquid supply nozzle 61 flows to the center side of the wafer W. When pure water is supplied to the wafer W by the pure water supply nozzle 62, the N2 gas supply nozzle 63 starts to supply N2 gas before starting the supply of pure water. In this case, the N 2 gas supply nozzle 63 supplies N 2 gas to the position of the region 68 as shown in FIG. The N2 gas supplied to the region 68 flows in a fan shape along the surface of the wafer W toward the outer periphery, and flows in the shape of the region 68 '. On the other hand, the pure water supply nozzle 62 supplies pure water to the position of the region 67, and the pure water supplied to the region 67 flows toward the outer periphery along the surface of the wafer W and flows into the fan-shaped region 67 ′. . These regions 67 and 67 ′ are both within the region 68 ′, and before the supply of pure water by the pure water supply nozzle 62 is started as described above, the N2 gas supply nozzle 63 supplies the N2 gas. As a result, the pure water is surely supplied to the region 67 and is swept away in the outer peripheral direction of the wafer W by the N 2 gas flowing in the shape of the region 68 ′. In this way, there is no concern that the pure water supplied from the pure water supply nozzle 62 flows to the center side of the wafer W. Note that the region 68 to which the N2 gas is supplied preferably has a larger area than the regions 66 and 67 in order to surely push the chemical solution and pure water by the N2 gas flowing in the shape of the region 68 ′. That is, as shown in FIG. 6, the width of the region 68 ′ in the circumferential direction of the wafer W can be supplied so as to be surely wider than the regions 66 ′ and 67 ′.

  As shown in FIG. 7, in the outer chamber 43, an inner cup 70 for storing the wafer W, and a holding means for rotatably holding the wafer W in the inner cup 70 with the surface of the wafer W as an upper surface, for example. And a top plate 72 that moves up and down relatively with respect to the upper surface of the wafer W (wafer W surface) held by the spin chuck 71.

  The spin chuck 71 includes a chuck body 73 that holds the wafer W and a rotating cylinder 74 that is connected to the bottom of the chuck body 73. An under plate 75 that moves up and down relative to the lower surface of the wafer W (back surface of the wafer W) held by the spin chuck 71 is disposed in the chuck body 73.

  On the upper portion of the chuck body 73, support pins (not shown) for supporting the peripheral edge of the back surface of the wafer W and holding members 63 for holding the wafer W from the peripheral edge are mounted at a plurality of locations. In the illustrated example, holding members 80 are arranged at three locations around the chuck main body 73 so that the central angle is 120 °, and the three holding members 80 can hold the wafer W from the periphery. It has become. Although not shown, three support pins are provided on the chuck body 73 so that the peripheral edge of the wafer W can be similarly supported from the lower surface side at a position where the central angle is 120 °. A belt 77 is wound around the outer peripheral surface of the rotating cylinder 74, and the entire spin chuck 71 is rotated by rotating the belt 77 by a motor 78. Each holding member 80 is configured to hold the peripheral edge portion of the wafer W from the outside as shown in FIG. 4 using a centrifugal force when the spin chuck 71 rotates. When the spin chuck 71 is stationary, the back surface of the wafer W is supported by the support pins, and when the spin chuck 71 is rotating, the peripheral portion of the wafer W is held by the holding member 80.

  Each of the three holding members 76 that hold the wafer W has a configuration shown in FIG. The holding member 76 includes a grip arm 80, a presser arm 81, and a spring 82. The grip arm 80 and the presser arm 81 are both rotatable about the shaft 83, and a spring 82 is interposed between the grip arm 80 and the presser arm 81. The shaft 83 is fixed to the chuck body 73. A weight 84 is provided below the presser arm 81. When the spin chuck 71 rotates, as shown in FIG. 9, centrifugal force acts on the weight 84 to move outward, and the upper portion of the gripping arm 80 moves inward, so that the wafer W can be held from around. . At this time, since the spring 82 absorbs the generated energy, the force (holding force) for pressing the wafer W from the peripheral edge can be prevented from becoming excessively large. When the spin chuck 71 rotates at a high speed, the weight 84 abuts against the stopper 85 in the chuck body 73 and absorbs the energy generated by the spring 82, as shown in FIG. Can be prevented.

  The under plate 75 is connected to an under plate shaft 90 that is inserted through the chuck body 73 and the rotating cylinder 74. The under plate shaft 90 is fixed to the upper surface of the horizontal plate 91, and the horizontal plate 91 is moved up and down in the vertical direction integrally with the under plate shaft 90 by an elevating mechanism 92 formed of an air cylinder or the like. Therefore, as shown in FIG. 7, the under plate 75 descends downward in the chuck main body 73 and is in a standby state away from the lower surface of the wafer W held by the spin chuck 71 (retracted position). As shown in FIG. 4, the chuck body 73 moves upward and can move up and down to a state (processing position) where the lower surface of the wafer W held by the spin chuck 71 is subjected to a cleaning process. While the under plate 75 is fixed at a predetermined height, an elevator mechanism (not shown) is connected to the rotating cylinder 74 and the entire spin chuck 71 is moved up and down in the vertical direction, whereby the under plate 75 is retracted from the processing position. The position may be freely movable up and down.

  The top plate 72 is connected to the lower end of the top plate rotating shaft 95 and is rotated by a rotating shaft motor 97 installed on the horizontal plate 96. The top plate rotating shaft 95 is rotatably held on the lower surface of the horizontal plate 96, and the horizontal plate 96 is moved up and down in the vertical direction by a rotating shaft lifting mechanism 98 composed of an air cylinder or the like fixed to the upper portion of the outer chamber. Therefore, as shown in FIG. 7, the top plate 72 is in a standby state (retracted position) away from the upper surface of the wafer W held by the spin chuck 71 as shown in FIG. Thus, it can move up and down to a state (processing position) close to the upper surface of the wafer W held by the spin chuck 71. As shown in FIG. 4, the diameter of the top plate 72 is smaller than the diameter of the wafer W, so that the edge arm 60 can process the peripheral portion of the wafer W.

  The inner cup 70 is lowered to the position shown in FIG. 7, and the spin chuck 71 protrudes above the upper end of the inner cup 70 to transfer the wafer W, and the inner cup 70 is raised to the position shown in FIG. It surrounds the chuck 71 and the wafer W, and is movable up and down to a state in which cleaning chemicals and processing fluid supplied to both surfaces of the wafer W are prevented from scattering around.

  When the inner cup 70 is lowered to the position shown in FIG. 7 and the wafer W is transferred to the spin chuck 71, the under plate 75 is positioned at the retracted position and the top plate 72 is positioned at the retracted position. Then, a sufficient gap is formed between the under plate 75 and the position of the wafer W held by the spin chuck 71. A sufficient gap is also formed between the position of the top plate 72 and the upper surface of the wafer W. In this way, the transfer of the wafer W to the spin chuck 71 is smoothly performed.

  As shown in FIG. 11, the under plate 75 is provided with a lower surface supply path 100 for supplying a treatment liquid such as cleaning chemical liquid or pure water and a dry gas, for example, through the under plate shaft 90. As shown in FIG. 12, lower surface discharge ports 101 to 105 for discharging the cleaning chemical solution / pure water / N 2 are provided at the center and four peripheral portions of the under plate 75. The peripheral lower surface discharge ports 101 to 104 are inclined toward the periphery of the wafer W, and the central lower surface discharge port 105 is directed upward toward the center of the wafer W.

  As shown in FIG. 13, the top plate 72 is provided with an upper surface supply path 106 for supplying, for example, N 2 gas, penetrating through the top plate rotation shaft 95. Above the outer chamber 43, an N2 gas supply means 107 for discharging N2 gas is provided between the upper surface of the top plate 72 and the inside of the outer chamber.

  As shown in FIG. 14, an inner cup discharge pipe 110 that discharges droplets in the inner cup 70 is connected to the bottom of the inner cup 70. The inner cup discharge pipe 110 is movable up and down in the through-hole 111 provided at the bottom of the outer chamber 43. The lower end of the inner cup discharge pipe 110 is inserted into the inner cup mist trap 112. The inner cup mist trap 112 removes bubbles from the liquid drained from the inner cup 70. The removed bubbles are exhausted to the outside through an inner cup mist trap exhaust pipe 113 connected to the inner cup mist trap 112. The droplets from which the bubbles have been removed are collected by the inner cup drain collection line 114 connected to the inner cup mist trap 112.

  An outer chamber discharge pipe 115 that drains liquid droplets in the outer chamber 43 is connected to the bottom of the outer chamber 43. The outer chamber discharge pipe 115 is provided with an outer chamber mist trap 116 for removing bubbles and the like from liquid droplets discharged by the outer chamber mist trap 116. The removed bubbles are exhausted to the outside by an outer chamber mist trap exhaust pipe 117 connected to the outer chamber mist trap 116. The droplets from which the bubbles have been removed are collected by an outer chamber drainage collection line 118 connected to the outer chamber mist trap 116.

  When the inner cup 70 is lowered, as shown in FIG. 15, the spin chuck 71 and the wafer W held thereon are projected upward from the upper end of the inner cup 70. In this case, the droplet in the outer chamber 43 descends outside the inner cup 70 and is drained by the outer chamber discharge pipe 115. On the other hand, as shown in FIG. 14, when the inner cup 70 is raised, the inner cup 70 surrounds the spin chuck 71 and the wafer W, and the cleaning liquid or the like supplied to both surfaces of the wafer W is prevented from being scattered around. . In this case, the upper part of the inner cup 70 is close to the inner wall of the outer chamber 43, and the liquid droplets in the inner cup 70 are drained by the inner cup discharge pipe 110.

  The substrate processing unit 13 provided in the cleaning processing system 1 has the same configuration as that of the substrate processing unit 12, and cleans the back surface of the wafer W, removes the peripheral portion of the front surface of the wafer W, and cleans the peripheral portion (Back). -Bevel washing process).

  The substrate cleaning units 14 and 15 provided in the cleaning processing system 1 are configured to clean both surfaces of the wafer W with various cleaning liquids and perform a drying process.

  In this cleaning processing system 1, first, a carrier C storing, for example, 25 wafers W each not yet cleaned by a transfer robot (not shown) is placed on the in / out port 4. Then, the wafers W are taken out one by one from the carrier C placed on the in / out port 4 by the take-out / storage arm 11, and the wafers W are transferred from the take-out / storage arm 3 to the main wafer transfer device 7. Then, the wafer W is appropriately carried into the substrate processing unit 12 or 13 by the transfer arm 34, and the rear surface of the wafer W, the peripheral portion removal processing on the front surface of the wafer W, and the peripheral portion are cleaned. Further, contaminants such as particles that are appropriately carried into the substrate cleaning unit 14 or 15 and adhered to the wafer W are cleaned and removed. The wafer W which has been subjected to the predetermined cleaning process is again unloaded from the substrate processing units 12 and 13 or the substrate cleaning units 14 and 15 by the main wafer transfer device 7 again, transferred to the take-out storage arm 11 and again transferred to the carrier C. It is stored in.

  Here, the processing in the substrate processing unit 12 will be described as a representative of the substrate processing units 12 and 13. As shown in FIG. 7, first, the unit chamber mechanical shutter 46 of the substrate processing unit 12 is opened, and the outer chamber mechanical shutter 47 of the outer chamber 43 is opened. Then, for example, the transfer arm 34 holding the wafer W is moved into the apparatus. The inner cup 70 is lowered to cause the chuck body 73 to relatively protrude upward. The under plate 75 is lowered in advance and is located at a retracted position in the chuck body 73. The top plate 72 is raised in advance and located at the retracted position. Further, the edge arm storage portion shutter 50 is closed.

  The main wafer transfer device 18 lowers the transfer arm 34 and transfers the wafer W to the holding member 76, and the spin chuck 71 supports the wafer W with a support pin (not shown) with the surface of the wafer W on which the semiconductor device is formed as the upper surface. To do. In this case, since the under plate 75 is positioned at the retracted position and sufficiently separated from the position (height) of the wafer W held by the spin chuck 71, the transfer arm 34 passes the wafer W to the spin chuck 71 with a margin. Can do. After the wafer W is transferred to the spin chuck 71, the transfer arm 34 moves out of the outer chamber 43 and the unit chamber mechanical shutter 46, and after leaving, the unit chamber mechanical shutter 46 and the outer chamber 43 of the substrate processing unit 12 are moved. The outer chamber mechanical shutter 47 is closed.

  The inner cup 70 is raised, and the chuck body 73 and the wafer W are surrounded. The under plate 75 rises to the processing position in the chuck body 73. As shown in FIG. 17, a gap L1 of, for example, about 0.5 to 3 mm is formed between the under plate 75 moved to the processing position and the lower surface of the wafer W (back surface of the wafer W) held by the spin chuck 71. .

  Next, a cleaning process for the back surface of the wafer W is performed. On the under plate 75, for example, the cleaning chemical solution is gently exuded from the lower surface supply path 100 and supplied to the gap L <b> 1. In the narrow gap L1, the cleaning chemical is spread over the entire lower surface of the wafer W to form a liquid film of the cleaning chemical that uniformly contacts the entire lower surface of the wafer W. When the cleaning chemical liquid film is formed over the entire gap L1, the supply of the cleaning chemical liquid is stopped and the lower surface of the wafer W is cleaned. When the cleaning chemical liquid is deposited in the gap L1 to form a liquid film, it is possible to prevent the liquid film of the cleaning chemical liquid from being deformed by surface tension. For example, if the shape of the cleaning chemical liquid film collapses, a non-contact portion of the cleaning chemical liquid film occurs on the lower surface of the wafer W, or bubbles are mixed in the liquid film, resulting in poor cleaning. However, by depositing the cleaning chemical liquid in the narrow gap L1 between the under plate 75 and the lower surface of the wafer W in this way, it is possible to maintain the shape of the cleaning chemical liquid film and prevent poor cleaning.

  In this case, the spin chuck 71 rotates the wafer W at a relatively low rotational speed (for example, about 10 to 30 rpm) such that the shape of the liquid film of the cleaning chemical solution is not broken. As the wafer W rotates, a liquid flow is generated in the liquid film of the cleaning chemical liquid. This liquid flow prevents stagnation in the liquid film of the cleaning chemical liquid and improves the cleaning efficiency. Further, the wafer W may be rotated intermittently. For example, after rotating the wafer W for a predetermined time or a predetermined number of rotations, the rotation operation of the spin chuck 71 is stopped for a predetermined time, the wafer W is stopped, and then the wafer W is rotated again. If the rotation and stop of the wafer W are repeated in this way, the cleaning chemical can be easily diffused over the entire lower surface of the wafer W. Of course, it is also possible to perform the cleaning process while keeping the wafer W stationary without rotating it at all. Further, it is not necessary to supply a new cleaning chemical after the liquid film is formed. This is because the entire lower surface of the wafer W can be cleaned with the cleaning chemical already supplied between the under plate 75 and the lower surface of the wafer W as long as the shape of the liquid film of the cleaning chemical does not collapse. On the other hand, when the shape of the liquid film of the cleaning chemical liquid is about to collapse, a new liquid is supplied to appropriately repair the shape of the liquid film of the cleaning chemical liquid. In this way, consumption of cleaning chemicals is saved. In addition, while the droplet of the liquid film of the cleaning chemical liquid is dropped from the peripheral edge of the under plate 75 by the rotation of the wafer W, the cleaning chemical liquid is continuously supplied through the lower surface supply path 100, thereby allowing the inside of the liquid film of the cleaning chemical liquid to flow. It is also possible to always carry out a suitable cleaning chemical treatment by replacing with a brand new cleaning chemical. In this case as well, it is preferable to supply the new solution as gently as possible to save the cleaning chemical.

  On the other hand, when forming the liquid film by depositing the cleaning chemical liquid in the gap L1, the cleaning chemical liquid is circulated from the periphery of the back surface of the wafer W to the surface of the wafer W (the surface of the metal film 141) to be described later. The cleaning chemical is supplied to the peripheral portion of the surface of the wafer W where the portion removal is performed. Then, simultaneously with the cleaning process on the back surface of the wafer W, the peripheral part cleaning process on the front surface of the wafer W is performed.

  Thereafter, the spin chuck 71 rotates, for example, at 2000 rpm for 5 seconds. That is, the cleaning chemical liquid accumulated on the wafer W is shaken off and discharged to the inner cup discharge pipe 110. When the spin chuck 71 rotates at a high speed, the three holding members 76 provided on the chuck main body 73 are in the state shown in FIG. That is, the lower part of the presser arm 81 contacts the inside of the chuck body 73. Accordingly, during high-speed rotation, the gripping force received by the wafer W is generated by the spring 82, so that an excessive holding force is not applied to the wafer W.

  Next, N 2 gas is supplied between the under plate 75 and the lower surface of the wafer W from the lower surface supply path 100 for 10 seconds, for example, and the cleaning chemical liquid atmosphere below the wafer W is discharged. By supplying the N 2 gas, the droplets of the cleaning chemical liquid can be removed from the back surface of the wafer W.

  Next, the top plate 72 moves to a position close to the upper surface of the wafer W. The edge arm storage unit shutter 50 is opened, and the edge arm 60 is moved above the periphery of the wafer W held by the spin chuck 71. When the edge arm 60 moves to a predetermined position, the N 2 gas supply nozzle 63 provided in the edge arm 60 starts supplying N 2 gas, and then the chemical liquid supply nozzle 61 starts supplying chemical liquid. Then, peripheral portion removal processing is performed in which the corners of the metal film 141 laminated on the surface of the wafer W are removed with a chemical solution.

  During the peripheral portion removal process, the spin chuck 71 rotates at a rotation speed of about 300 rpm, for example. In this case, as described above, since the three holding members 76 are in the state shown in FIG. 9, an appropriate holding force for the wafer W is generated, and the spin chuck 71 can rotate the wafer W. .

  Since the tip of the chemical solution supply nozzle 61 is directed toward the outer periphery of the wafer W, the chemical solution flows smoothly out of the wafer W. Further, the chemical solution supplied by the chemical solution supply nozzle 61 is pushed away toward the outer periphery of the wafer W by the N2 gas supplied by the N2 gas supply nozzle 63. Since the tip of the N 2 gas supply nozzle 63 is directed toward the outer periphery of the wafer W, the chemical liquid can be effectively pushed out of the wafer W by the N 2 gas supplied from the N 2 gas supply nozzle 63. On the surface of the wafer W (surface of the metal film 141), both the region 66 to which the chemical solution is supplied and the flowing region 66 ′ are within the region 68 ′, and the supply of the chemical solution by the chemical solution supply nozzle 61 is started. Since the N2 gas supply nozzle 63 starts supplying the N2 gas before the start of the cleaning, there is no concern that the chemical liquid supplied from the chemical liquid supply nozzle 61 flows to the center side of the wafer W. On the other hand, the pushed chemical solution, N 2 gas, and the chemical solution atmosphere generated during the processing are sucked and discharged by the suction nozzle 65 at the periphery of the wafer W. Further, the shielding plate 64 holding the chemical solution supply nozzle 61 and the N2 gas supply nozzle 63 prevents the chemical solution from splashing on the inner surface of the wafer W. Moreover, the chemical liquid swept away by the N2 gas can be easily reused by collecting it and performing an appropriate treatment.

  During the peripheral portion removal process, the top plate 72 descends to the position (processing position) shown in FIG. 17 and supplies N 2 gas from the upper surface supply path 106. The N 2 gas supplied by the upper surface supply path 106 prevents the chemical solution supplied by the chemical solution supply nozzle 61 and the chemical solution atmosphere generated during the peripheral portion removal process from flowing into the central surface of the wafer W. Thus, the N2 gas supplied from the N2 gas supply nozzle 63 prevents the chemical liquid from flowing outside the surface to which the N2 gas is supplied and the flowing surface, and the chemical liquid is further supplied by the N2 gas supplied from the upper surface supply path 106. Since it prevents flowing into the center side surface of the wafer W, it is possible to effectively prevent the chemical solution from flowing into the inner surface of the wafer W. Further, supplying N 2 gas from the upper surface supply path 106 has an effect of preventing the generation of watermarks on the surface of the wafer W.

  Further, during the peripheral portion removal process, N2 gas is supplied to the upper portion of the top plate 72 from the N2 gas supply means 107 provided at the upper portion of the outer chamber 43 to form a down flow. Since the space between the top surface of the top plate 72 and the outer chamber 43 is filled with N 2 gas, the chemical liquid atmosphere that evaporates from the liquid film of the chemical liquid and rises from the periphery of the top plate 72 does not enter the space above the top plate 72. . Therefore, it is possible to prevent the chemical liquid from remaining in the upper portion of the outer chamber 43 after the peripheral portion removing process.

  When the peripheral portion removal process is completed, the chemical solution supply nozzle 61 stops supplying the chemical solution. The N2 gas supply nozzle 63 continues to supply N2 gas, and then the pure water supply nozzle 62 starts supplying pure water. Then, pure water is supplied to the peripheral portion of the wafer W to perform peripheral portion rinsing processing. Since the tip of the pure water supply nozzle 62 faces the outer periphery of the wafer W, the pure water smoothly flows out of the wafer W. The pure water supplied by the pure water supply nozzle 62 is pushed away toward the outer periphery of the wafer W by the N 2 gas supplied by the N 2 gas supply nozzle 63. Since the tip of the N 2 gas supply nozzle 63 is directed toward the outer periphery of the wafer W, pure water can be effectively pushed out of the wafer W by the N 2 gas supplied by the N 2 gas supply nozzle 63. On the surface of the wafer W (the surface of the metal film 141), the region 66 to which pure water is supplied and the region 66 ′ that flows are both within the region 68 ′, and pure water is supplied by the pure water supply nozzle 62. Since the N2 gas supply nozzle 63 starts supplying the N2 gas before the start of the process, there is no concern that the pure water supplied from the pure water supply nozzle 62 flows to the center side of the wafer W. Further, the pure water that has been swept away, the N 2 gas, and the water vapor atmosphere generated during the processing are sucked and discharged by the suction nozzle 65 at the periphery of the wafer W. Further, the shielding plate 64 holding the pure water supply nozzle 62 and the N2 gas supply nozzle 63 prevents the pure water from scattering on the inner surface of the wafer W. On the other hand, pure water is supplied from the lower surface supply path 100 between the under plate 75 and the lower surface of the wafer W to perform the back surface rinsing process. Thus, the peripheral portion and the back surface of the wafer W are rinsed, and the chemical solution is washed away from the wafer W.

  Even during the rinsing process, the top plate 72 descends to the processing position and supplies N 2 gas from the upper surface supply path 106. The N 2 gas supplied from the upper surface supply path 106 prevents the pure water supplied from the pure water supply nozzle 62 and the water vapor atmosphere generated during the peripheral rinse process from flowing into the center side surface of the wafer W. Thus, the N2 gas supplied from the N2 gas supply nozzle 63 prevents pure water from flowing outside the surface to which the N2 gas is supplied and the flowing surface. Since water is prevented from flowing into the central surface of the wafer W, pure water can be effectively prevented from flowing into the inner surface of the wafer W. Further, supplying N 2 gas from the upper surface supply path 106 has an effect of preventing the generation of watermarks on the surface of the wafer W.

  When the rinsing process is completed, the supply of pure water through the pure water supply nozzle 62 and the lower surface supply path 100 is stopped. The N2 gas supply nozzle 63 continues to supply N2 gas to the peripheral portion of the wafer W and performs peripheral portion drying processing. Since the tip of the N 2 gas supply nozzle 63 is directed toward the outer periphery of the wafer W, the N 2 gas easily flows to the outside of the wafer W. Further, the N2 gas is sucked and discharged by the suction nozzle 65. On the other hand, N2 gas is supplied from the lower surface supply path 100 between the under plate 75 and the lower surface of the wafer W to perform the back surface drying process. Thus, the peripheral portion and the back surface of the wafer W are dried. When the peripheral portion drying process and the back surface drying process are completed, the supply of N2 gas by the N2 gas supply nozzle 63 and the lower surface supply path 100 is stopped, and the top plate 72 is raised to a position away from the upper surface of the wafer W. Next, the wafer W is spin-dried by rotating at a higher speed (for example, about 1500 rpm) than when the wafer W is dried.

  After the drying process, the edge arm 60 moves into the edge arm storage portion 44, and the edge arm storage portion shutter 50 is closed. Next, the wafer W is unloaded from the substrate processing unit 12. The unit chamber mechanical shutter 46 of the substrate processing unit 12 is opened, and the outer chamber mechanical shutter 47 of the outer chamber 43 is opened. Then, the wafer transfer apparatus 18 moves the transfer arm 34 into the apparatus and holds the lower surface of the wafer W. Next, the transfer arm 34 receives the wafer W away from the support pins of the spin chuck 71 and leaves the apparatus. In this case, since the under plate 75 is located at the retracted position, a sufficient gap is formed between the under plate 75 and the position of the wafer W held by the spin chuck 71 as in the case of carrying in. As a result, the transfer arm 34 can receive the wafer W from the spin chuck 71 with a margin.

  According to the substrate processing apparatus 12, the chemical solution can be effectively swept out of the wafer W during the peripheral portion removing process. Further, the chemical solution, pure water, chemical solution atmosphere, and water vapor atmosphere are prevented from flowing into the central surface of the wafer W. Pure water can be effectively swept away from the wafer W during the peripheral rinse process. Furthermore, the surface supplied with pure water can be dried. Even if the spin chuck 71 rotates at a high speed, an excessive holding force is not applied to the wafer W.

  As mentioned above, although an example of the suitable embodiment of the present invention was shown, the present invention is not limited to the form explained here. For example, as shown in FIG. 18, the FFU 122 may be provided on the upper part of the unit chamber 42, and the exhaust mechanism 123 may be provided on the lower part. In this case, even if the processing liquid atmosphere in the outer chamber 43 leaks, it is discharged from the unit chamber 42 by the downflow and exhaust mechanism formed by the FFU 122. Accordingly, when the processed wafer W is unloaded, there is little concern that the wafer W will be contaminated by the processing liquid atmosphere, and there is little concern that the processing liquid atmosphere will leak out of the unit chamber 42.

  For example, as shown in FIG. 19, a recess 125 may be formed in the top plate 72. In this case, if the peripheral part removal process, the peripheral part rinse process, and the peripheral part drying process are performed in a state where the edge arm 60 is received in the recessed part during the process, the surface other than the surface that is supplying the chemical solution or the pure water is used. All surfaces can be covered by the top plate 72. Therefore, even if the chemical solution or pure water is scattered, it is possible to prevent the scattered droplets from adhering to a surface other than the surface where the chemical solution or pure water is being supplied.

  During the peripheral portion removal process, N2 gas may not be supplied from the N2 gas supply nozzle 63 and pure water may be supplied from the pure water supply nozzle 62 as an inert processing fluid. In this case, for example, the pure water supplied to the region 67 shown in FIG. 6 flows in a fan shape toward the outer peripheral direction along the surface of the wafer W (the surface of the metal film 141), and flows in the shape of the region 67 '. On the surface of the wafer W (surface of the metal film 141), both the region 66 to which the chemical solution is supplied and the flowing region 66 ′ are within the region 67 ′, and supply of the chemical solution by the chemical solution supply nozzle 61 is started. Since the pure water supply nozzle 62 starts supplying pure water before the cleaning, the chemical liquid supplied from the chemical liquid supply nozzle 61 does not have to worry about flowing toward the center of the wafer W. Furthermore, it is possible to effectively prevent the chemical solution and pure water from flowing into the inner surface of the wafer W by the N 2 gas supplied from the upper surface supply path 106 of the top plate 72 lowered to the processing position. Note that the region 67 to which pure water is supplied preferably has a larger area than the region 66 in order to surely push the chemical solution with the pure water flowing in the shape of the region 67 ′. That is, as shown in FIG. 6, the width of the region 67 ′ in the circumferential direction of the wafer W is supplied so as to be surely wider than the region 66 ′. Further, during the peripheral portion rinsing process, pure water may be supplied as a processing fluid from the pure water supply nozzle 62 without supplying the N2 gas from the N2 gas supply nozzle 63. Also in this case, pure water can be prevented from flowing into the inner surface of the wafer W by the N 2 gas supplied by the upper surface supply path 106 of the top plate 72 that has been lowered to the processing position. Further, during the peripheral portion removal process, N2 gas may not be supplied from the upper surface supply path 106 of the top plate 72, but N2 gas may be supplied from the N2 gas supply nozzle 63 or pure water may be supplied from the pure water supply nozzle 62. . In this case, the chemical liquid flows into the inner surface of the wafer W by pushing it away while controlling the flow of the chemical liquid with N2 gas supplied from the N2 gas supply nozzle 63 or pure water supplied from the pure water supply nozzle 62. Can be prevented. Also, during the peripheral portion rinsing process, N2 gas is not supplied from the upper surface supply path 106 of the top plate 72, N2 gas is supplied from the N2 gas supply nozzle 63, and pure water is supplied from the pure water supply nozzle 62. Also good. Also in this case, the pure water can be prevented from flowing to the inner surface of the wafer W by being pushed away while controlling the flow of the pure water by the N2 gas supplied from the N2 gas supply nozzle 63.

  The edge arm 60 may not include the N2 gas supply nozzle 63 but may include the chemical solution supply nozzle 61 and the pure water supply nozzle 62. Even in this case, it is possible to prevent the chemical liquid supplied from the chemical liquid supply nozzle 61 from flowing toward the center of the wafer W during the peripheral portion removal process. The pure water can be prevented from flowing into the inner surface of the wafer W by the N 2 gas supplied from the upper surface supply path 106 of the top plate 72 during the peripheral portion rinsing process. The edge arm 60 may not include the pure water supply nozzle 62 but may include the chemical solution supply nozzle 61 and the N 2 gas supply nozzle 63.

  The edge arm 60 may be configured to be movable in the radial direction of the wafer W. That is, the edge arm 60 may be moved while maintaining the relationship between the regions through which the respective processing fluids flow as shown in FIG. In this case, for example, the width of the processing surface in the peripheral portion can be changed. Further, the processing of the wafer W with the chemical solution can be performed in stages according to the distance from the outer periphery of the wafer W. Therefore, for example, as shown in FIG. 20, the metal film 141 can be removed so that the outer peripheral side of the wafer W becomes thinner. At this time, since the chemical liquid is prevented from flowing into the wafer W by the N2 gas or pure water, the edge arm 60 can be moved from the inner side toward the outer periphery. When the corners of the metal film 141 are stepped in this way, the metal film 141 is further difficult to peel from the wafer W. Further, for example, when films on the device structure are laminated in multiple layers like films 141a, 141b, and 141c shown in FIG. 20, the removal width from the outer periphery of the wafer W becomes narrower as the lower laminated film. It is desirable to remove the metal film 141 so that the outer peripheral side of the wafer W becomes thinner.

  The present invention is not limited to the substrate processing apparatus to which the cleaning liquid is supplied, and other various processing liquids or the like may be used to perform processing other than peripheral portion removal and cleaning on the substrate. Further, the substrate is not limited to a semiconductor wafer, but may be another glass for an LCD substrate, a CD substrate, a printed substrate, a ceramic substrate, or the like.

It is a top view of a washing processing system. It is a side view of a washing processing system. It is sectional drawing which shows schematic arrangement | positioning of the wafer delivery unit of a cleaning processing system, a main wafer conveyance apparatus, a heating unit, and a cooling unit. It is a top view of the substrate processing unit concerning an embodiment of the invention. It is explanatory drawing of an edge arm. It is explanatory drawing of the surface on the wafer W to which each process fluid supplied from the chemical | medical solution supply nozzle 61, the pure water supply nozzle 62, and the N2 gas supply nozzle 63 is supplied, and the surface through which the supplied process fluid flows. It is sectional drawing of the processing system concerning embodiment of this invention. It is explanatory drawing of the state of the holding member at the time of stillness. It is explanatory drawing of the state of the holding member at the time of medium speed rotation. It is explanatory drawing of the state of the holding member at the time of high speed rotation. It is a longitudinal cross-sectional view of an underplate and an underplate shaft. It is a top view of an underplate. It is the longitudinal cross-sectional view which expanded and showed the upper part of the outer chamber. It is explanatory drawing of the process of discharging the droplet in an inner cup to a mist trap. It is explanatory drawing of the process of discharging the droplet in an outer chamber to a mist trap. It is explanatory drawing of the process of carrying out the paddle cleaning of the wafer W back surface. It is explanatory drawing of the process of a peripheral part removal process of the wafer W peripheral part. It is explanatory drawing which shows the modification of a top plate. It is explanatory drawing at the time of providing FFU and an exhaust mechanism in the substrate processing unit concerning embodiment of this invention. It is explanatory drawing of the process of carrying out the peripheral part removal process of the wafer W in another embodiment. It is explanatory drawing of the process of carrying out the peripheral part removal process of the wafer W periphery in the conventional substrate processing apparatus.

Explanation of symbols

C carrier W wafer 1 cleaning processing system 2 cleaning processing unit 3 carry-in / out unit 4 in / out port 5 wafer transfer unit 7 wafer transfer unit 12, 13 substrate processing unit 14, 15 substrate cleaning unit 18 main wafer transfer unit 34, 35, 36 Transfer Arm 42 Unit Chamber 43 Outer Chamber 44 Edge Arm Storage 49 Open 50 Edge Arm Storage Shutter 60 Edge Arm 61 Chemical Supply Nozzle 62 Pure Water Supply Nozzle 63 N2 Gas Supply Nozzle 64 Shielding Plate 65 Suction Nozzle 70 Inner Cup 71 Spin chuck 72 Top plate 73 Chuck body 74 Rotating cylinder 75 Under plate 76 Holding member 80 Holding arm 81 Presser arm 82 Spring 83 Shaft 84 Weight 100 Lower surface supply path 106 Upper surface supply path 107 N Gas supply means 125 concave portion 140 feeder 141 metal film 142 feeder

Claims (10)

A substrate processing apparatus for processing a substrate,
A chemical supply nozzle for supplying a chemical to the periphery of the substrate;
A top plate that moves relatively between a position close to the substrate upper surface and a position away from the substrate upper surface;
A substrate processing apparatus, wherein the chemical solution supply nozzle is configured to be movable.   The substrate processing apparatus according to claim 1, wherein the top plate is provided with an upper surface supply path for supplying an inert gas.   The substrate processing apparatus according to claim 1, wherein the chemical solution supply nozzle is held by a shielding plate that prevents the chemical solution supplied to the substrate from the chemical solution supply nozzle from being scattered.   The substrate processing apparatus according to claim 1, wherein the chemical liquid supply nozzle is inclined and directed in a direction away from the center of the substrate.   The substrate processing apparatus according to claim 1, wherein a pure water supply nozzle is disposed inside the substrate with respect to the chemical solution supply nozzle.   6. The substrate processing apparatus according to claim 5, wherein the chemical solution supplied by the chemical solution supply nozzle is supplied into a region of pure water supplied by the pure water supply nozzle and flowing on the surface of the substrate.   The substrate processing apparatus according to claim 5, wherein the pure water supply nozzle is controlled to supply pure water at an earlier timing than the chemical solution supply nozzle.   The pure water supply nozzle is disposed inside the substrate with respect to the chemical liquid supply nozzle, and the inert gas supply nozzle is disposed within the substrate with respect to the pure water supply nozzle. The substrate processing apparatus according to any one of the above.   The chemical liquid supplied by the chemical liquid supply nozzle is supplied by the pure water supply nozzle and supplied in the area of pure water flowing on the surface of the substrate, and the pure water supplied by the pure water supply nozzle is inactive. 9. The substrate processing apparatus according to claim 8, wherein the substrate processing apparatus is supplied into a region of an inert gas supplied by a gas supply nozzle and flowing on the surface of the substrate.   The pure water supply nozzle is controlled to supply pure water at an earlier timing than the chemical solution supply nozzle, and the inert gas supply nozzle supplies an inert gas at an earlier timing than the pure water supply nozzle. The substrate processing apparatus according to claim 8, wherein the substrate processing apparatus is controlled as follows.

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