JP2003124129A - Compound semiconductor substrate - Google Patents
Compound semiconductor substrateInfo
- Publication number
- JP2003124129A JP2003124129A JP2001316832A JP2001316832A JP2003124129A JP 2003124129 A JP2003124129 A JP 2003124129A JP 2001316832 A JP2001316832 A JP 2001316832A JP 2001316832 A JP2001316832 A JP 2001316832A JP 2003124129 A JP2003124129 A JP 2003124129A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- semiconductor substrate
- gaas
- recess
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 150000001875 compounds Chemical class 0.000 title claims abstract description 41
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 10
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 4
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 13
- 238000001035 drying Methods 0.000 abstract description 12
- 230000007547 defect Effects 0.000 abstract description 9
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical group S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Weting (AREA)
- Led Devices (AREA)
Abstract
(57)【要約】
【課題】 有機金属気相成長を行った際の乾燥ムラに起
因する結晶層の欠陥が少ない化合物半導体基板を提供す
る。
【解決手段】 化合物半導体基板１０の独立した凹部１
１の底面１１ａと凹部１１の側面１１ｂ〜１１ｅとのな
す角度θ３、θ４が化合物半導体基板１０の材料である
化合物半導体の結晶方位に関係なく鈍角であるので、化
合物半導体基板１０を洗浄した後、乾燥する際に凹部１
１の側面が庇となることがなくなり、乾燥ムラが低減す
る。その結果、有機金属気相成長後の凹部１１の近傍の
結晶欠陥密度を低減することができる。
(57) [Problem] To provide a compound semiconductor substrate having few defects in a crystal layer due to uneven drying when metal organic chemical vapor deposition is performed. SOLUTION: An independent concave portion 1 of a compound semiconductor substrate 10 is provided.
Since the angles θ3 and θ4 between the bottom surface 11a of the substrate 1 and the side surfaces 11b to 11e of the concave portion 11 are obtuse angles irrespective of the crystal orientation of the compound semiconductor that is the material of the compound semiconductor substrate 10, after cleaning the compound semiconductor substrate 10, When drying, recess 1
The side surface of No. 1 does not become an eave, and drying unevenness is reduced. As a result, it is possible to reduce the crystal defect density near the concave portion 11 after the metal organic chemical vapor deposition.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、化合物半導体基板
に関する。TECHNICAL FIELD The present invention relates to a compound semiconductor substrate.
【０００２】[0002]
【従来の技術】図４は化合物半導体基板の従来例を示す
平面図であり、図５は化合物半導体基板の他の従来例を
示す平面図である。図６は図４及び図５の共通６−６線
断面図であり、図７は図４及び図５の共通７−７線断面
図である。2. Description of the Related Art FIG. 4 is a plan view showing a conventional example of a compound semiconductor substrate, and FIG. 5 is a plan view showing another conventional example of a compound semiconductor substrate. 6 is a sectional view taken along line 6-6 common to FIGS. 4 and 5, and FIG. 7 is a sectional view taken along line 7-7 common to FIGS. 4 and 5.
【０００３】図４及び図５に示す化合物半導体基板１、
２はいずれも電流狭窄用素子を作製するためのＧａＡｓ
基板である。これらＧａＡｓ基板１、２にフォトレジス
トからなるマスク材（図示せず。）を用いて図４、図５
に示すような複数の独立した円形状の凹部３若しくは矩
形状の凹部４を形成するため溶液エッチングを行うと、
ＧａＡｓの結晶の性質により図６及び図７に示すような
断面構造となる。The compound semiconductor substrate 1 shown in FIGS. 4 and 5.
2 is GaAs for making a device for current constriction
The substrate. A mask material (not shown) made of a photoresist is used for these GaAs substrates 1 and 2, and FIGS.
When solution etching is performed to form a plurality of independent circular recesses 3 or rectangular recesses 4 as shown in FIG.
Due to the nature of the GaAs crystal, the cross-sectional structure shown in FIGS. 6 and 7 is obtained.
【０００４】すなわち、例えばＧａＡｓ基板１の各凹部
３は、凹部３の底面３ａと一対の対向する側面３ｂ、３
ｃとのなす角度θ１が鈍角となり、残りの一対の対向す
る側面３ｄ、３ｅと凹部３の底面３ａとのなす角度θ２
が鋭角となる。これらの角度θ１、θ２はＧａＡｓ基板
１の材料であるＧａＡｓ結晶方位に関係する。ＧａＡｓ
基板２も同様である。That is, for example, each recess 3 of the GaAs substrate 1 has a bottom surface 3a of the recess 3 and a pair of opposing side surfaces 3b, 3b.
The angle θ1 formed by c is an obtuse angle, and the angle θ2 formed by the remaining pair of opposed side surfaces 3d and 3e and the bottom surface 3a of the recess 3 is formed.
Becomes an acute angle. These angles θ1 and θ2 are related to the GaAs crystal orientation which is the material of the GaAs substrate 1. GaAs
The same applies to the substrate 2.
【０００５】このような構造を有するＧａＡｓ基板１、
２にマスク材の除去や適切な前処理を行い有機金属気相
成長方法を用いて結晶成長が行われる。尚、図中５、６
０はそれぞれ平坦部を示している。A GaAs substrate 1 having such a structure,
2 is subjected to removal of the mask material and appropriate pretreatment, and crystal growth is performed using the metal organic chemical vapor deposition method. In addition, 5 and 6 in the figure
0 indicates a flat portion.
【０００６】[0006]
【発明が解決しようとする課題】ところで、複数の独立
した凹部３、４を有するＧａＡｓ基板１、２が図７に示
すような断面構造を有する場合、ＧａＡｓ基板１、２を
純水または有機溶剤等の液体で前処理を行ったとき、凹
部３、４の側面付近（特に庇部分）に乾燥ムラが発生
し、有機金属気相成長法により結晶成長したＧａＡｓ基
板には図８に示すような乾燥ムラに起因する欠陥が多く
発生するという問題があった。When the GaAs substrates 1 and 2 having a plurality of independent recesses 3 and 4 have a sectional structure as shown in FIG. 7, the GaAs substrates 1 and 2 are replaced with pure water or an organic solvent. When pretreatment is performed with a liquid such as the above, uneven drying occurs near the side surfaces of the recesses 3 and 4 (especially the eaves portion), and a GaAs substrate crystal-grown by the metal organic chemical vapor deposition method is shown in FIG. There is a problem that many defects due to uneven drying occur.
【０００７】図８は従来技術による有機金属気相成長後
の凹部の表面状態を示す平面図である。FIG. 8 is a plan view showing the surface condition of the concave portion after the metal organic chemical vapor deposition according to the prior art.
【０００８】そこで、本発明の目的は、上記課題を解決
し、有機金属気相成長を行った際の乾燥ムラに起因する
結晶層の欠陥が少ない化合物半導体基板を提供すること
にある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and provide a compound semiconductor substrate having few crystal layer defects due to uneven drying during metal organic chemical vapor deposition.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に本発明の化合物半導体基板は、複数の独立した凹部を
有し有機金属気相成長法により成膜材料が接合成長する
電流狭窄素子用の化合物半導体基板において、凹部の底
面と凹部の側面とのなす角度が鈍角であるものである。In order to achieve the above object, a compound semiconductor substrate of the present invention is used for a current confinement element having a plurality of independent recesses and in which a film forming material is grown by junction by a metal organic chemical vapor deposition method. In the compound semiconductor substrate of, the angle formed by the bottom surface of the recess and the side surface of the recess is an obtuse angle.
【００１０】上記構成に加え本発明の化合物半導体基板
は、化合物半導体基板がＧａＡｓからなり、化合物半導
体基板上にＧａＡｓまたは異種材料が接合成長するのが
好ましい。In addition to the above structure, in the compound semiconductor substrate of the present invention, it is preferable that the compound semiconductor substrate is made of GaAs, and GaAs or a different material is bonded and grown on the compound semiconductor substrate.
【００１１】本発明の化合物半導体基板は、平坦なＧａ
Ａｓ基板に有機金属気相成長法、液相成長法または分子
線成長法によりＧａＡｓまたは異種材料が成長し、底面
と側面とのなす角度が鈍角である複数の独立した凹部が
形成され、再度有機金属気相成長法によりＧａＡｓまた
は異種材料が気相成長したものである。The compound semiconductor substrate of the present invention has a flat Ga
GaAs or a different material is grown on the As substrate by metalorganic vapor phase epitaxy, liquid phase epitaxy, or molecular beam epitaxy to form a plurality of independent recesses having an obtuse angle between the bottom surface and the side surface. GaAs or a different material is vapor-deposited by the metal vapor deposition method.
【００１２】上記構成に加え本発明の化合物半導体基板
の異種材料は、ＡｌxＧａ1-xＡｓyＰ1-y（ｘ＝０〜１、
ｙ＝０〜１）、（ＡｌxＧａ1-x）yＩｎ1-yＰ（ｘ＝０〜
１、ｙ＝０〜１）、（ＡｌxＧａ1-x）yＩｎ1-yＡｓzＰ
1-z（ｘ＝０〜１、ｙ＝０〜１、ｚ＝０〜１）であるの
が好ましい。In addition to the above structure, the different materials of the compound semiconductor substrate of the present invention are Al x Ga 1-x As y P 1-y (x = 0 to 1,
y = 0 to 1), (Al x Ga 1-x ) y In 1-y P (x = 0 to 0)
1, y = 0 to 1), (Al x Ga 1-x ) y In 1-y As z P
It is preferably 1-z (x = 0 to 1, y = 0 to 1, z = 0 to 1).
【００１３】本発明によれば、化合物半導体基板の独立
した凹部の底面と凹部の側面とのなす角度が化合物半導
体基板の材料である化合物半導体の結晶方位に関係なく
鈍角であるので、化合物半導体基板を洗浄した後、乾燥
する際に凹部の側面が庇となることがなくなり、乾燥ム
ラが低減する。その結果、有機金属気相成長後の凹部の
近傍の結晶欠陥密度を低減することができる。According to the present invention, the angle formed by the bottom surface and the side surface of the independent recess of the compound semiconductor substrate is an obtuse angle regardless of the crystal orientation of the compound semiconductor which is the material of the compound semiconductor substrate. After the washing, the side surface of the concave portion does not become an eave when drying, and unevenness in drying is reduced. As a result, it is possible to reduce the crystal defect density in the vicinity of the recess after the metal organic chemical vapor deposition.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態を添付
図面に基づいて詳述する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
【００１５】図１（ａ）は本発明の化合物半導体基板の
一実施の形態を示す平面図であり、図１（ｂ）は図１
(ａ)の１ｂ−１ｂ線断面図であり、図１（ｃ）は図１
（ａ）の１ｃ−１ｃ線断面図である。図２は本発明の化
合物半導体基板の変形例を示す平面図である。FIG. 1 (a) is a plan view showing an embodiment of the compound semiconductor substrate of the present invention, and FIG. 1 (b) is FIG.
It is the 1b-1b sectional view taken on the line of (a), and FIG.
It is the 1c-1c sectional view taken on the line of (a). FIG. 2 is a plan view showing a modified example of the compound semiconductor substrate of the present invention.
【００１６】本化合物半導体基板１０は、複数の独立し
た凹部１１を有し有機金属気相成長法により成膜材料が
接合成長する電流狭窄素子用の化合物半導体基板であっ
て、凹部１１の底面１１ａと凹部１１の側面１１ｂ、１
１ｃ、１１ｄ、１１ｅとのなす角度θ３、θ４が全て鈍
角であることを特徴とするものである。尚、図中１２は
平坦部を示す。The present compound semiconductor substrate 10 is a compound semiconductor substrate for a current constriction element in which a plurality of independent recesses 11 are provided and a film forming material is bonded and grown by a metal organic chemical vapor deposition method. And side surfaces 11b, 1 of the recess 11
The angles θ3 and θ4 formed by 1c, 11d, and 11e are all obtuse angles. In the figure, 12 indicates a flat portion.
【００１７】このように構成することにより、独立した
凹部１１の底面１１ａと凹部１１の側面１１ｂ〜１１ｅ
とのなす角度θ３、θ４が化合物半導体の結晶方位に関
係なく鈍角であるので、化合物半導体基板１０を洗浄し
た後、乾燥する際に凹部１１の側面１１ｂ〜１１ｅがい
ずれも庇を形成することがなくなり、乾燥ムラが低減す
る。その結果、有機金属気相成長後の凹部１１の近傍の
結晶欠陥密度を低減することができる。尚、凹部１１の
形状は円形に限らず、図２に示す化合物半導体基板２０
のようにように矩形状の凹部２１であってもよい。尚、
図中２２は平坦部である。With this structure, the bottom surface 11a of the recess 11 and the side surfaces 11b to 11e of the recess 11 are independent.
Since the angles .theta.3 and .theta.4 formed by and are obtuse angles regardless of the crystal orientation of the compound semiconductor, when the compound semiconductor substrate 10 is washed and then dried, the side surfaces 11b to 11e of the recess 11 may form an eaves. And the unevenness of drying is reduced. As a result, it is possible to reduce the crystal defect density in the vicinity of the recess 11 after the metal organic chemical vapor deposition. The shape of the recess 11 is not limited to the circular shape, and the compound semiconductor substrate 20 shown in FIG.
Alternatively, the concave portion 21 may be rectangular. still,
In the figure, 22 is a flat portion.
【００１８】[0018]
【実施例】（実施例）ＧａＡｓ基板に、東京応化製フォ
トレジストＯＦＰＲ−８００を用いて独立した直径１６
０μｍの円形状のパターンを形成し、円形状のパターン
の形成されたＧａＡｓ基板を硫酸：過酸化水素水：純水
＝５：３：２５の組成のエッチング液に３分間浸漬し、
０．５μｍの凹部を形成した。凹部形成後、フォトレジ
ストを除去し、純水で洗浄した後、スピンドライヤーで
ＧａＡｓ基板を乾燥させ、有機金属気相成長法でＧａＡ
ｓ層を０．７μｍ成長させた。(Example) Using a photoresist OFPR-800 manufactured by Tokyo Ohka Co., Ltd. on a GaAs substrate, an independent diameter 16 was obtained.
A 0 μm circular pattern was formed, and the GaAs substrate on which the circular pattern was formed was immersed in an etching solution having a composition of sulfuric acid: hydrogen peroxide: pure water = 5: 3: 25 for 3 minutes,
A recess of 0.5 μm was formed. After forming the recesses, the photoresist is removed, and after cleaning with pure water, the GaAs substrate is dried with a spin dryer and GaA is grown by metalorganic vapor phase epitaxy.
The s layer was grown to 0.7 μm.
【００１９】尚、従来技術のＧａＡｓ基板の作製は、マ
スク材を化学気相成長法で形成したＳｉＯ2膜をマスク
材として用い、上述したエッチング条件でエッチングし
た後フッ酸でＳｉＯ2膜を除去し、純水洗浄後、スピン
ドライヤーでＧａＡｓ基板を乾燥させ、有機金属気相成
長法でＧａＡｓ層を０．７μｍ成長させた。In the fabrication of the GaAs substrate of the prior art, the SiO 2 film formed by the chemical vapor deposition method is used as the mask material, the SiO 2 film is removed by hydrofluoric acid after etching under the above etching conditions. Then, after washing with pure water, the GaAs substrate was dried with a spin dryer, and a GaAs layer was grown to 0.7 μm by a metal organic chemical vapor deposition method.
【００２０】図３は本発明による有機金属気相成長後の
凹部の表面状態を示す平面図である。FIG. 3 is a plan view showing the surface condition of the concave portion after the metal organic chemical vapor deposition according to the present invention.
【００２１】同図に示すように乾燥ムラに起因する欠陥
がないことが分かる。As shown in the figure, it can be seen that there is no defect due to uneven drying.
【００２２】本発明は上記実施例には限定されない。The present invention is not limited to the above embodiment.
【００２３】ｎ型ＧａＡｓ基板にｐ型半導体材料を形成
し、本発明の構造の凹部を形成した後、有機金属気相成
長を行うことにより、電流狭窄型素子用の接合を有する
半導体基板を低密度の結晶欠陥で形成することができ
る。After forming a p-type semiconductor material on an n-type GaAs substrate and forming a recess of the structure of the present invention, metal-organic vapor phase epitaxy is performed to lower the semiconductor substrate having a junction for a current constriction type device. It can be formed with crystal defects of high density.
【００２４】本発明のＧａＡｓ基板は、電流狭窄ＬＥＤ
等の電流狭窄素子に応用することができる。The GaAs substrate of the present invention is a current confining LED.
It can be applied to a current constriction element such as.
【００２５】[0025]
【発明の効果】以上要するに本発明によれば、次のよう
な優れた効果を発揮する。In summary, according to the present invention, the following excellent effects are exhibited.
【００２６】有機金属気相成長を行った際の乾燥ムラに
起因する結晶層の欠陥が少ない化合物半導体基板の提供
を実現することができる。It is possible to provide a compound semiconductor substrate having few crystal layer defects due to drying unevenness when performing metal organic chemical vapor deposition.
【図１】（ａ）は本発明の化合物半導体基板の一実施の
形態を示す平面図であり、（ｂ）は(ａ)の１ｂ−１ｂ線
断面図であり、（ｃ）は（ａ）の１ｃ−１ｃ線断面図で
ある。FIG. 1A is a plan view showing an embodiment of a compound semiconductor substrate of the present invention, FIG. 1B is a sectional view taken along line 1b-1b of FIG. 1A, and FIG. FIG. 1C is a sectional view taken along line 1c-1c of FIG.
【図２】本発明の化合物半導体基板の変形例を示す平面
図である。FIG. 2 is a plan view showing a modified example of the compound semiconductor substrate of the present invention.
【図３】本発明による有機金属気相成長後の凹部の表面
状態を示す平面図である。FIG. 3 is a plan view showing a surface state of a concave portion after metal organic chemical vapor deposition according to the present invention.
【図４】化合物半導体基板の従来例を示す平面図であ
る。FIG. 4 is a plan view showing a conventional example of a compound semiconductor substrate.
【図５】化合物半導体基板の他の従来例を示す平面図で
ある。FIG. 5 is a plan view showing another conventional example of a compound semiconductor substrate.
【図６】図４及び図５の共通６−６線断面図である。6 is a sectional view taken along line 6-6 of FIGS. 4 and 5.
【図７】図４及び図５の共通７−７線断面図である。FIG. 7 is a sectional view taken along line 7-7 of FIGS. 4 and 5;
【図８】従来技術による有機金属気相成長後の凹部の表
面状態を示す平面図である。FIG. 8 is a plan view showing a surface state of a concave portion after metal organic chemical vapor deposition according to a conventional technique.
１０ 化合物半導体基板 １１ 凹部 １１ａ 底面 １１ｂ〜１１ｅ 側面 ３０ 乾燥ムラ 10 Compound semiconductor substrate 11 recess 11a bottom 11b to 11e Side surface 30 Drying unevenness
Claims (4)
成長法により成膜材料が接合成長する電流狭窄素子用の
化合物半導体基板において、上記凹部の底面と上記凹部
の側面とのなす角度が鈍角であることを特徴とする化合
物半導体基板。1. A compound semiconductor substrate for a current confinement device, which has a plurality of independent recesses and in which a film forming material is junction grown by a metal organic chemical vapor deposition method, an angle formed by a bottom surface of the recess and a side surface of the recess. Is an obtuse angle, a compound semiconductor substrate.
り、上記化合物半導体基板上にＧａＡｓまたは異種材料
が接合成長した請求項１に記載の化合物半導体基板。2. The compound semiconductor substrate according to claim 1, wherein the compound semiconductor substrate is made of GaAs, and GaAs or a heterogeneous material is junction-grown on the compound semiconductor substrate.
法、液相成長法または分子線成長法によりＧａＡｓまた
は異種材料が成長し、底面と側面とのなす角度が鈍角で
ある複数の独立した凹部が形成され、再度有機金属気相
成長法によりＧａＡｓまたは異種材料が気相成長したこ
とを特徴とする化合物半導体基板。3. A GaAs substrate or a heterogeneous material is grown on a flat GaAs substrate by metalorganic vapor phase epitaxy, liquid phase epitaxy or molecular beam epitaxy, and a plurality of independent bottom faces and side faces form obtuse angles. A compound semiconductor substrate in which a recess is formed and GaAs or a different material is vapor-grown again by a metal organic chemical vapor deposition method.
1-y（ｘ＝０〜１、ｙ＝０〜１）、（ＡｌxＧａ1-x）yＩ
ｎ1-yＰ（ｘ＝０〜１、ｙ＝０〜１）、（Ａｌ xＧ
ａ1-X）yＩｎ1-yＡｓzＰ1-z（ｘ＝０〜１、ｙ＝０〜
１、ｚ＝０〜１）である請求項１〜３のいずれかに記載
の化合物半導体基板。4. The different material is AlxGa1-xAsyP
1-y(X = 0 to 1, y = 0 to 1), (AlxGa1-x)yI
n1-yP (x = 0 to 1, y = 0 to 1), (Al xG
a1-X)yIn1-yAszP1-z(X = 0 to 1, y = 0 to
1, z = 0 to 1), The method according to claim 1.
Compound semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001316832A JP2003124129A (en) | 2001-10-15 | 2001-10-15 | Compound semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001316832A JP2003124129A (en) | 2001-10-15 | 2001-10-15 | Compound semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003124129A true JP2003124129A (en) | 2003-04-25 |
Family
ID=19134784
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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| Country | Link |
|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8399944B2 (en) | 2002-09-02 | 2013-03-19 | Samsung Electronics Co., Ltd. | Light emitting diode and method for fabricating the same |
-
2001
- 2001-10-15 JP JP2001316832A patent/JP2003124129A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8399944B2 (en) | 2002-09-02 | 2013-03-19 | Samsung Electronics Co., Ltd. | Light emitting diode and method for fabricating the same |
| US8536604B2 (en) | 2002-09-02 | 2013-09-17 | Samsung Electronics Co., Ltd. | Light emitting diode and method for fabricating the same |
| US8952389B2 (en) | 2002-09-02 | 2015-02-10 | Samsung Electronics Co., Ltd. | Light emitting diode and method for fabricating the same |
| US9887315B2 (en) | 2002-09-02 | 2018-02-06 | Samsung Electronics Co., Ltd. | Light emitting diode and method for fabricating the same |
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