JP2001291595A5 - - Google Patents

Claims (29)

  A light emitting device comprising: an anode; a cathode; an EL layer between the anode and the cathode; and a reflective electrode in contact with the anode.   A light emitting device comprising: an anode over a reflective electrode; an EL layer over the anode; and a cathode over the EL layer.   3. The light emitting device according to claim 1, wherein the anode and the cathode are transparent to visible light.   A light emitting device comprising: an anode; a cathode; an EL layer between the anode and the cathode; a reflective electrode in contact with the anode; and an auxiliary electrode in contact with the cathode.   A light emitting device comprising: an anode over a reflective electrode; an EL layer over the anode; a cathode over the EL layer; and an auxiliary electrode over the cathode. 6. The light-emitting device according to claim 4 , wherein the anode, the cathode, and the auxiliary electrode are transparent to visible light. 7. The light-emitting device according to claim 4 , wherein the auxiliary electrode is an oxide conductive film. 8. The light emitting device according to claim 7, wherein the auxiliary electrode has a thickness of 10 nm to 200 nm. 9. The light emitting device according to claim 1, wherein the reflective electrode is a pixel electrode. In any one of claims 1 to 9, wherein the reflective electrode is a light-emitting device, characterized in that the thin film transistor are electrically connected. A light-emitting device comprising an anode over a metal film or a conductive film, an EL layer over the anode, and a cathode over the EL layer. 12. The light emitting device according to claim 11, wherein the anode and the cathode are transparent to visible light. A light emitting device comprising: an anode over a metal film or a conductive film; an EL layer over the anode; a cathode over the EL layer; and an auxiliary electrode over the cathode. The light-emitting device according to claim 13, wherein the anode, the cathode, and the auxiliary electrode are transparent to visible light. 15. The light emitting device according to claim 13, wherein the auxiliary electrode is an oxide conductive film. The light-emitting device according to claim 15, wherein the auxiliary electrode has a thickness of 10 nm to 200 nm. 17. The light-emitting device according to claim 11, wherein the metal film is a film containing aluminum or a silver thin film. 18. The light-emitting device according to claim 17, wherein the film containing aluminum is an aluminum film containing scandium or titanium. The light-emitting device according to claim 11, wherein the conductive film is a film plated with aluminum or silver. 20. The light-emitting device according to claim 11, wherein a thin film transistor is electrically connected to the metal film or the conductive film. In any one of claims 1 to 20, wherein the anode is an oxide conductive film, the cathode emitting device which is a transparent metal film to visible light. The light-emitting device according to claim 21, wherein the anode has a thickness of 10 nm to 200 nm. The light-emitting device according to claim 21, wherein the cathode has a thickness of 10 nm to 70 nm. Appliance, characterized in that it comprises a display unit or a light source a light emitting device according to any one of claims 1 to 23.   A method for manufacturing a light-emitting device, comprising: forming a reflective electrode; forming an anode over the reflective electrode; forming an EL layer over the anode; and forming a cathode over the EL layer. 26. The method for manufacturing a light-emitting device according to claim 25 , wherein the anode is formed using an oxide conductive film that is transparent to visible light, and the cathode is formed from a metal film that is transparent to visible light.   Forming a reflective electrode, forming an anode on the reflective electrode, forming an EL layer on the anode, forming a cathode on the EL layer, and forming an auxiliary electrode on the cathode A method for manufacturing a light-emitting device. 28. The light-emitting device according to claim 27 , wherein the anode and the auxiliary electrode are formed of an oxide conductive film that is transparent to visible light, and the cathode is formed of a metal film that is transparent to visible light. Manufacturing method. In any one of claims 25 to claim 28, a method for manufacturing a light emitting device, which comprises forming electrically connected to the reflective electrode to the thin film transistor.