JP2001085320A5 - - Google Patents
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- JP2001085320A5 JP2001085320A5 JP1999320514A JP32051499A JP2001085320A5 JP 2001085320 A5 JP2001085320 A5 JP 2001085320A5 JP 1999320514 A JP1999320514 A JP 1999320514A JP 32051499 A JP32051499 A JP 32051499A JP 2001085320 A5 JP2001085320 A5 JP 2001085320A5
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- JP
- Japan
- Prior art keywords
- film
- thin film
- photosensitive
- pattern
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010408 film Substances 0.000 description 26
- 239000010409 thin film Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229960001716 benzalkonium Drugs 0.000 description 2
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Description
【特許請求の範囲】
【請求項１】
透光性基板上に非透光性薄膜材料からなるパターンを形成し、
前記パターン上に感光性薄膜を形成し、
前記感光性薄膜を透過した光源からの光を前記基板の表面側に設けられた反射手段によって反射または散乱させ、前記基板の表面側から照射して前記感光性薄膜を露光し、
前記露光された感光性薄膜を現像することを特徴とする半導体装置の作製方法。
【請求項２】
透光性基板上に非透光性薄膜材料からなるパターンを形成し、
前記パターン上に感光性薄膜を形成し、
前記パターンをマスクとして光源からの光を前記基板の裏面側から照射して前記感光性薄膜を露光し、且つ、前記感光性薄膜を透過した前記光源からの光を前記基板の表面側に設けられた反射手段によって反射または散乱させ、前記基板の表面側から照射して前記感光性薄膜を露光し、
前記露光された感光性薄膜を現像することを特徴とする半導体装置の作製方法。
【請求項３】
請求項１または２において、前記現像された後の感光性薄膜の寸法は、前記非透光性薄膜材料からなるパターンの寸法より小さいことを特徴とする半導体装置の作製方法。
【請求項４】
透光性基板上にゲート配線を形成し、
前記ゲート配線上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に半導体膜を形成し、
前記半導体膜上に感光性薄膜を形成し、
前記ゲート配線をマスクとして光源からの光を前記基板の裏面側から照射して前記感光性薄膜を露光し、且つ、前記感光性薄膜を透過した前記光源からの光を前記基板の表面側に設けられた反射手段によって反射または散乱させ、前記基板の表面側から照射して前記感光性薄膜を露光し、
前記露光された部分を除去して感光性薄膜からなるパターンを形成し、
前記感光性薄膜からなるパターンをマスクとして前記半導体膜に導電型を付与する不純物を添加することを特徴とする半導体装置の作製方法。
【請求項５】
透光性基板上にゲート配線を形成し、
前記ゲート配線上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に半導体膜を形成し、
前記半導体膜上に絶縁性薄膜を形成し、
前記絶縁性薄膜上に感光性薄膜を形成し、
前記ゲート配線をマスクとして光源からの光を前記基板の裏面側から照射して前記感光性薄膜を露光し、且つ、前記感光性薄膜を透過した前記光源からの光を前記基板の表面側に設けられた反射手段によって反射または散乱させ、前記基板の表面側から照射して前記感光性薄膜を露光し、
前記露光された部分を除去して感光性薄膜からなるパターンを形成し、
前記パターンをマスクとして前記絶縁性薄膜を選択的に除去し、前記絶縁性薄膜からなるパターンを形成し、
前記感光性薄膜からなるパターンを除去し、
前記絶縁性薄膜からなるパターンをマスクとして前記半導体膜に導電型を付与する不純物を添加することを特徴とする半導体装置の作製方法。
【請求項６】
請求項４または５において、前記絶縁性薄膜は、窒化珪素膜、酸化窒化珪素膜、酸化珪素膜、有機樹脂膜から選ばれた単層膜、またはそれらの積層膜であることを特徴とする半導体装置の作製方法。
【請求項７】
請求項４乃至６のいずれか一において、前記感光性薄膜からなるパターンの寸法は、前記ゲート配線の寸法より小さいことを特徴とする半導体装置の作製方法。
【請求項８】
請求項１乃至７のいずれか一において、前記反射手段は、光反射性を有する材料膜が設けられた反射板であることを特徴とする半導体装置の作製方法。
[Claims]
[Claim 1]
Forming a pattern of non-translucent thin film material on a transparent substrate,
A photosensitive thin film is formed on the pattern,
The light from the light source transmitted through the photosensitive thin film is reflected or scattered by the reflection means provided on a surface side of the substrate, exposing the photosensitive film by irradiating the surface of the substrate,
The method for manufacturing a semiconductor device comprising the Turkey to developing the exposed photosensitive film.
2.
Forming a pattern of non-translucent thin film material on a transparent substrate,
A photosensitive thin film is formed on the pattern,
Using the pattern as a mask, light from the light source is irradiated from the back surface side of the substrate to expose the photosensitive thin film, and light from the light source transmitted through the photosensitive thin film is provided on the front surface side of the substrate. is reflected or scattered by the reflecting means is, by irradiating the surface of the substrate by exposing the photosensitive film,
The method for manufacturing a semiconductor device comprising the Turkey to developing the exposed photosensitive film.
3.
The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the size of the photosensitive thin film after development is smaller than the size of the pattern made of the non-transmissive thin film material.
4.
Forming a gate wiring on a transparent substrate,
Forming a gate insulating film on the gate wiring,
Forming a semiconductor film on the gate insulating film,
The photosensitive thin film formed on the semiconductor film,
Using the gate wiring as a mask, light from the light source is irradiated from the back surface side of the substrate to expose the photosensitive thin film, and light from the light source transmitted through the photosensitive thin film is provided on the front surface side of the substrate. is is reflected or scattered by the reflection means and, exposing the photosensitive film by irradiating the surface of the substrate,
The exposed portion is removed to form a pattern made of a photosensitive thin film.
The method for manufacturing a semiconductor device comprising a benzalkonium be added with an impurity which imparts the semiconductor film conductivity type a pattern of the photosensitive film as a mask.
5.
Forming a gate wiring on a transparent substrate,
Forming a gate insulating film on the gate wiring,
Forming a semiconductor film on the gate insulating film,
The insulating thin film formed on the semiconductor film,
The photosensitive thin film formed on the insulating film,
Using the gate wiring as a mask, light from the light source is irradiated from the back surface side of the substrate to expose the photosensitive thin film, and light from the light source transmitted through the photosensitive thin film is provided on the front surface side of the substrate. is is reflected or scattered by the reflection means and, exposing the photosensitive film by irradiating the surface of the substrate,
The exposed portion is removed to form a pattern made of a photosensitive thin film.
Using the pattern as a mask, the insulating thin film is selectively removed to form a pattern composed of the insulating thin film.
The pattern composed of the photosensitive thin film is removed, and the pattern is removed.
The method for manufacturing a semiconductor device comprising a benzalkonium be added with an impurity which imparts the semiconductor film conductivity type a pattern of the insulating film as a mask.
6.
The semiconductor according to claim 4 or 5 , wherein the insulating thin film is a single-layer film selected from a silicon nitride film, a silicon oxide film, a silicon oxide film, and an organic resin film, or a laminated film thereof. How to make the device.
7.
The method for manufacturing a semiconductor device according to any one of claims 4 to 6 , wherein the size of the pattern made of the photosensitive thin film is smaller than the size of the gate wiring.
8.
The method for manufacturing a semiconductor device according to any one of claims 1 to 7 , wherein the reflecting means is a reflector provided with a material film having light reflectivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32051499A JP4357672B2 (en) | 1998-11-11 | 1999-11-11 | Exposure apparatus, exposure method, and manufacturing method of semiconductor device |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-321123 | 1998-11-11 | ||
| JP32112398 | 1998-11-11 | ||
| JP11-196734 | 1999-07-09 | ||
| JP19673499 | 1999-07-09 | ||
| JP32051499A JP4357672B2 (en) | 1998-11-11 | 1999-11-11 | Exposure apparatus, exposure method, and manufacturing method of semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001085320A JP2001085320A (en) | 2001-03-30 |
| JP2001085320A5 true JP2001085320A5 (en) | 2007-01-11 |
| JP4357672B2 JP4357672B2 (en) | 2009-11-04 |
Family
ID=27327291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32051499A Expired - Fee Related JP4357672B2 (en) | 1998-11-11 | 1999-11-11 | Exposure apparatus, exposure method, and manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4357672B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1393389B1 (en) * | 2001-05-23 | 2018-12-05 | Flexenable Limited | Laser patterning of devices |
| JP4578826B2 (en) * | 2004-02-26 | 2010-11-10 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| KR101031716B1 (en) | 2004-06-26 | 2011-04-29 | 엘지디스플레이 주식회사 | Gate electrode forming method and manufacturing method of liquid crystal display device using same |
| KR100701088B1 (en) | 2004-10-26 | 2007-03-29 | 비오이 하이디스 테크놀로지 주식회사 | Method of manufacturing fringe field switching mode liquid crystal display |
| JP4675680B2 (en) * | 2005-05-30 | 2011-04-27 | シャープ株式会社 | Method for manufacturing thin film transistor substrate |
| JP5323604B2 (en) * | 2009-07-30 | 2013-10-23 | 株式会社ジャパンディスプレイ | Display device and manufacturing method thereof |
| KR102057299B1 (en) | 2009-07-31 | 2019-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
| CN110095941B (en) * | 2011-12-26 | 2023-02-17 | 东丽株式会社 | Photosensitive resin composition and method for producing semiconductor element |
| KR20180071644A (en) | 2016-12-20 | 2018-06-28 | 삼성전기주식회사 | Inductor |
-
1999
- 1999-11-11 JP JP32051499A patent/JP4357672B2/en not_active Expired - Fee Related
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