HK1151106A1 - 曝光装置、设备生产方法、及曝光装置的控制方法 - Google Patents

曝光装置、设备生产方法、及曝光装置的控制方法 Download PDF

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Publication number
HK1151106A1
HK1151106A1 HK11104984.7A HK11104984A HK1151106A1 HK 1151106 A1 HK1151106 A1 HK 1151106A1 HK 11104984 A HK11104984 A HK 11104984A HK 1151106 A1 HK1151106 A1 HK 1151106A1
Authority
HK
Hong Kong
Prior art keywords
liquid
substrate
substrate stage
exposure apparatus
optical system
Prior art date
Application number
HK11104984.7A
Other languages
German (de)
English (en)
French (fr)
Other versions
HK1151106B (zh
Inventor
Nobutaka Magome
Naoyuki Kobayashi
Yasuyuki Sakakibara
Hiroaki Takaiwa
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Publication of HK1151106A1 publication Critical patent/HK1151106A1/zh
Publication of HK1151106B publication Critical patent/HK1151106B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
HK11104984.7A 2003-07-28 2011-05-20 曝光装置、设备生产方法、及曝光装置的控制方法 HK1151106B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003281183 2003-07-28
JP2003281183 2003-07-28
JP2004045104 2004-02-20
JP2004045104 2004-02-20

Publications (2)

Publication Number Publication Date
HK1151106A1 true HK1151106A1 (zh) 2012-01-20
HK1151106B HK1151106B (zh) 2013-07-05

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Publication number Publication date
US10185232B2 (en) 2019-01-22
JP5594399B2 (ja) 2014-09-24
KR20140027560A (ko) 2014-03-06
EP2264534A3 (en) 2011-04-20
US20170363972A1 (en) 2017-12-21
KR101935709B1 (ko) 2019-01-04
EP1653501B1 (en) 2012-09-19
EP2264535B1 (en) 2013-02-13
JP5423829B2 (ja) 2014-02-19
JP2010109393A (ja) 2010-05-13
JP2017194723A (ja) 2017-10-26
KR101785707B1 (ko) 2017-11-06
JP5287926B2 (ja) 2013-09-11
JP5170126B2 (ja) 2013-03-27
US20190121246A1 (en) 2019-04-25
US20060132737A1 (en) 2006-06-22
EP2264533B1 (en) 2012-09-19
EP1653501A4 (en) 2008-05-21
TWI490916B (zh) 2015-07-01
US9494871B2 (en) 2016-11-15
KR101403117B1 (ko) 2014-06-03
EP2264533A3 (en) 2011-04-20
US7505115B2 (en) 2009-03-17
KR20160088447A (ko) 2016-07-25
US20170038694A1 (en) 2017-02-09
TWI633581B (zh) 2018-08-21
CN104122760A (zh) 2014-10-29
KR101343720B1 (ko) 2013-12-20
KR101298864B1 (ko) 2013-08-21
KR101642670B1 (ko) 2016-07-25
JP5088389B2 (ja) 2012-12-05
KR101414896B1 (ko) 2014-07-03
TWI490915B (zh) 2015-07-01
CN102012641A (zh) 2011-04-13
EP2264534B1 (en) 2013-07-17
KR20140119832A (ko) 2014-10-10
KR20170117232A (ko) 2017-10-20
JP2010118689A (ja) 2010-05-27
EP2264533A2 (en) 2010-12-22
JP5664740B2 (ja) 2015-02-04
JP6020653B2 (ja) 2016-11-02
TWI424463B (zh) 2014-01-21
TW200509212A (en) 2005-03-01
WO2005010962A1 (ja) 2005-02-03
KR20120066054A (ko) 2012-06-21
US9760026B2 (en) 2017-09-12
TW201205644A (en) 2012-02-01
KR101641011B1 (ko) 2016-07-19
JP2012151493A (ja) 2012-08-09
KR101599649B1 (ko) 2016-03-14
JP5776818B2 (ja) 2015-09-09
CN102043350B (zh) 2014-01-29
JP2016170437A (ja) 2016-09-23
JP2019049740A (ja) 2019-03-28
US20130135597A1 (en) 2013-05-30
TW201705213A (zh) 2017-02-01
JP2015172772A (ja) 2015-10-01
US8451424B2 (en) 2013-05-28
HK1151107A1 (zh) 2012-01-20
JP2010109392A (ja) 2010-05-13
JP2014017527A (ja) 2014-01-30
CN102012641B (zh) 2015-05-06
KR20190002749A (ko) 2019-01-08
KR20110117207A (ko) 2011-10-26
KR20150092349A (ko) 2015-08-12
KR20060052882A (ko) 2006-05-19
EP2264535A2 (en) 2010-12-22
TWI490914B (zh) 2015-07-01
JP2014140079A (ja) 2014-07-31
US20060146305A1 (en) 2006-07-06
TWI575563B (zh) 2017-03-21
TW201403666A (zh) 2014-01-16
JP6292252B2 (ja) 2018-03-14
CN102323724A (zh) 2012-01-18
TW201403667A (zh) 2014-01-16
HK1151105A1 (zh) 2012-01-20
TW201403669A (zh) 2014-01-16
JP2013214761A (ja) 2013-10-17
TW201403668A (zh) 2014-01-16
HK1200922A1 (zh) 2015-08-14
JP2011160001A (ja) 2011-08-18
US20140233002A1 (en) 2014-08-21
EP2264534A2 (en) 2010-12-22
TW201834019A (zh) 2018-09-16
US8749757B2 (en) 2014-06-10
CN102043350A (zh) 2011-05-04
TWI547971B (zh) 2016-09-01
KR20130086635A (ko) 2013-08-02
HK1090175A1 (zh) 2006-12-15
CN102323724B (zh) 2014-08-13
EP1653501A1 (en) 2006-05-03
EP2264535A3 (en) 2011-04-20
CN104122760B (zh) 2017-04-19
JP2010118690A (ja) 2010-05-27

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Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200723