EP2803077A4 - CIRCUITS WITH LINEAR FINFET STRUCTURES - Google Patents

CIRCUITS WITH LINEAR FINFET STRUCTURES

Info

Publication number
EP2803077A4
EP2803077A4 EP13735704.2A EP13735704A EP2803077A4 EP 2803077 A4 EP2803077 A4 EP 2803077A4 EP 13735704 A EP13735704 A EP 13735704A EP 2803077 A4 EP2803077 A4 EP 2803077A4
Authority
EP
European Patent Office
Prior art keywords
circuits
finfet structures
linear
linear finfet
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13735704.2A
Other languages
German (de)
French (fr)
Other versions
EP2803077A1 (en
Inventor
Scott T Becker
Micheal C Smayling
Jim Mali
Carole Lambert
Jonathan R Quandt
Daryl Fox
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tela Innovations Inc
Original Assignee
Tela Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tela Innovations Inc filed Critical Tela Innovations Inc
Publication of EP2803077A1 publication Critical patent/EP2803077A1/en
Publication of EP2803077A4 publication Critical patent/EP2803077A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0243—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
EP13735704.2A 2012-01-13 2013-01-13 CIRCUITS WITH LINEAR FINFET STRUCTURES Withdrawn EP2803077A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261586387P 2012-01-13 2012-01-13
US201261589224P 2012-01-20 2012-01-20
PCT/US2013/021345 WO2013106799A1 (en) 2012-01-13 2013-01-13 Circuits with linear finfet structures

Publications (2)

Publication Number Publication Date
EP2803077A1 EP2803077A1 (en) 2014-11-19
EP2803077A4 true EP2803077A4 (en) 2015-11-04

Family

ID=48781972

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13735704.2A Withdrawn EP2803077A4 (en) 2012-01-13 2013-01-13 CIRCUITS WITH LINEAR FINFET STRUCTURES

Country Status (8)

Country Link
EP (1) EP2803077A4 (en)
JP (3) JP2015506589A (en)
KR (1) KR101913457B1 (en)
CN (2) CN104303263B (en)
AU (4) AU2013207719B2 (en)
SG (2) SG10201605564WA (en)
TW (4) TWI608593B (en)
WO (1) WO2013106799A1 (en)

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US9478541B2 (en) * 2014-09-08 2016-10-25 Qualcomm Incorporated Half node scaling for vertical structures
US9607988B2 (en) 2015-01-30 2017-03-28 Qualcomm Incorporated Off-center gate cut
US9640480B2 (en) * 2015-05-27 2017-05-02 Qualcomm Incorporated Cross-couple in multi-height sequential cells for uni-directional M1
US10177127B2 (en) * 2015-09-04 2019-01-08 Hong Kong Beida Jade Bird Display Limited Semiconductor apparatus and method of manufacturing the same
US10541243B2 (en) 2015-11-19 2020-01-21 Samsung Electronics Co., Ltd. Semiconductor device including a gate electrode and a conductive structure
US9748389B1 (en) 2016-03-25 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for semiconductor device fabrication with improved source drain epitaxy
US10262981B2 (en) * 2016-04-29 2019-04-16 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit, system for and method of forming an integrated circuit
US10366196B2 (en) * 2016-06-22 2019-07-30 Qualcomm Incorporated Standard cell architecture for diffusion based on fin count
US9972571B1 (en) * 2016-12-15 2018-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. Logic cell structure and method
US10186510B2 (en) * 2017-05-01 2019-01-22 Advanced Micro Devices, Inc. Vertical gate all around library architecture
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JP7054013B2 (en) * 2017-06-27 2022-04-13 株式会社ソシオネクスト Semiconductor integrated circuit equipment
US10503863B2 (en) 2017-08-30 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit and method of manufacturing same
WO2019059907A1 (en) 2017-09-20 2019-03-28 Intel Corporation Multi version library cell handling and integrated circuit structures fabricated therefrom
US10468428B1 (en) * 2018-04-19 2019-11-05 Silicon Storage Technology, Inc. Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same
US10818762B2 (en) * 2018-05-25 2020-10-27 Advanced Micro Devices, Inc. Gate contact over active region in cell
US11017146B2 (en) 2018-07-16 2021-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit and method of forming the same
US10878165B2 (en) * 2018-07-16 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for generating layout diagram including protruding pin cell regions and semiconductor device based on same
CN112585752B (en) * 2018-09-05 2023-09-19 东京毅力科创株式会社 Power distribution network for 3D logic and memory
US11030372B2 (en) 2018-10-31 2021-06-08 Taiwan Semiconductor Manufacturing Company Ltd. Method for generating layout diagram including cell having pin patterns and semiconductor device based on same
US11093684B2 (en) 2018-10-31 2021-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Power rail with non-linear edge
US10796061B1 (en) * 2019-08-29 2020-10-06 Advanced Micro Devices, Inc. Standard cell and power grid architectures with EUV lithography
KR102849284B1 (en) * 2019-10-08 2025-08-25 삼성전자주식회사 Semiconductor device and manufacturing method of the same
US11735525B2 (en) 2019-10-21 2023-08-22 Tokyo Electron Limited Power delivery network for CFET with buried power rails
US11600707B2 (en) 2020-05-12 2023-03-07 Micron Technology, Inc. Methods of forming conductive pipes between neighboring features, and integrated assemblies having conductive pipes between neighboring features
US11862620B2 (en) 2020-09-15 2024-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Power gating cell structure
US20230299069A1 (en) * 2021-09-27 2023-09-21 Invention And Collaboration Laboratory Pte. Ltd. Standard cell structure
EP4434092A4 (en) * 2021-11-16 2025-10-08 Hsu Fu Chang ADVANCED STRUCTURES WITH MOSFET TRANSISTORS AND METAL LAYERS

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See also references of WO2013106799A1 *

Also Published As

Publication number Publication date
AU2020201521A1 (en) 2020-03-19
SG11201404024YA (en) 2014-08-28
JP6467476B2 (en) 2019-02-13
JP2015506589A (en) 2015-03-02
AU2016202229A1 (en) 2016-05-05
TWI608593B (en) 2017-12-11
AU2016202229B2 (en) 2018-02-15
CN104303263A (en) 2015-01-21
AU2013207719B2 (en) 2016-02-25
TW201349451A (en) 2013-12-01
CN104303263B (en) 2016-12-14
TW201717355A (en) 2017-05-16
TW201642440A (en) 2016-12-01
EP2803077A1 (en) 2014-11-19
AU2018200549B2 (en) 2019-12-05
KR20140114424A (en) 2014-09-26
WO2013106799A1 (en) 2013-07-18
CN107424999A (en) 2017-12-01
SG10201605564WA (en) 2016-09-29
TW201803084A (en) 2018-01-16
JP2017224858A (en) 2017-12-21
TWI581403B (en) 2017-05-01
AU2018200549A1 (en) 2018-02-15
JP2019054297A (en) 2019-04-04
KR101913457B1 (en) 2018-10-30
AU2013207719A1 (en) 2014-07-31
TWI552307B (en) 2016-10-01

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