EP2497105A4 - SYSTEMS AND METHODS FOR PARTIALLY FUSED THIN FILM PROCESSING WITH NON PERIODIC PULSES - Google Patents

SYSTEMS AND METHODS FOR PARTIALLY FUSED THIN FILM PROCESSING WITH NON PERIODIC PULSES

Info

Publication number
EP2497105A4
EP2497105A4 EP10828974.5A EP10828974A EP2497105A4 EP 2497105 A4 EP2497105 A4 EP 2497105A4 EP 10828974 A EP10828974 A EP 10828974A EP 2497105 A4 EP2497105 A4 EP 2497105A4
Authority
EP
European Patent Office
Prior art keywords
systems
methods
thin film
film processing
partially fused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10828974.5A
Other languages
German (de)
French (fr)
Other versions
EP2497105A1 (en
Inventor
James S Im
Yikang Deng
Qiongying Hu
Ui-Jin Chung
Alexander B Limanov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Columbia University in the City of New York
Original Assignee
Columbia University in the City of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/776,756 external-priority patent/US8440581B2/en
Application filed by Columbia University in the City of New York filed Critical Columbia University in the City of New York
Priority claimed from PCT/US2010/055106 external-priority patent/WO2011056787A1/en
Publication of EP2497105A1 publication Critical patent/EP2497105A1/en
Publication of EP2497105A4 publication Critical patent/EP2497105A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
EP10828974.5A 2009-11-03 2010-11-02 SYSTEMS AND METHODS FOR PARTIALLY FUSED THIN FILM PROCESSING WITH NON PERIODIC PULSES Withdrawn EP2497105A4 (en)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US25765709P 2009-11-03 2009-11-03
US25765009P 2009-11-03 2009-11-03
US26408209P 2009-11-24 2009-11-24
US28664309P 2009-12-15 2009-12-15
US29166309P 2009-12-31 2009-12-31
US29148809P 2009-12-31 2009-12-31
US29428810P 2010-01-12 2010-01-12
US2010003356 2010-05-04
US12/776,756 US8440581B2 (en) 2009-11-24 2010-05-10 Systems and methods for non-periodic pulse sequential lateral solidification
PCT/US2010/055106 WO2011056787A1 (en) 2009-11-03 2010-11-02 Systems and methods for non-periodic pulse partial melt film processing

Publications (2)

Publication Number Publication Date
EP2497105A1 EP2497105A1 (en) 2012-09-12
EP2497105A4 true EP2497105A4 (en) 2013-11-20

Family

ID=46640467

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10828974.5A Withdrawn EP2497105A4 (en) 2009-11-03 2010-11-02 SYSTEMS AND METHODS FOR PARTIALLY FUSED THIN FILM PROCESSING WITH NON PERIODIC PULSES

Country Status (1)

Country Link
EP (1) EP2497105A4 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050059265A1 (en) * 2003-09-16 2005-03-17 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
DE102007025942A1 (en) * 2007-06-04 2008-12-11 Coherent Gmbh Process for the selective thermal surface treatment of a surface substrate
US20090121157A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050059265A1 (en) * 2003-09-16 2005-03-17 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
DE102007025942A1 (en) * 2007-06-04 2008-12-11 Coherent Gmbh Process for the selective thermal surface treatment of a surface substrate
US20090121157A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2011056787A1 *

Also Published As

Publication number Publication date
EP2497105A1 (en) 2012-09-12

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Inventor name: LIMANOV, ALEXANDER, B.

Inventor name: DENG, YIKANG

Inventor name: HU, QIONGYING

Inventor name: CHUNG, UI-JIN

Inventor name: IM, JAMES, S.

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Effective date: 20131023

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Inventor name: IM, JAMES, S.

Inventor name: HU, QIONGYING

Inventor name: DENG, YIKANG

Inventor name: CHUNG, UI-JIN

Inventor name: LIMANOV, ALEXANDER, B.

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