DE69522405D1 - Speicheranordnung - Google Patents

Speicheranordnung

Info

Publication number
DE69522405D1
DE69522405D1 DE69522405T DE69522405T DE69522405D1 DE 69522405 D1 DE69522405 D1 DE 69522405D1 DE 69522405 T DE69522405 T DE 69522405T DE 69522405 T DE69522405 T DE 69522405T DE 69522405 D1 DE69522405 D1 DE 69522405D1
Authority
DE
Germany
Prior art keywords
storage arrangement
arrangement
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69522405T
Other languages
English (en)
Other versions
DE69522405T2 (de
Inventor
Bruce Alphenaar
Zahid Ali Khan Durrani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Europe Ltd
Original Assignee
Hitachi Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Europe Ltd filed Critical Hitachi Europe Ltd
Application granted granted Critical
Publication of DE69522405D1 publication Critical patent/DE69522405D1/de
Publication of DE69522405T2 publication Critical patent/DE69522405T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H10D8/755—Resonant tunneling diodes [RTD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
DE69522405T 1994-10-20 1995-06-29 Speicheranordnung Expired - Fee Related DE69522405T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9421138A GB9421138D0 (en) 1994-10-20 1994-10-20 Memory device

Publications (2)

Publication Number Publication Date
DE69522405D1 true DE69522405D1 (de) 2001-10-04
DE69522405T2 DE69522405T2 (de) 2002-06-06

Family

ID=10763127

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69522405T Expired - Fee Related DE69522405T2 (de) 1994-10-20 1995-06-29 Speicheranordnung

Country Status (5)

Country Link
US (2) US5811832A (de)
EP (1) EP0708487B1 (de)
JP (1) JPH08213561A (de)
DE (1) DE69522405T2 (de)
GB (1) GB9421138D0 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060743A (en) * 1997-05-21 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
DE69720441T2 (de) * 1997-09-05 2003-12-24 Hitachi Europ Ltd Bauelement mit gesteuerter Leitung
US6596617B1 (en) * 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6559470B2 (en) * 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6518589B2 (en) 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US7453083B2 (en) * 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6894327B1 (en) 2001-12-21 2005-05-17 Progressant Technologies, Inc. Negative differential resistance pull up element
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US7839226B2 (en) * 2006-07-18 2010-11-23 Raytheon Company Method and apparatus for effecting stable operation of resonant tunneling diodes
JP5268043B2 (ja) * 2007-03-08 2013-08-21 独立行政法人物質・材料研究機構 極微小ダイオード及びその製造方法
WO2008148031A2 (en) 2007-05-23 2008-12-04 University Of Florida Research Foundation, Inc Method and apparatus for light absorption and charged carrier transport
US7811851B2 (en) * 2007-09-28 2010-10-12 Freescale Semiconductor, Inc. Phase change memory structures
US8283198B2 (en) 2010-05-10 2012-10-09 Micron Technology, Inc. Resistive memory and methods of processing resistive memory
WO2021210095A1 (ja) 2020-04-15 2021-10-21 富士通株式会社 半導体装置、リザバーコンピューティングシステム及び半導体装置の製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL191683C (nl) * 1977-02-21 1996-02-05 Zaidan Hojin Handotai Kenkyu Halfgeleidergeheugenschakeling.
US4198644A (en) * 1978-06-09 1980-04-15 The United States Of America As Represented By The Secretary Of The Army Tunnel diode
JPS6150359A (ja) * 1984-08-20 1986-03-12 Fujitsu Ltd 半導体記憶装置
US4853753A (en) * 1987-07-01 1989-08-01 American Telephone And Telegraph Company, At&T Bell Laboratories Resonant-tunneling device, and mode of device operation
EP0297778A3 (de) 1987-07-01 1991-04-03 AT&T Corp. Vorrichtung mit resonanter Tunneleffektanordnung, deren Strom-Spannungs-Charakteristik mehrere Spitzen hat
JP2690922B2 (ja) * 1987-12-25 1997-12-17 株式会社日立製作所 共鳴トンネリング素子
US5047810A (en) * 1989-01-09 1991-09-10 At&T Bell Laboratories Optically controlled resonant tunneling electronic devices
EP0413333A3 (en) * 1989-08-18 1991-07-24 Hitachi, Ltd. A superconductized semiconductor device
US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
US5536947A (en) * 1991-01-18 1996-07-16 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom
US5363322A (en) * 1991-04-02 1994-11-08 Motorola, Inc. Data processor with an integer multiplication function on a fractional multiplier
EP0510557A3 (en) * 1991-04-22 1994-06-22 Nippon Telegraph & Telephone Resonant tunneling transistor
GB2256746B (en) * 1991-06-12 1995-05-03 Marconi Gec Ltd Semiconductor devices
JP3361135B2 (ja) * 1991-12-20 2003-01-07 テキサス インスツルメンツ インコーポレイテツド 量子効果論理ユニットとその製造方法
JPH06112438A (ja) * 1992-09-25 1994-04-22 Fujitsu Ltd 記憶装置、その情報読出し方法、情報書込み方法および記憶装置の製造方法
JPH06188404A (ja) * 1992-12-18 1994-07-08 Ricoh Co Ltd 負荷抵抗集積型半導体光機能素子
US5390145A (en) * 1993-04-15 1995-02-14 Fujitsu Limited Resonance tunnel diode memory
US5422305A (en) * 1993-10-29 1995-06-06 Texas Instruments Incorporated Method of forming implanted silicon resonant tunneling barriers
US5416040A (en) * 1993-11-15 1995-05-16 Texas Instruments Incorporated Method of making an integrated field effect transistor and resonant tunneling diode
US5563087A (en) * 1994-03-11 1996-10-08 Motorola Method of fabricating InAs/GaSb/AlSb material system SRAM
US5629922A (en) * 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
US5565695A (en) * 1995-04-21 1996-10-15 Johnson; Mark B. Magnetic spin transistor hybrid circuit element
US5629546A (en) * 1995-06-21 1997-05-13 Micron Technology, Inc. Static memory cell and method of manufacturing a static memory cell

Also Published As

Publication number Publication date
EP0708487A1 (de) 1996-04-24
DE69522405T2 (de) 2002-06-06
EP0708487B1 (de) 2001-08-29
US5811832A (en) 1998-09-22
GB9421138D0 (en) 1994-12-07
JPH08213561A (ja) 1996-08-20
US6194303B1 (en) 2001-02-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee