CN209017001U - Chip structure of a novel surface acoustic wave or shear wave excited bulk acoustic wave microwave device - Google Patents
Chip structure of a novel surface acoustic wave or shear wave excited bulk acoustic wave microwave device Download PDFInfo
- Publication number
- CN209017001U CN209017001U CN201822082080.6U CN201822082080U CN209017001U CN 209017001 U CN209017001 U CN 209017001U CN 201822082080 U CN201822082080 U CN 201822082080U CN 209017001 U CN209017001 U CN 209017001U
- Authority
- CN
- China
- Prior art keywords
- acoustic wave
- electrode
- groove
- piezoelectric material
- surface acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 57
- 230000005284 excitation Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000010432 diamond Substances 0.000 claims description 23
- 229910003460 diamond Inorganic materials 0.000 claims description 23
- 238000003466 welding Methods 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 15
- 238000003780 insertion Methods 0.000 abstract description 5
- 230000037431 insertion Effects 0.000 abstract description 5
- 238000004891 communication Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 230000012010 growth Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000002305 electric material Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 241001282153 Scopelogadus mizolepis Species 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002044 microwave spectrum Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
本实用新型公开了一种新型声表面波或横波激励体声波微波器件芯片结构，该芯片结构包括：声表面波或横波激励体声波微波器件芯片电路和芯片基体，芯片基体上设置有第一凹槽和第二凹槽，第一凹槽内填充有第一压电材料，第一压电材料上设置有第一电极，第一电极的一端和第一压电材料相连，另一端和芯片电路的信号输入端相连；第二凹槽内填充有第二压电材料，第二压电材料上设置有第二电极，第二电极的一端和第二压电材料相连，另一端和芯片电路的信号输出端相连。本实用新型提供的一种新型声表面波或横波激励体声波微波器件芯片结构，降低了器件的传输损耗及微波插入损耗，提高了器件的频率及品质因数等性能。
The utility model discloses a novel surface acoustic wave or shear wave excited bulk acoustic wave microwave device chip structure. The chip structure comprises: a surface acoustic wave or shear wave excited bulk acoustic wave microwave device chip circuit and a chip substrate, the chip substrate is provided with a first concave A groove and a second groove, the first groove is filled with a first piezoelectric material, a first electrode is arranged on the first piezoelectric material, one end of the first electrode is connected to the first piezoelectric material, and the other end is connected to the chip circuit The second groove is filled with a second piezoelectric material, a second electrode is arranged on the second piezoelectric material, one end of the second electrode is connected with the second piezoelectric material, and the other end is connected with the chip circuit. connected to the signal output. The utility model provides a novel surface acoustic wave or shear wave excitation bulk acoustic wave microwave device chip structure, which reduces the transmission loss and microwave insertion loss of the device, and improves the performance of the device such as frequency and quality factor.
Description
Technical field
The utility model relates to microwave communication equipment technical fields, swash more particularly to a kind of new type of SAW or shear wave
Encourage bulk acoustic wave microwave device chip structure.
Background technique
Surface acoustic wave (SAW) and bulk acoustic wave device (FBAR) all play in various communication equipments, system, terminal to Guan Chong
The effect wanted, technical indicator and characteristic are the key that communication equipment performances.If wherein the sonic transmissions loss of material can be shown
Writing reduces, and has significant increase for the anti-interference ability and power consumption of communication equipment.Do not changing existing surface acoustic wave and body sound
In the case that wave device designs, realize that transmission loss is greatly reduced for modern communications equipment to Guan Chong by new diseases
It wants.The frequency spectrum resource being becoming tight day now, device miniaturization, highly integrated, low in energy consumption, the technologies such as small of generating heat demand are also more next
It is more urgent, in surface acoustic wave and bulk acoustic wave device use various new materials, diamond especially therein increasingly by
Pay attention to.
Diamond longitudinal wave velocity is up to 18000m/s, highest in existing nature and synthetic material, relatively common pressure
Electric material is 3-10 times high, and the surface acoustic wave and bulk acoustic wave device of preparation have high quality factor (Q value).Surface acoustic wave and body
Sound wave microwave device has been used for various high-frequency high-power communication equipments, system and terminal, such as delay line, resonator, filtering
Device, acousto-optic modulator, acoustooptic switch.However surface acoustic wave and bulk acoustic wave device use Common piezoelectricity materials to transmit base mostly
Body, sound transmission loss is serious, and response frequency is restricted by the low acoustic propagation velocity of piezoelectric material.And it develops using diamond
Surface acoustic wave and bulk acoustic wave device can further improve the anti-interference ability of communication equipment, reduce power consumption, improve response frequency,
To improve the comprehensive performance of communication equipment.
Traditional surface acoustic wave and bulk acoustic wave device are mainly made of piezoelectric membrane, electrode, wherein electrode passes through tradition collection
At circuit technology on piezoelectric membrane by film deposition, photoetching, etch.Signal is input in a lateral electrode, through piezoelectricity
Material converts acoustic signals for microwave signal and transmits in piezoelectric membrane, then passes through inverse piezoelectric effect in another lateral electrode
Microwave signal output is converted by acoustic signals.By piezoelectric membrane appropriate and electrode design, it can make to meet specific frequency and want
The acoustic signals asked pass through, and realize resonance, filter function.Although traditional surface acoustic wave and bulk acoustic wave device can also realize that microwave is filtered
Wave energy, but have a disadvantage that needs overcome:
1, Conventional piezoelectric material sound wave loss it is larger, the sensitivity of the surface acoustic wave and bulk acoustic wave device that are made from it and
Anti-interference ability is substantially reduced.
2, using diamond/piezoelectricity/electrode multilayer structure of diamond, acoustic signals are still mainly in piezoelectric layer
It propagates, still larger, the effect of diamond performance not yet in effect is lost in sonic transmissions.
Summary of the invention
Deficiency in view of the above technology, the purpose of the utility model is to provide a kind of new type of SAW or shear wave to motivate body
Sound wave microwave device chip structure reduces transmission loss and microwave insertion loss, improves the property such as frequency and quality factor of device
Energy.
To achieve the above object, the utility model provides following scheme:
A kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure, which includes: sound table
Surface wave or shear wave excitation bulk acoustic wave microwave device chip circuit and chip basal body；
It is provided with the first groove and the second groove in the chip basal body, is filled with the first piezoresistive material in first groove
To expect, be provided with first electrode on first piezoelectric material, one end of the first electrode is connected with first piezoelectric material,
The other end of the first electrode is connected with the signal input part of the chip circuit；
It is filled with the second piezoelectric material in second groove, is provided with second electrode on second piezoelectric material, institute
The one end for stating second electrode is connected with second piezoelectric material, the letter of the other end of the second electrode and the chip circuit
Number output end is connected.
Optionally, the chip basal body material is the silicon materials of diamond or depositing diamond film.
Optionally, first groove and second groove contain multiple grooves.
Optionally, the distance between each groove is identical or different.
Optionally, the shape, size and/or depth of the groove can change.
Optionally, the shape and/or size of the first electrode and the second electrode can adjust.
Optionally, the first electrode and the second electrode are all made of conductive metal.
Optionally, the chip basal body is arranged with substrate, is used to support the chip structure.
Optionally, the first electrode is input electrode, takes spot welding lead packages, and the second electrode is output electricity
Spot welding lead packages are taken in pole.
According to specific embodiment provided by the utility model, the utility model discloses following technical effects:
The utility model proposes a kind of new type of SAW or shear wave to motivate bulk acoustic wave microwave device chip structure, the core
Chip architecture includes: surface acoustic wave or shear wave excitation bulk acoustic wave microwave device chip circuit and chip basal body, is arranged in chip basal body
There are the first groove and the second groove, the first piezoelectric material is filled in the first groove, the first electricity is provided on the first piezoelectric material
Pole, one end of first electrode are connected with the first piezoelectric material, and the other end is connected with the signal input part of chip circuit；Second groove
It is inside filled with the second piezoelectric material, second electrode, one end of second electrode and the second piezoresistive material are provided on the second piezoelectric material
Material is connected, and the other end is connected with the signal output end of chip circuit.The utility model by using groove structure Buddha's warrior attendant stone material
Material is used as main sonic transmissions medium, utilizes the highest acoustic propagation velocity of diamond and minimum acoustic loss performance to greatest extent,
The transmission loss and microwave insertion loss for reducing device, improve the performances such as frequency and the quality factor of device.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only the utility model
Some embodiments for those of ordinary skill in the art without any creative labor, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is that a kind of new type of SAW of the utility model embodiment or shear wave motivate bulk acoustic wave microwave device chip structure
Diagrammatic cross-section；
Fig. 2 is microwave device schematic illustration in the utility model embodiment；
Fig. 3 is microwave device performance chart in the utility model embodiment.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
The purpose of the utility model is to provide a kind of new type of SAW or shear wave to motivate bulk acoustic wave microwave device chip knot
Structure reduces the transmission loss and microwave insertion loss of device, improves the performances such as frequency and the quality factor of device.
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, with reference to the accompanying drawing and have
Body embodiment is described in further detail the utility model.
As shown in Figure 1, a kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure diagrammatic cross-section,
The chip structure includes: surface acoustic wave or shear wave excitation bulk acoustic wave microwave device chip circuit and chip basal body 101, the chip
It is provided with the first groove 102 and the second groove 103 on matrix 101, is filled with the first piezoelectric material in first groove 102
104, first electrode 106, one end of the first electrode 106 and first pressure are provided on first piezoelectric material 104
Electric material 104 is connected, and the other end of the first electrode 106 is connected with the signal input part of the chip circuit；Described second
It is filled with the second piezoelectric material 105 in groove 103, is provided with second electrode 107 on second piezoelectric material 105, described the
One end of two electrodes 107 is connected with second piezoelectric material 105, the other end of the second electrode 107 and chip electricity
The signal output end on road is connected.
In the present embodiment, 101 material of chip basal body is the silicon materials group of diamond or depositing diamond film
At the single basis material in surface acoustic wave and bulk acoustic wave device, 101 material of chip basal body be not limited to it is above two, also
The other materials that can be depositing diamond film make diamond as main sonic transmissions medium, reduce device
Transmission loss and microwave insertion loss, improve the performances such as frequency and the quality factor of device.
In the present embodiment, first groove 102 and second groove 103 contain multiple grooves, each groove
It is filled with piezoelectric material, and corresponding electrode is set on the piezoelectric materials.
As an alternative embodiment, the distance between each groove is identical or different, the shape of the groove
Shape, size and/or depth can change, and the shape and/or size of the first electrode 106 and the second electrode 107 can
Adjustment.By adjusting above one or more, response of the device to microwave spectrums such as different frequency, bandwidth can be realized, it is real
The various functions of existing microwave device.
As an alternative embodiment, the first electrode 106 and the second electrode 107 are all made of conductive gold
Belong to.
As an alternative embodiment, the chip basal body 101 is arranged with substrate, it is used to support the chip knot
Structure.
As an alternative embodiment, the first electrode 106 is input electrode, spot welding lead packages, institute are taken
Stating second electrode 107 is output electrode, takes spot welding lead packages, and the encapsulation of input and output electrode is not limited to a solder taul envelope
Dress can also draw microwave input and output electrode by other way, various microwave devices are made.
A kind of new type of SAW or shear wave provided in this embodiment excitation bulk acoustic wave microwave device chip structure, it can be achieved that
The function of conventional surface acoustic wave and bulk acoustic wave device meets the requirement for realizing microwave-sound wave conversion, microwave signal selection, also real
Highly sensitive and low loss is showed.And various groove shapes, piezoelectric material and electrode material are designed as needed, according to need
Ask modification design, have the characteristics that technical indicator it is excellent, it is flexible and expansible, using simplicity.The corresponding technique of this structure and big
Scale integrated circuit compatibility is compatible with the use of existing device, it can be achieved that batch production, can be applied to a variety of communication equipments.
Using diamond as matrix in the present embodiment, realizing has the diamond of excellent sound transmission characteristics
As surface acoustic wave and the prevailing transmission medium of bulk acoustic wave device, transmission loss is greatly reduced, improves device performance, which can
Standard technology is prepared with large scale integrated circuit, it can be achieved that large-scale production.
The function of each component of the present embodiment and corresponding description of the process are as follows:
1. diamond: diamond is using monocrystalline or the high-purity rank diamond platelet of polycrystalline or film, length, width and height
Size can be customized, typical sizes be 3*3*0.3mm (platelet, self-supporting) or 0.03mm (film, using other materials as matrix), it is miscellaneous
Matter N content is PPB rank, upper and lower surface roughness Ra < 10nm.It is provided for surface acoustic wave or bulk acoustic wave microwave device optimal
Acoustic Wave Propagation medium.
2. groove structure: using traditional surface acoustic wave interdigital electrode shape in the present embodiment, interdigital groove utilizes tradition half
Semiconductor process is completed by photoetching, dry etching, and about 5 microns of depth of groove, ditch profile is inverted trapezoidal.
3. piezoelectric material: it is piezoelectric material that ALN is selected in the present embodiment, can also deposit other piezoelectric materials, piezoelectric material
About film thickness is advisable with being filled up completely groove and diamond surface, passes through physical vapour deposition (PVD), chemical vapor deposition, plating
Mode or other growth patterns are capable of the growth thickness and growth quality of stability contorting piezoelectric membrane.After the completion of growth, biography is utilized
Semiconductor technology of uniting is by chemically-mechanicapolish polishing (CMP), the piezoelectric material of the non-recessed site deposition of jettisoning diamond surface, thus
Basic circuit is formed by groove.
4. circuit-forming and encapsulation: it is electrode that Al-Cu is selected in the present embodiment, can also deposit other electrode materials.Electrode
Thickness, which is subject to, to be designed, and generally about 2 microns, by physical vapour deposition (PVD), plating mode or other growth patterns, can stablize control
The growth thickness and growth quality of electrode film processed, after the completion of growth, using conventional semiconductor processing by photoetching, dry etching, only
Retain electrode on the piezoelectric materials, to form electrode.Physical circuit can be defeated according to practical devices mode and frequency self-defining
Entering output electrode can be drawn by spot welding extraction, encapsulation or other means.
It, can by adjusting piezoelectricity/electrode material composition, the geomery of groove and depth of groove, electrode shape size
Form the surface acoustic wave and bulk acoustic wave device of different mode and frequency.
5. microwave device performance curve
Using common microwave designing, simulation softward and microwave test instrument, to surface acoustic wave in the present embodiment and bulk acoustic wave
Device is simulated and is tested, and Fig. 3 is microwave device performance chart in embodiment, as shown in figure 3, centre frequency is
1.75GHz, bandwidth 0.05GHz.
The S21 (transmission coefficient) of filter is shown in positive " n " shape curve, and microwave is transmitted to the electricity of output end from input terminal
Pressure ratio value shows that microwave signal can pass completely through, is lower than close to 0dB (logarithmic mode, ratio 1) near intermediate 1.75GHz
Or it is remarkably decreased higher than the microwave signal S21 of band connection frequency to -50dB and following, hence it is evident that inhibit, show that microwave signal can not lead to
It crosses.
The S11 (self-reflection coefficient) of filter is shown in " n " shape curve, there is more fluctuating in passband, and microwave is from defeated
Enter the voltage ratio that end input back reflection returns input terminal, maximum value is less than -10dB in passband, shows in passband almost without letter
Number reflex to input terminal；Microwave signal S11 below or above band connection frequency is 0 (logarithmic mode, ratio 1), shows signal
All it is reflected back input terminal.
The principle of microwave device in the present embodiment:
Fig. 2 is the utility model embodiment microwave device schematic illustration, as shown in Fig. 2, microwave signal passes through input
IDT (input piezoelectricity/telegraph circuit) 201 conduction to the piezoelectric material under electrode, have motivated corresponding frequencies by inverse piezoelectric effect
Surface acoustic wave (SAW), width corresponds to corresponding resonance frequency, several pairs of same widths between certain recess width and each groove
The corresponding electrode of groove between can form resonance, inputIDT (input piezoelectricity/telegraph circuit) 201 generates fixed frequency sound surface
Wave is transmitted to output IDT (output piezoelectricity/telegraph circuit) 202 by diamond, by piezoelectric effect, only this frequency
The sound wave of rate can be realized resonance and motivate the electromagnetic wave of corresponding frequencies, and pass through output IDT (output piezoelectricity/electrode electricity
Road) 202 this electromagnetic wave is exported, to realize microwave filtering.
Specific case used herein is expounded the principles of the present invention and embodiment, above embodiments
Explanation be merely used to help understand the method and its core concept of the utility model；Meanwhile for the general technology of this field
Personnel, based on the idea of the present invention, there will be changes in the specific implementation manner and application range.In conclusion
The content of the present specification should not be construed as a limitation of the present invention.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822082080.6U CN209017001U (en) | 2018-12-12 | 2018-12-12 | Chip structure of a novel surface acoustic wave or shear wave excited bulk acoustic wave microwave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822082080.6U CN209017001U (en) | 2018-12-12 | 2018-12-12 | Chip structure of a novel surface acoustic wave or shear wave excited bulk acoustic wave microwave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209017001U true CN209017001U (en) | 2019-06-21 |
Family
ID=66843874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822082080.6U Active CN209017001U (en) | 2018-12-12 | 2018-12-12 | Chip structure of a novel surface acoustic wave or shear wave excited bulk acoustic wave microwave device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209017001U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109412548A (en) * | 2018-12-12 | 2019-03-01 | 中国科学院电工研究所 | A kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure |
| US20220109426A1 (en) * | 2020-10-05 | 2022-04-07 | Resonant Inc. | Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband |
| US20220109423A1 (en) * | 2020-10-05 | 2022-04-07 | Resonant Inc. | Transversely-excited film bulk acoustic resonator matrix filters with input and output impedances matched to radio frequency front end elements |
| US11863160B2 (en) | 2020-10-05 | 2024-01-02 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator matrix filters with split die sub-filters |
| US11955951B2 (en) | 2020-10-05 | 2024-04-09 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator matrix filters with switches in parallel with sub-filter shunt capacitors |
| US12451864B2 (en) | 2021-09-29 | 2025-10-21 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with curved shaped ends of fingers or opposing busbars |
| US12456962B2 (en) | 2021-09-24 | 2025-10-28 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators wafer-level packaging using a dielectric cover |
| US12489421B2 (en) | 2021-02-03 | 2025-12-02 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with multi-mark, multi-pitch interdigital transducer |
-
2018
- 2018-12-12 CN CN201822082080.6U patent/CN209017001U/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109412548A (en) * | 2018-12-12 | 2019-03-01 | 中国科学院电工研究所 | A kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure |
| CN109412548B (en) * | 2018-12-12 | 2024-12-31 | 中国科学院电工研究所 | A novel chip structure of surface acoustic wave or shear wave excited bulk acoustic wave microwave device |
| US20220109426A1 (en) * | 2020-10-05 | 2022-04-07 | Resonant Inc. | Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband |
| US20220109423A1 (en) * | 2020-10-05 | 2022-04-07 | Resonant Inc. | Transversely-excited film bulk acoustic resonator matrix filters with input and output impedances matched to radio frequency front end elements |
| US11658639B2 (en) * | 2020-10-05 | 2023-05-23 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband |
| US11863160B2 (en) | 2020-10-05 | 2024-01-02 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator matrix filters with split die sub-filters |
| US11901877B2 (en) | 2020-10-05 | 2024-02-13 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband |
| US11929733B2 (en) * | 2020-10-05 | 2024-03-12 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator matrix filters with input and output impedances matched to radio frequency front end elements |
| US11955951B2 (en) | 2020-10-05 | 2024-04-09 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator matrix filters with switches in parallel with sub-filter shunt capacitors |
| US12489421B2 (en) | 2021-02-03 | 2025-12-02 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with multi-mark, multi-pitch interdigital transducer |
| US12456962B2 (en) | 2021-09-24 | 2025-10-28 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators wafer-level packaging using a dielectric cover |
| US12451864B2 (en) | 2021-09-29 | 2025-10-21 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with curved shaped ends of fingers or opposing busbars |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209017001U (en) | Chip structure of a novel surface acoustic wave or shear wave excited bulk acoustic wave microwave device | |
| TWI734153B (en) | Resonant cavity surface acoustic wave (saw) filters | |
| CN101860342B (en) | SAW (Surface Acoustic Wave) device of bus bar doubled as reflecting grating type IDT (Interdigital Transducer) structure | |
| CN109004914A (en) | A kind of SAW device and preparation method thereof | |
| CN103929149B (en) | Flexible piezoelectric film bulk acoustic wave resonator and manufacturing method thereof | |
| CN111010127B (en) | A thin-film bulk acoustic wave resonator and its preparation method | |
| CN113452339A (en) | Piezoelectric film bulk acoustic resonator | |
| WO2021102640A1 (en) | Acoustic wave device and fabrication method therefor | |
| CN101316099B (en) | Double-channel SAW filter | |
| CN109412548A (en) | A kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure | |
| CN109245742A (en) | One kind combining resonator based on surface acoustic wave and solid reflecting layer film bulk acoustic | |
| CN106921363A (en) | A Thin Film Bulk Acoustic Resonator | |
| CN208353309U (en) | A kind of bandwidth varying surface acoustic wave broadband filter | |
| WO2024002237A1 (en) | Surface acoustic wave resonator, filter, and communication device | |
| CN1614886A (en) | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor | |
| CN111342803A (en) | Film bulk acoustic resonator | |
| CN115567025A (en) | Multilayer structure spurious response free SH type surface acoustic wave filter | |
| CN103312292B (en) | The partition method of acoustic-electric coupling between single-chip integration multiple Surface Acoustic Wave Filter | |
| CN209562521U (en) | A Surface Acoustic Wave Device Based on Diamond Material Matrix | |
| CN111490742A (en) | Resonator structure and manufacturing method thereof | |
| CN216959822U (en) | Single crystal film bulk acoustic resonator and electronic element | |
| JP3387028B2 (en) | Surface acoustic wave device | |
| CN201490985U (en) | Three-channel surface acoustic wave filter | |
| CN215418219U (en) | Surface acoustic wave filter with non-continuous substrate structure | |
| CN110166019B (en) | A surface acoustic wave device based on diamond material matrix |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Institute of electrical engineering, Chinese Academy of Sciences, no.6, Beiertiao, Zhongguancun, Haidian District, Beijing Patentee after: INSTITUTE OF ELECTRICAL ENGINEERING, CHINESE ACADEMY OF SCIENCES Patentee after: Henan kezhicheng third generation semiconductor carbon chip Co.,Ltd. Address before: Institute of electrical engineering, Chinese Academy of Sciences, no.6, Beiertiao, Zhongguancun, Haidian District, Beijing Patentee before: INSTITUTE OF ELECTRICAL ENGINEERING, CHINESE ACADEMY OF SCIENCES Patentee before: ZHENGZHOU KEZHICHENG MACHINE TOOL Co.,Ltd. |