CN1977159A - Method for manipulating microscopic particles and analyzing the composition thereof - Google Patents

Abstract

We disclose a method for analyzing the composition of a microscopic particle resting on a first sample surface. The method comprises positioning a micro-manipulator probe near the particle; attaching the particle to the probe; moving the probe and the attached particle away from the first sample surface; positioning the particle on a second sample surface; and, analyzing the composition of the particle on the second sample surface by energy-dispersive X-ray analysis or detection of Auger electrons. The second surface has a reduced or non-interfering background signal during analysis relative to the background signal of the first surface. We also disclose methods for adjusting the electrostatic forces and DC potentials between the probe, the particle, and the sample surfaces to effect removal of the particle, and its transfer and relocation to the second sample surface.

Description

Methods for handling tiny particles and analyzing their composition

technical field

The present invention relates to a method for removing and analyzing microscopic particles from the surface of a sample, especially a semiconductor sample.

Background technique

In the production process of the semiconductor industry, the inevitable particle pollution will reduce the yield. As the semiconductor industry has been concentrating on dramatically reducing the feature size of patterned linewidths, the minimum particle size that degrades performance has also rapidly decreased. It is generally believed that a reasonable estimate of the size of a "fatal defect" on a semiconductor wafer should be greater than one third of the smallest feature size.

Although semiconductor manufacturing takes place in cleanrooms with stringent particle standards, contamination is unavoidable due to movement of objects, people entering and exiting, gas condensation, and room aging. Controlling and removing these particles is an ongoing process. In most cases, particle removal can only be improved by knowing the source. Many particles or defects are too small to be found with ordinary optical inspection microscopes, thus requiring higher resolution methods such as Scanning Electron Microscopy (SAM), Transmission Electron Microscopy (TEM), Scanning Auger Microprobe (SAM ), or charged particle microscopes such as focused ion beam instruments.

Images of particles alone often fail to locate the source of the particles, and more information is needed. Basic components have high application value in the process of identifying defects. There are a number of ways to do this using the charged particle microscope described above. However, most analytical methods are limited by the background signal surrounding the particle.

Throughput is also a key factor in semiconductor manufacturing. Existing methods for analyzing the composition of particles on semiconductor wafers typically require the wafers to be removed from the production line and then analyzed offline using the methods described below, which greatly reduces throughput.

Particle identification on the surface of a sample using an electron beam is complicated by variations in the relative size relationship of the particle to the electron penetration depth, as well as by differences in the properties of the surrounding materials in the sample. As the electron beam interacts with the bulk of solid material, it diverges and fills the droplet-like space, losing energy. The primary beam interacts with the atoms in this space, producing low-energy Auger electrons and X-rays characteristic of that element.

The X-rays produced depend on the atomic number of the element, the energy of the electrons involved, and other factors. When using traditional energy-dispersive X-ray spectrophotometry (EDS) to identify unknown particles, the energy of the electron beam must be large enough to generate inner-shell X-rays on all possible elements of interest. For the semiconductor industry, This may contain high atomic number elements such as tungsten. However, this energy may cause the penetration depth to be much greater than the particle to be identified, so that X-rays are generated at the sample surface. These X-rays interfere with the signal emanating from the particles, making unique identification of the particle material very difficult. Traditional solutions include resolving X-rays of different elements or lowering the energy of the excited electron beam.

For example, measuring the intensity and diffraction angle of X-ray diffraction by reference crystals or wavelength-dispersive X-ray spectroscopy (WDS) can detect and analyze X-rays generated by electron beams in particles. The interatomic spacing of the crystal is chosen to deflect (with high resolution) X-rays of a given energy, allowing the X-rays of different elements to be separated. This method has higher energy resolution than EDS, but its yield is lower. In addition, in most cases, the particles may have the same composition as the sample surface, so this method cannot uniquely determine the composition of the particles.

Other methods include reducing the energy of the primary electron beam to ensure that the volume of activation is smaller than the volume of the particle being detected. The reduction in primary electron beam energy results in characteristic X-rays with lower energy (M or L shell X-rays instead of K shell). Conventional cooled semiconductor-based detectors generate and collect electron-hole pairs to measure ionizing radiation energy (a few eV per electron-hole pair, depending on the detector material). Reducing the energy of the X-rays reduces the number of hole pairs, resulting in reduced sensitivity to particulate materials. In addition, the resolution of these detectors is determined by the statistics of the electron-hole generation process, and reducing the energy of the detected X-rays often leads to ambiguous identification of the detected elements. Existing techniques use X-ray microcalorimetry methods to detect these weak X-ray signals, measuring the heat transferred to the detector rather than the electron-hole pairs generated. This method can measure very low X-ray energies, but microcalorimeters are expensive, require complex cooling, and are slow compared to other methods. Also, the electron beam must be smaller than the smallest particle size to be detected, so detection of small, asymmetric particles is practically impossible with this method.

Scanning Auger microprobe analysis also uses an electron beam to irradiate the probed particles, but instead of detecting the X-rays produced, it detects the Auger electrons emitted by the atoms of the material. These Auger electrons are emitted from the outer shell and have relatively low energy. The Auger electron energy from the material produces a pattern that characterizes each element in the material, and the Auger transition morphology and precise energy provide chemical binding information (such as phase and composition information) of the elements in the material. The escape depth of these electrons is very small (a few nanometers), so Auger analysis is mainly used to analyze the surface of the sample. This is beneficial for the analysis of smaller diameter particles (<10 nm). If you want to analyze larger particles, you can use ion beam sputtering to penetrate the particles to generate depth distribution and measure periodically, but due to the ion grinding effect in SAM, it will inevitably cause damage to the surrounding samples, and it requires Background analysis is performed on the sample surrounding the particle location. For light elements, Auger analysis is generally more sensitive than standard EDS analysis, making it more suitable for identifying organic materials. However, in order to increase the statistical accuracy, it is usually necessary to use high beam currents. This will amplify the effects of thermomechanical drift and sample charge drift. This means that operating the SAM in 'spot mode', with the electron beam on the particle, runs the risk of the electron beam spot drifting onto the sample surrounding the particle over time. In order for the electron beam to stay on the particle, a raster pattern using the electron beam is more resistant to drift, but signals from surrounding materials can significantly contaminate the result. In any case, background contamination of Auger analysis results is a serious problem requiring Auger analysis of surrounding material to uniquely identify signals from particles. Background analysis will reduce yield and damage samples.

TEM is commonly used to analyze particles on or within surfaces. There are many ways to isolate particles for analysis, including duplicating, lifting, or transecting the area being probed. These methods destroy the sample surface and are performed off-line, thereby increasing cost and cycle time.

Whether using EDS or Auger analysis for elemental identification, moving particles from the surface of the first sample to a more easily controlled environment for testing can greatly improve the chances of success and yield. A key part of this process is the method of moving the particles. The present invention discloses a novel method by which the particles to be detected can be removed from the sample surface and transported to a second sample surface with a controlled X-ray or Auger background, where the above mentioned Various methods for electron beam induced X-ray or Auger electron analysis. This would not require high spatial resolution analytical techniques, however, techniques with high spatial resolution such as EDS analysis used in SEM and SAM analysis are usually preferred. Non-high spatial resolution techniques that can be successfully applied to the analysis of particles on a reduced or non-interfering background include, for example, X-ray photoelectron spectroscopy (XPS) and X-ray fluorescence analysis (XRF), which are uniquely defined in situation is very beneficial.

This method for particle processing and EDS X-ray analysis can be performed in-line on existing wafer fabrication equipment. The in-line process using existing manufacturing and testing equipment greatly reduces the cycle time for contaminant removal. SEM is a conventional method for wafer inspection, and analysis methods using electron beams in SEM systems increase throughput compared to off-line analysis.

Although this invention primarily describes the use of new methods for handling and detecting particles that become pollutants in semiconductor manufacturing processes, readers should note that the term "particles" here also includes substances that are not pollutants in other contexts, such as Chemical deposits, biological materials or micromechanical mechanisms. In the latter case, the new method of processing described in this application can be used to treat these substances, often for purposes other than electron beam X-ray or Auger electron analysis.

Description of drawings

Figure 1 shows the steps of attaching a particle to a micromanipulator probe and moving the particle to a second surface for analysis.

Figure 2 shows three other methods of attaching particles to micromanipulator probes.

Figure 3 shows the process of bombardment with polarizable particles to change the electrostatic force.

Figure 4 is a method for simultaneously observing a particle and changing the charge state of the particle.

Figure 5 shows several methods for immobilizing particles to a second surface for analysis.

Figure 6 is a process of analyzing particles while immobilizing them on the micromanipulator probe tip.

Fig. 7 is a process of analyzing particle components moved to a second surface for analysis.

Contents of the invention

The invention discloses a method for analyzing the composition of tiny particles fixed on the surface of a first sample. Typically, particles are a contaminant in semiconductor production systems, and this method is not limited to use in that environment. The method includes placing a micromanipulator probe near a particle; attaching the particle to the probe; removing the probe and attached particle from a first sample surface; placing the particle on a second sample surface; Energy dispersive X-ray methods, Auger microprobe analysis, or other suitable analytical techniques are used to analyze the composition of the particles on the surface of the second sample. During analysis, the second surface has a reduced or non-interfering background signal relative to the background signal of the first surface (the applicant refers to the reduced or non-interfering background signal as a "controlled" background in the claims). Signal). The present application also discloses a method of modulating the electrostatic force and DC voltage between the probe, particle and sample surface, whereby the particle can be removed, transported to a second sample surface, and repositioned thereon. This includes tuning electrostatic forces to create attractive forces between probes and particles. Adjusting the electrostatic force involves locally adjusting the energy or intensity of the electron beam, ion beam, or photon beam (intensity refers to the beam current of the electron or ion beam) incident on individual components in the sample system to generate electrostatic force between the particle and the probe tip Attractive, or electrostatic repulsive forces are created between the particle and the first sample surface, these components include the probe tip, the particle and the first sample surface. This process is reversed for transporting particles from the probe tip to the second sample surface.

The second sample surface may also be the probe tip itself. In this case, the probe tip consists of a controlled background material. Since these tiny particles may also transmit the energy beam, or scatter the energy beam to the underlying surface, it is necessary to convert the particle-attached probe tip to a surface composed of a controlled material, or to make this controlled background The material is located under the probe tip to which the particle is attached. Herein, "lower side" refers to the side of the particle opposite to the side on which the energy beam is incident (ie, the transmission side).

Detailed ways

Semiconductor manufacturing typically uses scanning electron microscopes (SEM), focused ion beam (FIB) instruments, or scanning Auger microprobes (SAM) to analyze tiny particles. FIB instruments are available in single-beam or dual-beam (SEM and ion beam) modes. Commonly used FIB instruments are manufactured by FEI Corporation of Hillsboro, Oregon, and there are several models of 200, 235, 820, 830 and 835. The probe 120 mentioned below is a component of the micromanipulator connected to the FIB instrument with vacuum feedthrough. A conventional such micromanipulator is the Model 100 micromanipulator manufactured by Omniprobe Corporation of Dallas, Texas. Typical SAM instruments include Peabody, JAMP-7810 and JAMP-7830F manufactured by JEOL USA, Inc. of Massachusetts.

Figure 1 depicts a common setup for handling and analyzing particles. FIG. 1A shows a particle 100 to be detected resting on a first sample surface 110 . The micromanipulator probe 120 is located near the particle 100 . The probe tip may be electrostatically charged relative to the particle and the first sample surface. Alternatively, a voltage source 130 may be connected between the probe 120 and the first sample surface 110 . Irradiating particles with a charged particle beam can change the local electrostatic charge on the particle. Figures 1B to 1D illustrate, respectively, irradiating a particle 100 and a first sample surface 110 with a photon or charged particle beam 140 to attach the particle 100 to a probe 120, and to remove the probe 120 and the particle 100 attached thereto from the first sample surface 110. One sample surface 110 is removed, and particles 100 are deposited onto a second sample surface 150 for analysis. The figures are not drawn to scale.

Attach particles to probes

Particles in a vacuum have strong electrostatic forces. Due to the presence of electrostatic charges on the particle 100 and the probe 120, an image charge is generated on the opposing surfaces. The forces generated by these image charges are proportional to the exposed area and inversely proportional to the distance between objects. Reducing or increasing the exposed area will reduce or increase the force acting on the particle 100 , which ultimately affects the adhesion between the probe 120 and the particle 100 . Using this method, the particle to be detected can be directly removed from the sample by means of the conductive or insulating probe 120 . A conductive probe has the additional function of introducing a static or time-varying voltage or electrostatic charge from a voltage source or electrostatic charge source 130 to the probe 120, as shown in FIG. 1A.

The shape of the tip of the probe 120 also affects the electric field at the tip. The electrostatic charge on a blunt tip has a greater effect on particles aligned with that tip than on a sharp tip. Conversely, with a DC voltage across a conductive tip, a sharp tip produces the strongest electric field at that tip. For example, when imaging with electron beam 140 of a FIB instrument, probe 120 can be moved in close proximity to particle 100, as shown in FIG. 1B. The electron beam can also affect the charge distribution in the surface-particle-probe system and thus can help attach the particle 100 to the probe 120 . Applications of this effect are discussed below. The electron beam 140 shown in FIG. 1B and other figures should be understood to also be a charged particle beam or a photon beam, possibly including an ion beam. These beams, as well as photon beams emitted from lasers, are referred to herein as "energy" beams in the claims section.

In general, adjusting the electrostatic forces in the system includes adjusting the energy of the electron beam 140 incident on the particle 100, the probe 120, and the first surface 110 to establish a relative electrostatic attraction between the particle 100 and the probe 120, and A relative electrostatic repulsion is formed between the particle 100 and the first sample surface 110 . This process can be accomplished with the assistance of a voltage source 130 connected between the first sample surface 110 and the probe 120 . Obviously, the collision beam 140 can also be a photon beam, which has enough energy to release photoelectrons, which can change the charge distribution and electrostatic force in the system.

This preferred embodiment can also be implemented using an adhesive 160 on the probe 120, as shown in Figure 2A. A suitable adhesive 160 may be any substance with a low vapor pressure, such as vacuum grease, low melting point wax, or other low vapor pressure glue. In this case, the adhesive forces only capture the particles 100 despite the presence of electrostatic forces.

As shown in FIG. 2B , in another embodiment, tweezers 170 attached to probe 120 grab particle 100 and move it away from first sample surface 110 . MEMS Precision Instruments of Berkeley, CA produces suitable devices with tweezers 170 and similar clips.

The probe 120 can touch the particle 100, but in most cases this is not necessary because the particle 100 will jump to the probe 120 due to the electrostatic attraction. The electrostatic field is governed by the surface area and a blunt tip on the probe 120 or the blunt edge of the particle 100 or probe 120 can enhance its effect, while a sharp tip that concentrates the electric field lines can enhance the effect of the DC potential. 2C and 2D illustrate that by controlling the surface area of the particle 100 exposed to the manipulator, by applying the tip 125 of the probe 120 and the edge 135 of the probe 120 to the particle 100 to obtain the desired movement of the particle 100, A method of attaching and transporting particles 100.

Yet another method of adjusting the electrostatic field in the particle-probe-surface system to attach and move the particle 100 involves depositing a conductive material onto the first sample surface 110 or the second sample surface 150, where In this case, the electrostatic charge on the surface on which the particles are located is distributed and adjusted to produce the desired attractive or repulsive forces acting on the particles. FIG. 3A shows the deposition of polarizable particles 250 (eg, water) on the sample surface 11 . Figure 3B shows the deposition of a conductive film 255 by evaporation of the source. FIG. 3C shows a direct jet 240 of gas 245 onto the surface 110 to which particles 100 are attached. The gas 245 is broken down by the energy beam 140, which may be an electron beam, ion beam, or photon beam from a laser.

FIG. 4 is a method for simultaneously observing particles 100 and adjusting the charge state of the particles in a vacuum system. In a typical FIB instrument, the SEM beam and ion beam scan the object to be probed in a raster pattern 260 . Secondary electrons are emitted while scanning, generating an electrical signal that is displayed to the operator of the device in the form of an image. Since the scanning beam inevitably contains charged particles and causes the sample to emit charged particles, such as secondary electrons, it can itself be used to change the charge state of the particle 100 . FIB instruments typically use a digital scan generator that digitally increases the position of the beam spot via a raster pattern, one line at a time, usually reversing between lines, to eliminate the retrace after each line characteristic of conventional analog scanners. So the operator or the computer program controlling the scan can determine the dwell time at each pixel. For example, the program can set the mask on the particle (or the precise particle profile) to zero dwell time, and scan directly through it. Either dwell time can be set to a maximum time determined by the line frequency to avoid image distortion in a single scan. It is also possible to scan alternately around the cover and then scan inside the cover with different parameters, this action is fast and the human eye cannot see the interruption.

FIG. 4 shows the steps of raster scanning a primary electron beam 270 over an apparent electric field including a particle 100, generating and detecting secondary electrons 280 synchronized with the primary electron beam 270, changing the raster scan pattern 260 to specify the time between the electrons to be combined and The dwell time and position of a particular pixel in the grating 260 field associated with the particle 100 is added to the standard raster map. When parked with the grating 260 , the particle 100 experiences an excessive or reduced negative charge relative to the sample surface 150 . In this way, the electrostatic field between the particle 100, the probe 120 and the sample surface 150 can be adjusted to obtain a desired attractive or repulsive force. Gratings must be produced in the same way by ion beams or scanning lasers.

Teleportation Particles

Once the particles 100 are attached to the probe 120 in the manner described above, the probe 120 can be moved in a vacuum environment either manually or with automated probe 120 components. Alternatively, the probe 120 can be gently raised or retracted, and the sample stage can be moved to bring controlled background material under the probe 120 .

The probe 120 can also be used to deliver the particle 100 to a second sample surface 150 consisting of a controlled background material with low or no interfering background signal. When analyzed by EDS, low atomic number materials, such as carbon and beryllium, will generate low-energy X-rays that do not interfere with the analysis process of most inorganic particles. Preferably atomic number less than or equal to 12. Organic particles obviously require an inorganic background material. Examples of low-background materials for the second sample surface 150 include photoresists, carbon flat plates, beryllium foils, conductive carbon-based pastes (colloidal graphite suspensions), polymer films, or carbon tube needles. Any material for which the X-ray background does not interfere with typical materials during fabrication can be used for the second sample surface 150 . In some cases, second sample surface 150 may be a different portion of first sample surface 110 . In other cases, the material of the second sample surface 150 should have a different background signal than that expected from the particle 100 if the partial composition of the particle 100 is known or can be guessed. Care must be taken to prevent the second sample surface 150 from masking possible signals from contaminants external to the fabrication facility, such as inhaled gases or impurities in chemicals. When performing Auger analysis on particles on a second surface, the second surface should consist of a low Auger background or a non-interfering Auger background. The composition of the second surface should have a consistent depth greater than the depth of any depth profile detection to be performed on the particle. The material of the second surface should be thermally and electrically conductive to minimize charging or thermomechanical drift issues due to high beam currents, but is not required. Pre-sputtering the second surface before delivering the particles will remove the original surface coating (mainly carbon and oxygen) and simplify the analysis. This pre-sputtering can be performed with a depth-distributed ion source in an Auger or an ion beam in a FIB. The well-known composition of the second surface eliminates background analysis and improves throughput.

Figure 5 illustrates several methods of transporting attached particles 100 from probe 120 to second sample surface 150 for analysis. FIG. 5A shows particles suspended on the lower frame 190 , thinner than the penetration depth of the analysis beam 140 . Frame 190 is typically a TEM grid, possibly with a polymer film 195 such as FORVAR passing through the openings of the grid.

FIG. 5B shows particles attached thereto with adhesive 200 on the second sample surface 150 . FIG. 5C shows a second sample surface 150 composed of a low elastic modulus background material 210 such as vacuum grease, low melting point wax, or low polymer. In this case, the particles 100 can be pushed into the low modulus material 210 and stick there.

FIG. 5D is a corrugated surface 220 on the insulating second sample surface 150 . The corrugated surface 220 can increase the contact area of the particle 100 with the second sample surface 150, thereby changing the electrostatic force between them.

FIG. 5E is a charge pattern 230 written on the second sample surface 150 by the charged particle beam 140 . The patterned electrostatic field facilitates transport of particles from the probe 120 onto the second sample surface 150 .

Figure 5F is a second sample surface 150 having a plurality of holes or apertures. Such surfaces may be microporous filters such as the MICROPORE series of filters manufactured by 3M Corporation of St. Paul, Minnesota, or glass fiber filters such as the FILTRETE or EMPORE series of filters manufactured by 3M Corporation of St. Paul, Minnesota Detectors, or "porous carbon" films, such as the QUANTIFOIL series, are manufactured by Structure Probe, Inc of West Chester, PA. An advantage of these surfaces is that particles 100 can be static or electrostatically trapped within the pores or pores of these surfaces and held stationary for analysis.

In some cases, it may be desirable to find localized areas of high electrostatic field sufficient to remove the particle 100 from the probe 120 without contact (if desired).

Of course, the above-described method of adjusting the electrostatic force to attach the particle 100 to the probe 120 in the particle-probe-sample surface system can also be used to remove the particle 100 from the probe 120 and attach it to a second sample surface. on the sample surface 150. In particular, voltage or charge source 130 can be enabled, such as by rapidly switching negative charge from a capacitor stored by probe 120, or by applying a time-varying voltage, such as a square wave or pulse, from charge source 130 to probe 120. produce rapid transitions or resonance phenomena.

Analyzing particles

X-ray analysis or Auger analysis can analyze the particle 100 directly on the probe tip 125, as shown in FIG. Of course, this would generate X-rays or Auger electrons from the probe tip 120 itself. A low-background or non-interfering background material can be used as the material for the probe tip, as described above, by placing the low-background or non-interfering background material under the probe 120 during analysis, or by placing the platform and all other materials in the vicinity of the probe 120. The components are all lowered to reduce other interfering signals. The analysis of the particle 100 has already been completed, so the particle 100 can be destructively removed after this step. There are many destructive methods, such as inserting the probe 120 into some type of plasma cleaner, rubbing off the particle 100 in a mechanical structure such as a V-groove, optically illuminating the probe after exposure in vacuum or to the atmosphere, Or melt pellets 100.

However, the particles 100 are usually analyzed on the second sample surface 150, as shown in FIG. Compositional analysis was performed by any of the methods described. In the claims section, the term "emission" refers to Auger electrons or X-rays.

Particle Analysis at the Probe Tip

The second sample 150 surface may also be the probe tip 135 itself. In this case, the probe tip 135 consists of a controlled background material. When using an analytical instrument such as SAM or FIB in which surface ion beam milling can be performed, ion beam milling is performed on the surface of probe tip 135 before attaching particle 100 to tip 135, which can reduce the original surface coating and probe Signal from the residue on the surface of the needle tip 135. Since tiny particles can also transmit the energy beam 140, or scatter the energy beam 140 onto the underlying surface, it is necessary to switch the probe tip 135 with the particle 100 attached to the surface consisting of a controlled background material, Or this controlled background surface is shifted under the probe tip 135 to which the particle 100 is attached. Herein, "lower side" refers to the side of the particle 100 opposite to the side on which the energy beam 140 is incident (ie, the transmission side).

Since modifications of the specific embodiments described above will occur to those skilled in the art, our claims cover such modifications and their equivalents.

Claims (65)

1. the method for an analysing particulates composition, described particle stays in first sample surfaces; Said method comprising the steps of:

The narishige probe is positioned near the particle, and described probe has the tip;

Particle is attached on the described probe tip;

Probe and accompanying particle are removed from first sample surfaces;

Second sample surfaces is removed and be sent to particle from probe tip; And

Analyze the composition of the particle on second sample surfaces;

Wherein, the background signal of relative first surface, second sample surfaces has in check background signal in analytic process.

2. method according to claim 1 is characterized in that described method is implemented in atmospheric environment.

3. method according to claim 1 is characterized in that described method is implemented in vacuum environment.

4. method according to claim 1 is characterized in that, makes particle be adsorbed, move or take off in electron beam irradiation particle.

5. method according to claim 1 is characterized in that, makes particle be adsorbed, move or take off in the ion beam irradiation particle.

6. method according to claim 1 is characterized in that, makes particle be adsorbed, move or take off in photon beam irradiation particle.

7. method according to claim 1 is characterized in that, described second sample surfaces is the part of first sample surfaces.

8. method according to claim 1 is characterized in that, the step that probe and accompanying particle are removed from first sample surfaces also comprises:

The position of stationary probe;

Move first sample surfaces with respect to fixing probe, so that make first sample surfaces and probe and accompanying particle separation.

9. method according to claim 1 is characterized in that, described second sample surfaces comprises that atomic number is less than or equal to 12 material.

10. method according to claim 1 is characterized in that, described second sample surfaces comprises the different material of signal that its background signal and expection are produced by grain size analysis.

11. method according to claim 1 is characterized in that, the described step that particle is attached to probe tip comprises adjustment electrostatic force, so that produce attractive force between probe and particle.

12. method according to claim 11 is characterized in that, the step of described adjustment electrostatic force also comprises:

The energy of the energy beam on the particle is incided in adjustment, makes particle, first sample surfaces and probe tip have static charge, so that produce electrostatic attraction between particle and probe tip, and produces electrostatic repulsion forces between first sample surfaces and particle.

13. method according to claim 11 is characterized in that, described energy beam is an electron beam.

14. method according to claim 11 is characterized in that, described energy beam is an ion beam.

15. method according to claim 11 is characterized in that, described energy beam comprises photon.

16. method according to claim 11 is characterized in that, the step of described adjustment electrostatic force also comprises:

Make particle have static charge;

Depositing conductive material on first sample surfaces is with in the residing position distribution of particle and change static charge on first sample surfaces.

17. method according to claim 16 is characterized in that, the described conductive material that is deposited on first sample surfaces comprises polarizable particulate.

18. method according to claim 16 is characterized in that, is deposited on the conductive film of described conductive material for evaporating on first sample surfaces.

19. method according to claim 16 is characterized in that, described on first sample surfaces step of depositing conductive material comprise that the direct jet with gas bombards first sample surfaces, and use the energy beam decomposition gas.

20. method according to claim 19 is characterized in that, described energy beam is an electron beam.

21. method according to claim 19 is characterized in that, described energy beam is an ion beam.

22. method according to claim 19 is characterized in that, described energy beam comprises photon.

23. method according to claim 11 is characterized in that, the step of described adjustment electrostatic force also comprises:

Comprising energy beam of raster scanning on the visual field of particle;

Raster scanning is programmed to have the predetermined residence time and position so that particle has static charge, and wherein said position comprises the position of particle.

24. method according to claim 23 is characterized in that, described energy beam is an electron beam.

25. method according to claim 23 is characterized in that, described energy beam is an ion beam.

26. method according to claim 23 is characterized in that, described energy beam comprises photon.

27. method according to claim 11 is characterized in that, the step of described adjustment electrostatic force comprises: tip by making probe or limit act on controls the surface area that particle is exposed to probe on the particle, thereby obtains adhering to of particle and probe.

28. method according to claim 1 is characterized in that, the described step that particle is attached on the probe tip comprises the Dc bias of adjusting between the probe and first sample surfaces.

29. method according to claim 1 is characterized in that, describedly particle is attached to step on the probe tip comprises with tweezers and catches particle.

30. method according to claim 1 is characterized in that, the described step that particle is attached on the probe tip is included in probe tip use bonding agent.

31. method according to claim 1 is characterized in that, the described step that second sample surfaces was removed and moved to particle from probe comprises the Dc bias of adjusting between the probe and second sample surfaces.

32. method according to claim 1 is characterized in that, the described step that second sample surfaces was removed and moved to particle from probe is included in probe and applies time dependent voltage.

33. method according to claim 32 is characterized in that, described time dependent voltage is a pulse.

34. method according to claim 32 is characterized in that, described time dependent voltage is by being produced by the negative charge of the quick conversion of probe from the storage of capacitor.

35. method according to claim 32 is characterized in that, described time dependent voltage is sinusoidal voltage.

36. method according to claim 1 is characterized in that, the described step that second sample surfaces was removed and moved to particle from probe comprises that adjustment electrostatic force is to produce repulsive force between probe and particle.

37. method according to claim 36 is characterized in that, the step of described adjustment electrostatic force also comprises:

Adjustment is incident on the energy of the energy beam on the particle, makes particle, second sample surfaces and probe tip static electrification lotus, so that produce electrostatic repulsion forces between particle and probe tip, and produces electrostatic attraction between second sample surfaces and particle.

38., it is characterized in that described energy beam is an electron beam according to the described method of claim 37.

39., it is characterized in that described energy beam is an ion beam according to the described method of claim 37.

40., it is characterized in that described energy beam comprises photon according to the described method of claim 37.

41. method according to claim 36 is characterized in that, the step of described adjustment electrostatic force comprises that also particle has static charge; And depositing conductive material on second sample surfaces is to distribute on the particle position and to change electric charge on second sample surfaces.

42., it is characterized in that the described conductive material that is deposited on second sample surfaces comprises polarizable particulate according to the described method of claim 41.

43. according to the described method of claim 41, it is characterized in that, be deposited on the conductive film of described conductive material on second sample surfaces for evaporating.

44. according to the described method of claim 41, it is characterized in that, described on second sample surfaces step of depositing conductive material comprise that the direct jet with gas bombards second sample surfaces, and decompose this gas with energy beam.

45., it is characterized in that described energy beam is an electron beam according to the described method of claim 44.

46., it is characterized in that described energy beam is an ion beam according to the described method of claim 44.

47., it is characterized in that described energy beam comprises photon according to the described method of claim 44.

48. method according to claim 36 is characterized in that, the step of described adjustment electrostatic force also comprises:

Comprising energy beam of raster scanning on the visual field of particle;

Raster scanning is programmed to have the predetermined residence time and position so that particle has static charge, and wherein said position comprises the position of particle.

49., it is characterized in that described energy beam is an electron beam according to the described method of claim 48.

50., it is characterized in that described energy beam is an ion beam according to the described method of claim 48.

51., it is characterized in that described energy beam comprises photon according to the described method of claim 48.

52. method according to claim 1 is characterized in that, described second sample surfaces comprises bonding agent, to cooperate with particle.

53. method according to claim 1 is characterized in that, the elastic modulus of the elastic modulus of described second sample surfaces and the biddability of probe and particle is Comparatively speaking less.

54. method according to claim 1 is characterized in that, described second sample surfaces insulate; The charged pattern of writing is thereon arranged on second sample surfaces; Electric charge on this charged pattern and the opposite charge on the particle.

55. method according to claim 1 is characterized in that, described second sample surfaces is a fold.

56. method according to claim 1 is characterized in that, the step of described analysing particulates composition also comprises:

Shine particle with analysed beam, and

Detect the emission situation of particle.

57., it is characterized in that described analysed beam is an electron beam according to the described method of claim 56.

58., it is characterized in that described analysed beam is an ion beam according to the described method of claim 56.

59., it is characterized in that described analysed beam comprises photon according to the described method of claim 56.

60. method according to claim 1 is characterized in that, described second sample surfaces is a self-supporting, but thinner than the penetration depth of analysed beam.

61. method according to claim 1 is characterized in that, described second sample surfaces is a porous surface.

62. method according to claim 1 is characterized in that, described second sample surfaces is thinner than the penetration depth of analysed beam, and second sample surfaces is by the framework support of bottom.

63., it is characterized in that the framework of described bottom is a grid according to the described method of claim 62.

64. method according to claim 1 is characterized in that, described second sample surfaces is a probe tip; And the step that wherein said analysing particulates is formed comprises the composition of the particle on the analysis probe tip.

65. according to the described method of claim 64, it is characterized in that the step that probe and accompanying particle are removed from first sample surfaces is to remove from probe and accompanying particle by the position of the probe that is maintained fixed and with first sample surfaces to finish.

Images