CN119335828A - A photolithography alignment system and method - Google Patents
A photolithography alignment system and method Download PDFInfo
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- CN119335828A CN119335828A CN202411876480.8A CN202411876480A CN119335828A CN 119335828 A CN119335828 A CN 119335828A CN 202411876480 A CN202411876480 A CN 202411876480A CN 119335828 A CN119335828 A CN 119335828A
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- lens group
- alignment
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- light source
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a photoetching alignment system and a photoetching alignment method, and belongs to the field of photoetching machine alignment. The invention provides a photoetching alignment system, which solves the problem that the existing photoetching alignment system cannot achieve efficiency and precision, and comprises a light source, a light path component and a collecting component, wherein the light path component comprises a first lens group, a second lens group and a beam splitting prism, the first lens group and the second lens group are arranged on the same side of an alignment mark, the beam splitting prism is arranged between the first lens group and the second lens group, the first lens group is used for receiving light rays emitted by the second lens group, a third lens group is detachably arranged between the first lens group and the beam splitting prism, and the equivalent focal length formed by the focal length of the third lens group and the focal length of the first lens group is larger than the focal length of the first lens group. According to the invention, the switching of the alignment system between the high magnification and the low magnification is realized through the addition of the third lens group, so that the rapid identification of the alignment mark is realized under the low magnification, the high-resolution image collection of the alignment mark is realized under the high magnification, and the accuracy of the alignment system is ensured.
Description
Technical Field
The invention belongs to the technical field of photoetching machines, and particularly relates to a photoetching alignment system and a photoetching alignment method.
Background
In a lithography machine, an alignment system is one of its core systems, which requires alignment to be fast and accurate in order to improve yield and yield, wherein alignment accuracy is one of the core indexes, which is related to the resolution of the lithography machine. Image alignment is a common alignment method that requires that the picture taken be clear and that the picture reach a certain resolution. However, higher alignment accuracy requires higher image resolution, high resolution means that the alignment system requires higher magnification, the larger the magnification, the smaller the field of view, making it difficult to find the Mark in alignment and reducing the success rate of finding the Mark, and if the alignment system uses lower magnification, the time to find the Mark in alignment can be reduced and the success rate can be improved, but the alignment accuracy of the system is reduced.
The lithography machine alignment system and the method for performing high-precision measurement by utilizing light field display are disclosed in China patent application No. CN202411056619.4, the publication date is 2024, 9 and 6, and the lithography machine alignment system and the lithography machine alignment method for performing high-precision measurement by utilizing light field display are disclosed in the patent, and comprise a mask frame and a workpiece table, a projection objective is arranged between the workpiece table and the mask frame, a coaxial alignment system is also arranged between the workpiece table and the mask frame, an upper alignment display and a lower alignment display which are respectively arranged on the mask frame and the workpiece table and used for generating high-precision alignment patterns are also arranged, an upper light control assembly and a lower light control assembly which are fixedly arranged on the periphery of the projection objective are also arranged, and a first acquisition device for acquiring upper light field information change by the upper light control assembly and a second acquisition device for acquiring lower light field information change by the lower light control assembly are also arranged. The alignment display displays high-precision alignment patterns, the light control assembly and the acquisition device are matched for use, the nano-scale alignment precision can be obtained, the structural complexity is low, and the manufacturing cost and difficulty of a semiconductor are reduced. The disadvantage of this patent is that while high precision alignment can be achieved, it is inefficient and complex to operate.
In another example, chinese patent application CN202410145379.9, publication day 2024, 7 and 26, discloses a lithographic alignment method, device, electronic equipment and storage medium, wherein the method comprises providing a wafer to be exposed, arranging a plurality of alignment marks on the surface of the wafer to be exposed, obtaining an absolute position set corresponding to the plurality of alignment marks, wherein the absolute position set comprises an absolute position of each alignment mark under a wafer coordinate system, screening a plurality of target alignment marks from the plurality of alignment marks according to preset mark screening data and the absolute position set, and inputting the plurality of target alignment marks into an alignment system to finish alignment of the wafer to be exposed. The disadvantage of this patent is that the introduction of absolute positions increases the computational power consumption of the whole process, increasing costs and working time.
Disclosure of Invention
1. Problems to be solved
Aiming at the problem that the existing photoetching machine alignment system cannot achieve both efficiency and precision, the invention provides a photoetching alignment system and a photoetching alignment method. According to the invention, the switching of the alignment system between the high magnification and the low magnification is realized through the addition of the third lens group, so that the rapid identification of the alignment mark is realized under the low magnification, the high-resolution image collection of the alignment mark is realized under the high magnification, and the accuracy of the alignment system is ensured.
2. Technical proposal
In order to solve the problems, the invention adopts the following technical scheme.
A lithographic alignment system comprising:
A light source for providing illumination light;
the light path component is used for adjusting the illumination light to irradiate the alignment mark;
the collecting component is used for collecting the image of the alignment mark and imaging the alignment mark onto the collecting component;
The optical path assembly comprises a first lens group, a second lens group and a beam splitting prism, wherein the first lens group and the second lens group are arranged on the same side of the alignment mark, the beam splitting prism is arranged between the first lens group and the second lens group, the first lens group is used for receiving light rays emitted by the second lens group, a third lens group is arranged between the first lens group and the beam splitting prism in a detachable mode, and the equivalent focal length formed by the focal length of the third lens group and the focal length of the first lens group is larger than that of the first lens group.
Furthermore, the first lens group and the second lens group are oppositely arranged, and when the third lens group is arranged at one side close to the first lens group, the third lens group and the first lens group are arranged in parallel or oppositely or integrally.
Still further, the first lens group, the second lens group and the third lens group each comprise one or more lenses.
Further, a collimating mirror is arranged between the light source and the light path component, and illumination light provided by the light source is used for shaping light beams generated by the light source into parallel light through the collimating mirror and enters the light path component.
Further, the light source is a coaxial light source, and the coaxial light source adopts an LED light source.
An alignment method using a lithographic alignment system as claimed in any one of the preceding claims, comprising the steps of:
S1, in an initial alignment stage, illumination light provided by a light source passes through a first lens group and a second lens group to realize positioning alignment marks;
And S2, in the precise alignment stage, a third lens group is arranged on one side of the alignment mark, which is close to the first lens group, so that the image of the alignment mark is collected by the collection assembly.
Furthermore, when the third lens group is installed in the step S2, the third lens group is connected with the first lens group through the connecting mechanism, and the third lens group and the first lens group are locked into an integrated arrangement through the locking mechanism.
3. Advantageous effects
Compared with the prior art, the invention has the beneficial effects that:
(1) The invention introduces a detachable third lens group into the light path component, and changes the system magnification of the whole alignment system by introducing the third lens group or not, so that the alignment system can realize the rapid identification of the alignment mark under the condition of low system magnification, greatly improve the identification efficiency, collect the standard mark image with high image resolution under the condition of high system magnification after identifying the alignment mark, thereby improving the alignment precision of the whole system, realize the rapid identification of the alignment mark without influencing the resolution of the alignment mark image, and realize the advantages of simple structure composition, no need of complex structure and equipment, low cost and strong practicability by only introducing the third lens group;
(2) The invention has the advantages that the first lens group and the second lens group are oppositely arranged, symmetrical light path structures can be formed by the oppositely arranged light path structures, the aberration and distortion in the light path can be reduced, the higher stability and consistency of the light beam in the transmission process can be ensured, the imaging of the alignment mark is clearer and more accurate, and the precision of the alignment system can be improved;
(3) The invention adopts a coaxial light source to illuminate, replaces the traditional light source halogen lamp by the LED light source, improves the light efficiency, reduces the heating value and reduces the system volume, and a collimating mirror is arranged between the light source and the light path component, and further adjusts the light into parallel or nearly parallel light beams, thereby reducing the scattering and distortion of the light in the transmission process, ensuring that the light can more accurately reach an alignment mark and reflect, simultaneously reducing external interference, improving the stability of the light source, realizing alignment more accurately and efficiently and ensuring the precision;
(4) The alignment method is simple to operate, the whole alignment system can obtain two magnifications of high magnification and low magnification of the system by adding or removing the third lens group, switching is achieved, the alignment mark is searched by adopting low magnification in the initial alignment stage so as to spend less time and improve the success rate, the alignment precision of the system is improved by adopting high magnification in the fine alignment stage so as to improve the alignment precision of the system, the complex operation requirement is not needed, staff is convenient to operate, the efficiency is high, the cost is low, and the third lens group can be adjusted according to different use requirements on site so as to realize adjustment of different magnifications of the system, so that the applicability is strong.
Drawings
Fig. 1 is a schematic diagram of the overall structure of the present invention.
Detailed Description
The invention is further described below in connection with specific embodiments and the accompanying drawings.
As shown in fig. 1, a lithographic alignment system, comprising:
a light source for providing illumination light to ensure that the alignment mark can be clearly illuminated;
The light path component is used for adjusting illumination light to irradiate the alignment mark and imaging the alignment mark to image the alignment mark on the collecting component, and the light path component guides and adjusts the light beam to accurately irradiate the alignment mark and also collect reflected or diffracted light signals;
the device comprises a collection component, a feature extraction component and a correction component, wherein the collection component is used for collecting images of the alignment marks, processing and analyzing the images through collecting the images of the alignment marks, extracting features to calculate alignment errors, the alignment errors are usually expressed as position deviations between patterns on a mask and patterns on a wafer, and corresponding adjustment is carried out according to the alignment errors so as to realize accurate alignment.
The optical path assembly comprises a first lens group, a second lens group and a beam splitting prism, wherein the first lens group and the second lens group are arranged on the same side of the alignment mark, the beam splitting prism is arranged between the first lens group and the second lens group, the first lens group is used for receiving light rays emitted by the second lens group, a third lens group is arranged between the first lens group and the beam splitting prism in a detachable mode, and the equivalent focal length formed by the focal length of the third lens group and the focal length of the first lens group is larger than that of the first lens group.
The light path trend of the light path component in the embodiment is that light beams generated by the light source pass through the beam splitting prism and then reach the second lens group, the alignment mark on the surface of the wafer to be exposed is illuminated, then the light irradiated on the alignment mark is emitted to the second lens group, the beam splitting prism, the third lens group and the first lens group in sequence, and then the light is transmitted to the collecting component to collect the images of the alignment mark.
It is explained that when the optical path assembly includes only the first lens group and the second lens group, the focal length of the first lens group is f1, the focal length of the second lens group is f2, and when the optical path assembly is introduced into the third lens group, the focal length formed by the third lens group and the first lens group is an integral, that is, the equivalent focal length is f3, at this time, the system magnification m2=f3/f 2 of the whole alignment system, and because the focal length of the third lens group and the focal length of the first lens group form an equivalent focal length f3 which is greater than the focal length f1 of the first lens group, M1< M2, that is, M1 is a system low magnification and M2 is a system high magnification, when the focal length f2 of the second lens group is unchanged.
It is noted that in a lithographic alignment system, if higher alignment accuracy is required, it is necessary to have higher resolution for the collected image of the alignment mark, and the higher the system magnification, the higher the image resolution, but the higher the system magnification is for the whole alignment system, which means that the smaller the field of view, the smaller the field of view becomes, and the positioning of the alignment mark becomes relatively difficult, so that there is a disadvantage in this way of improving the alignment accuracy by only using the high system magnification. The current mainstream ways of improving alignment accuracy are firstly ways of optimizing exposure parameters, such as changing exposure time, illumination intensity and the like, but the ways are slow in adjustment efficiency and not obvious in effect, and secondly ways of adopting advanced alignment algorithms and models, but the ways are high in calculation power consumption and high in cost.
Therefore, in the implementation, the detachable third lens group is introduced into the light path component, the system magnification of the whole alignment system is changed according to whether the third lens group is introduced or not, so that the alignment system can realize quick identification of the alignment mark under the condition of low system magnification, the identification efficiency is greatly improved, the collection of alignment mark images with high image resolution is realized under the condition of high system magnification after the alignment mark is identified, the alignment precision of the whole system is improved, the whole system can realize quick identification of the alignment mark, the resolution of the alignment mark images is not influenced, the efficiency and the precision are both ensured, the structure is simple, a complex structure and equipment are not needed, and only the third lens group is required to be introduced, so that the cost is low, and the practicability is strong.
In one specific embodiment, the first lens group and the second lens group are arranged oppositely, and when the third lens group is arranged at one side close to the first lens group, the third lens group and the first lens group are arranged in parallel or opposite or integrated.
Specifically, the symmetrical light path structure can be formed by opposite arrangement, so that aberration and distortion in a light path can be reduced, higher stability and consistency of light beams in the transmission process are ensured, imaging of an alignment mark is clearer and more accurate, and accuracy of an alignment system is improved.
The specific arrangement mode of the third lens group is not particularly limited, and the third lens group can be arranged in parallel, opposite or integrated with the first lens group, and only the focal length of the whole lens group, namely the equivalent focal length, is ensured to be larger than that of the first lens group when the third lens group and the first lens group are integrated. The parallel arrangement can make the light path simpler and clearer, is beneficial to reducing complexity and uncertainty in the light path, then reduces interference and fluctuation of light beams in the transmission process, thereby improving the stability and reliability of the light beams, the relative arrangement can ensure that the light beams keep higher stability and consistency in the transmission process, so that the imaging of the alignment mark is clearer and more accurate, thereby improving the alignment precision of the whole system, the integrated arrangement mode can enable the alignment system to be more compact and integrated, reduces the number of connection and interfaces between components, simplifies the installation and maintenance process of the alignment system, and reduces the operation difficulty and cost. The diversified setting modes can be selected in a self-adaptive manner according to the field conditions, so that the whole flexibility and adaptability are improved.
In one embodiment, the first lens group, the second lens group, and the third lens group each comprise one or more lenses. The structure is simple, and the installation and the maintenance are easy.
In one specific embodiment, a collimating mirror is arranged between the light source and the light path component, and the illumination light provided by the light source is used for shaping the light beam generated by the light source into parallel light to enter the light path component through the collimating mirror. Specifically, the setting of the collimating mirror in this embodiment further adjusts the light into parallel or nearly parallel light beams, reduces scattering and distortion of the light in the transmission process, so that the light can more accurately reach the alignment mark and reflect, simultaneously reduces external interference, improves the stability of the light source, thereby realizing alignment more accurately and efficiently, and ensuring accuracy.
Preferably, the light source is a coaxial light source, the coaxial light source ensures that light can vertically irradiate the surface of an object, the shadow and reflection problems caused by oblique light rays are reduced, and the coaxial light source adopts an LED light source to replace a traditional light source halogen lamp, so that the light efficiency is improved, the heating value is reduced, and the system volume is reduced.
An alignment method using a lithographic alignment system as claimed in any one of the preceding claims, comprising the steps of:
S1, in an initial alignment stage, illumination light provided by a light source passes through a first lens group and a second lens group to realize quick positioning of an alignment mark;
and S2, in the precise alignment stage, a third lens group is arranged on one side of the alignment mark, which is close to the first lens group, so that the high-resolution alignment mark image is collected by the collection assembly.
The alignment method is simple to operate, the whole alignment system can obtain two magnifications of high magnification and low magnification of the system by adding or removing the third lens group, switching is achieved, the alignment mark is searched by adopting low magnification in the initial alignment stage so as to spend less time and improve the success rate, the alignment precision of the system is improved by adopting high magnification in the fine alignment stage so as to improve the alignment precision of the system, the operator is convenient to operate, the efficiency is high, the cost is low, and the third lens group can be adjusted according to different use requirements on site so as to realize adjustment of different magnifications of the system, so that the applicability is strong.
In a specific embodiment, when the third lens group is installed in the step S2, the third lens group is connected with the first lens group through the connecting mechanism, and the third lens group and the first lens group are locked into an integrated arrangement through the locking mechanism. The third lens group and the first lens group are integrally arranged to enhance the stability of the whole optical path system, so that the relative movement or vibration between the first lens group and the third lens group is reduced, interference factors in an optical path are reduced, the anti-interference capability and stability of the system are improved, and the alignment precision is improved. And the compactness of being connected between first mirror group and the third mirror group has further been consolidated in locking mechanism's setting, guarantees the stability of whole alignment system then, makes it can be stable and effectual work.
The examples of the present invention are merely for describing the preferred embodiments of the present invention, and are not intended to limit the spirit and scope of the present invention, and those skilled in the art should make various changes and modifications to the technical solution of the present invention without departing from the spirit of the present invention.
Claims (7)
1. A lithographic alignment system, comprising:
A light source for providing illumination light;
The light path component is used for adjusting illumination light to irradiate the alignment mark and imaging the alignment mark on the collecting component;
A collection component for collecting images of the alignment marks;
The optical path assembly comprises a first lens group, a second lens group and a beam splitting prism, wherein the first lens group and the second lens group are arranged on the same side of the alignment mark, the beam splitting prism is arranged between the first lens group and the second lens group, the first lens group is used for receiving light rays emitted by the second lens group, a third lens group is arranged between the first lens group and the beam splitting prism in a detachable mode, and the equivalent focal length formed by the focal length of the third lens group and the focal length of the first lens group is larger than that of the first lens group.
2. A lithographic alignment system according to claim 1, wherein the first lens group and the second lens group are arranged opposite to each other, and the third lens group is arranged parallel to or opposite to or integrated with the first lens group when the third lens group is arranged near one side of the first lens group.
3. A lithographic alignment system according to claim 1 or 2, wherein said first, second and third lens groups each comprise one or more lenses.
4. A lithographic alignment system according to claim 1, wherein a collimator is arranged between the light source and the light path assembly, and wherein the illumination light provided by the light source is directed through the collimator to shape the light beam generated by the light source into parallel light into the light path assembly.
5. A lithographic alignment system according to claim 1 or 4, wherein said light source is a coaxial light source and the coaxial light source is an LED light source.
6. An alignment method using a lithographic alignment system according to any of claims 1-5, comprising the steps of:
S1, in an initial alignment stage, illumination light provided by a light source passes through a first lens group and a second lens group to realize positioning alignment marks;
And S2, in the precise alignment stage, a third lens group is arranged on one side of the alignment mark, which is close to the first lens group, so that the image of the alignment mark is collected by the collection assembly.
7. The method of claim 6, wherein the third lens group is connected to the first lens group by a connecting mechanism and is locked to the first lens group by a locking mechanism in an integrated manner during the installation of the third lens group in the step S2.
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| CN202411876480.8A CN119335828A (en) | 2024-12-19 | 2024-12-19 | A photolithography alignment system and method |
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| CN202411876480.8A CN119335828A (en) | 2024-12-19 | 2024-12-19 | A photolithography alignment system and method |
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| CN118276271A (en) * | 2024-04-12 | 2024-07-02 | 中国科学院长春光学精密机械与物理研究所 | Objective optical machine structure for detecting mask whiteboard defect |
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