CN118672072B - Immersion lithography machine - Google Patents

Immersion lithography machine

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Publication number
CN118672072B
CN118672072B CN202410798926.3A CN202410798926A CN118672072B CN 118672072 B CN118672072 B CN 118672072B CN 202410798926 A CN202410798926 A CN 202410798926A CN 118672072 B CN118672072 B CN 118672072B
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CN
China
Prior art keywords
immersion
laser
refractive index
mask
high refractive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202410798926.3A
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Chinese (zh)
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CN118672072A (en
Inventor
陈会斌
邱杰振
颜天才
田锋
李承哲
胡翔
陈呈
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Wuyuan Semiconductor Technology Qingdao Co ltd
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Wuyuan Semiconductor Technology Qingdao Co ltd
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Application filed by Wuyuan Semiconductor Technology Qingdao Co ltd filed Critical Wuyuan Semiconductor Technology Qingdao Co ltd
Priority to CN202410798926.3A priority Critical patent/CN118672072B/en
Publication of CN118672072A publication Critical patent/CN118672072A/en
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Publication of CN118672072B publication Critical patent/CN118672072B/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention relates to an immersion lithography machine which comprises a laser, a plurality of groups of lenses, an immersion chamber, a mask, a control system and a wafer, wherein the groups of lenses are arranged between the laser and the immersion chamber and are used for focusing and collimating laser beams emitted by the laser, the immersion chamber is arranged between the lenses and the mask or between the mask and the wafer and is filled with a high-refractive-index medium, the mask is arranged below the immersion chamber, the laser beams irradiate on the mask after passing through the immersion chamber and form a patterned beam, the control system is configured to adjust the flow speed and/or the temperature of the high-refractive-index medium, the wafer is arranged below the mask, and the patterned beam irradiates on the wafer after passing through the mask, so that the photoresist on the surface of the wafer is subjected to chemical reaction or physical change to form a corresponding pattern. The invention solves the technical problems of the existing photoetching technology that the effective wavelength and focal depth of the photoetching light source are limited to be short, and the photoetching resolution and precision are low.

Description

Immersion lithography machine
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to an immersion lithography machine.
Background
In modern semiconductor fabrication, photolithography is one of the core processes in integrated circuit fabrication. The development of photolithography has undergone an evolution from dry lithography to immersion lithography to accommodate the ever shrinking feature sizes and to improve the accuracy of chip fabrication. The existing dry photoetching machine is difficult to further improve the resolution ratio due to the fact that the refractive index of air is low and the wavelength of light is limited. In contrast, immersion lithography can achieve finer patterning by introducing a high refractive index medium between the lens and the wafer, which significantly improves resolution and Numerical Aperture (NA) of the optical system.
In addition, the existing immersion lithography system is mostly an independent immersion module and is separated from a reticle (mask) system, so that the system structure is complex, the manufacturing cost is high, certain difficulty exists in medium flow and temperature control, and the overall performance and stability are affected.
Disclosure of Invention
Aiming at the defects existing in the related art, the invention provides an immersion lithography machine, which solves the technical problems that the existing lithography process is limited by the effective wavelength of a lithography light source, the focal depth is short, and the lithography resolution and precision are low.
In one possible embodiment, an immersion lithography machine is provided that includes a laser that emits a laser beam, a plurality of sets of lenses disposed between the laser and an immersion chamber that focuses and collimates the laser beam emitted by the laser, an immersion chamber disposed between the lenses and the mask or between the mask and the wafer that is filled with a high refractive index medium, a mask disposed below the immersion chamber that irradiates the laser beam onto the mask and forms a patterned beam after passing through the immersion chamber, a control system configured to adjust a flow rate and/or a temperature of the high refractive index medium, and a wafer disposed below the mask that irradiates the patterned beam onto the wafer after passing through the mask to cause a chemical reaction or a physical change in a photoresist on a surface of the wafer to form a corresponding pattern.
In one possible embodiment, the device further comprises a temperature sensor and a temperature regulator, wherein the temperature sensor is used for detecting the temperature of the high-refractive-index medium, and the control system is configured to control the temperature regulating device to heat or cool according to the temperature of the high-refractive-index medium, and the temperature regulating device is used for heating or cooling the high-refractive-index medium.
In one possible embodiment, the flow rate regulator further comprises a valve, which is controlled by the instruction of the control system and opens to a corresponding opening degree.
In one possible embodiment, the immersion chamber is a sealed space of variable volume for containing a high refractive index medium.
In one possible embodiment, the laser is an argon fluoride (ArF) laser.
In one possible implementation, the laser emits laser light at a wavelength of 193 nanometers.
In one possible embodiment, the high refractive index medium is deionized water or highly purified oil.
In one possible embodiment, the temperature of the high refractive index medium is in the range of 15 ℃ to 25 ℃.
In a possible embodiment, the immersion system further comprises a flow rate sensor for detecting a flow rate of the high refractive index medium in the immersion chamber, the control system being further configured to control the opening of the valve of the flow rate regulator in dependence on the flow rate of the high refractive index medium.
Based on the technical scheme, the immersion lithography machine is provided with the lens and the immersion chamber filled with the high-refractive-index medium between the laser and the mask, so that the problem that the conventional lithography machine is limited by the wavelength of a light source in the high-resolution patterning process is solved, water or oil is used as an immersion material, the refractive index of the system is improved, the wavelength of light is reduced, the focal depth is increased, higher resolution and more accurate chip manufacturing are realized, the lithography precision and pattern definition are improved, and the reliability and efficiency of a semiconductor manufacturing process are improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
FIG. 1 is a schematic view of an immersion lithography machine according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of refraction of an immersion lithography machine according to one embodiment of the present invention;
FIG. 3 is a schematic view of an immersion lithography machine according to another embodiment of the present invention;
FIG. 4 is a schematic view of an immersion lithography machine according to another embodiment of the present invention.
In the figure:
1. Laser, 2, lens, 3, immersion chamber, 4, mask, 5, wafer, 6, control system, 7, temperature sensor, 8, temperature regulator, 9, flow rate regulator, 10, flow rate sensor, 111, optical sensor, 112, immersion material storage box I, 113, immersion material storage box II, 114, immersion material storage box III, 115, valve I, 116, valve II, 117, valve III.
Detailed Description
The technical solutions in the embodiments will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center", "lateral", "longitudinal", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", or a third "may explicitly or implicitly include one or more such feature.
In the description of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, directly connected, or indirectly connected through an intermediary, or may be in communication with the interior of two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The application provides an immersion lithography machine for solving the technical problems of the existing lithography process that the effective wavelength and focal depth of a lithography light source are limited to be short, and the lithography resolution and precision are low.
Referring to fig. 1, in one possible embodiment, the laser device comprises a laser 1 for emitting a laser beam, a plurality of groups of lenses 2 arranged between the laser 1 and an immersion chamber 3 for focusing and collimating the laser beam emitted by the laser 1, the immersion chamber 3 arranged between the lenses 2 and the mask 4 or between the mask 4 and a wafer 5 and filled with a high refractive index medium, the mask 4 arranged below the immersion chamber 3, the laser beam passing through the immersion chamber 3 and irradiating the mask 4 to form a patterned beam, and a control system 6 configured to adjust the flow speed and/or temperature of the high refractive index medium, the wafer 5 arranged below the mask 4, and the patterned beam passing through the mask 4 and irradiating the wafer 5 to cause a chemical reaction or physical change of photoresist on the surface of the wafer 5 to form a corresponding pattern.
In the above scheme, the laser 1 is used for emitting laser beams, the multiple groups of lenses 2 are arranged between the laser 1 and the immersion chamber 3 and used for focusing and collimating the laser beams emitted by the laser 1, the immersion chamber 3 is arranged between the lenses 2 and the mask 4, see fig. 3, or is arranged between the mask 4 and the wafer 5, see fig. 1, the high refractive index medium is filled in the immersion chamber, the laser beams enter the immersion chamber 3 after being focused and collimated by the lenses 2, the propagation path and focal length of the laser beams can be changed due to the high refractive index medium in the immersion chamber 3, so that the photoetching resolution is improved, the laser beams irradiate the mask 4 after passing through the immersion chamber 3 to form a patterned beam, the patterned beam irradiates the wafer 5 through the mask 4 to enable the photoresist on the surface of the wafer 5 to generate chemical reaction or physical change to form a corresponding pattern, and the control system 6 is used for adjusting the flow speed and/or temperature of the high refractive index medium so as to ensure the stability and precision of the photoetching process.
Referring to fig. 2, by introducing a high refractive index medium and immersion lithography, the wavelength of the laser is reduced, the focal depth is increased, more efficient beam focusing and collimation can be achieved, and the resolution and accuracy of lithography are improved.
In one possible embodiment, the device further comprises a temperature sensor 7 and a temperature regulating device 8.
The temperature sensor 7 is used for detecting the temperature of the medium with high refractive index, and the control system 6 controls the temperature regulating device 8 to heat or refrigerate according to the temperature of the medium with high refractive index, so that the medium is kept in an optimal working temperature range, and the stability and the precision of the photoetching process are ensured.
The temperature of the medium with high refractive index can be monitored and regulated in real time through the temperature sensor 7 and the temperature regulating device 8, so that the medium with high refractive index is ensured to be in an optimal working state, and the photoetching precision and stability are improved.
In one possible embodiment, a flow rate regulator 9 is also included.
The flow rate regulator 9 is provided with a valve which is controlled by the instruction of the control system 6 and is opened to a corresponding opening degree to regulate the flow rate of the medium with high refractive index, thereby ensuring the stability and the precision of the photoetching process.
By introducing the flow rate regulator 9, accurate control of the flow rate of the medium with high refractive index can be realized, and the stability and the accuracy of the photoetching process are further improved.
The flow rate regulator 9 may employ different types of valves, such as electric valves, pneumatic valves, etc., to meet different control demands.
In one possible embodiment, the immersion chamber 3 is a sealed space of variable volume.
The immersion chamber 3 is designed as a sealed space of variable volume for accommodating a medium of high refractive index, and by adjusting the volume of the immersion chamber 3, the amount and flow state of the medium can be controlled to further optimize the lithographic effect.
The design of the immersion chamber 3 with variable volume increases the control flexibility of the medium with high refractive index, can better adapt to different photoetching demands and improves the photoetching efficiency and precision.
In one possible embodiment, the laser 1 is an argon fluoride (ArF) laser.
An argon fluoride (ArF) laser emits a 193 nm wavelength laser beam, which is focused and collimated by a lens 2, enters an immersion chamber 3, is refracted by a high refractive index medium, and finally irradiates onto a mask 4 to form a high resolution patterned beam.
The laser with 193 nm wavelength is emitted by adopting an argon fluoride (ArF) laser, so that the resolution and the precision of photoetching can be effectively improved, and the method is suitable for the photoetching requirement of the advanced process.
In one possible embodiment, the laser 1 emits laser light at a wavelength of 193 nm.
The laser 1 emits a 193 nm wavelength laser beam, enters the immersion chamber 3 after focusing and collimation by the lens 2, is refracted by a high refractive index medium, and finally irradiates onto the mask 4 to form a high resolution patterned beam.
The 193 nm wavelength laser is adopted, so that the resolution and the precision of photoetching can be effectively improved, and the photoetching method is suitable for the photoetching requirement of the advanced process.
In one possible embodiment, the high refractive index medium is deionized water or highly purified oil.
The immersion chamber 3 is filled with a high refractive index medium, which can be deionized water or highly purified oil, and the high refractive index medium changes the propagation path and focal length of the laser beam, thereby improving the photoetching resolution and precision.
Deionized water or highly purified oil is selected as the medium with high refractive index, and the type of the medium can be adjusted according to different process requirements so as to optimize the photoetching effect.
In one possible embodiment, the temperature of the high refractive index medium is in the range of 15 ℃ to 25 ℃.
The temperature of the high refractive index medium is controlled within the range of 15 ℃ to 25 ℃ to help maintain the stability of the medium and the precision of the photoetching process, and the control system 6 heats or cools the high refractive index medium through the temperature regulating device 8 according to the detection result of the temperature sensor 7 so as to ensure that the high refractive index medium is within the optimal temperature range.
By controlling the temperature of the high refractive index medium within the range of 15 ℃ to 25 ℃, the influence of temperature change on the photoetching precision can be effectively reduced, and the stability and effect of the photoetching process are improved.
The temperature regulating device 8 can adopt different heating or cooling technologies, such as resistance heating, heat pump refrigeration and the like, so as to improve the temperature control precision and efficiency.
In one possible embodiment, a flow rate sensor 10 is also included.
The flow rate sensor 10 is used for detecting the flow rate of the high refractive index medium in the immersion chamber 3, and the control system 6 controls the valve opening of the flow rate regulator 9 according to the detection result of the flow rate sensor 10 so as to regulate the flow rate of the high refractive index medium and ensure the stability and the precision of the photoetching process.
By introducing the flow sensor 10, real-time monitoring and accurate control of the flow rate of the high refractive index medium can be realized, and the stability and accuracy of the photoetching process are further improved.
The flow sensor 10 may employ different types of sensors, such as ultrasonic flow sensors or electromagnetic flow sensors, to meet different detection accuracy and response speed requirements.
In one possible embodiment, the system further comprises a material selection mechanism, see fig. 4, comprising an optical sensor 111, an immersion material storage box I112, an immersion material storage box II113, an immersion material storage box III114, a valve I115, a valve II116 and a valve III117, wherein the optical sensor 111 is respectively arranged on two surfaces of a wafer and used for measuring the thickness of the wafer and sending the thickness to a control system, the immersion material storage box I112, the immersion material storage box II113 and the immersion material storage box III114 are respectively connected into the immersion chamber 3 through the valve I115, the valve II116 and the valve III117, the valve I115, the valve II116 and the valve III117 are controlled to be opened or closed by the control system 6, the immersion material storage box I112, the immersion material storage box II113 and the immersion material storage box III114 store immersion liquid/high refractive index media of different materials, and the control system 6 determines to use the different immersion liquid/high refractive index media according to the thickness of the wafer and controls the corresponding valves to be opened so as to fill the immersion chamber 3 with the corresponding immersion liquid/high refractive index media, and the intelligent immersion material selection mechanism is improved.
The liquid filled in the immersion chamber may be deionized water or oil or other mixed liquid, and is currently filled with deionized water.
Immersion lithography is an advanced form of lithography that uses water as a medium to increase lithographic resolution, allowing higher numerical apertures and smaller feature sizes, typically deployed using 193 nm wavelength ArF lasers. In the immersion lithography process, water is filled in the space between the wafer and the lens of the lithography machine, and the purpose of shortening the wavelength of light and increasing the focal depth is achieved by utilizing the high refractive index of the water
Immersion lithography is an important technique in semiconductor manufacturing to achieve smaller spots and higher resolution by introducing a high refractive index medium, water, between the wafer and the lens during lithography. So that chips with finer features can be produced, is a key technology that drives the development of microelectronics technologies to the nanometer scale. Currently, light sources supporting wavelengths up to 193 nm are mainly used in the production of high performance chips, such as memories and advanced processors. Immersion lithography is also continually challenged with ever-advancing technology.
The present invention proposes a solution to integrate an immersion system on a mask reticle, which system can optionally use water or oil as immersion material. This design aims to further reduce the wavelength of light by increasing the refractive index of the system to achieve higher resolution and more accurate chip fabrication. Mainly comprises the following key technologies and steps:
The system comprises the following components:
An immersion chamber, which is located between the reticles and the lens, may be filled with water or oil.
And the material selection mechanism is used for automatically selecting water or oil as immersion material according to the photoetching requirements.
And a control system for regulating the flow and temperature of the immersion material to ensure the stability of the photoetching process.
The operation method comprises the following steps:
The type and parameters of the immersion material are set according to the manufacturing requirements.
The selected immersion material is automatically filled into the immersion chamber prior to photolithography.
In the photoetching process, the control system monitors and adjusts the state of the immersed material in real time, so as to ensure the photoetching quality.
The advantages are that:
The invention can effectively improve photoetching resolution, reduce equipment cost and enhance flexibility and reliability of the manufacturing process. The technology has important significance for promoting the development of microelectronic devices to higher performance and smaller size.
The protection scope is as follows:
the protection scope of the invention includes all the methods, steps, algorithms and software and hardware implementations thereof, which are applicable to various occasions requiring photoetching.
The immersion lithography machine adopts a high refractive index medium and an immersion lithography technology, and effectively improves the resolution and the precision of lithography. The high refractive index medium changes the propagation path and focal length of the laser beam, so that the fineness and accuracy of the pattern are greatly improved, and the photoetching requirement of the advanced process can be met.
The control system is introduced, so that the temperature and the flow rate of the medium with high refractive index can be adjusted in real time, and the continuity and the stability of the photoetching process are ensured. The configuration of the plurality of groups of lenses improves the focusing and collimating efficiency of the laser beams, further shortens the photoetching time and improves the overall production efficiency.
By integrating the temperature sensor and the flow velocity sensor, the invention realizes the automatic control of the medium with high refractive index, so that the operation is simpler and more convenient, and the requirement of human intervention is reduced. The intelligent design of the control system enables the equipment to be debugged and maintained more conveniently, and the operation experience of a user is improved.
The control system can monitor and adjust the temperature and the flow rate of the medium with high refractive index in real time, and avoid equipment failure or potential safety hazard caused by overhigh temperature or unstable flow rate. The sealed immersion chamber design reduces the risk of leakage of high refractive index media, improving the safety of the apparatus.
Finally, it should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described by differences from other embodiments, and identical and similar parts between the embodiments are only required to be mutually referred.
The foregoing embodiments are only for illustrating the technical scheme of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the present invention may be modified or parts of technical features may be equivalently replaced without departing from the spirit of the technical scheme of the present invention, and the scope of the technical scheme of the present invention is covered by the claims.

Claims (8)

1.一种浸没光刻机，其特征在于，包括：1. An immersion lithography machine, characterized in that it comprises: 激光器（1），发射激光束；Laser (1) emits a laser beam; 多组透镜（2），设置在激光器（1）和浸没室（3）之间，用于聚焦和准直激光器（1）发出的激光束；Multiple lenses (2) are arranged between the laser (1) and the immersion chamber (3) to focus and collimate the laser beam emitted by the laser (1); 浸没室（3），设置在透镜（2）与掩膜（4）之间，其内填充高折射率介质，且所述浸没室（3）为可变容积的密封空间；An immersion chamber (3) is disposed between the lens (2) and the mask (4), and is filled with a high refractive index medium. The immersion chamber (3) is a sealed space with a variable volume. 材料选择机构，与所述浸没室（3）连通，包括三个浸没材料存储箱（112, 113, 114）以及三个阀门（115, 116, 117），每个所述浸没材料存储箱（112, 113, 114）分别通过一个所述阀门（115, 116, 117）接入所述浸没室（3），所述浸没材料存储箱内存储有不同种类的浸没液；The material selection mechanism, which is connected to the immersion chamber (3), includes three immersion material storage tanks (112, 113, 114) and three valves (115, 116, 117). Each of the immersion material storage tanks (112, 113, 114) is connected to the immersion chamber (3) through one of the valves (115, 116, 117). The immersion material storage tanks store different types of immersion liquids. 掩膜（4），设置在浸没室（3）下方，激光束经过浸没室（3）后照射到掩膜（4）上并形成图形化光束；The mask (4) is set below the immersion chamber (3). After the laser beam passes through the immersion chamber (3), it irradiates the mask (4) and forms a patterned beam. 控制系统（6），被配置为调节高折射率介质的流动速度和/或温度，并根据晶圆的厚度控制所述阀门（115, 116, 117）的开闭以向所述浸没室（3）内选择性地填充不同种类的浸没液；The control system (6) is configured to regulate the flow rate and/or temperature of the high refractive index medium and control the opening and closing of the valves (115, 116, 117) according to the thickness of the wafer to selectively fill the immersion chamber (3) with different types of immersion liquids. 晶圆（5），设置在掩膜（4）下方，图形化光束经过掩膜（4）后照射到晶圆（5）上，使晶圆（5）表面的光刻胶发生化学反应或物理变化，形成对应的图案。The wafer (5) is placed below the mask (4). The patterned beam passes through the mask (4) and then shines on the wafer (5), causing the photoresist on the surface of the wafer (5) to undergo a chemical reaction or physical change, forming the corresponding pattern. 2.根据权利要求1的浸没光刻机，其特征在于，还包括温度传感器（7）、温度调节装置（8），其中，2. The immersion lithography machine according to claim 1, characterized in that it further includes a temperature sensor (7) and a temperature regulating device (8), wherein, 温度传感器（7），用于检测高折射率介质的温度；Temperature sensor (7) is used to detect the temperature of a high refractive index medium; 控制系统（6）被配置为：根据高折射率介质的温度，控制温度调节装置（8）加热或制冷；The control system (6) is configured to control the temperature regulating device (8) to heat or cool according to the temperature of the high refractive index medium; 温度调节装置（8），用于对高折射率介质进行加热或冷却。Temperature control device (8) is used to heat or cool high refractive index media. 3.根据权利要求2的浸没光刻机，其特征在于，还包括流速调节器（9），具有阀门，受控于控制系统（6）的指令，打开到相应的开度。3. The immersion lithography machine according to claim 2, characterized in that it further includes a flow rate regulator (9) having a valve controlled by instructions from the control system (6) to open to a corresponding degree. 4.根据权利要求3的浸没光刻机，其特征在于，激光器（1）为氟化氩（ArF）激光器。4. The immersion lithography machine according to claim 3, wherein the laser (1) is an argon fluoride (ArF) laser. 5.根据权利要求4的浸没光刻机，其特征在于，激光器（1）发射193纳米波长的激光。5. The immersion lithography machine according to claim 4, characterized in that the laser (1) emits a laser with a wavelength of 193 nanometers. 6.根据权利要求5的浸没光刻机，其特征在于，高折射率介质为去离子水或高度纯化的油。6. The immersion lithography machine according to claim 5, characterized in that the high refractive index medium is deionized water or highly purified oil. 7.根据权利要求6的浸没光刻机，其特征在于，高折射率介质的温度范围为15℃至25℃。7. The immersion lithography machine according to claim 6, wherein the temperature range of the high refractive index medium is 15°C to 25°C. 8.根据权利要求7的浸没光刻机，其特征在于，还包括流速传感器（10），用于检测浸没室（3）内高折射率介质的流速；8. The immersion lithography machine according to claim 7, characterized in that it further includes a flow rate sensor (10) for detecting the flow rate of the high refractive index medium in the immersion chamber (3); 控制系统（6）还被配置为：根据高折射介质的流速控制流速调节器（9）的阀门的开度。The control system (6) is also configured to control the opening of the valve of the flow rate regulator (9) according to the flow rate of the high-refractive medium.
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