CN113937023B - Method to test the effect of defects on energy transfer in 2D material heterojunctions - Google Patents

Method to test the effect of defects on energy transfer in 2D material heterojunctions Download PDF

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CN113937023B
CN113937023B CN202111012065.4A CN202111012065A CN113937023B CN 113937023 B CN113937023 B CN 113937023B CN 202111012065 A CN202111012065 A CN 202111012065A CN 113937023 B CN113937023 B CN 113937023B
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heterojunction
transition metal
metal sulfide
energy transfer
defects
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CN113937023A (en
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刘大猛
王江彩
雒建斌
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Tsinghua University
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Abstract

The invention provides a method for testing energy transfer influenced by defects in a two-dimensional material heterojunction, which relates to the technical field of semiconductors and comprises the following steps: a single-layer lower-layer transition metal sulfide, an isolation layer and a single-layer upper-layer transition metal sulfide are sequentially arranged from bottom to top to prepare a heterojunction; performing plasma treatment on the heterojunction for a plurality of times to introduce defects into the heterojunction, wherein the first treatment time is equal to 0 seconds; each time after the heterojunction is subjected to plasma treatment, the heterojunction is detected. The separation layer is arranged to enable the space between the lower transition metal sulfide and the upper transition metal sulfide to be generated, so that the influence of charge transfer between the lower transition metal sulfide and the upper transition metal sulfide on the accuracy of a test result is avoided. And detecting the energy transfer conditions of the heterojunction after plasma treatment at different times to obtain the influence of the defect on the heterojunction energy transfer.

Description

Method for testing defect influence energy transfer in two-dimensional material heterojunction
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for testing energy transfer influenced by defects in a two-dimensional material heterojunction.
Background
Energy transfer is a non-radiative transfer process from donor to acceptor, and has led to extensive research in various photovoltaic applications, including solar cells, light emitting diodes, and lasers, due to its high energy conversion efficiency and strong emission characteristics.
In nanoscale semiconductor hybrid structures, energy transfer between different materials is often responsible for their photoresponsivity. Since Transition Metal Sulfides (TMDCs) have a strong exciton effect, different two-dimensional TMDCs can be coupled by van der waals forces to form heterojunctions in general, and are used for studying energy transfer between different materials.
However, due to the low coulomb shielding effect and the high sensitivity to intrinsic doping, defects are easily introduced into TMDC during production or operation, thereby strongly affecting the electronic structure and optical bandgap of TMDC, ultimately affecting energy transfer between materials. Understanding the effect of defects on the energy transfer kinetics of two-dimensional TMDC heterostructures is very important for developing optoelectronic devices based on TMDC heterostructures.
It is therefore an object of the present invention to provide a method for testing a two-dimensional material heterojunction for defects affecting energy transfer.
Disclosure of Invention
The invention aims to provide a method for testing energy transfer influenced by defects in a two-dimensional material heterojunction.
The invention provides a method for testing defect influence energy transfer in a two-dimensional material heterojunction, which comprises the following steps:
A single-layer lower-layer transition metal sulfide, an isolation layer and a single-layer upper-layer transition metal sulfide are sequentially arranged from bottom to top to prepare a heterojunction;
Performing plasma treatment on the heterojunction for a plurality of times to introduce defects into the heterojunction, wherein the first treatment time is 0 seconds;
And detecting the heterojunction after each plasma treatment of the heterojunction.
According to the method for testing the defect influence energy transfer in the two-dimensional material heterojunction, which is provided by the invention, the heterojunction is detected, and the method comprises the following steps:
Detecting the heterojunction through a steady-state fluorescence spectrum technology to obtain a PL spectrum of the heterojunction with corresponding processing time; and/or the number of the groups of groups,
Detecting the heterojunction through a transient fluorescence lifetime imaging technology to obtain a fluorescence lifetime imaging graph and a fluorescence lifetime decay curve of the heterojunction at corresponding processing time.
According to the method for testing the defect influence energy transfer in the two-dimensional material heterojunction, after the fluorescence lifetime decay curve of the heterojunction with corresponding processing time is obtained, the method further comprises the following steps:
fitting the fluorescence lifetime decay curve to obtain exciton lifetime and average exciton lifetime;
and calculating the energy transfer rate and the energy transfer efficiency according to the average exciton life.
According to the method for testing the defect influence energy transfer in the two-dimensional material heterojunction, before the heterojunction is subjected to plasma treatment for a plurality of times, the method further comprises the following steps:
And verifying the lower layer transition metal sulfide and the upper layer transition metal sulfide respectively through steady-state Raman spectrum characteristic peaks and characteristic peaks.
According to the method for testing the defect influence energy transfer in the two-dimensional material heterojunction, before the heterojunction is subjected to plasma treatment for a plurality of times, the method further comprises the following steps:
and detecting the thicknesses of the lower transition metal sulfide, the upper transition metal sulfide and the isolating layer of the heterojunction respectively to determine the number of layers of the lower transition metal sulfide, the upper transition metal sulfide and the isolating layer.
According to the method for testing the defect influence energy transfer in the two-dimensional material heterojunction, the isolation layer comprises a plurality of layers of boron nitride.
According to the method for testing the influence of defects on energy transfer in the two-dimensional material heterojunction, provided by the invention, the lower-layer transition metal sulfide is tungsten disulfide, and the upper-layer transition metal sulfide is molybdenum disulfide.
According to the method for testing the defect influence energy transfer in the two-dimensional material heterojunction, the plasma treatment comprises the following steps:
And placing the heterojunction into an oxygen plasma cavity for treatment.
According to the method for testing the defect influence energy transfer in the two-dimensional material heterojunction, the detection of the heterojunction by a transient fluorescence lifetime imaging technology comprises the following steps:
the heterojunction was detected by an inverted fluorescence microscope with time-dependent single photon counting.
According to the method for testing the defect influence energy transfer in the two-dimensional material heterojunction, the detection of the heterojunction through the steady-state fluorescence spectrum technology comprises the following steps:
The heterojunction is detected by confocal raman spectroscopy.
According to the method for testing the influence energy transfer of the defects in the two-dimensional material heterojunction, provided by the invention, the separation distance between the lower transition metal sulfide and the upper transition metal sulfide can be generated by arranging the isolation layer, so that the influence of charge transfer on the accuracy of a test result is avoided. And detecting the heterojunction after introducing defects into the heterojunction through plasma treatment, and obtaining the influence of the defects with different densities on heterojunction energy transfer through comparing the detection results of the heterojunction with different treatment times.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for testing energy transfer due to defect in a two-dimensional material heterojunction according to the present invention;
FIG. 2 is an optical microscope image of a molybdenum disulfide/boron nitride/tungsten disulfide heterojunction provided by the present invention;
FIG. 3 is a Raman spectrum of molybdenum disulfide in a molybdenum disulfide/boron nitride/tungsten disulfide heterojunction treated by the plasma for different times;
FIG. 4 is a graph of steady-state PL spectrum intensity of a molybdenum disulfide/boron nitride/tungsten disulfide heterojunction for different times of plasma treatment provided by the invention;
FIG. 5 is a graph of fluorescence lifetime imaging of a molybdenum disulfide/boron nitride/tungsten disulfide heterojunction with different times of plasma treatment provided by the present invention;
FIG. 6 is a graph of time resolved fluorescence lifetime decay for different regions in a molybdenum disulfide/boron nitride/tungsten disulfide heterojunction for different times of plasma treatment provided by the present invention;
Fig. 7 is a graph of energy transfer rate and energy transfer efficiency as a function of plasma processing time provided by the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The method of testing a two-dimensional material heterojunction for defect-influencing energy transfer in accordance with the present invention is described below in conjunction with fig. 1-7.
Specifically, a method for testing defect influence energy transfer in a two-dimensional material heterojunction comprises the following steps:
and sequentially placing a single-layer lower-layer transition metal sulfide, an isolation layer and a single-layer upper-layer transition metal sulfide from bottom to top to prepare the heterojunction.
The heterojunction was subjected to several plasma treatments to introduce defects into the heterojunction, with a first treatment time of 0 seconds.
Each time after the heterojunction is subjected to plasma treatment, the heterojunction is detected.
The separation layer is arranged to enable the space between the lower transition metal sulfide and the upper transition metal sulfide to be generated, so that the influence of charge transfer between the lower transition metal sulfide and the upper transition metal sulfide on the accuracy of a test result is avoided. And detecting the heterojunction after introducing defects into the heterojunction through plasma treatment, and comparing detection results of the heterojunction with different treatment time to obtain the influence of the defects with different densities on heterojunction energy transfer.
In some embodiments provided herein, detecting the heterojunction includes:
the heterojunction is detected by a steady-state fluorescence spectrum technique to obtain the PL spectrum of the heterojunction for the corresponding processing time.
And/or detecting the heterojunction through a transient fluorescence lifetime imaging technology to obtain a fluorescence lifetime imaging graph and a fluorescence lifetime decay curve of the heterojunction at corresponding processing times.
After introducing defects into the heterojunction through plasma treatment, detecting the heterojunction through a steady-state fluorescence spectrum technology and a transient fluorescence lifetime imaging technology, and comparing detection results of the heterojunction with different treatment time to obtain the influence of the defects on heterojunction energy transfer. And the influence of the defects on energy transfer can be observed rapidly and intuitively through a steady-state fluorescence spectrum and a transient fluorescence lifetime imaging chart.
In some embodiments provided herein, the lower transition metal sulfide is tungsten disulfide and the upper transition metal sulfide is molybdenum disulfide.
In some embodiments provided herein, the isolation layer comprises several layers of boron nitride. By providing boron nitride, charge transfer between the lower layer transition metal sulfide and the upper layer transition metal sulfide can be avoided. Alternatively, the number of layers of boron nitride is set to 10 to 20.
The lower layer transition metal sulfide is tungsten disulfide, and the upper layer transition metal sulfide is molybdenum disulfide. The heterojunction of the remaining material is the same as the principle.
Optionally, the preparing the heterojunction by sequentially placing a single layer of lower layer transition metal sulfide, a single layer of isolation layer and a single layer of upper layer transition metal sulfide from bottom to top includes:
Firstly, preparing a single-layer molybdenum disulfide, tungsten disulfide and a plurality of layers of boron nitride samples by adopting a mechanical stripping method. The single layer of tungsten disulfide is mechanically stripped from the bulk crystal to the glass substrate, while the single layer of molybdenum disulfide and layers of boron nitride are mechanically stripped from the bulk crystal to the gel film substrate. And under an optical microscope, covering a plurality of layers of boron nitride on the gel film substrate on a single layer of tungsten disulfide, and standing for 5 minutes after covering and contacting to obtain the boron nitride/tungsten disulfide heterojunction. Covering the molybdenum disulfide of the gel film substrate on the boron nitride/tungsten disulfide heterojunction on the glass substrate again, and finally obtaining the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction on the glass substrate.
Referring to the raman spectra of molybdenum disulfide in the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction for various times with the plasma treatment shown in fig. 3. The raman characteristic peak out-of-plane a 1g mode of molybdenum disulfide exhibits a blue shift, while in-planeThe pattern exhibited a more pronounced red shift with increasing oxygen plasma irradiation time, indicating that defects were introduced into the molybdenum disulfide after plasma treatment, and that the defect density increased with increasing plasma treatment time.
By testing the PL spectra of a monolayer of tungsten disulfide and a monolayer of molybdenum disulfide, both PL spectra were compared to the PL spectra of a molybdenum disulfide/boron nitride/tungsten disulfide heterojunction with a plasma treatment time of 0 seconds. Compared with the single-layer structure of the corresponding material, the PL intensity of the tungsten disulfide layer in the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction region with the plasma treatment time of 0 seconds is enhanced, the PL intensity of the molybdenum disulfide layer is greatly reduced, the PL peak value is not obviously changed, the defect-free molybdenum disulfide/boron nitride/tungsten disulfide heterojunction can be obtained, the energy transfer process exists, and the energy is transferred from the molybdenum disulfide layer to the tungsten disulfide layer.
Refer to the steady state PL spectrum intensity diagram of the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction for different times of plasma treatment shown in fig. 4. The influence of different defect densities on the energy transfer of the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction can be obtained. Defects may promote more energy transfer.
The PL spectra of the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction with different processing time are compared, the PL intensity of tungsten disulfide in the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction is found to be increased along with the increase of plasma processing time, and the energy transfer in the defect enhanced molybdenum disulfide/boron nitride/tungsten disulfide heterojunction can be obtained, and in a certain range, the energy transfer efficiency is increased along with the increase of defect density.
Referring to the fluorescence lifetime imaging graph of the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction for various times with plasma treatment as shown in fig. 5. The influence of defects with different densities on the energy transfer of the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction can be obtained. Defects can accelerate more energy transfer and exciton recombination time is shortened.
The fluorescence lifetime imaging graph can intuitively monitor that the exciton decay time of the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction region is reduced along with the increase of plasma treatment time, so that defects can be obtained to accelerate energy transfer in the molybdenum disulfide/boron nitride/tungsten disulfide heterojunction, and the energy transfer rate is increased along with the increase of defect density within a certain range.
In some embodiments provided herein, detecting the heterojunction by steady state fluorescence spectroscopy techniques comprises: the heterojunction is detected by confocal raman spectroscopy. Such as a LabRAM HR Evolution-type confocal raman spectrometer.
In some embodiments provided by the present invention, detecting a heterojunction by a transient fluorescence lifetime imaging technique comprises: the heterojunction was detected by an inverted fluorescence microscope with time-dependent single photon counting. For example, an inverted fluorescence microscope model IX83 manufactured by Olympus can be selected.
In some embodiments provided by the present invention, after obtaining the fluorescence lifetime decay curves of the heterojunction for the respective processing times, further comprising:
Fitting a fluorescence lifetime decay curve to obtain exciton lifetime and average exciton lifetime;
The energy transfer rate and energy transfer efficiency were calculated from the average exciton lifetime.
Specifically, a double exponential function may be used:
Fluorescence lifetime decay curves were fitted to obtain a 1、A2、τ1 and τ 2. Where a 1 and a 2 are normalized amplitude components, τ 1 and τ 2 are exciton lifetimes.
It should be noted that the step of fitting the fluorescence lifetime decay curve may be performed by an inverted fluorescence microscope, where both a 1、A2、τ1 and τ 2 may be obtained from the inverted fluorescence microscope.
According to A 1、A2、τ1 and τ 2, and based on the lifetime formula:
τav＝A1τ1+A2τ2
The average exciton lifetime τ av can be obtained.
The average exciton lifetime τ heter of the heterojunction can be calculated from the lifetime formula described above, and reading the normalized amplitude component and exciton lifetime in the heterojunction from an inverted fluorescence microscope. The average exciton lifetime τ donor of the donor can be calculated from the lifetime formula described above, and reading the normalized amplitude component and exciton lifetime of the donor from the inverted fluorescence microscope. For molybdenum disulfide/boron nitride/tungsten disulfide heterojunction, the donor refers to the molybdenum disulfide layer. As shown in fig. 5, τ donor can also be acquired directly in the region of the molybdenum disulfide layer in the fluorescence lifetime imaging map generated by an inverted fluorescence microscope. Namely, after selecting a molybdenum disulfide layer region in a fluorescence lifetime imaging diagram, carrying out deconvolution (considering instrument response) and double-index fitting, and then calculating the average exciton lifetime to obtain τ donor.τheter, wherein τ donor.τheter can also be directly obtained in a molybdenum disulfide/boron nitride/tungsten disulfide heterojunction region in the fluorescence lifetime imaging diagram generated by an inverted fluorescence microscope. Namely, after selecting a molybdenum disulfide/boron nitride/tungsten disulfide heterojunction region in a fluorescence lifetime imaging diagram, carrying out deconvolution (considering instrument response) and double-exponential fitting, and then obtaining tau heter through calculation of average exciton lifetime.
According to τ heter and τ donor, the energy transfer rate formula is based on:
1/τET＝1/τheter-1/τdonor
The energy transfer rate can be calculated.
Based on the energy transfer efficiency formula, τ heter and τ donor:
ηET＝1-τheter/τdonor
The energy transfer efficiency can be calculated.
The energy transfer rate and the energy transfer efficiency of the heterojunction with different processing time are compared, and the influence of defects with different densities in the heterojunction on the energy transfer rate and the energy transfer efficiency can be quantitatively obtained.
Referring to the graph of energy transfer rate and energy transfer efficiency as a function of plasma processing time shown in fig. 7. The energy transfer efficiency and the energy transfer rate increase with an increase in defect density.
In some embodiments of the present invention, before performing the plasma treatment on the heterojunction several times, the method further comprises:
And respectively checking the lower layer transition metal sulfide and the upper layer transition metal sulfide through the characteristic peak value and the characteristic peak value of the steady-state Raman spectrum. Since different transition metal sulfides exhibit different characteristic peaks and characteristic peak differences, sample information for transition metal sulfides can be verified by steady state raman spectroscopy.
Therefore, the sample information of the lower transition metal sulfide and the upper transition metal sulfide adopted in the test process can be checked, and the error materials are avoided.
Further, steady state raman spectra may also be acquired using the confocal raman spectrometer described above.
In some embodiments of the present invention, before performing the plasma treatment on the heterojunction several times, the method further comprises:
And respectively detecting the thicknesses of the lower transition metal sulfide, the upper transition metal sulfide and the isolating layer of the heterojunction to determine the number of layers of the lower transition metal sulfide, the upper transition metal sulfide and the isolating layer.
Therefore, the number of layers of the lower transition metal sulfide, the upper transition metal sulfide and the isolation layer adopted in the test process can be checked to be correct. Further, atomic force microscopy can be used to test the thickness of the lower transition metal sulfide, the upper transition metal sulfide, and the spacer layer of the heterojunction.
In some embodiments provided by the present invention, the plasma treatment comprises: the heterojunction is placed in an oxygen plasma chamber for processing. For example, the sample may be processed in a 10W oxygen plasma chamber at a radio frequency of 13.56 MHz.
Further, each time the heterojunction is plasma treated, the time is greater than zero seconds, but is actually additive to the defects introduced by the heterojunction. For example, when the first time for performing the plasma treatment on the heterojunction is 10 seconds and the second time for performing the plasma treatment on the heterojunction is 5 seconds after performing the correlation detection, the time for performing the plasma treatment on the heterojunction is substantially accumulated for 15 seconds after the second time treatment is completed. Longer processing times are indicative of greater defect density within the heterojunction.
Optionally, in order to improve the accuracy of the test, after each time the heterojunction is subjected to plasma treatment, the heterojunction is detected within 5min, and after the test is finished, the heterojunction is put into the plasma cavity again for the next time of plasma treatment, so that the next detection is to be performed.
For example, the time for heterojunction plasma treatment can be set to 0s,10s,20s,30s,35s,40s,48s,56s,64s,72s. The previous three treatments are exemplified, the first treatment time being 0s. The second treatment time is 10s, and the first treatment time is accumulated to be treated for 10s. The third treatment time is 10s and the previous two treatments are accumulated to treat 20s.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1.一种测试二维材料异质结中缺陷影响能量转移的方法，其特征在于，包括：1. A method for testing the effect of defects on energy transfer in a two-dimensional material heterojunction, comprising: 由下至上依次放置单层的下层过渡金属硫化物、隔离层及单层的上层过渡金属硫化物以制备异质结；Placing a single layer of lower transition metal sulfide, an isolation layer, and a single layer of upper transition metal sulfide in order from bottom to top to prepare a heterojunction; 对所述异质结进行若干次等离子体处理，以向所述异质结引入缺陷，且第一次处理时间为0秒；Performing plasma treatment on the heterojunction several times to introduce defects into the heterojunction, wherein the first treatment time is 0 seconds; 每次对所述异质结进行等离子体处理后，均对所述异质结进行检测；After the heterojunction is subjected to plasma treatment each time, the heterojunction is tested; 其中，对所述异质结进行检测，包括：通过稳态荧光光谱技术检测所述异质结，以获得相应处理时间的所述异质结的PL谱；将等离子处理时间为0秒的所述异质结的PL谱分别与单层的下层过渡金属硫化物的PL谱以及单层的上层过渡金属硫化物的PL谱比较，并基于单层的下层过渡金属硫化物的PL强度与所述异质结中的下层过渡金属硫化物的PL强度的大小关系，以及单层的上层过渡金属硫化物的PL强度与所述异质结中上层过渡金属硫化物的PL强度的大小关系，判断无缺陷的所述异质结是否存在能量转移过程。Among them, the heterojunction is detected, including: detecting the heterojunction by steady-state fluorescence spectroscopy technology to obtain a PL spectrum of the heterojunction with a corresponding treatment time; comparing the PL spectrum of the heterojunction with a plasma treatment time of 0 seconds with the PL spectrum of a monolayer lower transition metal sulfide and the PL spectrum of a monolayer upper transition metal sulfide, respectively, and based on the magnitude relationship between the PL intensity of the monolayer lower transition metal sulfide and the PL intensity of the lower transition metal sulfide in the heterojunction, and the magnitude relationship between the PL intensity of the monolayer upper transition metal sulfide and the PL intensity of the upper transition metal sulfide in the heterojunction, it is judged whether the defect-free heterojunction has an energy transfer process. 2.根据权利要求1所述的测试二维材料异质结中缺陷影响能量转移的方法，其特征在于，所述对所述异质结进行检测，包括：2. The method for testing the effect of defects on energy transfer in a two-dimensional material heterojunction according to claim 1, wherein the detecting the heterojunction comprises: 通过瞬态荧光寿命成像技术检测所述异质结，以获得相应处理时间的所述异质结的荧光寿命成像图和荧光寿命衰减曲线。The heterojunction is detected by transient fluorescence lifetime imaging technology to obtain a fluorescence lifetime imaging diagram and a fluorescence lifetime decay curve of the heterojunction at a corresponding processing time. 3.根据权利要求2所述的测试二维材料异质结中缺陷影响能量转移的方法，其特征在于，在所述获得相应处理时间的所述异质结的荧光寿命衰减曲线之后，还包括：3. The method for testing the effect of defects on energy transfer in a two-dimensional material heterojunction according to claim 2, characterized in that after obtaining the fluorescence lifetime decay curve of the heterojunction at the corresponding processing time, it further comprises: 拟合所述荧光寿命衰减曲线，以获得激子寿命和平均激子寿命；Fitting the fluorescence lifetime decay curve to obtain the exciton lifetime and the average exciton lifetime; 根据所述平均激子寿命计算能量转移速率和能量转移效率。The energy transfer rate and energy transfer efficiency are calculated based on the average exciton lifetime. 4.根据权利要求1所述的测试二维材料异质结中缺陷影响能量转移的方法，其特征在于，在所述对所述异质结进行若干次等离子体处理之前，还包括：4. The method for testing the effect of defects on energy transfer in a two-dimensional material heterojunction according to claim 1, characterized in that before the heterojunction is subjected to a plurality of plasma treatments, the method further comprises: 通过稳态拉曼光谱特征峰值及特征峰值差分别校验所述下层过渡金属硫化物和所述上层过渡金属硫化物。The lower transition metal sulfide and the upper transition metal sulfide are respectively verified by the characteristic peak value and the characteristic peak value difference of the steady-state Raman spectrum. 5.根据权利要求1所述的测试二维材料异质结中缺陷影响能量转移的方法，其特征在于，在所述对所述异质结进行若干次等离子体处理之前，还包括：5. The method for testing the effect of defects on energy transfer in a two-dimensional material heterojunction according to claim 1, characterized in that before the heterojunction is subjected to a plurality of plasma treatments, the method further comprises: 分别检测所述异质结的所述下层过渡金属硫化物、所述上层过渡金属硫化物及所述隔离层的厚度，以确定所述下层过渡金属硫化物、所述上层过渡金属硫化物及所述隔离层的层数。The thicknesses of the lower transition metal sulfide, the upper transition metal sulfide and the isolation layer of the heterojunction are detected respectively to determine the number of layers of the lower transition metal sulfide, the upper transition metal sulfide and the isolation layer. 6.根据权利要求1所述的测试二维材料异质结中缺陷影响能量转移的方法，其特征在于，所述隔离层包括若干层氮化硼。6. The method for testing the effect of defects on energy transfer in a two-dimensional material heterojunction according to claim 1, wherein the isolation layer comprises several layers of boron nitride. 7.根据权利要求1所述的测试二维材料异质结中缺陷影响能量转移的方法，其特征在于，所述下层过渡金属硫化物为二硫化钨，所述上层过渡金属硫化物为二硫化钼。7. The method for testing the effect of defects on energy transfer in a two-dimensional material heterojunction according to claim 1, wherein the lower transition metal sulfide layer is tungsten disulfide, and the upper transition metal sulfide layer is molybdenum disulfide. 8.根据权利要求1所述的测试二维材料异质结中缺陷影响能量转移的方法，其特征在于，所述等离子体处理包括：8. The method for testing the effect of defects on energy transfer in a two-dimensional material heterojunction according to claim 1, wherein the plasma treatment comprises: 将所述异质结置入氧等离子体腔中进行处理。The heterojunction is placed in an oxygen plasma chamber for treatment. 9.根据权利要求2所述的测试二维材料异质结中缺陷影响能量转移的方法，其特征在于，所述通过瞬态荧光寿命成像技术检测所述异质结包括：9. The method for testing the effect of defects on energy transfer in a two-dimensional material heterojunction according to claim 2, wherein detecting the heterojunction by transient fluorescence lifetime imaging technology comprises: 通过时间相关单光子计数的倒置荧光显微镜检测所述异质结。The heterojunctions were examined by inverted fluorescence microscopy with time-correlated single photon counting. 10.根据权利要求1所述的测试二维材料异质结中缺陷影响能量转移的方法，其特征在于，所述通过稳态荧光光谱技术检测所述异质结包括：10. The method for testing the effect of defects on energy transfer in a two-dimensional material heterojunction according to claim 1, wherein detecting the heterojunction by steady-state fluorescence spectroscopy comprises: 通过共聚焦拉曼光谱仪检测所述异质结。The heterojunction was examined by confocal Raman spectroscopy.
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