CN113594145B - Preparation method of light source - Google Patents
Preparation method of light source Download PDFInfo
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- CN113594145B CN113594145B CN202110877932.4A CN202110877932A CN113594145B CN 113594145 B CN113594145 B CN 113594145B CN 202110877932 A CN202110877932 A CN 202110877932A CN 113594145 B CN113594145 B CN 113594145B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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Abstract
The invention relates to a preparation method of a light source and a lamp manufactured by the light source, wherein the method comprises the following steps: providing a first semiconductor chip with an emission peak wavelength of 360-490nm for exciting fluorescent powder with the emission peak wavelength in the range of 410-900nm to form a first light emitting unit with a white light color temperature range, wherein the spectrum radiance of the first light emitting unit in the range of 360-800 nm is changed in a way of gradually increasing to a middle part wave band and then decreasing, the maximum peak point of the spectrum energy of the first light emitting unit in the range of 400-480nm is less than or equal to the minimum peak point of the spectrum energy of the first light emitting unit in the range of 640-780nm, and the spectrum of the first light emitting unit comprises at least two dividing points for distinguishing the energy fluctuation degree and/or the distribution capacity, wherein the shape of the spectrum at two sides of the dividing point is at least: in the first interval on both sides of the dividing point, the ray which is parallel to the wave band axis and is emitted by any point on the energy spectrum line can form a closed area together with the energy spectrum line and the ray passing through the dividing point.
Description
Technical Field
The invention relates to the technical field of photo-biological effects, in particular to a preparation method of a light source and a lamp manufactured by the light source.
Background
LEDs are widely used in the field of lighting as new light sources, but with the improvement of life quality of people, LED light sources are no longer simply pursued with high luminous efficiency to meet basic lighting requirements, and more pursued with influence on human health, visual experience, working efficiency and the like. Most of the commercial LED light sources have low color rendering indexes, influence of the light sources on human health is not considered too much, and particularly, influence of the light sources on non-visual biological effects of people is avoided, and certain harm is generated on human health after the LED light sources are irradiated for a long time.
CN111140774a discloses a novel light source capable of inhibiting excessive growth of eye axis, its simulation method and lamp, and the spectrum of the light source is 360nm-800nm continuous spectrum. According to the light source simulation method, the LED chips or the chip combinations capable of emitting light rays with different wavelengths are adopted to excite the fluorescent powder to emit light, or the LED chips or the chip combinations capable of emitting light rays with different wavelengths are adopted to emit light, so that the light source capable of emitting continuous spectrum of 360nm-800nm is formed. The specific artificial novel spectrum of the light source can effectively inhibit excessive growth of the eye axis, thereby playing a role in preventing and reducing the incidence rate of myopia.
However, the above-mentioned prior art does not provide a specific production method for the light source or the device thereof in any of the embodiments, so that the operation guidance for mass production is not possible, and the light source with a full wavelength range still has technical problems of uneven light emission color, weak light emission intensity, and the like. Secondly, the semiconductor chip or the fluorescent powder is arranged in a mode based on the semiconductor chip or the fluorescent powder, and when the corresponding light source is produced, the production process is relatively complex, and the design production cost is relatively high. Thus, there remains a need in the art for at least one or several aspects of improvements.
Furthermore, there are differences in one aspect due to understanding to those skilled in the art; on the other hand, as the inventors studied numerous documents and patents while the present invention was made, the text is not limited to details and contents of all that are listed, but it is by no means the present invention does not have these prior art features, the present invention has all the prior art features, and the applicant remains in the background art to which the rights of the related prior art are added.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a preparation method of a light source, which aims at solving at least one or more technical problems existing in the prior art.
It should be understood that, in the present invention, the first interval refers to an interval in any spectrum interval, where at least part of the spectrum interval has only a single change or two end points of a single cycle interval, for example, the single change refers to that the spectrum energy corresponding to the spectrum interval has only a monotonic rising or monotonic falling trend; a single cycle means that there is only a single trend of rising followed by falling and/or rising followed by falling of the corresponding spectral energy within the spectral interval, and no trend of change such as rising followed by falling followed by rising.
In order to achieve the above object, the present invention provides a method for manufacturing a light source, the method comprising exciting fluorescent powder having an emission peak wavelength within a range of 410 to 900nm by using a first semiconductor chip having an emission peak wavelength of 360 to 490nm to form a first light emitting unit having a white color temperature range. Aiming at the problem of uneven luminescence of the existing light source, the semiconductor chip capable of emitting blue-violet light with the wavelength of 360-490nm is utilized to excite the fluorescent powder positioned in the visible light range of 410-900nm so as to compound a white light emitting unit, the light intensity ratios corresponding to different wavebands of the white light emitting unit are different, the light emitting unit with the white light color temperature is compounded through different ratios or intensity rays, and the light source prepared by the light emitting unit can emit uniform and stable luminescence lines and has proper luminescence intensity. In particular, the light source of the present invention has a good lighting effect particularly when applied to daily lighting of a person or growth lighting of plants. For example, when the desk lamp is used for assisting the life and work of a human, the damage of corresponding light to the human eye can be reduced because the proportion of the light intensity of blue-violet light is relatively low, because of the light radiation effect of blue light, because blue light pigment is different from other types of pigments, photoreceptor cells which receive blue light pigment in the human body cannot reject to receive new blue light photons because the human eye does not recover in a visual cycle, conversely, the photoreceptor cells can continuously receive blue light photons, thereby leading to the increase of human eye retina tissues such as lipofuscin, generating oxygen free radicals, further leading to the inactivation of lysosomes with cell digestion, autophagy and dissolution in the human body, further leading to the aggravation of the number of dead photoreceptor cells, seriously affecting the vision of the human body and even leading to the blindness of the human body; secondly, the non-visual effect of the blue light has a certain influence on daily work and life of people, for example, physiological indexes such as sleep and heart rate of people can be influenced, and even the cognition or learning ability of people in work can be influenced; in addition, when a certain light intensity is continuously irradiated to eyes, a heat radiation effect is generated, and the heat radiation effect can cause potential unpredictable damage to eyes. On the other hand, when the light-emitting unit is used for illuminating the growth of plants, the wavelength range corresponding to red light and blue light is the optimal interval for photosynthesis of the plants, wherein the blue light is mainly used for promoting the growth of leaves and stems of the plants, the red light is used for promoting the flowering and fruiting of the plants, the spectral energy corresponding to the red light area and the blue-violet light area of the light-emitting unit is different from each other, the high proportion of the red light can effectively promote the generation of chlorophyll of the plants and secrete hormones for inhibiting chlorophyll decomposition so as to improve photosynthesis to help the plants accumulate carbohydrates and promote the absorption and metabolism of the chlorophyll, and meanwhile, the light-emitting spectrum corresponding to each wavelength band of the light-emitting unit has continuity, so that the light-emitting unit can meet the requirements of light rays with different wavelengths and luminous colors under the whole growth period of the plants, for example, the proper green light can delay the senescence of leaves and the proper violet light is favorable for the accumulation of the hormones such as anthocyanin in certain plants.
Preferably, the spectral radiance of the first light emitting unit in the wavelength range of 360-800 nm is changed in such a manner as to gradually increase to the middle partial band and then decrease. According to the invention, the spectrum energy value corresponding to the blue-violet light in the light source is the lowest, the spectrum energy is increased along with the change of the emission wavelength until reaching the corresponding energy peak value when corresponding to the wavelength range of the red light, and the light with different luminous wavelengths is compounded in different proportions to form a luminous unit which can emit uniform and stable light with continuous luminous characteristics; for human body, the lamp meets the basic lighting requirement for daily work, life and study of people, and simultaneously reduces the harm of blue-violet light to human eyes and human body.
Preferably, the maximum peak point of the spectral energy of the first light emitting unit in the wavelength range of 400-480nm is smaller than or equal to the minimum peak point of the spectral energy of the first light emitting unit in the wavelength range of 640-780 nm.
Preferably, the spectrum of the first light emitting unit comprises at least two division points for distinguishing the degree of energy fluctuation and/or the distribution capacity, wherein the shape of the spectrum on both sides of the division points is at least: in the first interval on both sides of the dividing point, the ray parallel to the wave band axis emitted by any point on the energy spectrum line can form a closed area with the energy spectrum line and the ray passing through the dividing point and perpendicular to the wave band axis. The areas of the closed areas adjacent to each other are different, namely the corresponding spectral energy in the adjacent first intervals is different, the light rays with different energy ratios and different luminous colors are compounded to form a light-emitting unit with white color temperature, and meanwhile, the peak emission wavelength of the light rays with specific excitation wavelength is not changed along with the increase of the concentration of the substances, and the luminous intensity is increased, so that the color temperature or the brightness and the like of a light source can be changed by changing the proportion of a semiconductor chip or fluorescent powder in the light-emitting unit, the color rendering index can be changed, and the light source has higher color rendering index, has small color difference, is convenient for people to distinguish objects irradiated by the light source, and can slow down visual fatigue of human eyes, so that the field of vision is clearer; in particular, the light source formed by the light emitting units is provided with at least continuous and uniform light emitting characteristics and with appropriate light emitting intensity based on the closed areas different from each other.
Preferably, a method for preparing a light source, the method comprising: and exciting fluorescent powder with emission peak wavelength in the range of 410-900nm by using the first semiconductor chip with the emission peak wavelength of 360-490nm and the second semiconductor chip with the emission wavelength of 700-800nm after being connected in parallel or in series so as to form the second light-emitting unit with the white light color temperature range.
Preferably, the spectral radiance of the second light emitting unit in the wavelength range of 360-800 nm is changed in such a manner as to gradually increase to the middle partial band and then decrease.
Preferably, the maximum peak point of the spectral energy of the second light emitting unit in the wavelength range of 400-480nm is less than or equal to the minimum peak point of the spectral energy of the second light emitting unit in the wavelength range of 640-780 nm.
Preferably, the spectrum of the second light emitting unit comprises at least two dividing points for distinguishing the degree of energy fluctuation and/or the distribution capacity, wherein the shape of the spectrum on both sides of the dividing points is at least: at least two closed areas with different areas can be formed in a spectrum interval formed by the axis of any partition point except the boundary end point of the energy spectrum line and the partition points on the two adjacent sides and the energy spectrum line.
Preferably, the spectral radiance of the first light-emitting unit and the second light-emitting unit in the wavelength range of 400-480nm accounts for 2% -30% of the total spectral radiance.
Preferably, the spectral radiance of the first light-emitting unit and the second light-emitting unit in the wavelength range of 640-780nm accounts for 30% -90% of the total spectral radiance.
Preferably, the spectrum comprises at least six emission peaks in the wavelength range of 360nm to 800nm.
Preferably, the peak intensity of the emission peak having a spectrum in the wavelength range of 640nm to 755nm is maximum, the peak intensity of the emission peak having a spectrum in the wavelength range of 360nm to 480nm is minimum, and the ratio of the peak intensities of the emission peaks is 1% to 50%.
Preferably, the spectrum comprises at least two emission peaks in the wavelength range of 640nm to 780 nm.
Preferably, the emission peak of the spectrum in the wavelength range of 640nm to 755nm is the same as the maximum peak of the spectral radiance corresponding to each emission peak in the wavelength range of 720nm to 780 nm.
Preferably, the minimum peak value of the spectral radiance of the emission peak having a spectrum in the wavelength range of 640nm to 755nm is smaller than the minimum peak value of the spectral radiance of the emission peak having a spectrum in the wavelength range of 720nm to 780 nm.
Preferably, at least one first light emitting unit, second light emitting unit and/or second semiconductor chip is connected to a specific groove on the surface of an adjacent chip and/or board by bonding wires in a gap combination, and is fixed in the board mounting area by a die bonding material and/or a sealing material, and a light homogenizing device capable of transmitting light in a wavelength range of more than 360nm is covered, so that a light source capable of emitting light in a continuous spectrum and radiance is formed.
Preferably, the method for preparing the light source comprises glue preparation, glue dispensing and baking.
Preferably, the glue preparation means that the silica gel and the fluorescent powder which are mixed based on the mixture ratio obtained by the test are fully mixed by using a stirring device and/or manual stirring in a stirring and vacuumizing mode so as to be at least in a uniform bubble-free state,
preferably, the dispensing means to dispense a quantitative amount of glue for sealing the chip and/or the light emitting unit at the corresponding position of the bracket which is baked and dehumidified in advance according to the material requirement based on the judgment of the drift degree of the color temperature of the light source,
preferably, the semi-finished product light source after dispensing is baked for 30min at 100 ℃, and then baked for 3h at 150 ℃.
Preferably, the phosphor has a preferred emission peak wavelength of 500-600nm, 600-700nm, and/or 700-800nm.
Preferably, the first semiconductor chip preferably has an emission peak wavelength of 380-470nm.
Preferably, the invention also provides a lamp, which comprises a power supply, an LED light source, an optical lens, a heat dissipation main body and a lamp shade, wherein the LED light source is formed by a first light-emitting unit, a second light-emitting unit and a second semiconductor chip in a permutation and combination mode.
Drawings
FIG. 1 is a schematic view of a preferred construction of the present invention;
FIG. 2 is a schematic diagram of a preferred simulation of the light source of the present invention;
FIG. 3 is a schematic diagram of a preferred simulation of the light source of the present invention;
FIG. 4 is a schematic diagram of a preferred simulation of the light source of the present invention;
FIG. 5 is a schematic illustration of a preferred simulation of the light source of the present invention;
FIG. 6 is a schematic diagram of a preferred simulation of the light source of the present invention;
fig. 7 is a schematic view of a preferred spectral energy distribution of a light source according to the present invention.
List of reference numerals
1: plate body 2: the first semiconductor chip 3: second semiconductor chip
4: fluorescent powder 5: light equalizing device X: continuous spectrum light
a: division point R1:0.2 R2:0.4
R3：0.6 R4：0.8 R5：1.0
W1：360nm W2：400nm W3：480nm
W4：640nm W5：720nm W6：755nm
W7：780nm W8：800nm
Detailed Description
The details are described below in connection with fig. 1-7.
In the description of the present invention, it will also be understood that unless explicitly specified and limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact by additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The invention provides a preparation method of a light source, in particular to a simulation method schematic diagram of a preferred embodiment of the light source of the invention shown in fig. 1, wherein the light source can comprise one of the following components: plate 1, first semiconductor chip 2, second semiconductor chip 3, phosphor 4, and light equalizing device 5. The light source formed by the above components can realize full spectrum emission.
According to a preferred embodiment, the types of the plate body 1 include, but are not limited to, ceramic substrates, metal substrates, and ceramic metal composite substrates. Further, the metal substrate includes, but is not limited to, a copper substrate, an aluminum substrate, a tungsten-copper alloy substrate, a tungsten-aluminum alloy substrate, a copper-silver alloy substrate, and the like. The ceramic substrate includes, but is not limited to, aluminum oxide substrate, beryllium oxide substrate, aluminum nitride substrate, silicon nitride substrate, alN/SiC composite substrate, alN/BeO composite substrate, al 2 O 3 An AlN composite substrate, etc.
According to a preferred embodiment, the emission wavelength of the first semiconductor chip 2 is about 360-490nm. Preferably, the light emission wavelength of the first semiconductor chip 2 is about 380 to 470nm. The emission wavelength of the second semiconductor chip 3 is about 700-800nm.
According to a preferred embodiment, the emission wavelength of the phosphor 4 is about 419-900nm. Further, the phosphor 4 includes, but is not limited to, a blue phosphor, a green phosphor, a red phosphor, or a combination thereof. Preferred emission wavelengths for phosphor 4 include, but are not limited to, 500-570nm, 600-700nm, and 700-800nm.
According to a preferred embodiment shown in fig. 1 and 2, the phosphor 4 having a peak wavelength of 410-900nm is excited with the first semiconductor chip 2 having an emission peak wavelength of 360-490nm to form a first light emitting unit having a color temperature of 2700k±300K. Further, the light emitting unit and the second semiconductor chip 3 with the emission peak wavelength of 700-800nm are combined to emit light, namely, the first light emitting unit and the second semiconductor chip 3 are combined and mounted on the board body 1, and then a light equalizing device 5 capable of transmitting light with more than 360nm is adopted as a lampshade to realize light emission conforming to continuous spectrum and radiance, so that the light source is formed.
According to a preferred embodiment shown in fig. 1 and 3, a first semiconductor chip 2 having an emission peak wavelength of 360-490nm is connected in parallel and/or in series with a second semiconductor chip 3 having an emission peak wavelength of 700-800nm, and then a second light emitting unit having a color temperature of 2700k±300K is formed by exciting a phosphor 4 having a peak wavelength of 410-900 nm. Further, the second light emitting unit and the second semiconductor chip 3 with emission peak wavelength of 700-800nm are combined to emit light, namely, the second light emitting unit and the second semiconductor chip 3 are combined and mounted on the board body 1, and then a light uniformizing device 5 capable of transmitting light with more than 360nm is adopted as a lampshade to realize light emission conforming to continuous spectrum and radiance, so that the light source is formed.
According to a preferred embodiment shown in fig. 1 and 4, a first semiconductor chip 2 having an emission peak wavelength of 360-490nm is connected in parallel and/or in series with a second semiconductor chip 3 having an emission peak wavelength of 700-800nm, and a phosphor 4 having a peak wavelength of 410-900nm is excited thereby to form a second light emitting unit having a color temperature of 2700k±300K. Further, the second light emitting units are assembled and mounted on the plate body 1, and then a light equalizing device 5 capable of transmitting light with a wavelength of more than 360nm is adopted as a lampshade, so that light rays conforming to continuous spectrum and radiance are emitted, and the light source is formed.
According to a preferred embodiment shown in fig. 1 and 5, a first semiconductor chip 2 having an emission peak wavelength of 360-490nm is used to excite a phosphor 4 having a peak wavelength of 410-900nm to form a first light emitting unit having a color temperature of 2700k±300K, and the first semiconductor chip 2 having an emission peak wavelength of 360-490nm is connected in parallel and/or in series with a second semiconductor chip 3 having an emission peak wavelength of 700-800nm, and then the phosphor 4 having a peak wavelength of 410-900nm is excited to form a second light emitting unit having a color temperature of 2700k±300K. Further, the first light emitting unit and the second light emitting unit are assembled and mounted on the board body 1, and then the light uniformizing device 5 capable of transmitting light with a wavelength of more than 360nm is adopted as a lampshade, so that light rays conforming to continuous spectrum and radiance are emitted, and the light source is formed.
According to a preferred embodiment shown in fig. 1 and 6, the phosphor 4 having a peak wavelength of 410-900nm is excited by the first semiconductor chip 2 having an emission peak wavelength of 360-490nm to form a first light emitting unit having a color temperature of 2700k±300K. Further, the first light emitting units are assembled and mounted on the board body 1, and then a light equalizing device 5 capable of transmitting light with a wavelength of more than 360nm is adopted as a lampshade, so that light rays conforming to continuous spectrum and radiance are emitted, and the light source is formed.
According to a preferred embodiment, the LED lighting unit includes, but is not limited to, the following combinations:
description of the preferred embodiments
The combination is carried out by utilizing the light-emitting units 1/2/5, wherein the peak intensity ratio of each light-emitting unit combination is 1:2:6= (2-18): 1: (2-18);
second embodiment
The combination is carried out by utilizing the light-emitting units 1/3, wherein the peak intensity ratio of each light-emitting unit combination is 1:3= (2-18): 1, a step of;
description of the preferred embodiments
The combination is carried out by utilizing the light-emitting units 3/5, wherein the peak intensity ratio of each light-emitting unit combination is 1:2:4= (2-18): 1: (2-18).
According to a preferred embodiment, the above embodiment integrates the light of each wavelength band into a complete continuous spectrum (360 nm-800 nm) of specific energy distribution.
According to a preferred embodiment, the encapsulation of the LED is performed in such a way that carriers are injected to be converted into light energy to be emitted outwards, unlike conventional semiconductor packages. Specifically, the LED light source in this embodiment mainly adopts an integrated package structure, and of course, other forms may also be adopted. Further, an integrated package structure and a process are taken as an example.
According to a preferred embodiment, the basic structure of the integrated LED light source generally includes a substrate (board body 1), LED chips (first semiconductor chip 2, second semiconductor chip 3), and an encapsulation material, etc. Preferably, the foregoing copper substrate is exemplified as it is mainly composed of a copper-clad layer, an insulating layer, and a metal substrate layer. Further, in mounting the LED chips (the first semiconductor chip 2, the second semiconductor chip 3), the insulating layer on the surface of the mounting region of the substrate may be removed to form a reflecting surface in at least a part of the region, and the light reflecting capability of the reflecting surface may be improved by such means as plating, thereby achieving thermoelectric separation of the packaged light source while reducing the overall thermal resistance of the substrate.
According to a preferred embodiment, the LED chips (the first semiconductor chip 2, the second semiconductor chip 3) may be generally closely adhered to the blue film with a certain arrangement gap. In addition, a die-expanding operation is generally required for the blue film to facilitate pick-up and positioning when packaging the LED chips (the first semiconductor chip 2, the second semiconductor chip 3). Further, the blue film is uniformly stretched by the expanding device, so that the closely arranged LED chips (the first semiconductor chip 2 and the second semiconductor chip 3) can be effectively dispersed, the adhesion of the blue film is obviously reduced, and meanwhile, the blue film can be supported by the crystal expanding operation. Preferably, the LED chips (the first semiconductor chip 2, the second semiconductor chip 3) after the die expansion have a clearer boundary, the distance between the chips is increased, and the difficulty of recognition and/or pickup is reduced.
According to a preferred embodiment, the die bond adhesive is required when mounting the LED chips to a specific mounting area of the substrate (board body 1) in a certain arrangement. Specific steps may include dispensing, chip pick-up, chip placement, etc.
According to a preferred embodiment, the sealing glue is prepared by dispensing fluorescent glue into a bracket cup bowl for bearing the first semiconductor chip 2 and/or the second semiconductor chip 3, so that physical protection of the chip and generation of characteristic light after the fluorescent powder is excited by the chip light are realized.
According to a preferred embodiment, the glue is dispensed in advance prior to the dispensing operation. Specifically, the balance is placed horizontally when glue is dispensed, vibration is not allowed when the balance is used, and air flow is reduced as much as possible. Mixing the silica gel AB component and the fluorescent powder according to the proportion determined by an engineering test, wherein the powder weight is required to be accurate to a thousandth position, and the glue weight is required to be accurate to a percentile position. And secondly, stirring and vacuumizing by using a stirring and deaerating machine, so that the components are fully mixed without foaming. Preferably, because the specific gravity of the fluorescent powder is large, the equipment cannot be completely and uniformly stirred, the fluorescent powder is manually stirred for 10 minutes after being stirred and vacuumized by a stirring and defoaming machine, and the fluorescent powder is placed into the stirring and defoaming machine to rotate for 10 seconds after being stirred for eliminating bubbles.
According to a preferred embodiment, before the dispensing operation, the bracket is put into an oven according to the material requirement, and is baked and dehumidified according to the requirement of 90 ℃/30 min. And pre-judging the drift degree of the color temperature of the light source, and adjusting the dispensing quantity. The operation of the equipment must be strictly in accordance with the operating standard so that the equipment can run smoothly. Before the equipment operates, the position of the dispensing head is regulated, and the dispensing uniformity is affected. When the equipment operates, the dispensing heads are cleaned every 3 brackets, and the dispensing uniformity is prevented from being influenced by the adhesive of the dispensing heads. Every half of clamping material (10 brackets) needs to remove the packaging material in the equipment, and the packaging material is added into the equipment after being stirred again, so that the operation of nodulation can be performed again. After dispensing is completed, the operation table is cleaned. When the ultrasonic cleaner is used for cleaning the dispensing head accessory, the sealing gasket is required to be quickly cleaned and taken out, and long-time soaking cleaning is avoided. All the parts must be cleaned, so that the solidification blocking phenomenon is avoided.
According to a preferred embodiment, the baking time must be controlled after dispensing, otherwise the phosphor powder is unevenly deposited, and the baking should be performed strictly according to the baking conditions of the materials, taking care that the baking conditions of different materials are not the same. Preferably, the baking manner in this embodiment is: baking at 100deg.C for 30min, and baking at 150deg.C for 3 hr.
According to a preferred embodiment, the spectroscopic taping operation is performed after baking. Specifically, parameters are well adjusted by the material removing machine, and the conditions of incomplete material removing, material clamping, material damage and the like are avoided. And then, according to different light sources and customer requirements, the parameters of the spectroscope are adjusted, and the lamp beads exceeding the standard Bin are also packaged in a classified manner so as to be matched and utilized in the later period. Preferably, parameters of the braiding machine are adjusted at any time according to different light source types, and after the braiding is coiled, attention is paid to clear marks for marking specification types, chip numbers, color temperatures, color rendering indexes, spectrums, production time and the like.
According to a preferred embodiment, at least the wire bonding process is further included in the packaging process of the LED chip. Specifically, the bonding wire process connects the electrode on the surface of the LED chip to the pin of the adjacent chip and/or the substrate through a gold wire to establish a circuit connection between the LED chip and an external system. Further, besides the preceding step of packaging the LED light source, a subsequent plastic packaging operation is required for the detected semi-finished LED light source.
According to a preferred embodiment, the plastic encapsulation operation may include plasma cleaning, preparation of the phosphor 4, encapsulation of the silicone gel, curing of the gel, and the like. In particular, plasma cleaning is accomplished in such a way that the surface to be cleaned is bombarded by ionized positively and/or negatively charged gas atoms or molecules, so that contaminants on its surface can be removed and thus drawn away by the negative pressure device. The greasy dirt and the oxidation layer on the surface of the LED light source after the bonding wires are removed through plasma cleaning, so that the bonding strength among the packaging colloid, the LED chip and the substrate is improved, and meanwhile, the probability of air infiltration along the bonding surface is reduced.
According to a preferred embodiment, the preparation of the phosphor 4 may include fluorescent colloid preparation and colloid coating. Specifically, the colloid is prepared by adding fluorescent powder in a certain proportion or dose into the masterbatch, uniformly stirring and separating colloid residual gas to form colloid with uniform powder dispersion and moderate viscosity. The coating is to quantitatively coat the colloid on the LED chip based on the parameters of the luminous intensity and the peak emission wavelength of the target LED chip so as to form a uniform and regular fluorescent layer.
According to a preferred embodiment, the silica gel package is to cover the transparent colloid with high refractive index on the surface of the functional area of the substrate, on which the LED chip is mounted, after the processes of dispensing, molding, etc. to form a protective layer with high bonding degree and strong impact resistance.
According to a preferred embodiment, the embodiment of the invention also provides a lamp, which is a full spectrum LED lamp and can comprise a power supply, an LED light source, an optical lens, a heat dissipation main body, a lamp shade and the like. Specifically, the LED light source includes the light source according to the present invention formed by the first light emitting unit, the second light emitting unit, and the second semiconductor chip 3 in a permutation and combination manner.
According to a preferred embodiment, the light source for daily and work study lighting should have excellent color rendering properties, low blue light damage, and the closer the spectrum of the light source is to the standard spectrum, the better. Secondly, the light source also satisfies the effective stimulus to the human body, for example, can help to inhibit the secretion of melatonin, and enables the user to pay more attention to improve the work and learning efficiency and the like. Preferably, especially during night illumination, the influence of the light source on the circadian rhythm of the human body should be considered first, so as to ensure that the light source has a low biological influence on the human body. Especially for those users who have a light source requirement, for example, while sleeping, the influence of the light source on the circadian rhythm of the human body should be considered in order to reduce the influence of the light source on melatonin secretion as much as possible and ensure a healthy sleeping environment.
Further, exposure to the appropriate light at the appropriate time is important for the health of the human body. Especially at high power light around 480nm, helps to bring people into the natural circadian cycle. But may lead to a series of health risks if exposed to the wrong light for a long period of time at the wrong time. For example, human exposure to LED light sources with a high light power ratio between 450-500nm can significantly suppress melatonin secretion. Especially if secretion is inhibited for a long time at night, various influences can be generated on human body matrixes, human immunity is reduced, and cancer is caused even if the human body is exposed to an LED light source with high light power ratio between 450 and 500nm for a long time.
The preparation method of the light source and the lamp manufactured by the light source can emit light rays conforming to continuous spectrum and radiance; the color temperature of 2700 K+/-300K is approximately consistent with that of an incandescent light source, so that people feel warm and comfortable; the LED lamp can meet basic lighting requirements, and meanwhile, the proportion occupied by the LED lamp in a blue light wave band is low, so that the damage of blue light to human bodies can be effectively reduced; can provide a healthy and good lighting environment both in the daytime and at night.
It should be noted that the above-described embodiments are exemplary, and that a person skilled in the art, in light of the present disclosure, may devise various solutions that fall within the scope of the present disclosure and fall within the scope of the present disclosure. It should be understood by those skilled in the art that the present description and drawings are illustrative and not limiting to the claims. The scope of the invention is defined by the claims and their equivalents.
Claims (10)
1. A method of manufacturing a light source, the method comprising:
providing a first semiconductor chip (2) having an emission peak wavelength of 360-490nm for exciting a phosphor (4) having an emission peak wavelength in the range of 410-900nm, thereby forming a first light emitting unit having a white light color temperature range, wherein,
the spectrum radiance of the first light-emitting unit in the wavelength range of 360-800 nm is changed in a mode of gradually increasing to the middle part wave band and then decreasing,
the maximum peak point of the spectral energy of the first light-emitting unit in the wavelength range of 400-480nm is less than or equal to the minimum peak point of the spectral energy of the first light-emitting unit in the wavelength range of 640-780nm,
the spectrum of the first light-emitting unit comprises at least two dividing points for distinguishing the energy fluctuation degree and/or the distribution capacity, wherein the shape of the spectrum at two sides of the dividing points is at least:
in a first section on both sides of the dividing point, rays which are parallel to the axis of the wave band and are emitted from any point on the energy spectrum can form a closed area with the energy spectrum and rays which pass through the dividing point and are perpendicular to the axis of the wave band.
2. A method of manufacturing a light source, the method comprising:
providing a first semiconductor chip (2) with an emission peak wavelength of 360-490nm and a second semiconductor chip (3) with an emission peak wavelength of 700-800nm, connecting the first semiconductor chip (2) and the second semiconductor chip (3) in parallel or in series for exciting fluorescent powder (4) with the emission peak wavelength in the range of 410-900nm, thereby forming a second light-emitting unit with a white light color temperature range,
the spectrum radiance of the second light-emitting unit in the wavelength range of 360-800 nm is changed in a mode of gradually increasing to the middle part wave band and then decreasing,
the maximum peak point of the spectral energy of the second light-emitting unit in the wavelength range of 400-480nm is less than or equal to the minimum peak point of the spectral energy of the second light-emitting unit in the wavelength range of 640-780nm,
the spectrum of the second light-emitting unit comprises at least two dividing points for distinguishing the energy fluctuation degree and/or the distribution capacity, wherein the shape of the spectrum at two sides of the dividing points is at least:
at least two closed areas with different areas can be formed in a spectrum interval formed by the axis of any partition point except the boundary end point of the energy spectrum line and the partition points on the two adjacent sides and the energy spectrum line.
3. A method of manufacturing a light source, the method comprising:
providing a first semiconductor chip (2) having an emission peak wavelength of 360-490nm for exciting a phosphor (4) having an emission peak wavelength in the range of 410-900nm to form a first light emitting unit having a white light color temperature range, or
Providing a first semiconductor chip (2) with an emission peak wavelength of 360-490nm and a second semiconductor chip (3) with an emission wavelength of 700-800nm, connecting the first semiconductor chip (2) and the second semiconductor chip (3) in parallel or in series for exciting fluorescent powder (4) with the emission peak wavelength in the range of 410-900nm, thereby forming a second light-emitting unit with a white light color temperature range,
the spectral radiance of the first light-emitting unit and the second light-emitting unit in the wavelength range of 360-800 nm is changed in a mode of gradually increasing to the middle part wave band and then decreasing,
the maximum peak point of the spectral energy of the first light-emitting unit and the second light-emitting unit in the wavelength range of 400-480nm is less than or equal to the minimum peak point of the spectral energy of the first light-emitting unit and the second light-emitting unit in the wavelength range of 640-780nm, wherein,
the spectral radiance of the first light-emitting unit and the second light-emitting unit in the wavelength range of 400-480nm accounts for 2-30% of the total spectral radiance, and
the spectral radiance of the first light-emitting unit and the second light-emitting unit in the wavelength range of 640-780nm accounts for 30-90% of the total spectral radiance.
4. The method according to any of the preceding claims, wherein the spectrum comprises at least six emission peaks in the wavelength range of 360nm to 800nm, wherein,
the peak intensity of the emission peak in the wavelength range of 640 nm-755 nm is maximum, the peak intensity of the emission peak in the wavelength range of 360 nm-480 nm is minimum, and the ratio of the peak intensities of the emission peaks is 1% -50%.
5. The method according to claim 4, wherein the spectrum comprises at least two emission peaks in the wavelength range of 640nm to 780nm, wherein,
the emission peak in the wavelength range of 640nm to 755nm is the same as the maximum peak of the spectral radiance corresponding to each emission peak in the wavelength range of 720nm to 780nm, and
the minimum peak value of the spectral radiance of the emission peak in the wavelength range of 640nm to 755nm is smaller than the minimum peak value of the spectral radiance of the emission peak in the wavelength range of 720nm to 780 nm.
6. The method according to claim 3, wherein at least one of the first light-emitting unit, the second light-emitting unit and/or the second semiconductor chip (3) is connected to the adjacent chips and/or the grooves of the surface of the board body (1) by bonding wires in a gap combination with each other,
the light-emitting components formed by the first light-emitting unit, the second light-emitting unit and the second semiconductor chip (3) are fixed into the mounting area of the plate body (1) through the die bonding material and/or the sealing material,
covering a light equalizing device (5) capable of transmitting light rays in a wavelength range of 360nm or more to form the light source capable of emitting light rays with continuous spectrum and radiance.
7. The method of claim 4, further comprising dispensing, dispensing and baking, wherein,
the glue preparation means that the silica gel and the fluorescent powder which are mixed based on the mixture ratio obtained by the test are fully mixed by using a stirring device and/or manual stirring in a stirring and vacuumizing mode so as to be at least in a uniform bubble-free state,
dispensing refers to dispensing quantitative colloid for sealing a chip and/or a light-emitting unit at the corresponding position of a bracket which is baked and dehumidified in advance according to the material requirement based on the judgment of the drift degree of the color temperature of a light source,
and baking the semi-finished product light source after dispensing at a certain temperature for a certain time.
8. The method according to claim 4, wherein the phosphor (4) preferably has an emission peak wavelength of 500-600nm, 600-700nm and/or 700-800nm.
9. The method according to claim 4, characterized in that the preferred emission peak wavelength of the first semiconductor chip (2) is 380-470nm.
10. A lamp is characterized by comprising a power supply, an LED light source, an optical lens, a heat dissipation main body and a lamp shade, wherein,
the LED light source at least comprises a first light-emitting unit, a second light-emitting unit and a second semiconductor chip (3) which are arranged and combined with each other, wherein,
the first light-emitting unit is a light-emitting unit with a white light color temperature range formed by exciting a fluorescent powder (4) with an emission peak wavelength in the range of 410-900nm by a first semiconductor chip (2) with an emission peak wavelength of 360-490nm, and
the second light-emitting unit is a light-emitting unit with a white light color temperature range, which is formed by connecting a first semiconductor chip (2) with an emission peak wavelength of 360-490nm and a second semiconductor chip (3) with an emission wavelength of 700-800nm in parallel or in series and then exciting fluorescent powder (4) with the emission peak wavelength in the range of 410-900nm,
the spectral radiance of the first light-emitting unit and the second light-emitting unit in the wavelength range of 360-800 nm is changed in a mode of gradually increasing to the middle part wave band and then decreasing,
the maximum peak point of the spectral energy of the first light-emitting unit and the second light-emitting unit in the wavelength range of 400-480nm is smaller than or equal to the minimum peak point of the spectral energy of the first light-emitting unit and the second light-emitting unit in the wavelength range of 640-780 nm.
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| CN211238288U (en) * | 2019-05-09 | 2020-08-11 | 易美芯光（北京）科技有限公司 | LED light source |
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| CN108091751A (en) * | 2017-12-06 | 2018-05-29 | 佛山市国星光电股份有限公司 | A kind of white light LED part and preparation method thereof, LED light |
| WO2020114463A1 (en) * | 2018-12-07 | 2020-06-11 | 海迪科（南通）光电科技有限公司 | Packaging body and preparation method therefor |
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