CN113394181A - Power switch assembly and fixing method of radiator potential thereof - Google Patents

Power switch assembly and fixing method of radiator potential thereof Download PDF

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CN113394181A
CN113394181A CN202110653610.1A CN202110653610A CN113394181A CN 113394181 A CN113394181 A CN 113394181A CN 202110653610 A CN202110653610 A CN 202110653610A CN 113394181 A CN113394181 A CN 113394181A
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power electronic
heat sink
potential
power
electronic components
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CN113394181B (en
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胡志明
郑剑飞
刘腾
应建平
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Delta Electronics Shanghai Co Ltd
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Delta Electronics Shanghai Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/231—Arrangements for cooling characterised by their places of attachment or cooling paths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/611—Bolts or screws

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Abstract

本公开提供一种功率开关组件，包括：一个开关串，由至少两个功率电子元件串联而成，其中所述至少两个功率电子元件被配置为以同时导通和同时截止的方式运行；一个金属散热器，贴附于所述开关串，以消散所述开关串在所述运行中产生的热量；以及一个阻抗网络，其中所述阻抗网络的两端电连接于所述开关串中任意两个相邻的所述功率电子元件的公共连接点与所述金属散热器之间。

Figure 202110653610

The present disclosure provides a power switch assembly, comprising: a switch string formed by connecting at least two power electronic components in series, wherein the at least two power electronic components are configured to operate in a manner of being turned on and turned off at the same time; a a metal heat sink attached to the switch string to dissipate the heat generated by the switch string during the operation; and an impedance network, wherein both ends of the impedance network are electrically connected to any two of the switch strings between the common connection point of two adjacent power electronic components and the metal heat sink.

Figure 202110653610

Description

Power switch assembly and fixing method of radiator potential thereof
The present application is a divisional application of patent application with application number 2016111877872, application date 2016, 12 and 20, and entitled "method for fixing potential of anti-interference power electronic component and its heat sink".
Technical Field
The present application relates to the field of power electronics technologies, and in particular, to an anti-interference power electronic component and a method for fixing a potential of a heat sink of a power electronic component of the anti-interference power electronic component.
Background
In the field of power electronics, high-power medium-voltage converters, such as 10kV frequency converters, 10kV or 35kV Static Var Generators (SVG), etc., are widely used. In order to adapt to high-voltage applications, these converters are often implemented by means of module cascade, transformer step-down, device series, and the like.
For the sake of volume and cost, the method of using a plurality of power electronic devices, i.e., a plurality of power electronic elements in series, is widely used.
In the operation process of the system, a radiator for radiating the power electronic device can induce high static electricity or alternating potential, so that the power electronic device generates insulation breakdown or electromagnetic interference is caused to a driving circuit, and the power electronic device is damaged or the driving circuit cannot normally work due to interference.
Disclosure of Invention
It is an object of the present disclosure to provide a tamper resistant power electronic assembly and a method for fixing the potential of a heat sink of a power electronic component for such a tamper resistant power electronic assembly, which overcome, at least to some extent, one or more of the problems due to the limitations and disadvantages of the related art.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows, or in part will be obvious from the description, or may be learned by practice of the disclosure.
According to one aspect of the present disclosure, there is provided a tamper resistant power electronics assembly comprising:
a power electronic component comprising a conductive region, an insulating region, and a heat-dissipating substrate, wherein the insulating region is located between the conductive region and the heat-dissipating substrate to prevent electrical contact between the conductive region and the heat-dissipating substrate;
the heat radiator is attached to the heat radiation substrate to dissipate heat generated by the power electronic element; and
and the inductive charge relief circuit comprises at least one resistor which is electrically connected between the conductive area and the radiator so as to relieve the inductive charge on the radiator, so that the potential on the conductive area is the same as or close to the potential on the radiator.
According to one embodiment, the inductive charge draining circuit further comprises a capacitor connected in parallel across the resistor.
According to one embodiment, wherein the heat sink comprises a metal fin.
According to one embodiment, wherein the heat sink and the heat-dissipating substrate are in direct contact.
According to an embodiment, wherein the power electronic component is a switching element.
According to an embodiment, wherein the switching element is any one of an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor and a gate turn-off thyristor.
According to an embodiment, wherein the conductive region is any one of an emitter and a collector of the insulated gate bipolar transistor, a source and a drain of the metal oxide semiconductor field effect transistor, and a cathode and an anode of the gate turn-off thyristor.
According to an embodiment, wherein
The number of the power electronic elements is more than one, and the power electronic elements are connected in series,
the number of the radiators is more than one, and is the same as that of the power electronic elements, the radiators are attached to the corresponding radiating substrates so as to dissipate heat generated by the corresponding power electronic elements, and
the number of the inductive charge bleeding circuits is more than one and is the same as that of the power electronic elements, and the resistor is electrically connected between the corresponding conductive area and the corresponding radiator to bleed off the inductive charge on the corresponding radiator, so that the potential on the conductive area is the same as or close to the potential on the corresponding radiator.
According to an embodiment, wherein
The number of the power electronic elements is n, and the power electronic elements are connected in series,
the number of the heat radiators is one, the heat radiators are attached to the n heat radiating substrates so as to dissipate heat generated by the n power electronic elements, and
the number of the induced charge discharging circuits is one, the resistor is electrically connected between the midpoint of the series connection of the n power electronic elements and the radiator to discharge the induced charge on the radiator, wherein the midpoint is defined as
If n is an even number, the midpoint is the connection point of the n/2 th and n/2+1 th power electronic components, and
if n is an odd number, the midpoint is a connection point of (n-1)/2 th power electronic component and (n +1)/2 th power electronic component, or a connection point of (n +1)/2 th power electronic component and (n +3)/2 th power electronic component.
According to another aspect of the present disclosure, there is provided a method of securing a heat sink potential for a power electronic component, wherein the power electronic component includes a conductive region, an insulating region, and a heat-dissipating substrate, the insulating region being located between the conductive region and the heat-dissipating substrate to prevent electrical contact between the conductive region and the heat-dissipating substrate; the heat sink is attached to the heat dissipation substrate to dissipate heat generated by the power electronic component, the method comprising:
and providing an inductive charge draining circuit, wherein the inductive charge draining circuit comprises at least one resistor electrically connected between the conductive area and the radiator to drain the inductive charge on the radiator.
According to an embodiment, wherein a capacitor is further provided in the inductive charge draining circuit, connected in parallel across the resistor.
According to one embodiment, wherein the heat sink comprises a metal fin.
According to one embodiment, wherein direct contact between the heat sink and the heat-dissipating substrate is made.
According to an embodiment, wherein the power electronic component is a switching element.
According to an embodiment, wherein the switching element is any one of an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor and a gate turn-off thyristor.
According to an embodiment, wherein the conductive region is any one of an emitter and a collector of the insulated gate bipolar transistor, a source and a drain of the metal oxide semiconductor field effect transistor, and a cathode and an anode of the gate turn-off thyristor.
According to an embodiment, wherein
The number of the power electronic elements is more than one and the power electronic elements are connected in series,
the number of the radiators is more than one and is the same as that of the power electronic elements, and the radiators are attached to the corresponding radiating substrates so as to dissipate heat generated by the corresponding power electronic elements, and
the number of the inductive charge discharging circuits is more than one and is the same as that of the power electronic elements, and the resistor is electrically connected between the corresponding conductive area and the radiator so as to discharge the inductive charge on the corresponding radiator.
According to an embodiment, wherein
The number of the power electronic elements is n, and the power electronic elements are connected in series,
the number of the heat radiators is one, the heat radiators are attached to the n heat radiating substrates so as to dissipate heat generated by the n power electronic elements, an
The number of the induced charge discharging circuits is one, and the resistor is electrically connected between the midpoint of the series connection of the n power electronic elements and the radiator to discharge the induced charge on the radiator, wherein the midpoint is defined as
If n is an even number, the midpoint is the connection point of the n/2 th and n/2+1 th power electronic components, and
if n is an odd number, the midpoint is a connection point of (n-1)/2 th power electronic component and (n +1)/2 th power electronic component, or a connection point of (n +1)/2 th power electronic component and (n +3)/2 th power electronic component.
According to the anti-interference power electronic component and the fixing method for the potential of the radiator of the anti-interference power electronic component, the potential of each power electronic element can be guaranteed to be the same as or close to the potential of the radiator for radiating the power electronic element, so that the insulation breakdown of the power electronic element can be prevented, the electromagnetic interference on a driving circuit is avoided, and the size and the complexity of a system cannot be increased additionally.
For a better understanding of the nature and technical content of the present application, reference should be made to the following detailed description and accompanying drawings, which are included to illustrate and not limit the scope of the present application.
Drawings
The above and other features and advantages of the present disclosure will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
FIG. 1 is a schematic diagram of a prior art medium voltage converter circuit topology;
FIG. 2 is a schematic top view of the internal structure of a prior art power electronic component;
fig. 3 is a side view of the internal structure of the power electronics component 1010 of fig. 2 after assembly with a heat sink;
FIG. 4 is a schematic top view of the external structure of a prior art power electronic component;
FIG. 5 is a schematic top view of the external structure of the power electronic component 1020 of FIG. 4 assembled with a heat sink;
FIG. 6 is a schematic diagram of one embodiment of a tamper resistant power electronics assembly of the present application;
FIG. 7 is a schematic diagram of yet another embodiment of a tamper resistant power electronics assembly of the present application;
FIG. 8 is an equivalent circuit diagram of the tamper resistant power electronics assembly 2010 of the present application shown in FIG. 7;
FIG. 9 is a schematic diagram of yet another embodiment of the tamper resistant power electronics assembly of the present application;
FIG. 10 is an equivalent circuit diagram of the tamper resistant power electronics assembly shown in FIG. 9;
FIG. 11 is a schematic diagram of yet another embodiment of the tamper resistant power electronics assembly of the present application;
FIG. 12 is an equivalent circuit diagram of the tamper resistant power electronics assembly shown in FIG. 11;
FIG. 13 is a flow diagram of one embodiment of a method for fixing the potential of a heat sink of a power electronic component of the tamper resistant power electronic assembly described above;
FIG. 14 is a flow chart of yet another embodiment of a method for fixing the potential of a heat sink of a power electronic component of the tamper resistant power electronic assembly described above;
FIG. 15 is a flow diagram of yet another embodiment of a method for fixing the potential of a heat sink of a power electronic component of the tamper resistant power electronic assembly described above; and
fig. 16 is a flow chart of yet another embodiment of a method for securing a floating potential of a heat sink for power electronics of the above-described tamper resistant power electronics assembly.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar structures in the drawings, and thus detailed descriptions thereof will be omitted.
Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the application. One skilled in the relevant art will recognize, however, that the subject matter of the present application can be practiced without one or more of the specific details, or with other structures, components, steps, methods, and/or the like. In other instances, well-known structures, components, or operations are not shown or described in detail to avoid obscuring aspects of the application.
Referring first to fig. 1-6, one embodiment of the tamper resistant power electronics assembly of the present application is described.
Fig. 1 is a schematic diagram of a topology of a prior art medium voltage converter circuit. As shown in fig. 1, the medium voltage converter circuit 1000 includes a bus capacitor CBBus B and switch string S1-a switching string S6. Switch string S1And S4Form a U-phase bridge arm and a switch string S2And S5Form a V-phase bridge arm and a switch string S3And S6Forming a W-phase bridge arm. Switch string S1-a switching string S6The switch tube is composed of a plurality of switch tubes S in series connection, so as to adapt to the application occasions of high voltage. The switching tube S may be an Insulated Gate Bipolar Transistor (IGBT), or other power electronic devices such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), a gate turn-off thyristor (GTO), or the like, i.e., a power electronic component. Since the switching tube S is subjected to high voltage and large current during operation, a heat sink is required for heat dissipation.
Fig. 2 is a schematic top view of an internal structure of a prior art power electronic component, wherein the power electronic component 1010 may be the switch S in fig. 1. As shown in fig. 2, the power electronic component 1010 includes a conductive region 1, an insulating region 2, and a heat dissipating substrate 3, wherein the insulating region 2 is located between the conductive region 1 and the heat dissipating substrate 3 to prevent electrical contact between the conductive region 1 and the heat dissipating substrate 3. The insulating region 2 can be made of a ceramic material, for example. Neglecting the thickness of the insulating region 2, there is a gap d between the conductive region 1 and the heat-dissipating substrate 3. Too high voltage between the conductive region 1 and the heat dissipation substrate 3 breaks down the gap d to cause arcing, thereby damaging power electronic components or systems, or generating electromagnetic interference, resulting in failure of the driving circuit to operate normally due to the interference.
Fig. 3 is a side view of the internal structure of the power electronic component 1010 and the heat sink of fig. 2 after assembly. As shown in fig. 3, power electronics assembly 1010' includes power electronics 1010 and heat sink 4. The heat sink 4 is attached to the heat dissipation substrate 3 to dissipate heat generated by the power electronic component 1010. After the heat sink 4 is attached to the heat dissipation substrate 3, the two have the same potential.
Fig. 4 is a schematic top view of an external structure of a power electronic component in the prior art, which is used to better illustrate the structural features of the power electronic component. As shown in fig. 4, the power electronic element 1020 includes a body 5 and electrodes 6-9. The main body 5 here includes the insulating region 2, the conductive region 1 surrounded by the insulating region 2, and the heat dissipating substrate 3 in fig. 2, but its outline is mainly embodied as the size of the heat dissipating substrate 3 because the heat dissipating substrate 3 is at the outermost periphery of the power electronic component 1020. Here, the electrode 6 is, for example, a collector, the electrode 7 is, for example, an emitter, the electrode 8 is, for example, a gate, the electrode 9 is, for example, a ground of the gate, and the electrodes 6 to 9 can be regarded as external leads of the conductive region 1. During the operation of the power electronic component 1020, the electrodes 6 and 7 are subjected to high voltage and large current, and therefore are usually made into a thick quadrangular prism in a top view, which is a square, wherein circles represent a top view of screw holes for connection, wherein the screws are located on the electrode lead-out copper bars.
Fig. 5 is a schematic top view of the external structure of the power electronic component 1020 and the heat sink in fig. 4 after assembly. As shown in fig. 5, the power electronics assembly 1020' includes a power electronics component 1020 and a heat sink 4. The heat sink 4 is attached to the power electronic component 1020, i.e., the heat dissipation substrate of the power electronic component 1020, so as to dissipate heat generated by the power electronic component 1020, and when the power electronic component 1020 works, a floating potential is induced on the heat sink 4; or when the potential of the power electronics 1020 changes, a floating potential will be induced on the heat sink 4.
FIG. 6 is a schematic diagram of one embodiment of a tamper resistant power electronics assembly of the present application. As shown in fig. 6, the tamper resistant power electronics assembly 2000 of the present application includes the power electronics assembly 1010' and inductive charge bleed circuit 20 shown in fig. 3.
Since the power electronics 1010' have been described sufficiently above, it will not be described in detail.
The inductive charge draining circuit 20 of the present application includes at least one resistor R electrically connected between the conductive area 1 and the heat sink 4 to drain the inductive charge on the heat sink 4, so that the potential on the conductive area 1 is the same as or close to the potential on the heat sink 4.
The conductive region 1 described in the embodiments of the present application mainly refers to a region to which electrodes to be subjected to high voltage and large current during operation of the power electronic component are connected, such as the collector 6 and the emitter 7 shown in fig. 4 and 5. The conductive region 1 described in the embodiments may also refer to a region to which electrodes subjected to low voltage and small current during operation of the power electronic component are connected, such as the gate electrode 8 and the gate ground 9 shown in fig. 4 and 5.
FIG. 7 is a schematic diagram of yet another embodiment of the tamper resistant power electronics assembly of the present application. As shown in fig. 7, the tamper resistant power electronics package 2010 of the present application includes the power electronics package 1010' and inductive charge bleed circuit 21 shown in fig. 3.
Since the power electronics 1010' have been described sufficiently above, it will not be described in detail.
Compared with the inductive charge discharging circuit 20 in fig. 6, the inductive charge discharging circuit 21 of the present embodiment further includes a capacitor C connected in parallel to two ends of the resistor R. The capacitor C is used to increase the charging and discharging speed, and is particularly advantageous for discharging the electric charge induced on the radiator 4 due to the alternating voltage or the high-frequency pulse voltage, and more particularly for discharging the high-frequency pulse potential.
Fig. 8 is an equivalent circuit diagram of the tamper resistant power electronics assembly 2010 of the present application shown in fig. 7. As shown in fig. 8, the tamper resistant power electronics assembly 2010' of the present application includes a power electronic component T, a heat sink H, a resistor R, and a capacitor C.
The power electronic component T shown in fig. 8 is, for example, the power electronic component 1010 shown in fig. 7. The heat sink H shown in fig. 8 is, for example, the heat sink 4 shown in fig. 7. The resistor R and the capacitor C shown in fig. 8 constitute, for example, the inductive charge discharging circuit 21 shown in fig. 7.
Fig. 8 shows only one embodiment of the present application, in which the capacitor C may not be included.
As an embodiment of the tamper-resistant power electronic component of the present application, the aforementioned heat sink comprises a metal heat sink.
As an embodiment of the tamper-resistant power electronic component of the present application, the aforementioned heat sink and the heat-dissipating substrate are in direct contact.
As an embodiment of the tamper resistant power electronic component of the present application, the aforementioned power electronic element is a switching element.
As an embodiment of the anti-jamming power electronic component of the present application, the aforementioned switching element is any one of an Insulated Gate Bipolar Transistor (IGBT), a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and a gate turn-off thyristor (GTO).
As an embodiment of the tamper resistant power electronic component of the present application, the aforementioned conductive regions are any one of an emitter and a collector of an insulated gate bipolar transistor, a source and a drain of a metal oxide semiconductor field effect transistor, and a cathode and an anode of a gate turn-off thyristor.
FIG. 9 is a schematic diagram of yet another embodiment of the tamper resistant power electronics assembly of the present application. Fig. 10 is an equivalent circuit diagram of the tamper resistant power electronics assembly shown in fig. 9. As shown in fig. 9 and 10, in the tamper-resistant power electronic assemblies 2020 and 2020' of the present application, the number of power electronic components T may be more than one and connected in series; meanwhile, the number of the radiators H is more than one and is the same as that of the power electronic elements T, and the radiators H are attached to the radiating substrate of the corresponding power electronic elements T so as to dissipate heat generated by the corresponding power electronic elements T; meanwhile, the number of the inductive charge discharging circuits, such as the circuit formed by the resistor R and the capacitor C in fig. 10, is more than one, and is the same as the number of the power electronic elements T, the resistor R is electrically connected between the conductive region (such as the collector and the emitter) of the corresponding power electronic element T and the heat sink H to discharge the inductive charge on the corresponding heat sink H, so that the potential on the conductive region of the power electronic element T is the same as or close to the potential on the corresponding heat sink H.
Although the circuit constituted by the resistor R and the capacitor C is shown as the induced charge bleeding circuit in fig. 10, the capacitor C may not be included.
In addition, the power electronic components T shown in fig. 9 are connected in series through the connecting copper bar L, and the connecting copper bar L is not related to the present application, so that the description is omitted.
FIG. 11 is a schematic diagram of yet another embodiment of the tamper resistant power electronics assembly of the present application. Fig. 12 is an equivalent circuit diagram of the tamper resistant power electronics assembly shown in fig. 11. As shown in fig. 11 and 12, in the anti-interference power electronic components 2030 and 2030' of the present application, the number of the power electronic elements T is N and connected in series, and the number of the heat sinks H is one, the heat sinks H are attached to the respective heat dissipation substrates of the N power electronic elements T to dissipate heat generated by the N power electronic elements T, and at the same time, an inductive charge discharging circuit, for example, a circuit formed by a resistor R and a capacitor C in fig. 12 is one, and the resistor R is connected between the midpoint N of the series connection of the N power electronic elements T and the heat sinks H to discharge the inductive charge on the heat sinks H.
As shown in fig. 12, n power electronic components T1…Tj、Tj+1…TnAre connected in series. Wherein the midpoint N is defined as follows:
if N is an even number, the midpoint N is the connection point of the nth/2 power electronic component T and the nth/2 +1 power electronic component T. That is, in this case, j in FIG. 12 takes a value of n/2.
If N is an odd number, the midpoint N is a connection point of the (N-1)/2 th power electronic component T and the (N +1)/2 th power electronic component T. That is, in this case, j in FIG. 12 takes a value of (n-1)/2.
Alternatively, if N is an odd number, the midpoint N is a connection point between the (N +1)/2 th power electronic component T and the (N +3)/2 th power electronic component T, that is, j in fig. 12 takes a value of (N + 1)/2.
Although a circuit constituted by the resistor R and the capacitor C is shown as the induced charge bleeding circuit in fig. 12, the capacitor C may not be included.
In addition, the power electronic components T shown in fig. 11 are connected in series through the connecting copper bar L, and the connecting copper bar L is not related to the present application, so that the description is omitted.
Corresponding to the anti-interference power electronic component, the application also provides the following method for fixing the potential of the radiator of the power electronic element of the anti-interference power electronic component.
Fig. 13 is a flow chart of one embodiment of a method for fixing the potential of a heat sink of a power electronic component of the above-described tamper resistant power electronic assembly. As shown in fig. 13, the method for fixing the potential of the heat sink of the power electronic component of the above-mentioned interference-free power electronic component of the present embodiment includes: step 100, providing an inductive charge draining circuit 20, where the inductive charge draining circuit 20 includes at least one resistor R electrically connected between the conductive area 1 and the heat sink 4 to drain the inductive charge on the heat sink 4.
Fig. 14 is a flow chart of yet another embodiment of a method for fixing the potential of a heat sink of a power electronic component of the above-described tamper resistant power electronic assembly. As shown in fig. 14, the method for fixing the potential of the heat sink of the power electronic component of the above-mentioned interference-free power electronic component of the present embodiment includes: step 100 ', wherein step 100' is based on step 100, and a capacitor C is provided in the inductive charge draining circuit 21, connected in parallel across the resistor R.
As an embodiment of the method for fixing the potential of the heat sink of the power electronic component of the above-mentioned interference-free power electronic component of the present application, the heat sink comprises a metal heat sink.
As an embodiment of the method for fixing the potential of the heat sink of the power electronic component of the above-mentioned interference-free power electronic component of the present application, the heat sink and the heat dissipation substrate are in direct contact with each other.
As an embodiment of the method for fixing the potential of the heat sink of the power electronic component of the above-mentioned interference-free power electronic component of the present application, the aforementioned power electronic component is a switching element.
As an embodiment of the fixing method for the heat sink potential of the power electronic component of the above-mentioned interference-free power electronic component of the present application, the aforementioned switching element is any one of an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor, and a gate turn-off thyristor.
As an embodiment of the fixing method for the potential of the heat sink of the power electronic component of the above-mentioned interference-free power electronic component of the present application, the aforementioned conductive region is any one of an emitter and a collector of an insulated gate bipolar transistor, a source and a drain of a metal oxide semiconductor field effect transistor, and a cathode and an anode of a gate turn-off thyristor.
Fig. 15 is a flow chart of yet another embodiment of a method for fixing the potential of a heat sink of a power electronic component of the above-described tamper resistant power electronic assembly. As shown in fig. 15, the method for fixing the potential of the heat sink of the power electronic component of the above-mentioned interference-free power electronic component of the present embodiment includes: step 100 ″, in which step 100 ″ is based on step 100, and the number of the power electronic elements T is greater than one and is connected in series, the number of the heat sinks H is greater than one and is the same as the number of the power electronic elements T, the heat sinks H are attached to the heat dissipation substrates of the corresponding power electronic elements T to dissipate heat generated by the corresponding power electronic elements T, and the number of the inductive charge discharging circuits 20 is greater than one and is the same as the number of the power electronic elements T, and the resistors R are correspondingly electrically connected between the conductive areas of the power electronic elements T and the heat sinks H to discharge the inductive charges on the corresponding heat sinks H.
Although the circuit formed by the resistor R is used as the inductive charge bleeding circuit in fig. 15, the inductive charge bleeding circuit may include a capacitor C connected in parallel to both ends of R.
Fig. 16 is a flow chart of yet another embodiment of a method for securing a floating potential of a heat sink for power electronics of the above-described tamper resistant power electronics assembly. As shown in fig. 16, the method for fixing the potential of the heat sink of the power electronic component of the above-mentioned interference-free power electronic component of the present embodiment includes: step 100 "', where the step 100"' is based on the step 100, and the number of the power electronic elements T is N and the power electronic elements T are connected in series, the number of the heat sinks H is one, the heat sinks H are attached to the respective heat dissipation substrates of the power electronic elements T to dissipate heat generated by the power electronic elements T, and the number of the induced charge discharging circuits is one, and the resistor R is electrically connected between the midpoint N of the series connection of the N power electronic elements T and the heat sinks H to discharge the induced charge on the heat sinks H.
Referring to fig. 12, in step 100' ″ of the method for fixing the potential of the heat sink of the power electronic component of the tamper-resistant power electronic assembly shown in fig. 16, n power electronic components T1…Tj、Tj+1…TnAre connected in series. Wherein the midpoint N is defined as follows:
if N is an even number, the midpoint N is the connection point of the nth/2 power electronic component T and the nth/2 +1 power electronic component T. That is, in this case, j in FIG. 12 takes a value of n/2.
If N is an odd number, the midpoint N is a connection point of the (N-1)/2 th power electronic component T and the (N +1)/2 th power electronic component T. That is, in this case, j in FIG. 12 takes a value of (n-1)/2.
Alternatively, if N is an odd number, the midpoint N is a connection point between the (N +1)/2 th power electronic component T and the (N +3)/2 th power electronic component T, that is, j in fig. 12 takes a value of (N + 1)/2.
Although the circuit formed by the resistor R is shown as the inductive charge draining circuit in fig. 16, the inductive charge draining circuit may include a capacitor C connected in parallel to both ends of R.
According to the anti-interference power electronic component and the fixing method for the potential of the radiator of the anti-interference power electronic component, the potential of each power electronic element can be guaranteed to be the same as or close to the potential of the radiator for radiating the power electronic element, so that the insulation breakdown of the power electronic element can be prevented, the electromagnetic interference on a driving circuit is avoided, and the size and the complexity of a system cannot be increased additionally.
The present disclosure has been described in terms of the above-described embodiments, which are merely exemplary of the implementations of the present disclosure. It must be noted that the disclosed embodiments do not limit the scope of the disclosure. Rather, it is intended that all such alterations and modifications be included within the spirit and scope of this disclosure.

Claims (14)

1.一种功率开关组件，包括：1. A power switch assembly, comprising: 一个开关串，由至少两个功率电子元件串联而成，其中所述至少两个功率电子元件被配置为以同时导通和同时截止的方式运行；a switch string consisting of at least two power electronic components connected in series, wherein the at least two power electronic components are configured to operate in a simultaneous on and off manner; 一个金属散热器，贴附于所述开关串，以消散所述开关串在所述运行中产生的热量；以及a metal heat sink attached to the switch string to dissipate heat generated by the switch string during the operation; and 一个阻抗网络，其中所述阻抗网络的两端电连接于所述开关串中任意两个相邻的所述功率电子元件的公共连接点与所述金属散热器之间。An impedance network, wherein two ends of the impedance network are electrically connected between the common connection point of any two adjacent power electronic components in the switch string and the metal heat sink. 2.根据权利要求1所述的功率开关组件，其中所述阻抗网络电连接于所述开关串的中点与所述金属散热器之间，所述中点的定义如下：2. The power switch assembly of claim 1, wherein the impedance network is electrically connected between a midpoint of the switch string and the metal heat sink, the midpoint being defined as follows: 设定所述功率电子元件的数量为n，Set the number of the power electronic components to be n, 若n是偶数，则所述中点为第n/2个所述功率电子元件与第n/2+1个所述功率电子元件的公共连接点，以及if n is an even number, the midpoint is the common connection point of the n/2th said power electronic component and the n/2+1th said power electronic component, and 若n是奇数，则所述中点为第(n-1)/2个所述功率电子元件与第(n+1)/2个所述功率电子元件的公共连接点，或者为第(n+1)/2个所述功率电子元件与第(n+3)/2个所述功率电子元件的公共连接点。If n is an odd number, the midpoint is the common connection point of the (n-1)/2th power electronic element and the (n+1)/2th power electronic element, or the (nth) +1)/2 common connection points of said power electronic components and (n+3)/2 said power electronic components. 3.根据权利要求1或2所述的功率开关组件，其中所述阻抗网络为电阻。3. The power switch assembly of claim 1 or 2, wherein the impedance network is a resistor. 4.根据权利要求1或2所述的功率开关组件，其中所述阻抗网络为并联连接的电阻和电容。4. The power switch assembly of claim 1 or 2, wherein the impedance network is a resistor and capacitor connected in parallel. 5.根据权利要求1或2所述的功率开关组件，其中，在所述运行中，所述金属散热器上的电位为交变电位，与所述功率电子元件的公共连接点的电位相同或接近。5. The power switch assembly of claim 1 or 2, wherein, in the operation, the potential on the metal heat sink is an alternating potential, the same as the potential of the common connection point of the power electronic components or near. 6.根据权利要求1或2所述的功率开关组件，其中所述功率电子元件是绝缘栅双极型晶体管、金属氧化物半导体场效应晶体管和栅极关断晶闸管中的任何一种。6. The power switch assembly of claim 1 or 2, wherein the power electronic component is any one of an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor, and a gate turn-off thyristor. 7.根据权利要求6所述的功率开关组件，其中所述功率电子元件的公共连接点是所述绝缘栅双极型晶体管的发射极和集电极、所述金属氧化物半导体场效应晶体管的源极和漏极、以及所述栅极关断晶闸管的阴极和阳极中的任何一极。7. The power switch assembly of claim 6, wherein the common connection point of the power electronic components is the emitter and collector of the insulated gate bipolar transistor, the source of the metal oxide semiconductor field effect transistor pole and drain, and the gate turns off any one of the cathode and anode of the thyristor. 8.一种用于功率开关组件的散热器电位的固定方法，其中所述功率开关组件包括：一个开关串，由至少两个功率电子元件串联而成，其中所述至少两个功率电子元件被配置为以同时导通和同时截止的方式运行；以及一个金属散热器，贴附于所述开关串，以消散所述开关串在所述运行中产生的热量，所述方法包括：8. A method for fixing the potential of a heat sink for a power switch assembly, wherein the power switch assembly comprises: a switch string formed of at least two power electronic components connected in series, wherein the at least two power electronic components are configured to operate in both on and off modes; and a metal heat sink attached to the switch string to dissipate heat generated by the switch string during the operation, the method comprising: 提供一个阻抗网络，其中所述阻抗网络的两端电连接于所述开关串中任意两个相邻的所述功率电子元件的公共连接点与所述金属散热器之间。An impedance network is provided, wherein both ends of the impedance network are electrically connected between the common connection point of any two adjacent power electronic components in the switch string and the metal heat sink. 9.根据权利要求8所述的用于功率开关组件的散热器电位的固定方法，其中所述阻抗网络电连接于所述开关串的中点与所述金属散热器之间，所述中点的定义如下：9. The method for fixing the potential of a heat sink for a power switch assembly according to claim 8, wherein the impedance network is electrically connected between a midpoint of the switch string and the metal heat sink, the midpoint is defined as follows: 设定所述功率电子元件的数量为n，Set the number of the power electronic components to be n, 若n是偶数，则所述中点为第n/2个所述功率电子元件与第n/2+1个所述功率电子元件的公共连接点，以及if n is an even number, the midpoint is the common connection point of the n/2th said power electronic component and the n/2+1th said power electronic component, and 若n是奇数，则所述中点为第(n-1)/2个所述功率电子元件与第(n+1)/2个所述功率电子元件的公共连接点，或者为第(n+1)/2个所述功率电子元件与第(n+3)/2个所述功率电子元件的公共连接点。If n is an odd number, the midpoint is the common connection point of the (n-1)/2th power electronic element and the (n+1)/2th power electronic element, or the (nth) +1)/2 common connection points of said power electronic components and (n+3)/2 said power electronic components. 10.根据权利要求8或9所述的用于功率开关组件的散热器电位的固定方法，其中所述阻抗网络为电阻。10. The fixing method for the heat sink potential of a power switch assembly according to claim 8 or 9, wherein the impedance network is a resistor. 11.根据权利要求8或9所述的用于功率开关组件的散热器电位的固定方法，其中所述阻抗网络为并联连接的电阻和电容。11. A method of fixing the potential of a heat sink for a power switch assembly according to claim 8 or 9, wherein the impedance network is a resistor and a capacitor connected in parallel. 12.根据权利要求8或9所述的用于功率开关组件的散热器电位的固定方法，其中，在所述运行中，所述金属散热器上的电位为交变电位，与所述功率电子元件的公共连接点的电位相同或接近。12. The method for fixing the potential of a heat sink for a power switch assembly according to claim 8 or 9, wherein, in the operation, the potential on the metal heat sink is an alternating potential, which is different from the power electronic potential. The common connection points of the components are at the same or close potential. 13.根据权利要求8或9所述的用于功率开关组件的散热器电位的固定方法，其中所述功率电子元件是绝缘栅双极型晶体管、金属氧化物半导体场效应晶体管和栅极关断晶闸管中的任何一种。13. The fixing method of the heat sink potential for a power switch assembly according to claim 8 or 9, wherein the power electronic components are insulated gate bipolar transistors, metal oxide semiconductor field effect transistors and gate off Any of the thyristors. 14.根据权利要求13所述的用于功率开关组件的散热器电位的固定方法，其中所述功率电子元件的公共连接点是所述绝缘栅双极型晶体管的发射极和集电极、所述金属氧化物半导体场效应晶体管的源极和漏极、以及所述栅极关断晶闸管的阴极和阳极中的任何一极。14. The method for fixing the heat sink potential of a power switch assembly according to claim 13, wherein the common connection point of the power electronic components is the emitter and collector of the insulated gate bipolar transistor, the The source and drain of the metal-oxide-semiconductor field effect transistor, and the gate turns off any one of the cathode and the anode of the thyristor.
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