CN112864297B - LED packaging device - Google Patents

Abstract

The invention provides an LED packaging device, which comprises a substrate, a first LED chip, a second LED chip, a first LED chip and a second LED chip, wherein the substrate is provided with an upper surface and a lower surface; the metal lug boss arranged on the upper surface of the substrate is arranged on the LED chip on the metal lug boss; the packaging colloid covers the LED chip, the metal boss and the substrate, is fluororesin, has a pattern structure and is in snap connection with the packaging colloid, so that the adhesion force of the packaging colloid and the substrate is increased, the deformation quantity of the bottom of the packaging colloid during cutting is effectively reduced, the packaging colloid close to the die bonding area of the metal boss is ensured to be tightly combined with the substrate, and the substrate cannot be peeled off due to cutting stress; the substrate and the packaging colloid are effectively prevented from being peeled off due to different thermal expansion deformation in the use process of the packaging body; effectively preventing the package body from vibrating and falling off in the transportation or transmission process.

Description

An LED package device

This application is a division of an invention patent with the application number 2019100864389 submitted by the applicant "Quanzhou Sanan Semiconductor Technology Co., Ltd." on January 29, 2019, and the invention name is "an LED package device and its manufacturing method" Application.

technical field

The invention relates to the technical field of LED packaging, in particular to an LED packaging device.

Background technique

With the improvement of technology, the cost reduction and efficiency improvement of deep ultraviolet LED, the application of deep ultraviolet LED is more and more widely. In particular, the deadline for traditional mercury lamps to withdraw from the market is getting closer and closer, and the demand for deep ultraviolet LED lamps is on the eve of the outbreak.

The existing deep ultraviolet LED packages are mainly ceramic bowls and quartz glass. There are disadvantages of being too bulky and expensive, and because light first goes from sapphire to air, and then to quartz glass, the light extraction efficiency of the package is low.

In addition, there are some packages that use a flat ceramic substrate and mold silicone. The main disadvantage of this type of packaging is that deep ultraviolet light (below 290 nm) is very destructive to silica gel, and it is easy to crack after long-term exposure, and the transmittance of silica gel to deep ultraviolet light is relatively low. Another commonly used encapsulation colloid is fluorine-containing material, but fluorine-containing material is particularly difficult to process due to the problem of adhesion, and when cutting, it is prone to problems such as cutting off, vibration falling off, and reflow soldering bubbles.

SUMMARY OF THE INVENTION

In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an LED packaging device and a manufacturing method thereof, which are used to solve the problems of poor adhesion between the packaging colloid and the substrate and easy to fall off in the prior art.

In order to achieve the above purpose and other related purposes, a first aspect of the present invention provides an LED package device, comprising:

a substrate, including an upper surface and a lower surface;

at least one metal boss disposed on the upper surface of the substrate, with a first interval between at least one of the metal bosses;

an LED chip arranged on the metal boss;

an encapsulant covering the LED chip, the metal boss and the substrate;

Wherein, the metal boss has a pattern structure, and the encapsulant is connected with the metal boss with the pattern structure by snap connection.

Preferably, the metal boss includes a metal plating layer formed on the substrate.

Preferably, the thickness of the metal boss is greater than or equal to 0.1 times the thickness of the encapsulant.

Preferably, the distance between the edge of the metal boss and the edge of the encapsulant is less than or equal to 0.1 mm.

Preferably, the width of the metal boss is greater than or equal to 1/3 of the thickness of the encapsulant, wherein the width of the metal boss refers to the width of the metal boss in a direction perpendicular to the cutting direction.

Preferably, the metal boss includes a die-bonding region and an isolation strip.

More preferably, the crystal-bonding region is located in the middle part of the metal boss, and the crystal-bonding region comprises a positive crystal-bonding region and a negative-electrode crystal-bonding region which are oppositely arranged and separated from each other by a second interval, wherein the positive crystal-bonding region The positive electrode of the LED chip is connected, and the negative electrode die-bonding region is connected to the negative electrode of the LED chip.

More preferably, the spacer is located at the edge portion of the metal boss, and the spacer has a pattern structure.

Preferably, the thicknesses of the die-bonding region and the isolation strip are the same.

Preferably, the isolation strip includes a closed structure and is separated from the die-bonding region.

Preferably, the spacer strip forms a first part and a second part separated from each other, and the first part and the second part comprise an L-shaped structure.

Preferably, the pattern structure of the isolation belt includes a zigzag pattern or a hollowed-out pattern, wherein the zigzag pattern includes inward serrations or circumferentially outward serrations along the circumferential direction of the isolation belt.

Preferably, the encapsulating colloid is solution-baked or hot-pressed to fill the gap between each pair of the metal bosses and fill the holes or gaps formed by the pattern to form the snap connection.

Preferably, the isolation strip further includes a protection device encapsulation area located on one side of the isolation strip.

Preferably, there is a concave region between the isolation strip and the die-bonding region.

Preferably, the height/width of the recessed area is greater than or equal to 1/2.

Preferably, the thickness of the recessed region is smaller than that of the isolation strip and/or the thickness of the recessed region is smaller than the thickness of the die-bonding region.

Preferably, the substrate includes:

a conductive portion located in the substrate and penetrating through the substrate, the conductive portion comprising a positive conductive portion and a negative conductive portion respectively conducting with the positive electrode and the negative electrode of the LED chip; and

A pad located on the lower surface of the substrate, the pad includes a positive electrode pad and a negative electrode pad that are respectively connected to the positive electrode conductive portion and the negative electrode conductive portion.

Preferably, it also includes a single light emitting device cut out from the packaged device along the middle of the first interval.

In order to achieve the above object and other related objects, a second aspect of the present invention provides a method for manufacturing an LED package device, including:

providing a substrate having an upper surface and a lower surface;

At least one metal boss is formed on the upper surface of the substrate, and there is a first space between at least one of the metal bosses;

disposing the LED chip on the metal boss;

Covering the packaging colloid on the LED chip, the metal boss and the substrate;

Wherein, the metal boss has a pattern structure, and the encapsulant is connected with the metal boss with the pattern structure by snap connection.

Preferably, forming at least one of the metal bosses on the upper surface of the substrate includes the following steps:

making a mask with the pattern structure, and attaching the mask on the upper surface of the substrate;

performing metal plating on the upper surface of the substrate to which the mask is attached, and forming a metal film with the pattern structure on the upper surface of the substrate;

Continue to metallize the metal film to increase the thickness of the metal film until the metal boss is formed.

Preferably, the thickness of the metal boss is greater than or equal to 0.1 times the thickness of the encapsulant.

Preferably, the distance between the edge of the metal boss and the edge of the encapsulant is less than or equal to 0.1 mm.

Preferably, the width of the metal boss is greater than or equal to 1/3 of the thickness of the encapsulant, wherein the width of the metal boss refers to the width of the metal boss in a direction perpendicular to the cutting direction.

Preferably, the metal boss includes a die-bonding region and an isolation strip.

Preferably, the die-bonding region is formed in the middle part of the metal boss, and the die-bonding region comprises a positive electrode die-bonding region and a negative electrode die-bonding region which are oppositely arranged and separated from each other by a second interval, wherein the positive electrode solid-state region is The crystal region is connected to the positive electrode of the LED chip, and the negative electrode die-bonding region is connected to the negative electrode of the LED chip.

Preferably, the isolation strip is formed on the edge portion of the metal boss, and the isolation strip is formed with the pattern structure.

Preferably, the thicknesses of the die-bonding region and the isolation strip are the same.

Preferably, the isolation strip forms a closed structure and is separated from the die-bonding region.

Preferably, the spacer strip forms a first part and a second part separated from each other, and the first part and the second part comprise an L-shaped structure.

Preferably, the pattern structure of the isolation belt includes a zigzag pattern or a hollow pattern, wherein the zigzag pattern includes inward serrations or circumferentially outward zigzags along the circumferential direction of the isolation belt.

Preferably, the step of covering the packaging colloid on the LED chip, the metal bosses and the substrate further includes performing solution baking or hot pressing on the packaging colloid, and the packaging colloid fills the metal bosses The first interval therebetween and the holes or slits formed by the pattern structure to form the snap connection.

Preferably, the method further includes forming an electrostatic protection device encapsulation area on one side of the isolation belt.

Preferably, there is a concave region between the die-bonding region and the isolation strip.

Preferably, the height/width of the recessed area is greater than or equal to 1/2.

Preferably, the thickness of the recessed region is smaller than that of the isolation strip and/or the thickness of the recessed region is smaller than the thickness of the die-bonding region.

Preferably, the manufacturing method further comprises the steps of:

forming a conductive portion in the substrate penetrating the substrate, the conductive portion including a positive conductive portion and a negative conductive portion respectively conducting with the positive electrode and the negative electrode of the LED chip;

A pad is formed on the lower surface of the substrate, and the pad includes a positive electrode pad and a negative electrode pad that are respectively connected to the positive electrode conductive portion and the negative electrode conductive portion.

Preferably, the manufacturing method further comprises dicing the packaged device, wherein the packaged device is diced in a unit of a single light-emitting body at a middle position of the first interval.

As mentioned above, the LED package device and the manufacturing method thereof of the present invention have the following beneficial effects:

The method of the present invention forms patterns in the metal bosses, and the encapsulation colloid not only covers the LED chips, the metal bosses and the substrate, but also fills the gaps between the metal bosses and the gaps or holes formed by the patterns in the metal bosses. A snap connection is formed between the colloid and the metal boss. The adhesive force of the encapsulation colloid is increased, which effectively prevents the encapsulation colloid from vibrating and falling off during transportation or transmission.

Due to the close bonding between the packaging colloid, the LED chip, the metal boss and the substrate, defects such as reflow soldering bubbles can be effectively avoided when forming pads on the lower surface of the substrate by reflow soldering, thereby ensuring the yield of subsequent products.

During cutting, the above-mentioned snap connection between the encapsulation colloid and the metal boss can play a blocking role, effectively reducing the deformation amount at the bottom of the encapsulating colloid, and ensuring that the encapsulating colloid and the substrate in the die-bonding area close to the metal boss are closely combined. Will not peel off from the substrate due to cutting force.

When the package body undergoes a large temperature change, although the thermal expansion coefficients of the ceramic substrate and the fluororesin material encapsulant used in the present invention are quite different, since a snap connection can be formed between the encapsulant and the metal boss, it can be Effectively reduce the deformation of the encapsulation compound outside the metal boss, thereby avoiding a gap between the encapsulation compound and the substrate.

In addition, the preparation method of the LED packaging device of the present invention is relatively simple, and has good packaging effect, which is beneficial to reduce packaging costs and increase economic benefits.

Description of drawings

FIG. 1 shows a schematic flowchart of a method for manufacturing an LED package device provided in Embodiment 1. As shown in FIG.

FIG. 2 is a schematic diagram showing the structure of forming metal bosses on the substrate in the method shown in FIG. 1 .

FIG. 3 is a schematic diagram showing the structure of disposing the LED chip on the metal boss in the method shown in FIG. 1 .

FIG. 4 is a schematic diagram showing the structure of covering the chip, the metal boss and the substrate with the encapsulant in the method shown in FIG. 1 .

FIG. 5 is a schematic diagram showing the structure of forming pads on the lower surface of the substrate.

FIG. 6 is a schematic diagram showing the structure of the circled portion in the A-A direction of the structure shown in FIG. 3 .

FIG. 7 and FIG. 8 are schematic structural diagrams of the metal bosses in the second embodiment and the eighth embodiment.

FIG. 9 is a schematic diagram showing the structure of the metal boss in the preferred embodiment of the second embodiment and the eighth embodiment.

FIG. 10 is a schematic diagram showing the structure of the metal bosses in the third embodiment and the ninth embodiment.

FIG. 11 is a schematic diagram showing the structure of the metal bosses in the fourth embodiment and the tenth embodiment.

FIG. 12 shows a schematic structural diagram of a vertical LED chip provided on a metal boss in the method provided in the fifth embodiment and the semiconductor device provided in the eleventh embodiment.

FIG. 13 is a schematic structural diagram of the metal boss in the preferred embodiment of the fifth embodiment and the eleventh embodiment.

FIG. 14 shows a schematic structural diagram of a single light-emitting body provided in the sixth embodiment and the twelfth embodiment.

Component label description

10 Substrates

101 First interval

102 Second interval

20 Metal boss

201 Die bonding area

2011 Positive electrode bonding area

2012 Negative electrode bonding area

202 Electrode area

203 Separator

204 Recessed area

205 Protection device package area

20a Metal Boss

203a Barrier

2031a zigzag pattern

20b Metal Boss

203b Barrier

2031b Cutout Pattern

20c Metal Boss

203c Barrier

2031c Cutout Pattern

20d metal boss

201d die bonding area

2011d Positive electrode solid state

2012d Negative electrode solid state

203d isolation tape

2031d cutout pattern

20e metal boss

201e die bonding area

203e Barrier

2031e Cutout Pattern

20f metal boss

201f Die bonding area

202f-P positive electrode region

202f-N Negative Electrode Region

203f barrier tape

2031f Cutout Pattern

205f protects the device package area

20g metal boss

201g die bonding area

202g-P positive electrode area

202g-N Negative Electrode Region

203g isolation tape

2031g cutout pattern

205g protects the device package area

30 Flip-chip LED chips

30f vertical LED chip

40 Encapsulant

50 pads

60 Conductive part

F Cutting direction

Detailed ways

The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

The refractive index n of the inorganic fluororesin material is about 1.34, the ultraviolet light transmittance is high, and the reliability is good, so the fluororesin material is a very good deep ultraviolet LED packaging material. However, fluorine-containing materials are particularly difficult to process due to the problem of adhesion, and are prone to problems such as cutting off, vibration falling off, and reflow soldering bubbles.

Example 1

This embodiment provides a method for manufacturing an LED package device, as shown in FIG. 1 to FIG. 4 , including the following steps:

A substrate 10 is provided. The substrate 10 includes an upper surface and a lower surface. The substrate 10 can be made of materials commonly used in the art, such as ceramics or silicon, preferably a ceramic substrate.

As shown in FIG. 2 , at least one metal boss 20 is formed on the upper surface of the substrate 10 . As shown in FIG. 2 , there is a first interval 101 between the metal bosses 20 , that is, the metal bosses are arranged at intervals of a _first interval L1 .

Next, as shown in FIG. 3 , the LED chip 30 is arranged on the metal boss 20 . In this embodiment, the LED chip is a flip-chip LED chip.

Referring to FIG. 6 , a schematic diagram of the structure of the circled portion in FIG. 3 along the AA direction is shown. As can be seen from FIG. 6 , the metal boss 20 includes a die-bonding region 201 in the middle portion for arranging the flip-chip LED chip 30 , and the die-bonding region 201 includes a positive electrode die-bonding region 2011 and a negative electrode die-bonding region 2012 (positive electrode die-bonding region 2012 ). The positions of the crystal-bonding region 2011 and the negative electrode crystal-bonding region 2012 are not necessarily the same as shown in the figure. The right side is the positive electrode crystal-bonding region 2011, and the left side is the negative electrode crystal-bonding region 2012. The polarity of the crystal-bonding region is set by flip chip. The positive and negative poles of the LED chips on the top are determined by the positive and negative poles of the LED chips. This is only for the convenience of explaining and defining the positions of the positive and negative crystal-bonding regions in the figure). 2011 is connected to the negative electrode die-bonding region 2012 . As shown in FIG. 6 , there is a second interval 102 between the positive electrode crystal-bonding region 2011 and the negative electrode crystal-bonding region 2012 , that is, there is a second distance L ₂ between the positive electrode crystal-bonding region 2011 and the negative electrode crystal-bonding region 2012 . The second distance L ₂ and the first distance L ₁ between the metal bosses 20 shown in FIG. 2 can be determined according to the actual size of the LED chip and the size requirements of the packaged device to be formed.

Still referring to FIG. 6 , the edge portion of the metal boss 20 forms an isolation zone 203 , a recessed region 204 exists between the isolation zone 203 and the die-bonding region 201 , and the thickness of the recessed region is less than that of the isolation zone 203 and/or the thickness of the recessed region is less than The thickness of the die-bonding region 201 is equal to that of the isolation strip 203 and the die-bonding region 201 . Preferably, the height/width ratio of the recessed area 204 is greater than or equal to 1/2, wherein the height of the recessed area 204 is equal to the height of the metal boss.

As shown in FIG. 6 , in this embodiment, the isolation belt 203 can be generally regarded as a two-part structure separated from each other. 2011 forms a continuous structure, and the other part forms a continuous structure with the negative electrode crystal solid region 2012 . Since the positive crystal bonding area 2011 and the negative crystal bonding area 2012 are connected to the positive electrode and the negative electrode of the LED chip respectively, and the two parts of the isolation belt form a continuous structure in the positive crystal bonding area 2011 and the negative crystal bonding area 2012 respectively, the isolation belt 203 It can be used as the electrode region of the LED chip, and the part of the isolation belt continuous with the positive die bonding region 2011 forms the positive electrode region of the LED chip, and the part of the isolation belt continuous with the negative die bonding region 2012 forms the negative electrode region of the LED chip.

In a preferred embodiment of this embodiment, a thin metal layer may be formed on the substrate 10 by an ion sputtering process first, and then the metal bosses 20 described in this embodiment may be formed by an electroplating or electroless plating process. Specifically, the following steps may be included:

First, a mask with the pattern structure is fabricated, and the mask is attached to the upper surface of the substrate 10 ; for example, an adhesive or the like can be used to attach the mask to the upper surface of the substrate 10 .

After the mask is attached, the upper surface of the substrate 10 is subjected to metallization treatment through the mask, for example, a metal film having the pattern structure is formed on the upper surface of the substrate 10 by an ion sputtering process; The film is a very thin metal layer on the substrate 10, for example, 10-200 μm.

Continuing to perform metal plating on the metal film increases the thickness of the metal film. For example, the metal film is further plated with a metal layer through an electroplating process or an electroless plating process to increase the thickness until the metal bosses are formed.

Referring also to FIG. 6 , in a preferred embodiment of this embodiment, an electrostatic protection device (Zener) packaging area 205 is formed on one side of the isolation strip 203 of the metal boss 20 , and the protection device packaging area 205 is packaged and protected The device plays a protective role for the entire LED package device. For example, the electrostatic device package area 205 can be formed at one side and corner of the isolation belt.

Then, as shown in FIG. 4 , the LED chip 30 , the metal boss 20 and the substrate 10 are covered with an encapsulant 40 . In a preferred embodiment of this embodiment, the encapsulant 40 is preferably a fluororesin material. The LED package covered with the encapsulating compound 40 is heated, for example, vacuum pressing, solution baking or hot pressing can be performed, so that the encapsulating compound 40 fills the first space 101 between the metal bosses 20 and the inside of the metal bosses is fixed. The second spacer 102 in the crystal region 201 , the recessed region 204 between the isolation strip and the die-bonding region, and the gap between the two parts of the isolation strip 203 , and the like. After the heating process, good contact is formed between the encapsulating compound and the LED chip 30 , the metal boss 20 and the substrate. Then, the package body is cooled, and the package colloid adheres to the LED chip 30 , the metal boss 20 and the substrate 10 , and the package jelly fills the above-mentioned metal boss concave areas, gaps, etc., between the metal boss 20 and the metal boss 20 A snap connection can be formed, and the snap connection can increase the adhesive force of the encapsulation colloid, and effectively prevent the encapsulation body from vibrating and falling off during transportation or transmission.

In addition, because the expansion coefficient of ceramics is 1.8*10 ^-5 /°C, and the thermal expansion coefficient of fluororesin materials is generally 8~12*10 ^-5 /°C, the expansion coefficients of the two are quite different. When there is a large temperature change during cooling and cooling, the snap connection between the encapsulant 40 and the metal boss 20 can effectively reduce the deformation of the encapsulant 40 outside the metal boss 20 , thereby avoiding the occurrence of the gap between the encapsulant 40 and the substrate 10 . gap.

In a preferred embodiment of this embodiment, at least one metal boss 20 formed on the substrate 10 has the same thickness, and the thickness of the metal boss 20 (ie the isolation strip 203 and the die-bonding region 201 therein) is greater than or equal to the thickness of the package 0.1 times the thickness of the glue 40, the thickness of the metal boss 20 and the edge of the packaging glue 40 is less than or equal to 0.1 mm, the distance between the edge of the metal boss 20 and the edge of the packaging glue 40 is less than or equal to 0.1 mm, and the width of the metal boss 20 is greater than or equal to the packaging glue 1/3 of the thickness, the width of the metal boss 20 refers to the width of the metal boss 20 perpendicular to the cutting direction (refer to the cutting direction F shown in FIG. 4 ).

In another preferred embodiment of this embodiment, as shown in FIG. 5 , a conductive part 60 is formed in the substrate 10 , and the conductive part 60 includes a positive conductive part and Negative conductive part. The conductive portion 60 includes a conductive hole or the like passing through the base 10 .

Then, a pad 50 is formed on the lower surface of the substrate 10 , and the pad 50 includes a positive electrode pad and a negative electrode pad that are respectively connected to the positive electrode conductive portion and the negative electrode conductive portion of the conductive portion 60 . For example, in the structure shown in FIG. 6 , the conductive part 60 is connected to the positive and negative electrodes of the LED chip through the isolation belt 203 , and the bonding pad 50 is connected to the conductive part 60 , so as to realize the connection between the bonding pad and the positive electrode and negative electrode of the LED chip. Connected.

Forming the pads 50 on the lower surface of the substrate 10 as described above facilitates subsequent formation of the LED package device into a subsequent surface mount device. And, for example, when the above-mentioned LED package device is soldered to a PCB (printed circuit board) plate by using reflow soldering technology, the snap connection formed between the packaging compound 40 and the metal boss 20 makes the packaging compound connect with the substrate, the metal boss and the LED. The tight bonding between chips will not produce defects such as air bubbles during the above reflow soldering process, so the yield of later products can be improved accordingly.

Embodiment 2

This embodiment also provides a method for manufacturing an LED package device, and the same points as those in the first embodiment will not be repeated, but the differences are:

In this embodiment, when forming the metal bosses 20a, various pattern structures are formed in the isolation strips 203a of the metal bosses 20a. As shown in FIG. 7, a zigzag pattern 2031a is formed in the spacer strip 203a. The zigzag pattern 2031a may be inward zigzags or outward zigzags.

After the above-mentioned zigzag pattern is formed, the encapsulant is filled in the gap formed by the zigzag pattern, thereby enhancing the snap connection between the encapsulant and the metal boss 20a, and enhancing the adhesion between the encapsulant and the metal boss 20a and the substrate 10. Knot.

In a preferred embodiment of this embodiment, as shown in FIG. 8 , a hollow pattern 2031b is formed in the isolation belt 203b. The hollow pattern 2031b may be a rectangular hollow pattern, or a hollow pattern such as a diamond, an ellipse, and a circle.

In another preferred embodiment of this embodiment, as shown in FIG. 9 , when forming the metal boss 20c, in order to prevent the L-shaped area formed by the isolation belt 203c from being too large, a hollow pattern is formed on one side of the L-shaped area, For example, a circular and/or rectangular hollow pattern 2031c is formed.

After the hollow pattern is formed, the encapsulating compound is filled in the holes formed by the hollow pattern, thereby enhancing the snap connection between the encapsulating compound and the metal boss 20b (or 20c), and strengthening the encapsulation compound and the metal boss 20b (or 20c). ), the bonding of the substrate 10 .

Embodiment 3

This embodiment also provides a method for manufacturing an LED package device, and the same points as those in the second embodiment will not be repeated, but the differences are:

As shown in FIG. 10 , in this embodiment, when the metal boss 20d is formed, the die bonding region 201d and the isolation strip 203d also form a continuous structure, and there is no recessed region therebetween. The crystal-bonding region 201d and the isolation belt 203d form two parts isolated from each other as a whole, and the two parts respectively include the positive crystal-bonding region 2011d and the negative-electrode crystal-bonding region 2012d, and the part of the isolation belt 203d that is continuous with the positive crystal-bonding region 2011d can be used as the The positive electrode region of the LED chip and the portion of the isolation strip 203d that is continuous with the negative electrode die-bonding region 2012d can be used as the negative electrode region of the LED chip.

In this embodiment, a hollow pattern is also formed in the isolation strip 203d of the metal boss 20d, such as a rectangular hollow pattern 2031d shown in FIG. 10 . Of course, hollow patterns of other figures such as diamonds, circles, ovals and the like may also be included.

The encapsulant is filled in the holes formed by the hollow pattern, thereby enhancing the snap connection between the encapsulant and the metal boss 20 d and enhancing the bonding between the encapsulant, the metal boss 20 d and the substrate 10 .

Embodiment 4

This embodiment also provides a method for manufacturing an LED package device, and the same points as those in the first embodiment will not be repeated, but the differences are:

As shown in FIG. 11 , the metal boss 20e also includes a die-bonding region 201e and an isolation strip 203e. In this embodiment, the isolation strip 203e forms a closed structure and is isolated from the die-bonding region 201e with a recessed region therebetween. 204 and is isolated by recessed region 204 . A pattern structure can be formed in the isolation belt 203e, such as the rectangular hollow pattern 2031e shown in FIG. 11, and of course hollow patterns of other shapes (such as diamond, ellipse, circle, etc.) can also be formed. Also, a zigzag pattern or the like similar to that shown in FIG. 7 may be formed.

In this embodiment, since the die-bonding region 201e and the isolation strip 203e are separated from each other, they are not continuous in structure, so they cannot form an electrical conduction structure. Therefore, in this embodiment, the connection with the LED chip is The positive crystal-bonding region connected with the positive electrode forms the positive electrode region of the LED chip, and the negative crystal-bonding region connected with the negative electrode of the LED chip forms the negative electrode region of the LED chip.

In the packaging device manufacturing method described in this embodiment, the formed conductive portion is connected to the positive and negative electrodes of the LED chip through the die-bonding region 201e, and the pad is communicated with the conductive portion, so as to communicate with the positive and negative electrodes of the LED chip.

Embodiment 5

As shown in FIG. 12 , this embodiment also provides a method for manufacturing an LED package device, which also includes the following steps:

A substrate 10 is provided. The substrate 10 includes an upper surface and a lower surface. The substrate 10 can be made of materials commonly used in the art, such as ceramics or silicon, preferably a ceramic substrate.

At least one metal boss 20 f is formed on the upper surface of the substrate 10 .

The LED chip 30f is placed on the metal boss 20f.

The similarities between this embodiment and the above-mentioned Embodiments 1 to 4 will not be repeated, and the differences are:

In this embodiment, the LED chip 30f is preferably a vertical LED chip. In this embodiment, when the metal boss 20f is formed, the die-bonding region 201f and the isolation strip 203f form a structure separated from each other, with a recessed region therebetween. 204 and are isolated from each other by recessed regions 204 . And a hollow pattern, such as the rectangular hollow pattern 2031f shown in FIG. 12, is formed in the isolation belt 203f. Of course, hollow patterns of other figures (eg, circle, diamond, ellipse, etc.) can also be included.

As shown in FIG. 12 , the die bonding region 201f also includes a positive die bonding region 2011f and a negative electrode die bonding region 2012f. The vertical LED chip 30f of this embodiment is disposed in the positive die bonding region 2011f, and the positive electrode bonding region 2011f is on the side The part of the region includes an extension part, preferably, the extension part extends from a region smaller than 1/2 of the width of the die-bonding region 2011f on the side of the positive electrode die-bonding region, for example, as shown in FIG. A region on the left which is smaller than 1/2 of the width of the positive electrode die-bonding region 2011f extends. The extended portion forms a positive electrode region 202f-P that is in contact with the positive electrode of the LED chip. As shown in FIG. 12 , the negative electrode die-bonding region 2012f is formed on the same side of the positive electrode region 202f-P and adjacent to the positive electrode region 202f-P, and the negative electrode die-bonding region 2012f is formed with the isolation belt 203f and the positive electrode region 202f-P They are spaced apart from each other and form independent structures. A negative electrode bonding wire 206f is formed between the negative electrode surface of the LED chip 30f and the negative electrode die-bonding region 2012f for electrically conducting the two. At this time, the negative electrode die-bonding region 2012f forms the negative electrode region 202f-N of the LED chip 30f. Metal bosses 20f also include protective device encapsulation regions 205f formed in the positive electrode regions 202f-P and negative electrode regions 202f-N.

As shown in FIG. 12 , preferably, the total width of the positive electrode region 202f-P, the negative electrode region 202f-N and the space therebetween does not exceed the width of the region where the LED chip is arranged in the positive die bonding region 2011f.

As shown in FIG. 13 , in a preferred embodiment of this embodiment, when forming the metal boss 20g, the negative electrode regions 202f-N shown in FIG. 12 are not formed separately, but on the negative electrode surface of the LED chip 30f and the isolation A negative electrode bonding wire 206g is formed between the strips 203g to make the two electrically conductive. At this time, the isolation strip 203g simultaneously serves as the negative electrode region 202g-N of the LED chip 30f. And a protection device encapsulation region 205g is formed in the positive electrode regions 202g-P and the isolation strips 203g. In addition, a hollow pattern 2031g is also formed in the isolation belt 203g, such as the rectangular hollow pattern 2031g shown in FIG. 13 . Of course, hollow patterns of other figures (eg, circle, diamond, ellipse, etc.) can also be included.

The encapsulant is filled in the holes formed by the hollow pattern, thereby enhancing the snap connection between the encapsulant and the metal boss 20f (or 20g), and enhancing the connection between the encapsulant and the metal boss 20f (or 20g) and the substrate 10 . bond.

Embodiment 6

This embodiment also provides a method for manufacturing an LED package device, and the same points as the above-mentioned Embodiments 1 to 5 will not be repeated, and the differences are:

The manufacturing method of this embodiment further includes cutting the packaged device. The encapsulated device is cut along the middle position of the first interval 101 shown in FIG. 2 , along the cutting direction F shown in FIG. 4 , with a single light-emitting body as a unit to obtain the single light-emitting body device shown in FIG. 14 . .

Since the above-mentioned snap connection is formed between the encapsulating compound 40 and the metal boss 20, the snap connection can play a blocking role during cutting, effectively reducing the amount of deformation at the bottom of the encapsulating compound, and ensuring that the bottom of the encapsulating compound is close to the metal boss. The encapsulant in the die bonding area is closely combined with the substrate, and will not be peeled off from the substrate due to cutting force.

Embodiment 7

This embodiment provides an LED package device. Referring to FIG. 4 and FIG. 5 again, the LED package device includes:

The substrate 10 includes an upper surface and a lower surface, and the substrate 10 can be made of materials commonly used in the art, such as ceramics or silicon, preferably a ceramic substrate.

At least one metal boss 20 disposed on the upper surface of the substrate 10, for example, the metal boss 20 may be a metal plating layer formed on the ceramic substrate by a sputtering process combined with an electroplating or electroless plating process, and the metal plating layer may be Copper plating. As shown in FIG. 2 , there are first intervals 101 between the metal bosses 20 , that is, the metal bosses are arranged at intervals with a first interval L1 .

The LED chips 30 disposed on the metal bosses 20 are flip-chip LED chips in this embodiment.

Referring to FIG. 6 , a schematic diagram of the structure of the circled portion in FIG. 3 along the AA direction is shown. As can be seen from FIG. 6 , the metal boss 20 includes a die-bonding region 201 in the middle portion for arranging the LED chip 30 , and the die-bonding region 201 includes a positive electrode die-bonding region 2011 and a negative electrode die-bonding region 2012 (positive electrode die-bonding region 2012 ) disposed oppositely. The positions of the region 2011 and the negative electrode bonding region 2012 are not necessarily as shown in the figure. The right side is the positive electrode bonding region 2011, and the left side is the negative electrode bonding region 2012. The polarity of the bonding region is set on it by flip-chip. The positive and negative poles of the LED chip are determined by the positive and negative poles of the LED chip. This is only for the convenience of explaining and defining the positions of the positive and negative die-bonding regions in the figure.) The LED chip is flip-chipped, and its positive and negative poles are respectively connected to the positive and negative die-bonding regions 2011 and 2011. The negative electrode die-bonding region 2012 is connected. As shown in FIG. 6 , there is a second interval 102 between the positive electrode crystal-bonding region 2011 and the negative electrode crystal-bonding region 2012 , that is, there is a second distance L ₂ between the positive electrode crystal-bonding region 2011 and the negative electrode crystal-bonding region 2012 . The second distance L2 and the first distance L1 between the metal bosses 20 shown in FIG. ₂ can be determined according to the actual size of the LED chip and the size requirements of the packaged device to be formed.

Still referring to FIG. 6 , the edge portion of the metal boss 20 forms an isolation zone 203 , a recessed region 204 exists between the isolation zone 203 and the die-bonding region 201 , and the thickness of the recessed region is smaller than the thickness of the isolation zone 203 and the thickness of the die-bonding region 201 , The thickness of the isolation strip 203 and the die bonding region 201 are equal. Preferably, the height/width of the recessed area 204 is greater than or equal to 1/2, wherein the height of the recessed area 204 is equal to the height of the metal boss.

As shown in FIG. 6 , in this embodiment, the isolation belt 203 can be generally regarded as a two-part structure separated from each other. 2011 forms a continuous structure, and the other part forms a continuous structure with the negative electrode crystal solid region 2012 . Since the positive crystal bonding area 2011 and the negative crystal bonding area 2012 are connected to the positive electrode and the negative electrode of the LED chip respectively, and the two parts of the isolation belt form a continuous structure in the positive crystal bonding area 2011 and the negative crystal bonding area 2012 respectively, the isolation belt 203 It can be used as the electrode area 202 of the LED chip, and the part of the isolation belt continuous with the anode die-bonding area 2011 forms the positive electrode area of the LED chip, and the part of the isolation belt continuous with the anode die-bonding area 2012 forms the negative electrode area of the LED chip.

In this embodiment, a thin metal layer may be formed on the substrate 10 by an ion sputtering process first, and then the metal bosses 20 described in this embodiment may be formed by an electroplating or electroless plating process.

Referring also to FIG. 6 , in a preferred embodiment of this embodiment, an electrostatic protection device (Zener) packaging area 205 is formed on one side of the isolation strip 203 of the metal boss 20 , and the protection device packaging area 205 is packaged and protected The device plays a protective role for the entire LED package device. For example, the electrostatic device package area 205 can be formed at one side and corner of the isolation belt.

Then, as shown in FIG. 4 , the LED chip 30 , the metal boss 20 and the substrate 10 are covered with an encapsulant 40 . In a preferred embodiment of this embodiment, the encapsulant 40 is preferably a fluororesin material. The LED package covered with the encapsulation compound 40 is heated, for example, solution baking or hot pressing can be performed, so that the encapsulation compound 40 fills the first space 101 between the metal bosses 20 and the die-bonding area 201 inside the metal bosses. The second spacer 102, the concave region 204 between the isolation strip and the die-bonding region, and the gap between the two parts of the isolation strip 203, etc. After the heating process, good contact is formed between the encapsulating compound and the LED chip 30 , the metal boss 20 and the substrate. Then, the package body is cooled, and the package colloid adheres to the LED chip 30 , the metal boss 20 and the substrate 10 , and the package jelly fills the above-mentioned metal boss concave areas, gaps, etc., between the metal boss 20 and the metal boss 20 A snap connection can be formed, and the snap connection can increase the adhesive force of the encapsulation colloid, and effectively prevent the encapsulation body from vibrating and falling off during transportation or transmission.

In addition, because the expansion coefficient of ceramics is 1.8*10 ^-5 /°C, and the thermal expansion coefficient of fluororesin materials is generally 8-12*10 ^-5 /°C, the expansion coefficients of the two are quite different. When there is a large temperature change during cooling and cooling, the snap connection between the encapsulant 40 and the metal boss 20 can effectively reduce the deformation of the encapsulant 40 outside the metal boss 20 , thereby avoiding the occurrence of the gap between the encapsulant 40 and the substrate 10 . gap.

In a preferred embodiment of this embodiment, the metal bosses 20 have the same thickness, and the thickness of the metal bosses 20 is greater than or equal to 0.1 times the thickness of the encapsulant 40 , and the thickness of the metal bosses 20 and the edges of the encapsulant 40 is less than or equal to 0.1 mm , the distance between the edge of the metal boss 20 and the edge of the encapsulant 40 is less than or equal to 0.1mm, the width of the metal boss 20 is greater than or equal to 1/3 of the thickness of the encapsulant, and the width of the metal boss 20 refers to the metal boss 20 The width perpendicular to the cutting direction (refer to the cutting direction F shown in FIG. 4 ).

In another preferred embodiment of this embodiment, as shown in FIG. 5 , the substrate 10 of the LED package device further includes a conductive portion 60 , and the conductive portion 60 includes a positive electrode conductive portion and a positive electrode region corresponding to the positive electrode region and the negative electrode region respectively. Negative conductive part. The conductive portion 60 includes a conductive hole or the like passing through the base 10 .

and a pad 50 formed on the lower surface of the substrate 10 , the pad 50 includes a positive electrode pad and a negative electrode pad that are respectively connected to the positive electrode conductive portion and the negative electrode conductive portion of the conductive portion 60 . For example, in the structure shown in FIG. 6 , the conductive part 60 is connected to the positive and negative electrodes of the LED chip through the isolation belt 203 , and the bonding pad 50 is connected to the conductive part 60 , so as to realize the connection between the bonding pad and the positive electrode and negative electrode of the LED chip. Connected.

The bonding pads 50 formed on the lower surface of the substrate 10 as described above facilitate the subsequent formation of the LED package device into a subsequent surface mount device. And, for example, when the above-mentioned LED package device is soldered to a PCB (printed circuit board) plate by using reflow soldering technology, the snap connection formed between the packaging compound 40 and the metal boss 20 makes the packaging compound connect with the substrate, the metal boss and the LED. The tight bonding between chips will not produce defects such as air bubbles during the above reflow soldering process, so the yield of later products can be improved accordingly.

Embodiment 8

This embodiment provides an LED package device, and the similarities with Embodiment 5 will not be repeated, but the differences are:

In this embodiment, the isolation strips 203a of the metal bosses 20a have various pattern structures. As shown in FIG. 7, the isolation strip 203a includes a zigzag pattern 2031a. The zigzag pattern 2031a may be inward zigzags or outward zigzags.

After the above-mentioned zigzag pattern is formed, the encapsulant is filled in the gap formed by the zigzag pattern, thereby enhancing the snap connection between the encapsulant and the metal boss 20a, and enhancing the adhesion between the encapsulant and the metal boss 20a and the substrate 10. Knot.

In a preferred embodiment of this embodiment, as shown in FIG. 8 , the isolation strip 203b includes a hollow pattern 2031b. The hollow pattern 2031b may be a rectangular hollow pattern, or a hollow pattern such as a diamond, an ellipse, and a circle.

In this embodiment, as shown in FIG. 9 , in order to prevent the L-shaped area of the isolation strip 203c of the metal boss 20c from being too large, a hollow pattern, such as a circular and/or rectangular hollow pattern, is included on one side of the L-shaped area. 2031c.

After the hollow pattern is formed, the encapsulant is filled in the holes formed by the hollow pattern, thereby enhancing the snap connection between the encapsulant and the metal boss 20 b and enhancing the bonding between the encapsulant and the metal boss 20 b and the substrate 10 .

Embodiment 9

As shown in FIG. 10 , in this embodiment, the die-bonding region 201d of the metal boss 20d and the isolation strip 203d also include continuous structures, and there is no recessed region therebetween. The crystal-bonding region 201d and the isolation belt 203d form two parts isolated from each other as a whole, and the two parts respectively include the positive crystal-bonding region 2011d and the negative-electrode crystal-bonding region 2012d, and the part of the isolation belt 203d that is continuous with the positive crystal-bonding region 2011d can be used as the The positive electrode region of the LED chip and the portion of the isolation strip 203d that is continuous with the negative electrode die-bonding region 2012d can be used as the negative electrode region of the LED chip.

In this embodiment, a hollow pattern is also formed in the isolation strip 203d of the metal boss 20d, such as a rectangular hollow pattern 2031d shown in FIG. 10 . Of course, hollow patterns of other figures such as diamonds, circles, ovals and the like may also be included.

The encapsulant is filled in the holes formed by the hollow pattern, thereby enhancing the snap connection between the encapsulant and the metal boss 20 d and enhancing the bonding between the encapsulant, the metal boss 20 d and the substrate 10 .

Embodiment ten

This embodiment also provides an LED package device, and the similarities with the fifth embodiment will not be repeated, but the differences are:

As shown in FIG. 11 , the metal boss 20e also includes a die-bonding region 201e and an isolation strip 203e. In this embodiment, the isolation strip 203e is a closed structure and is isolated from the die-bonding region 201e, with a recessed region therebetween. 204 to isolate. The isolation belt 203e may include a pattern structure, such as the rectangular hollow pattern 2031e shown in FIG. 11 , and of course, may also include hollow patterns of other shapes (eg, rhombus, oval, circle, etc.). Also, a zigzag pattern or the like similar to that shown in FIG. 7 may be included.

In this embodiment, since the die-bonding region 201e and the isolation strip 203e are separated from each other, they are not continuous in structure, so they cannot form a conducting structure. Therefore, in this embodiment, the connection with the LED chip is The positive crystal-bonding region connected with the positive electrode forms the positive electrode region of the LED chip, and the negative crystal-bonding region connected with the negative electrode of the LED chip forms the negative electrode region of the LED chip.

In the packaged device described in this embodiment, the conductive portion communicates with the positive electrode and the negative electrode of the LED chip through the die-bonding region 201e, and the pad communicates with the conductive portion, so as to communicate with the positive electrode and the negative electrode of the LED chip.

Embodiment 11

This embodiment also provides an LED package device, which also includes:

As shown in FIG. 12 , a substrate 10 is provided. The substrate 10 includes an upper surface and a lower surface. The substrate 10 can be made of materials commonly used in the art, such as ceramics or silicon, preferably a ceramic substrate.

At least one metal boss 20 f is formed on the upper surface of the substrate 10 .

The LED chip 30f is provided on the metal boss 20f.

The similarities between this embodiment and the above-mentioned Embodiment 7 to Embodiment 10 will not be repeated, but the differences are:

In this embodiment, the LED chip 30f is preferably a vertical LED chip. In this embodiment, the die-bonding region 201f of the metal boss 20f and the isolation strip 203f form a structure separated from each other, with a recessed region 204 therebetween and They are isolated from each other by recessed regions 204 . And the isolation strip 203f includes a hollow pattern, such as the rectangular hollow pattern 2031f shown in FIG. 12 . Of course, hollow patterns of other figures (eg, circle, diamond, ellipse, etc.) can also be included.

As shown in FIG. 12 , the die bonding region 201f also includes a positive die bonding region 2011f and a negative electrode die bonding region 2012f. The vertical LED chip 30f of this embodiment is disposed in the positive die bonding region 2011f, and one side of the positive electrode die bonding region 2011f is located. A part of the region includes an extension portion, preferably, the extension portion extends from a region smaller than 1/2 of the width of the positive electrode die-bonding region 2011f on the side of the positive electrode die-bonding region 2011f. The region on the left which is smaller than 1/2 of the width of the positive electrode die-bonding region 2011f extends downward. The extended portion forms a positive electrode region 202f-P that is in contact with the positive electrode of the LED chip. As shown in FIG. 12 , the negative electrode die-bonding region 2012f is formed on the same side of the positive electrode region 202f-P and adjacent to the positive electrode region 202f-P, and the negative electrode die-bonding region 2012f is formed with the isolation belt 203f and the positive electrode region 202f-P They are spaced apart from each other and form independent structures. A negative electrode bonding wire 206f is formed between the negative electrode surface of the LED chip 30f and the negative electrode die-bonding region 2012f for electrically conducting the two. At this time, the negative electrode die-bonding region 2012f forms the negative electrode region 202f-N of the LED chip 30f. Metal bosses 20f also include protective device encapsulation regions 205f formed in the positive electrode regions 202f-P and negative electrode regions 202f-N.

As shown in FIG. 12 , preferably, the total width of the positive electrode region 202f-P, the negative electrode region 202f-N and the space therebetween does not exceed the width of the region where the LED chip is arranged in the positive die bonding region 2011f.

As shown in FIG. 13 , in a preferred embodiment of this embodiment, when forming the metal boss 20g, the negative electrode regions 202f-N shown in FIG. 12 are not formed separately, but on the negative electrode surface of the LED chip 30f and the isolation A negative electrode bonding wire 206g is formed between the strips 203g to make the two electrically conductive. At this time, the isolation strip 203g simultaneously serves as the negative electrode region 202g-N of the LED chip 30f. And a protection device encapsulation region 205g is formed in the positive electrode regions 202g-P and the isolation strips 203g. In addition, a hollow pattern 2031g is also formed in the isolation belt 203g, such as the rectangular hollow pattern 2031g shown in FIG. 13 . Of course, hollow patterns of other shapes (such as circles, diamonds, ovals, etc.) can also be included.

The encapsulant is filled in the holes formed by the hollow pattern, thereby enhancing the snap connection between the encapsulant and the metal boss 20f (or 20g), and enhancing the connection between the encapsulant and the metal boss 20f (or 20g) and the substrate 10 . bond.

Embodiment 12

This embodiment also provides an LED package device, and the similarities with the eleventh embodiment will not be repeated, but the differences are:

The packaged device of this embodiment includes a single light-emitting body device shown in FIG. 14 , and the single light-emitting device includes a middle position along the first interval 101 shown in FIG. 2 , and is cut from the packaged device along the cutting direction F shown in FIG. 4 . out of a single luminaire. Since a snap connection is formed between the encapsulating compound 40 and the metal boss 20 , the encapsulated device is less likely to have problems such as peeling or peeling of the encapsulating compound during use.

As mentioned above, the LED package device and the manufacturing method thereof of the present invention at least include the following beneficial effects:

The method of the present invention forms patterns in the metal bosses, and the encapsulation colloid not only covers the LED chip, the metal bosses and the substrate, but also fills the gaps between the metal bosses and the gaps or holes formed by the patterns in the metal bosses. A snap connection is formed between the colloid and the metal boss. The adhesive force of the encapsulation colloid is increased, which effectively prevents the encapsulation colloid from vibrating and falling off during transportation or transmission.

Due to the close bonding between the encapsulation colloid, the LED chip, the metal boss and the substrate, defects such as reflow soldering bubbles are effectively avoided when forming pads on the lower surface of the substrate by reflow soldering, thereby ensuring the yield of subsequent products.

During cutting, the above-mentioned snap connection between the encapsulation colloid and the metal boss can play a blocking role, effectively reducing the deformation amount at the bottom of the encapsulating colloid, and ensuring that the encapsulating colloid and the substrate in the die-bonding area close to the metal boss are closely combined. Will not peel off from the substrate due to cutting force.

When the package body undergoes a large temperature change, although the thermal expansion coefficients of the ceramic substrate and the fluororesin material encapsulant used in the present invention are quite different, since a snap connection can be formed between the encapsulant and the metal boss, it is possible to Effectively reduce the deformation of the encapsulation compound outside the metal boss, thereby avoiding a gap between the encapsulation compound and the substrate.

In addition, the preparation method of the LED packaging device of the present invention is relatively simple, and has good packaging effect, which is beneficial to reduce packaging costs and increase economic benefits.

The above-mentioned embodiments merely illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed in the present invention should still be covered by the claims of the present invention.

Claims (12)

1. an LED package device, is characterized in that, comprises: a substrate, including an upper surface and a lower surface, the substrate is ceramic or silicon; a metal boss disposed on the upper surface of the substrate; an LED chip arranged on the metal boss; an encapsulation colloid covering the LED chip, the metal boss and the substrate, the encapsulation colloid being a fluororesin; Wherein, the metal boss includes a die-bonding area located in the middle part, and an isolation strip located at the edge part, the isolation strip has a pattern structure, and the encapsulant forms a card with the metal boss with the pattern structure Buckle connection. 2 . The LED package device of claim 1 , wherein the metal boss comprises a metal plating layer formed on the substrate. 3 . 3 . The LED packaging device according to claim 1 , wherein the thickness of the metal boss is greater than or equal to 0.1 times the thickness of the packaging colloid. 4 . 4 . The LED package device according to claim 1 , wherein the distance between the edge of the metal boss and the edge of the encapsulating compound is less than or equal to 0.1 mm. 5 . 5 . The LED package device according to claim 1 , wherein the width of the metal boss is greater than or equal to 1/3 of the thickness of the encapsulating compound, wherein the width of the metal boss refers to the metal boss. 6 . Width perpendicular to the cutting direction. 6 . The LED package device according to claim 1 , wherein the die bonding region comprises a positive electrode bonding region and a negative electrode bonding region which are oppositely disposed and separated from each other by a second interval, wherein the positive electrode bonding region The positive electrode of the LED chip is connected, and the negative electrode die-bonding region is connected to the negative electrode of the LED chip. 7 . The LED package device according to claim 1 , wherein the metal boss is two parts isolated and independent from each other, and each of the two parts of the metal boss has a pattern structure and a die bonding area. 8 . . 8. The LED package device according to claim 1 or 7, wherein the pattern structure comprises a zigzag pattern or a hollow pattern, wherein the zigzag pattern comprises a circumference along an edge portion of the metal boss Inward serrations or circumferentially outward serrations. 9 . The LED package device according to claim 1 or 7 , wherein the metal boss has four edges, and the four edges of the metal boss all have the pattern structure. 10 . 10 . The LED package device according to claim 7 , wherein the encapsulating colloid is solution-baked or hot-pressed to fill the space between the two parts of the metal boss and fill the holes formed by the pattern. 11 . or a slot to form the snap connection. 11. The LED package device of claim 1, wherein the substrate comprises: a conductive portion located in the substrate and penetrating the substrate, the conductive portion comprising a positive conductive portion and a negative conductive portion respectively conducting with the positive electrode and the negative electrode of the LED chip; and A pad located on the lower surface of the substrate, the pad includes a positive electrode pad and a negative electrode pad that are respectively connected to the positive electrode conductive portion and the negative electrode conductive portion. 12. The LED package device according to claim 1, wherein the LED is a deep ultraviolet LED.

Images