CN112835271A - Exposure method of lithography apparatus with rotary exchange double workpiece stage - Google Patents
Exposure method of lithography apparatus with rotary exchange double workpiece stage Download PDFInfo
- Publication number
- CN112835271A CN112835271A CN202110067156.1A CN202110067156A CN112835271A CN 112835271 A CN112835271 A CN 112835271A CN 202110067156 A CN202110067156 A CN 202110067156A CN 112835271 A CN112835271 A CN 112835271A
- Authority
- CN
- China
- Prior art keywords
- exposure
- workpiece
- wafer
- measurement
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000001459 lithography Methods 0.000 title claims abstract description 20
- 238000005259 measurement Methods 0.000 claims abstract description 78
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 230000010363 phase shift Effects 0.000 claims description 14
- 230000004075 alteration Effects 0.000 claims description 11
- 230000009977 dual effect Effects 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 5
- 238000012546 transfer Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 8
- 238000011161 development Methods 0.000 description 5
- 210000000887 face Anatomy 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明提供一种具有旋转交换双工件台的光刻装置的曝光方法，所述光刻装置包括曝光单元，所述曝光单元包括测量工位和曝光工位，所述测量工位执行步骤包括第一测量步骤和第二测量步骤；所述曝光工位执行步骤包括第一曝光步骤和第二曝光步骤；其中，所述第一曝光步骤包括曝光前准备、所述第一或第二工件台的对准；所述第二曝光步骤包括对所述待处理晶圆执行曝光工艺；所述第一及第二工件台并行作业，同步执行所述第一测量步骤与所述第一曝光步骤；或，同步执行所述第二测量步骤与所述第二曝光步骤，从而提高曝光精度及优化产能瓶颈。
The present invention provides an exposure method of a lithography device with a rotary exchange double workpiece stage, the lithography device includes an exposure unit, the exposure unit includes a measurement station and an exposure station, and the execution step of the measurement station includes the following steps: A first measurement step and a second measurement step; the exposure station execution step includes a first exposure step and a second exposure step; wherein, the first exposure step includes pre-exposure preparation, the first or second workpiece stage The second exposure step includes performing an exposure process on the to-be-processed wafer; the first and second workpiece stages operate in parallel, and the first measurement step and the first exposure step are performed synchronously; Or, the second measurement step and the second exposure step are performed synchronously, so as to improve the exposure accuracy and optimize the capacity bottleneck.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing photoetching equipment, in particular to an exposure method of a photoetching device with a rotary exchange double-workpiece table.
Background
In order to improve the productivity, the conventional lithography machine generally adopts a dual stage technique like ASML (American society for Mobile communications) in the Netherlands, or adopts a tandem stage technique of Nikon in Japan.
A double-workpiece-table photoetching machine of Holland ASML company is provided with a workpiece table on a measuring station and an exposure station respectively, a silicon wafer is placed on each workpiece table, and the silicon wafer on the measuring station is aligned and leveled with a coordinate and is aligned with a mask plate and exposed; and then, the two workpiece tables exchange stations in a horizontal moving mode, then the exposed silicon wafers exchanged to the measuring stations are subjected to coordinate alignment and leveling, and meanwhile, the silicon wafers exchanged to the exposure stations are subjected to coordinate alignment and leveling to be subjected to mask alignment and exposure. The horizontal moving mode enables the exposed silicon wafer to undergo coordinate alignment and leveling twice, and the beat is slow.
A tandem workpiece stage lithography machine of Nikon corporation of japan is provided with a workpiece stage and a measurement stage. Wherein, the upper and lower pieces of silicon chip and pre-alignment are carried out on the workpiece table; and the measuring table is moved to an exposure station and an alignment station in sequence to finish the alignment of the mask. And then, aligning and leveling the silicon wafer on the workpiece table, and then exposing the silicon wafer, wherein the exposure station and the alignment station of the tandem workpiece table are operated independently, and the beat is slower.
Therefore, it is one of the objectives of the development of the lithography machine technology to improve the operating efficiency of the dual-stage machine, and the stage-changing efficiency directly affects the operating efficiency of the dual-stage machine and the yield of the lithography machine.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned drawbacks of the prior art and providing an exposure method for a lithographic apparatus having a rotary swap dual stage.
In order to achieve the above object, the present invention provides an exposure method for a lithographic apparatus having a rotary exchange dual stage, wherein the lithographic apparatus includes an exposure unit, the exposure unit includes a measurement station and an exposure station, the dual stage includes a first and a second stages respectively disposed below the measurement station and the exposure station, the first and the second stages are respectively disposed at two sides of a rotating part and symmetrically disposed, and the rotating part drives the first and the second stages to rotate relative to the rotating part; the measuring station executing step comprises a first measuring step and a second measuring step; the exposure station execution step comprises a first exposure step and a second exposure step; wherein the first measuring step comprises measuring the position and orientation of the wafer to be processed relative to the first or second workpiece stage; the second measuring step comprises measuring the deformation amount of the wafer to be processed; the first exposure step comprises pre-exposure preparation, alignment of the first or second workpiece stage; the second exposure step comprises an exposure process performed on the wafer to be processed; the first and second workpiece stages perform parallel operation, and the first measurement step and the first exposure step are synchronously executed; or, the second measuring step and the second exposing step are executed synchronously.
Preferably, a measuring bracket is arranged at the top of the measuring station, and two opposite leveling sensors and a silicon wafer alignment sensor positioned between the leveling sensors are arranged on the measuring bracket; the leveling sensor vertically faces downwards to the outer edge of the wafer to be processed, and the silicon chip alignment sensor vertically faces downwards to the circle center of the wafer to be processed.
Preferably, the first and second workpiece tables are respectively provided with a measurement and control sheet, and the measurement and control sheets are positioned at the outer edges of the first and second workpiece tables; the measurement and control sheet is also arranged on the rotating part; and the measurement and control sheet is provided with a first phase shift grating and a second phase shift grating.
Preferably, 3 zero interferometers are respectively arranged above the first workpiece table and the second workpiece table, and the zero interferometers are arranged along the periphery of the wafer to be processed; an alignment mark is arranged on the wafer to be processed; the photomask is provided with a mask reference grating, the photomask is arranged on a mask platform, the mask platform is further provided with an energy sensor and a first reference grating, the energy sensor is respectively arranged on two sides of the photomask, the first reference grating is arranged on the upper side of the photomask, and the lower side of the photomask is further respectively provided with a second reference grating, a third reference grating and a fourth reference grating from top to bottom.
Preferably, the alignment of the first or second workpiece stage comprises initial zero position alignment of the workpiece stage and fine alignment of the workpiece stage; the initial zero position of the workpiece platform is aligned to obtain the initial position of the wafer to be processed through the zero position interferometer; the fine alignment of the workpiece stage comprises the alignment of the first reference grating with the first phase shift grating and the alignment of the second reference grating with the second phase shift grating.
Preferably, after the initial zero alignment of the workpiece stage, the first exposure step further comprises a mirror aberration measurement, and the aberration parameter in the exposure process is adjusted by the third reference grating.
Preferably, after the alignment of the first or second workpiece stage, the first exposure step further includes exposure energy correction, which measures the exposure slit uniformity of the exposed wafer in the exposure process through the fourth reference grating and calibrates the exposure slit uniformity of the wafer to be processed.
Preferably, before the first exposure step, the exposure station performing step further includes an exposure energy calibration step, and the exposure energy calibration step is performed in a process in which the rotating portion rotates the first and second stages relative to the rotating portion.
Preferably, the first and second workpiece stages are further provided with mask measurement gratings; and the exposure energy calibration step sets the power of a light source in an exposure process through the mask reference grating, the mask measurement grating and the energy sensor.
Preferably, the lithography apparatus further comprises a transfer unit, wherein the transfer unit is used for transferring the exposed wafer on the first or second workpiece stage to a post-station; or, the wafer to be processed is transmitted to the first or second workpiece stage from the previous station, and the wafer to be processed is positioned and the positioning parameters are generated.
It can be seen from the above technical solutions that the present invention provides an exposure method for a lithographic apparatus having a rotary exchange dual stage, in which the first measurement step and the first exposure step are synchronously performed through parallel operations of a first and a second stage; or, the second measurement step and the second exposure step are executed synchronously, so that the exposure precision is improved, and the bottleneck of the production capacity is optimized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of a measurement mount, first and second workpiece stages according to an embodiment of the invention;
FIG. 2 is a schematic view of first and second workpiece stages according to an embodiment of the invention;
FIG. 3 is a diagram of a photomask platform according to an embodiment of the invention.
Detailed Description
In order to make the contents of the present invention more comprehensible, the present invention is further described below with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
In the following detailed description of the embodiments of the present invention, in order to clearly illustrate the structure of the present invention and to facilitate explanation, the structure shown in the drawings is not drawn to a general scale and is partially enlarged, deformed and simplified, so that the present invention should not be construed as limited thereto.
In order to make the objects, technical solutions and advantages of the present invention clearer, the following description further refers to the accompanying drawings, where fig. 1 is a schematic view of a measurement support, a first workpiece stage and a second workpiece stage according to an embodiment of the present invention; FIG. 2 is a schematic view of first and second workpiece stages according to an embodiment of the invention; FIG. 3 is a diagram of a photomask platform according to an embodiment of the invention.
The lithographic apparatus of the present invention includes a transfer unit and an exposure unit. The transmission unit is used for transmitting the exposed wafer on the first or second workpiece platform to a rear station; or, the wafer to be processed is transmitted to the first or second workpiece stage from the previous station, and the wafer to be processed is positioned and the positioning parameters are generated. The conveying unit includes electric robotic arm, in this embodiment, the exposure unit is connected with the development unit, the conveying unit is located the exposure unit with between the development unit, electric robotic arm is used for conveying the wafer that has exposed on first or the second work piece bench extremely the development unit wait to develop the station, or certainly the development unit wait to photoetch the station conveying and wait to process the wafer extremely first or the second work piece bench. The electric mechanical arm is controlled by the brushless permanent magnet servo motor and the closed-loop control circuit and has more than two degrees of freedom, and the electric mechanical arm prevents overstock or overlong waiting time of the wafer to be processed caused by overlong measurement or exposure time and delayed and interrupted transmission signals. In another embodiment, the exposed wafer is transferred to the first or second workpiece stage again by the transfer unit for a re-exposure process, and the specific front station and the rear station depend on the actual production situation and are not limited herein.
The exposure unit includes measurement station and exposure station, and double-workpiece-table is located including corresponding the branch measurement station with first and second workpiece-table of exposure station below, first and second workpiece-table branch are located the rotating part both sides, and the symmetry sets up. The rotating part drives the first and second workpiece stages to rotate relative to the rotating part. In another embodiment, the first and second workpiece stages (short stage) are disposed together on both ends of one rotary stage (long stage). The rotary platform can drive the first workpiece platform and the second workpiece platform to exchange positions between the measuring station and the exposure station through horizontal rotation. The first and second workpiece stages are respectively provided with a measurement and control sheet, the measurement and control sheet is positioned at the outer edges of the first and second workpiece stages, and the measurement and control sheet is provided with a first phase shift grating and a second phase shift grating.
As shown in fig. 1, in the embodiment of the present invention, a first workpiece stage 1 disposed on the left side and a second workpiece stage 2 disposed on the right side are separately provided, a rotating portion connecting the first workpiece stage 1 and the second workpiece stage 2 is disposed in the middle, and measurement and control pieces are disposed on the left and right sides of the first workpiece stage 1 and the right side of the second workpiece stage 2, wherein the measurement and control pieces disposed on the right side of the first workpiece stage 1 are disposed on the rotating portion. In this embodiment, a description is given of a case where the first workpiece stage 1 corresponds to a measurement station and the second workpiece stage 2 corresponds to an exposure station, and the first and second workpiece stages perform a relative horizontal rotation after completing operations for respective wafers to be processed, so as to realize position exchange between the measurement station and the exposure station, which is not limited herein.
The top of the measuring station is provided with a measuring bracket, and the measuring bracket is provided with two opposite leveling sensors and a silicon wafer alignment sensor positioned between the leveling sensors; the leveling sensor vertically faces downwards to the outer edge of the wafer to be processed on the first workpiece table 1, and the silicon chip alignment sensor vertically faces downwards to the circle center of the wafer to be processed. Correspondingly measuring the measurement and control sheet through the leveling sensor to obtain the vertical distance between the first or second workpiece table and the measurement support; and measuring the measurement and control wafer through the silicon wafer alignment sensor to obtain the position of the first or second workpiece stage relative to the horizontal direction of the measurement support.
And 3 zero-position interferometers are respectively arranged above the first workpiece table and the second workpiece table and are arranged along the periphery of the wafer to be processed.
As shown in fig. 2, two null interferometers are respectively disposed above two corners of the outer edge of the first and second stages, and a third null interferometer is disposed above one corner of the inner edge connected to the rotary part, and the third null interferometer may be disposed above any one of the two corners of the inner edge connected to the rotary part. In the embodiment, the mask measuring grating is arranged between the zero position interferometer on one side of the first workpiece platform and the wafer to be processed and comprises one or two combinations of a small-hole light intensity sensor and an exposure slit sensor measuring grating. As shown in fig. 2, a transmission image sensor measurement grating is further disposed between the null interferometer on one side of the first and second workpiece stages and the wafer to be processed. In this embodiment, the rotating part is provided with a pupil aberration sensor measurement grating, which is provided on a side adjacent to the third null interferometer for alignment of the rotating part, as shown in fig. 2.
And a mask reference grating is arranged on the photomask and used for aligning the measurement and control wafer so as to coarsely position the photomask platform relative to the first or second workpiece stage. The photomask is arranged on the mask platform, the mask platform is further provided with an energy sensor and a first reference grating, the energy sensor is respectively arranged on two sides of the photomask, the first reference grating is arranged on the upper side of the photomask, and a second reference grating, a third reference grating and a fourth reference grating are further arranged on the lower side of the photomask from top to bottom.
As shown in fig. 3, a photomask is electrostatically adsorbed on the mask stage, energy sensors are respectively disposed on the left and right sides of the photomask, a first reference grating is disposed on the upper portion of the photomask, and a second reference grating, a third reference grating and a fourth reference grating are disposed on the photomask stage from top to bottom. The second reference grating and the first reference grating work together and are used for aligning the first workpiece table and the second workpiece table with the photomask. The third reference grating is used for measuring the mirror aberration; the fourth reference grating is used for energy control in an exposure process.
The foregoing is merely an example of the present invention and is not intended to limit the invention thereto. The exposure method of the lithographic apparatus with a rotary exchange duplex stage according to the present invention will be described below with reference to specific embodiments.
And conveying and positioning the wafer to be processed from the front station through the conveying unit, and generating positioning parameters.
In this embodiment, the transfer unit includes an atmospheric transfer unit and a vacuum transfer unit, and the atmospheric transfer unit and the vacuum transfer unit are respectively provided with an electro-mechanical arm with more than two degrees of freedom to transfer the wafer to be processed or the exposed wafer. The wafer to be processed firstly passes through the atmospheric transmission unit, then is transmitted to the vacuum transmission unit, and then is transmitted to the measurement station of the exposure unit through the electric mechanical arm.
The measuring station performing step includes a first measuring step and a second measuring step.
First, a first wafer to be processed is transferred to a measurement station of an exposure unit through the robot arm, and a first measurement step is performed on a first or second workpiece stage.
The first measuring step comprises measuring the position and the direction of the wafer to be processed relative to the first or the second workpiece table; the second measuring step includes measuring a deformation amount of the wafer to be processed.
Specifically, according to first positioning information of the first wafer to be processed on the transmission unit, performing first pre-alignment on the first wafer to be processed, and measuring an initial position of the first wafer to be processed through a zero interferometer on the first or second workpiece stage; measuring a measurement and control sheet on the first or second workpiece table through the leveling sensor to obtain the vertical distance of the first or second workpiece table relative to the measurement support; and measuring the measuring and controlling sheet on the first or second workpiece table through the silicon wafer alignment sensor to obtain the horizontal position of the first workpiece table relative to the measuring support.
And then, carrying out coarse height positioning and coarse alignment on the first wafer to be processed.
Specifically, a leveling sensor measures an edge non-leveling area of a first wafer to be processed. Aligning and scanning the plane of the initially positioned silicon wafer on a focal plane to determine the height of the first wafer to be processed; the first wafer to be processed is provided with an alignment mark, the alignment mark is measured through a silicon wafer alignment sensor, the rotation angle of the silicon wafer is preliminarily determined, and preparation is made for subsequent fine alignment.
Then, a second measuring step is performed on the first wafer to be processed, wherein the second measuring step comprises measuring the deformation quantity of the wafer to be processed.
Specifically, the second measuring step measures the surface flatness of the first wafer to be processed, and the first wafer to be processed is further translated below the leveling sensor, thereby measuring the vertical height of the first wafer to be processed with respect to the first or second workpiece stage.
After the second measurement step is completed, the rotating part drives the first and second workpiece stages to rotate, and the first or second workpiece stage rotates to the exposure station from the measurement station. Meanwhile, the transmission unit transmits a second wafer to be processed to the idle second or first workpiece stage, the second wafer to be processed performs a first measurement step and a second measurement step at the measurement station, and the step of the second wafer to be processed at the measurement station is the same as the step of the first wafer to be processed at the measurement station, which is not repeated herein. In this embodiment, the rotating part top is equipped with cylindricality grating chi, through corresponding the rotatory magnetic levitation motor that cylindricality grating chi set up drives first and second work piece platform is at the switching between measurement station and the exposure station.
And the first wafer to be processed is positioned at an exposure station after being rotated on the first or second workpiece table, and a first exposure step and a second exposure step are executed. The first exposure step comprises pre-exposure preparation, alignment of the first or second workpiece stage; the second exposure step includes performing an exposure process on the wafer to be processed.
In this embodiment, before the first exposure step, the exposure station performing step further includes an exposure energy calibration step, and the exposure energy calibration step is performed in a process in which the rotating portion drives the first and second stages to rotate relative to the rotating portion. Mask measurement gratings are also arranged on the first workpiece table and the second workpiece table; and the exposure energy calibration step sets the power of a light source in an exposure process through the mask reference grating, the mask measurement grating and the energy sensor.
Specifically, the photomask is provided with a mask reference grating, and the mask reference grating on the photomask, the mask measurement grating on the first or second workpiece stage and the two energy sensors on the photomask platform are used together to complete the process. In this embodiment, the mask measurement grating includes a small-hole light intensity sensor and an exposure slit sensor measurement grating, and the source energy control and dose evaluation of the exposed wafer during the exposure process are obtained by measuring the edge of the exposure slit, so as to prepare the first wafer to be processed before exposure. This step is done synchronously during the rotation of the first or second workpiece stage from the measurement station to the exposure station.
And then, preparing the first wafer to be processed before exposure, namely adjusting the exposure energy and the exposure light intensity required by the exposure process by the exposure unit according to the exposure energy calibration step.
Then, executing alignment of a first or second workpiece table, wherein the alignment of the first or second workpiece table comprises initial zero position alignment of the workpiece table and fine alignment of the workpiece table; the initial zero position of the workpiece platform is aligned to obtain the initial position of the wafer to be processed through the zero position interferometer; the fine alignment of the workpiece stage comprises the alignment of the first reference grating with the first phase shift grating and the alignment of the second reference grating with the second phase shift grating.
Specifically, the initial position of the first wafer to be processed is measured by three null interferometers, after the initial null alignment of the workpiece table, the first exposure step further includes mirror aberration measurement, and aberration parameters in the exposure process are adjusted by the third reference grating. Under the condition of higher energy and light intensity, the mirror surface of the exposure equipment is heated and needs to be compensated by related aberration parameters. And the exposure quality is ensured by carrying out mirror aberration measurement on the first wafer to be processed.
And then, performing fine workpiece stage alignment, wherein the fine workpiece stage alignment is performed by aligning the first phase shift grating with the first reference grating, aligning the second reference grating with the second phase shift grating, and performing precise positioning on the photomask and the first or second workpiece stage to obtain an optimal imaging position relative to the exposure stage.
Then, exposure energy correction is performed. Specifically, the fourth reference grating measures the uniformity of the exposure slit of the exposed wafer in the exposure process, and calibrates the uniformity of the exposure slit of the wafer to be processed. Preferably, the exposure energy correction is performed on each wafer to be processed. It should be noted that the first wafer to be processed completes the first exposure step on the first or second workpiece stage; and the second wafer to be processed is parallelly and synchronously subjected to a first measurement step on the second or first workpiece table.
And finally, the first wafer to be processed executes a second exposure step, and the second wafer to be processed synchronously executes a second measurement step in parallel.
Then, the rotating part drives the first workpiece table and the second workpiece table to rotate, and the first workpiece table or the second workpiece table rotates from the exposure station to the measurement station; the second or first workpiece stage rotates from the measurement station to the exposure station. The transmission unit unloads the first wafer to be processed and transmits a third wafer to be processed to the first or second workpiece stage. The first and second stages have 6 degrees of freedom with respect to the rotary part, thereby realizing parallel operations of an exposure station and a measurement station.
In this embodiment, a plurality of batches of wafers to be processed are waiting for exposure by the exposure apparatus, and before each batch, the exposure apparatus performs alignment of the photomask and the first and second stages and wafer batch parameter fine-tuning.
Specifically, the alignment of the photomask and the first and second workpiece stages is the same as the alignment of the photomask of the first wafer to be processed and the first and second workpiece stages, which is not described herein again. The fine adjustment of the wafer batch parameters comprises the steps of aligning a TONG aberration sensor on the photomask to a measuring and controlling sheet on the first workpiece table and the second workpiece table to calibrate an objective lens system, optimizing mirror surface parameters to ensure the imaging effect and finish the precise alignment of the photomask platform and the first workpiece table and the second workpiece table.
The first measurement step and the first exposure step are synchronously executed through the parallel operation of the first workpiece table and the second workpiece table; or, the second measurement step and the second exposure step are executed synchronously, so that the exposure precision is improved, and the bottleneck of the production capacity is optimized.
The above description is only for the preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all the equivalent structural changes made by using the contents of the description and the drawings of the present invention should be included in the scope of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110067156.1A CN112835271B (en) | 2021-01-19 | 2021-01-19 | Exposure method for lithographic apparatus with rotary exchange double workpiece stage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110067156.1A CN112835271B (en) | 2021-01-19 | 2021-01-19 | Exposure method for lithographic apparatus with rotary exchange double workpiece stage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112835271A true CN112835271A (en) | 2021-05-25 |
| CN112835271B CN112835271B (en) | 2024-04-26 |
Family
ID=75928680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110067156.1A Active CN112835271B (en) | 2021-01-19 | 2021-01-19 | Exposure method for lithographic apparatus with rotary exchange double workpiece stage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112835271B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113625528A (en) * | 2021-08-13 | 2021-11-09 | 苏州耀佳金属科技有限公司 | An adjustable double table system for lithography machine |
| CN115236950A (en) * | 2022-08-03 | 2022-10-25 | 福建省晋华集成电路有限公司 | Positioning system and lithography equipment of motion table |
| WO2023020068A1 (en) * | 2021-08-16 | 2023-02-23 | 北京华卓精科科技股份有限公司 | Displacement measurement system and photolithography device |
| CN116679532A (en) * | 2023-05-18 | 2023-09-01 | 季华实验室 | A dynamic large-area focusing and leveling method for a lithography machine |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10125579A (en) * | 1996-10-21 | 1998-05-15 | Nikon Corp | Scanning exposure equipment |
| JPH11224854A (en) * | 1997-11-22 | 1999-08-17 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
| EP1037117A2 (en) * | 1999-03-08 | 2000-09-20 | Asm Lithography B.V. | Off-axis levelling in lithographic projection apparatus |
| KR20100019597A (en) * | 2008-08-11 | 2010-02-19 | 주식회사 동부하이텍 | Double exposure apparatus for photolithography process and double exposure method using thereof |
| CN104111596A (en) * | 2013-04-16 | 2014-10-22 | 上海微电子装备有限公司 | Apparatus for globally leveling lithography equipment, and method thereof |
| CN109856925A (en) * | 2019-03-22 | 2019-06-07 | 上海微电子装备（集团）股份有限公司 | Double-workpiece-table flexibility winding exposure device and exposure method |
| CN112083633A (en) * | 2020-09-30 | 2020-12-15 | 上海集成电路研发中心有限公司 | Photoetching device |
| CN112130425A (en) * | 2020-09-30 | 2020-12-25 | 上海集成电路研发中心有限公司 | Photoetching device |
-
2021
- 2021-01-19 CN CN202110067156.1A patent/CN112835271B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10125579A (en) * | 1996-10-21 | 1998-05-15 | Nikon Corp | Scanning exposure equipment |
| JPH11224854A (en) * | 1997-11-22 | 1999-08-17 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
| EP1037117A2 (en) * | 1999-03-08 | 2000-09-20 | Asm Lithography B.V. | Off-axis levelling in lithographic projection apparatus |
| KR20100019597A (en) * | 2008-08-11 | 2010-02-19 | 주식회사 동부하이텍 | Double exposure apparatus for photolithography process and double exposure method using thereof |
| CN104111596A (en) * | 2013-04-16 | 2014-10-22 | 上海微电子装备有限公司 | Apparatus for globally leveling lithography equipment, and method thereof |
| CN109856925A (en) * | 2019-03-22 | 2019-06-07 | 上海微电子装备（集团）股份有限公司 | Double-workpiece-table flexibility winding exposure device and exposure method |
| CN112083633A (en) * | 2020-09-30 | 2020-12-15 | 上海集成电路研发中心有限公司 | Photoetching device |
| CN112130425A (en) * | 2020-09-30 | 2020-12-25 | 上海集成电路研发中心有限公司 | Photoetching device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113625528A (en) * | 2021-08-13 | 2021-11-09 | 苏州耀佳金属科技有限公司 | An adjustable double table system for lithography machine |
| WO2023020068A1 (en) * | 2021-08-16 | 2023-02-23 | 北京华卓精科科技股份有限公司 | Displacement measurement system and photolithography device |
| CN115236950A (en) * | 2022-08-03 | 2022-10-25 | 福建省晋华集成电路有限公司 | Positioning system and lithography equipment of motion table |
| CN116679532A (en) * | 2023-05-18 | 2023-09-01 | 季华实验室 | A dynamic large-area focusing and leveling method for a lithography machine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112835271B (en) | 2024-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112835271A (en) | Exposure method of lithography apparatus with rotary exchange double workpiece stage | |
| TWI781467B (en) | Exposure apparatus | |
| US7289194B2 (en) | Positioning apparatus, exposure apparatus, and device manufacturing method | |
| JPH01161243A (en) | Apparatus and method for manufacturing large-area electronic device such as flat panel type display using aligned dual optical system with correlationship | |
| WO2019231518A1 (en) | Multi-substrate processing on digital lithography systems | |
| WO1999031462A1 (en) | Stage device and exposure apparatus | |
| US4598242A (en) | Mask feed method and apparatus for exposure replicate systems | |
| CN114624964A (en) | Exposure method and device | |
| JP2505952B2 (en) | Semiconductor manufacturing equipment | |
| TWI823216B (en) | A metrology apparatus and a metrology method | |
| US20040025322A1 (en) | Waffle wafer chuck apparatus and method | |
| JP6855008B2 (en) | Exposure equipment, flat panel display manufacturing method, device manufacturing method, and exposure method | |
| JPH11219999A (en) | Substrate delivery method and exposure apparatus using the method | |
| JP2756865B2 (en) | Exposure equipment | |
| JP2003133215A (en) | Exposure apparatus and exposure method | |
| KR20230152569A (en) | Lithography device, lithography method, and article manufacturing method | |
| JP2017215617A (en) | Substrate holding device | |
| JPH11354417A (en) | Scanning exposure apparatus, device manufacturing method using the same, and stage control apparatus | |
| JP7504168B2 (en) | Exposure apparatus, exposure method, and article manufacturing method | |
| JP7216568B2 (en) | Conveying device, exposure device, and article manufacturing method | |
| CN117012689B (en) | Wafer alignment device and method | |
| TW202532978A (en) | Photolithography apparatus cordierite body | |
| JPWO2016159201A1 (en) | Exposure apparatus, flat panel display manufacturing method, device manufacturing method, and exposure method | |
| JPH1187465A (en) | Substrate delivery device, device manufacturing apparatus and device manufacturing method | |
| JP3531899B2 (en) | Projection exposure apparatus and device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |