CN112701026A - Ion implanter and ion implantation system - Google Patents
Ion implanter and ion implantation system Download PDFInfo
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- CN112701026A CN112701026A CN202011577908.0A CN202011577908A CN112701026A CN 112701026 A CN112701026 A CN 112701026A CN 202011577908 A CN202011577908 A CN 202011577908A CN 112701026 A CN112701026 A CN 112701026A
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- ion implanter
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 57
- 238000000576 coating method Methods 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000012495 reaction gas Substances 0.000 claims abstract description 47
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 238000010884 ion-beam technique Methods 0.000 claims description 39
- 238000000605 extraction Methods 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 4
- 229920001342 Bakelite® Polymers 0.000 claims description 3
- 239000004809 Teflon Substances 0.000 claims description 3
- 229920006362 Teflon® Polymers 0.000 claims description 3
- 239000004637 bakelite Substances 0.000 claims description 3
- 238000004891 communication Methods 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 description 66
- 235000012431 wafers Nutrition 0.000 description 20
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000005524 ceramic coating Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides an ion implanter and an ion implantation system.A release coating is formed on the exposed surface of one side of an insulating side wall facing a vacuum cavity, and the adhesive force between the release coating and reaction gas is smaller than that between the surface of one side of the insulating side wall facing the vacuum cavity and the reaction gas, so that the probability of the reaction gas in the vacuum cavity adhering to the surface of the release coating can be reduced, the condition of electric communication between a conductive substrate and a conductive shell caused by the adhesion of the reaction gas is reduced, and the service life and the performance of the ion implanter are improved.
Description
Technical Field
The present invention relates to the field of semiconductor device technology, and more particularly, to an ion implanter and an ion implantation system.
Background
At present, ion implanters are widely used in the production and manufacture of semiconductor devices, and can dope a small amount of impurities into a wafer, so that the structure and the conductivity of the wafer are changed, and the doped impurities are generally elements in IIIA group and VA group. The ion implanter generates plasma with a specific valence state through an ion source structure and forms an ion beam, and the ion beam finally bombards a wafer through selection and acceleration, so that the implantation of specific ions is realized. Specifically, in the ion implantation process, a wafer to be processed needs to be loaded and fixed, and is transported to an area covered by an ion beam emitted by the ion source, and the ion beam moves towards the surface of the wafer, so as to implant ions onto the surface of the wafer. After ion implantation, the wafer is transported to the outside of the area covered by the ion beam, the wafer is unloaded, and the next wafer to be processed is loaded and fixed and transported to the area covered by the ion beam. And repeating the steps to realize the ion implantation of a plurality of wafers. However, the lifetime of existing ion implanters is low.
Disclosure of Invention
In view of this, the present invention provides an ion implanter and an ion implantation system, which effectively solve the technical problems in the prior art and improve the service life and performance of the ion implanter.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
an ion implanter comprising:
the vacuum cavity is composed of a conductive substrate and a conductive shell, the conductive substrate is isolated from the conductive shell by an insulating side wall, an anti-sticking coating is formed on the exposed surface of the insulating side wall facing to one side of the vacuum cavity, and the adhesive force of the anti-sticking coating and reaction gas is smaller than that of the surface of the insulating side wall facing to one side of the vacuum cavity and the reaction gas;
an ion source disposed on the conductive substrate, the ion source for generating an ion beam within the vacuum chamber;
and the extraction electrode is electrically connected with the conductive shell and arranged on the ion beam path, the conductive substrate is connected with the anode of a power supply, and the conductive shell is connected with the cathode of the power supply.
Optionally, the anti-sticking coating is a nano ceramic coating.
Optionally, the anti-sticking coating is a teflon coating.
Optionally, one side of the insulating side wall, which faces away from the vacuum cavity, is also serrated.
Optionally, the insulating side wall is a bakelite insulating side wall.
Optionally, the conductive substrate and the conductive housing are made of metal.
Correspondingly, the invention also provides an ion implantation system which comprises the ion implanter.
Compared with the prior art, the technical scheme provided by the invention at least has the following advantages:
the invention provides an ion implanter and an ion implantation system, comprising: the vacuum cavity is composed of a conductive substrate and a conductive shell, the conductive substrate is isolated from the conductive shell by an insulating side wall, an anti-sticking coating is formed on the exposed surface of the insulating side wall facing to one side of the vacuum cavity, and the adhesive force of the anti-sticking coating and reaction gas is smaller than that of the surface of the insulating side wall facing to one side of the vacuum cavity and the reaction gas; an ion source disposed on the conductive substrate, the ion source for generating an ion beam within the vacuum chamber; and the extraction electrode is electrically connected with the conductive shell and arranged on the ion beam path, the conductive substrate is connected with the anode of a power supply, and the conductive shell is connected with the cathode of the power supply.
According to the technical scheme provided by the invention, the anti-sticking coating is formed on the exposed surface of the side, facing the vacuum cavity, of the insulating side wall, and the adhesive force between the anti-sticking coating and the reaction gas is smaller than that between the surface, facing the vacuum cavity, of the insulating side wall and the reaction gas, so that the probability that the reaction gas in the vacuum cavity is attached to the surface of the anti-sticking coating can be reduced, the condition of electric communication between the conductive substrate and the conductive shell due to the attachment of the reaction gas is reduced, and the service life and the performance of the ion implanter are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an ion implanter according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another ion implanter according to an embodiment of the invention;
fig. 3 is a schematic structural diagram of another ion implanter according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As described in the background, ion implanters are widely used in the manufacture of semiconductor devices to modify the structure and conductivity of a wafer by doping the wafer with small amounts of impurities, typically group IIIA and group VA elements. The ion implanter generates plasma with a specific valence state through an ion source structure and forms an ion beam, and the ion beam finally bombards a wafer through selection and acceleration, so that the implantation of specific ions is realized. Specifically, in the ion implantation process, a wafer to be processed needs to be loaded and fixed, and is transported to an area covered by an ion beam emitted by the ion source, and the ion beam moves towards the surface of the wafer, so as to implant ions onto the surface of the wafer. After ion implantation, the wafer is transported to the outside of the area covered by the ion beam, the wafer is unloaded, and the next wafer to be processed is loaded and fixed and transported to the area covered by the ion beam. And repeating the steps to realize the ion implantation of a plurality of wafers. However, the lifetime of existing ion implanters is low.
Accordingly, an embodiment of the present invention provides an ion implanter, including:
the vacuum cavity is composed of a conductive substrate and a conductive shell, the conductive substrate is isolated from the conductive shell by an insulating side wall, an anti-sticking coating is formed on the exposed surface of the insulating side wall facing to one side of the vacuum cavity, and the adhesive force of the anti-sticking coating and reaction gas is smaller than that of the surface of the insulating side wall facing to one side of the vacuum cavity and the reaction gas;
an ion source disposed on the conductive substrate, the ion source for generating an ion beam within the vacuum chamber;
and the extraction electrode is electrically connected with the conductive shell and arranged on the ion beam path, the conductive substrate is connected with the anode of a power supply, and the conductive shell is connected with the cathode of the power supply.
And then, form anti-sticking coating at insulating lateral wall towards vacuum cavity one side exposed surface, because anti-sticking coating and reactant gas's adhesive force are less than insulating lateral wall towards vacuum cavity one side surface and reactant gas's adhesive force, and then can reduce the probability that reactant gas adheres to anti-sticking coating surface in the vacuum cavity, reduce because reactant gas adheres to and lead to the circumstances of the electricity intercommunication between electrically conductive substrate and the electrically conductive shell, improved ion implanter's life and performance.
In order to achieve the above purpose, the technical solutions provided by the embodiments of the present invention are described in detail with reference to fig. 1 to 3.
Referring to fig. 1, a schematic structural diagram of an ion implanter according to an embodiment of the present invention is shown, wherein the ion implanter includes:
the vacuum cavity 300 is composed of a conductive substrate 100 and a conductive shell 200, the conductive substrate 100 and the conductive shell 200 are isolated by an insulating side wall 400, the insulating side wall 400 faces the exposed surface on one side of the vacuum cavity 300, an anti-sticking coating 510 is formed on the exposed surface, facing the surface on one side of the vacuum cavity, of the insulating side wall 400, and the adhesive force between the anti-sticking coating 510 and reaction gas is smaller than that between the surface on one side of the vacuum cavity and the reaction gas of the insulating side wall 400.
An ion source 600 disposed on the conductive substrate 100, wherein the ion source 600 is used for generating an ion beam in the vacuum chamber 300, and the source of the ion beam is the reactive gas.
And an extraction electrode 700 electrically connected to the conductive housing 200 and disposed on the ion beam path, wherein the conductive substrate 100 is connected to a positive electrode of a power supply 800, and the conductive housing 200 is connected to a negative electrode of the power supply 800.
The conductive substrate provided by the embodiment of the invention is connected to the anode of the power supply, and then the power supply supplies power to the ion source to generate the ion beam. The extraction electrode is connected with the conductive shell, and the conductive shell is connected with the negative electrode of the power supply, so that the extraction electrode is kept at a potential lower than that of the ion source, and positive ions can be extracted from the ion beam. After the ion beam is extracted by the extraction electrode, residual reaction gas can be diffused in the vacuum cavity, and the anti-adhesion coating provided by the embodiment of the invention has good reaction gas anti-adhesion capability, so that the probability of the reaction gas adhering to the anti-adhesion coating can be reduced, and the condition that the conductive shell and the conductive substrate are communicated due to the adhesion of the reaction gas is improved.
In an embodiment of the present invention, the conductive substrate, the conductive housing, and the extraction electrode provided in the present invention may be made of metal, and the present invention is not limited thereto.
It should be noted that the conductive housing provided in the embodiment of the present invention is further provided with an exit window, and the exit window is disposed on the path of the extraction electrode, so that the extracted ion beam can exit normally.
It can be understood that according to the technical scheme provided by the embodiment of the invention, the anti-sticking coating is formed on the exposed surface of the side, facing the vacuum cavity, of the insulating side wall, and the adhesive force between the anti-sticking coating and the reaction gas is smaller than that between the surface, facing the vacuum cavity, of the insulating side wall and the reaction gas, so that the probability that the reaction gas in the vacuum cavity is adhered to the surface of the anti-sticking coating can be reduced, the condition that the conductive substrate is electrically communicated with the conductive shell due to the adhesion of the reaction gas is reduced, and the service life and the performance of the ion implanter are improved.
In an embodiment of the present invention, the anti-sticking coating provided by the present invention is a nano ceramic coating. Alternatively, the anti-adhesion coating provided by the embodiment of the invention is a teflon coating.
It should be noted that, in the embodiment of the present invention, the material of the anti-sticking coating is not limited to the two materials, and the anti-sticking coating needs to be specifically selected according to the material of the insulating sidewall and other factors, and only needs to satisfy that the adhesion force of the anti-sticking coating to the reaction gas is smaller than the adhesion force of the insulating sidewall to the reaction gas, and the anti-sticking coating is high temperature resistant and is an insulating anti-sticking coating, so as to achieve the purpose of improving the service life and performance of the ion implanter.
Secondly, the thickness parameters of the anti-adhesion coating are not particularly limited in the embodiment of the invention, and the anti-adhesion coating needs to be specifically designed according to practical application. The embodiment of the invention can adopt a chemical vapor deposition process, a spraying process and the like to prepare the anti-sticking coating.
Referring to fig. 2, a schematic structural diagram of another ion implanter according to an embodiment of the present invention is shown, wherein the ion implanter includes:
the vacuum cavity 300 is composed of a conductive substrate 100 and a conductive shell 200, the conductive substrate 100 and the conductive shell 200 are isolated by an insulating side wall 400, the insulating side wall 400 faces the exposed surface on one side of the vacuum cavity 300, an anti-sticking coating 510 is formed on the exposed surface, facing the surface on one side of the vacuum cavity, of the insulating side wall 400, and the adhesive force between the anti-sticking coating 510 and reaction gas is smaller than that between the surface on one side of the vacuum cavity and the reaction gas of the insulating side wall 400.
An ion source 600 disposed on the conductive substrate 100, wherein the ion source 600 is used for generating an ion beam in the vacuum chamber 300.
And an extraction electrode 700 electrically connected to the conductive housing 200 and disposed on the ion beam path, wherein the conductive substrate 100 is connected to a positive electrode of a power supply 800, and the conductive housing 200 is connected to a negative electrode of the power supply 800.
Further, the insulating sidewall 400 provided by the embodiment of the present invention is indented toward the vacuum chamber 300.
The conductive substrate provided by the embodiment of the invention is connected to the anode of the power supply, and then the power supply supplies power to the ion source to generate the ion beam. The extraction electrode is connected with the conductive shell, and the conductive shell is connected with the negative electrode of the power supply, so that the extraction electrode is kept at a potential lower than that of the ion source, and positive ions can be extracted from the ion beam. After the ion beam is extracted by the extraction electrode, residual reaction gas can be diffused in the vacuum cavity, and the anti-adhesion coating provided by the embodiment of the invention has good reaction gas anti-adhesion capability, so that the probability of the reaction gas adhering to the anti-adhesion coating can be reduced, and the condition that the conductive shell and the conductive substrate are communicated due to ion adhesion is improved.
Furthermore, in the ion implanter provided by the embodiment of the invention, the shape of the side, facing the vacuum cavity, of the insulating side wall is made to be a sawtooth shape, so that the anti-sticking coating with uniform thickness is made to be a sawtooth shape, the probability that reaction gas in the vacuum cavity is attached to grooves between adjacent sawtooth structures is reduced, the probability of forming a communication passage between the conductive substrate and the conductive shell is further reduced, and the service life and the performance of the ion implanter are further improved.
Referring to fig. 3, a schematic structural diagram of another ion implanter according to an embodiment of the present invention is shown, wherein the ion implanter includes:
the vacuum cavity 300 is composed of a conductive substrate 100 and a conductive shell 200, the conductive substrate 100 and the conductive shell 200 are isolated by an insulating side wall 400, the insulating side wall 400 faces the exposed surface on one side of the vacuum cavity 300, an anti-sticking coating 510 is formed on the exposed surface, facing the surface on one side of the vacuum cavity, of the insulating side wall 400, and the adhesive force between the anti-sticking coating 510 and reaction gas is smaller than that between the surface on one side of the vacuum cavity and the reaction gas of the insulating side wall 400.
An ion source 600 disposed on the conductive substrate 100, wherein the ion source 600 is used for generating an ion beam in the vacuum chamber 300.
And an extraction electrode 700 electrically connected to the conductive housing 200 and disposed on the ion beam path, wherein the conductive substrate 100 is connected to a positive electrode of a power supply 800, and the conductive housing 200 is connected to a negative electrode of the power supply 800.
Further, the insulating sidewall 400 provided by the embodiment of the present invention is indented toward the vacuum chamber 300. In addition, the side of the insulating sidewall 400 away from the vacuum chamber 300 is also serrated.
The conductive substrate provided by the embodiment of the invention is connected to the anode of the power supply, and then the power supply supplies power to the ion source to generate the ion beam. The extraction electrode is connected with the conductive shell, and the conductive shell is connected with the negative electrode of the power supply, so that the extraction electrode is kept at a potential lower than that of the ion source, and positive ions can be extracted from the ion beam. After the ion beam is extracted by the extraction electrode, residual reaction gas can be diffused in the vacuum cavity, and the anti-adhesion coating provided by the embodiment of the invention has good reaction gas anti-adhesion capability, so that the probability of the reaction gas adhering to the anti-adhesion coating can be reduced, and the condition that the conductive shell and the conductive substrate are communicated due to the adhesion of the reaction gas is improved.
Furthermore, in the ion implanter provided by the embodiment of the invention, the insulating side wall is made into a sawtooth shape towards the vacuum cavity and away from one side of the vacuum cavity, so that the anti-sticking coating with uniform thickness is made into a sawtooth shape, the probability that reaction gas in the vacuum cavity is attached to grooves between adjacent sawtooth structures is reduced, the probability of forming a communication passage between the conductive substrate and the conductive shell is further reduced, and the service life and the performance of the ion implanter are further improved.
In one embodiment of the present invention, the insulating sidewall provided by the present invention is a bakelite insulating sidewall, and the present invention is not particularly limited thereto.
The conductive substrate and the conductive housing provided in the embodiments of the present invention are made of metal, and the present invention is not particularly limited thereto.
Correspondingly, the embodiment of the invention also provides an ion implantation system, which comprises the ion implanter provided by any one of the above embodiments.
An embodiment of the present invention provides an ion implanter and an ion implantation system, including: the vacuum cavity is composed of a conductive substrate and a conductive shell, the conductive substrate is isolated from the conductive shell by an insulating side wall, an anti-sticking coating is formed on the exposed surface of the insulating side wall facing to one side of the vacuum cavity, and the adhesive force of the anti-sticking coating and reaction gas is smaller than that of the surface of the insulating side wall facing to one side of the vacuum cavity and the reaction gas; an ion source disposed on the conductive substrate, the ion source for generating an ion beam within the vacuum chamber; and the extraction electrode is electrically connected with the conductive shell and arranged on the ion beam path, the conductive substrate is connected with the anode of a power supply, and the conductive shell is connected with the cathode of the power supply.
According to the technical scheme provided by the embodiment of the invention, the anti-sticking coating is formed on the exposed surface of the side, facing the vacuum cavity, of the insulating side wall, and the adhesive force between the anti-sticking coating and the reaction gas is smaller than that between the surface, facing the vacuum cavity, of the insulating side wall and the reaction gas, so that the probability that the reaction gas in the vacuum cavity is attached to the surface of the anti-sticking coating can be reduced, the condition that the conductive substrate is electrically communicated with the conductive shell due to the attachment of the reaction gas is reduced, and the service life and the performance of the ion implanter are improved.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. An ion implanter, comprising:
the vacuum cavity is composed of a conductive substrate and a conductive shell, the conductive substrate is isolated from the conductive shell by an insulating side wall, an anti-sticking coating is formed on the exposed surface of the insulating side wall facing to one side of the vacuum cavity, and the adhesive force of the anti-sticking coating and reaction gas is smaller than that of the surface of the insulating side wall facing to one side of the vacuum cavity and the reaction gas;
an ion source disposed on the conductive substrate, the ion source for generating an ion beam within the vacuum chamber;
and the extraction electrode is electrically connected with the conductive shell and arranged on the ion beam path, the conductive substrate is connected with the anode of a power supply, and the conductive shell is connected with the cathode of the power supply.
2. The ion implanter according to claim 1 or wherein the anti-sticking coating is a nanoceramic coating.
3. The ion implanter according to claim 1, wherein said anti-stick coating is a teflon coating.
4. The ion implanter according to claim 1, wherein the insulating sidewall is serrated on a side facing the vacuum chamber.
5. The ion implanter according to claim 1, wherein the side of said insulative sidewall facing away from said vacuum chamber is further indented.
6. The ion implanter according to claim 1, wherein said insulative sidewall is a bakelite insulative sidewall.
7. The ion implanter according to claim 1, wherein said conductive base and said conductive housing are both metal.
8. An ion implantation system comprising an ion implanter according to any of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011577908.0A CN112701026A (en) | 2020-12-28 | 2020-12-28 | Ion implanter and ion implantation system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011577908.0A CN112701026A (en) | 2020-12-28 | 2020-12-28 | Ion implanter and ion implantation system |
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| CN112701026A true CN112701026A (en) | 2021-04-23 |
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| CN202011577908.0A Pending CN112701026A (en) | 2020-12-28 | 2020-12-28 | Ion implanter and ion implantation system |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020158213A1 (en) * | 2001-03-19 | 2002-10-31 | Yasuhiko Matsunaga | Ion implantation apparatus and insulating bushing therefor |
| CN101071752A (en) * | 2006-05-10 | 2007-11-14 | 台湾积体电路制造股份有限公司 | High current ion implantation system and improved device and insulator therein |
| CN101802980A (en) * | 2007-09-27 | 2010-08-11 | 瓦里安半导体设备公司 | Single wafer implanter for silicon-on-insulator wafer fabrication |
| CN105702572A (en) * | 2014-12-11 | 2016-06-22 | 东京毅力科创株式会社 | Plasma etching method |
| CN110957202A (en) * | 2018-09-26 | 2020-04-03 | 台湾积体电路制造股份有限公司 | Ion implantation system and its bushing |
| CN111584334A (en) * | 2020-04-09 | 2020-08-25 | 中国科学院微电子研究所 | Insulation structure for ion implantation device |
-
2020
- 2020-12-28 CN CN202011577908.0A patent/CN112701026A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020158213A1 (en) * | 2001-03-19 | 2002-10-31 | Yasuhiko Matsunaga | Ion implantation apparatus and insulating bushing therefor |
| CN101071752A (en) * | 2006-05-10 | 2007-11-14 | 台湾积体电路制造股份有限公司 | High current ion implantation system and improved device and insulator therein |
| CN101802980A (en) * | 2007-09-27 | 2010-08-11 | 瓦里安半导体设备公司 | Single wafer implanter for silicon-on-insulator wafer fabrication |
| CN105702572A (en) * | 2014-12-11 | 2016-06-22 | 东京毅力科创株式会社 | Plasma etching method |
| CN110957202A (en) * | 2018-09-26 | 2020-04-03 | 台湾积体电路制造股份有限公司 | Ion implantation system and its bushing |
| CN111584334A (en) * | 2020-04-09 | 2020-08-25 | 中国科学院微电子研究所 | Insulation structure for ion implantation device |
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Application publication date: 20210423 |