CN112103201B - Transparent wafer surface curvature radius measuring method capable of automatically calibrating and compensating - Google Patents
Transparent wafer surface curvature radius measuring method capable of automatically calibrating and compensating Download PDFInfo
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Abstract
本发明公开了一种自动校准补偿的透明晶圆表面曲率半径测量方法，涉及半导体技术领域，该方法包括：建立各波长与距离值的对应关系；确定晶圆检测范围；移动共焦测距传感器至透明晶圆的检测位置，移动透明晶圆至晶圆检测范围中心位置；判断检测位置是否在晶圆检测范围内：若否则记录轴向调整高度值；若是则选择反射光小孔透过率最大波长作为检测位置的焦点波长，得到其对应的距离值；计算补偿得到高度变化值；移动共焦测距传感器至下一检测位置，重新执行判断步骤直至所有检测位置全部检测完毕；对所有高度变化值进行拟合得到透明晶圆一直径方向的表面曲率半径。该方法适用于透明晶圆的测量，且自动校准补偿测量值以获取高精度的表面曲率半径。
The invention discloses an automatic calibration compensation method for measuring the curvature radius of a transparent wafer surface, which relates to the technical field of semiconductors. The method includes: establishing a corresponding relationship between each wavelength and a distance value; determining a wafer detection range; moving a confocal distance measuring sensor To the detection position of the transparent wafer, move the transparent wafer to the center of the wafer detection range; determine whether the detection position is within the wafer detection range: if not, record the axial adjustment height value; if so, select the reflected light aperture transmittance The maximum wavelength is used as the focus wavelength of the detection position, and the corresponding distance value is obtained; the height change value is obtained by calculation and compensation; The change value is fitted to obtain the surface curvature radius of a diameter direction of the transparent wafer. This method is suitable for the measurement of transparent wafers, and the automatic calibration compensates the measurement value to obtain a high-precision surface curvature radius.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for measuring the curvature radius of the surface of a transparent wafer by automatic calibration and compensation.
Background
In the semiconductor wafer preparation process, films are required to be formed on the surfaces of substrates, due to different thermal expansion coefficients of different materials, the substrates are warped and deformed in the film coating process, the film performance and the photoetching precision are seriously affected by overhigh stress, even the wafers are broken in the transmission process, equipment pollution and damage are caused, and the economic loss of manufacturers is huge. The film coating stress measurement is beneficial to timely adjusting the film coating process, and the bad pieces are removed, so that the manufacturing efficiency is improved.
The traditional film stress measuring equipment firstly measures the curvature radius of the surface of a wafer before and after film coating, and then calculates the film coating stress by manually inputting the data of film thickness, substrate thickness and the like. The curvature radius of the surface of the wafer is generally measured by a laser triangulation method, namely, laser is irradiated on the surface of the wafer at a certain angle, the position of reflected light is detected on the reflected light side through a position sensor such as a CCD (charge coupled device), the measurement of the height of a single point on the surface of the wafer is realized, then, multi-point measurement is carried out through synchronously moving light path components such as a light source, a reflector and the position sensor, a height curve on one diameter of the surface is fitted, the curvature radius is calculated according to the height curve, and the measurement precision of the height of the surface of the. In order to improve the measurement accuracy, the method usually needs a longer optical path, so that the optical path is large in size and influenced by the reflection angle, and the influence caused by vibration when the sensor is moved can be amplified.
The silicon-based semiconductor has the characteristics of high temperature resistance, good radiation resistance, convenience in manufacturing, good stability, high reliability and the like, so that most integrated circuits are manufactured by taking silicon as a material, but the silicon-based semiconductor is not suitable for being used in the fields of high frequency and high power. The compound semiconductor has more excellent performance and energy band structure, and is gradually becoming an indispensable material in the fields of radio frequency, photoelectricity, power and the like. Different compound materials have different transmittances, and when the compound wafer is detected, the light transmittance of the material is low, so that the light intensity received by the position sensor is too low due to the influence of the transmittance of the wafer on a laser triangulation method, and the position sensor cannot be applied to measurement of the transparent wafer.
The spectrum confocal ranging technology utilizes a diffraction lens to focus light with different wavelengths on different optical axis positions, so that the corresponding relation between the wavelength focal point and the distance is formed, the surface distance of the transparent wafer can be measured by adopting the spectrum confocal ranging technology, the surface appearance change data of the wafer can be acquired, and the surface curvature radius is calculated. Compared with a laser triangulation method, the method has the characteristics of coaxial emitted light and emitted light, cone ray focusing, focus distance measurement and the like, is not influenced by the shadow of the height change of the measured object, supports a larger inclination angle, and can better support the measurement of the mirror surface and the transparent object.
The reflection and absorption characteristics of different material surfaces to various wavelengths are different, so that the conventional spectral confocal ranging sensor needs a manufacturer to calibrate the data of the axial distance and the focusing wavelength according to a sample to be measured provided by a customer before being used. However, stress calculation needs to be carried out before and after film coating, the measured material is inevitably changed, different materials have different spectral reflectivities, only one-time data calibration is carried out on a certain material, and a large error is generated during material replacement.
Therefore, in order to solve the above problems, it is necessary to provide a method for measuring and compensating the surface curvature radius of a transparent wafer, so as to realize stable height curve measurement when the material of the surface of the transparent wafer is greatly changed, so as to support the film stress measurement of the transparent wafer by a stress measurement instrument.
Disclosure of Invention
The present invention provides a method for measuring the surface curvature radius of a transparent wafer with automatic calibration and compensation, which is suitable for measuring the transparent wafer and automatically calibrates and compensates the measured value to obtain the surface curvature radius with high precision, aiming at the problems and technical requirements, and the technical scheme of the invention is as follows:
a method for measuring the curvature radius of the surface of a transparent wafer with automatic calibration and compensation is realized based on a film stress measuring instrument, wherein the film stress measuring instrument comprises a confocal distance measuring sensor and a sensor controller connected with the confocal distance measuring sensor, a sensor moving platform for bearing the horizontal movement of the confocal distance measuring sensor, a wafer moving platform for bearing the axial movement of the transparent wafer along the confocal distance measuring sensor, a displacement sensor for acquiring the axial adjustment height value of the wafer moving platform, a vibration sensor arranged on the sensor moving platform and a fixed diffuse reflection plate with the fixed height from the sensor moving platform, the sensor controller comprises a light source and a spectrometer, the light source is used for providing a multi-wavelength light source, and the spectrometer performs spectral analysis on the maximum reflection light intensity of each wavelength acquired by the confocal distance measuring sensor to obtain the distance value from the surface position of the transparent wafer corresponding to; the vibration sensor collects vibration measurement values of the confocal distance measuring sensor during horizontal movement;
the measuring method comprises the following steps:
axially moving the transparent wafer in the measuring range of the confocal distance measuring sensor, reading the maximum reflected light intensity signal of each wavelength on the surface of the transparent wafer and the corresponding half-peak width thereof through a spectrometer, and establishing the corresponding relation between each wavelength and the distance value;
determining the wafer detection range according to the maximum reflected light intensity signal and the corresponding half-peak width thereof;
horizontally moving the confocal distance measuring sensor to the edge position of one diameter direction of the transparent wafer and using the edge position as a detection position, and axially moving the transparent wafer to the central position of the detection range of the wafer and using the central position as an original position for height measurement;
judging whether the detection position is in the wafer detection range:
if the detection position exceeds the wafer detection range, the transparent wafer is axially moved until the detection position is located at the central position of the wafer detection range, and the axial adjustment height value is recorded; when the axial adjustment height value is regulated to move to the upper part of the original position, the axial adjustment height value is positive, otherwise, the axial adjustment height value is negative;
if the detection position is located in the detection range of the wafer, reading the actually measured reflected light intensity signal of each wavelength at the detection position, and calculating the small hole transmittance of the reflected light of each wavelength according to the maximum reflected light intensity signal and the actually measured reflected light intensity signal
Wherein, IkλIs a measured reflected light intensity signal of wavelength lambda, ImaxλIs the maximum reflected light intensity signal at wavelength λ;
selecting the wavelength with the maximum transmission rate of the reflected light micropore as the focal wavelength of the detection position, and obtaining a distance value corresponding to the focal wavelength according to the corresponding relation;
calculating and compensating according to the distance value corresponding to the focal wavelength, the axial adjustment height value and the vibration measurement value to obtain a height change value of the detection position;
horizontally moving the confocal ranging sensor to the next detection position of the transparent wafer in the diameter direction, and judging whether the detection position is in the detection range of the wafer again until all the detection positions in the diameter direction are completely detected;
and fitting all the height change values to obtain a height change curve of the surface of the transparent wafer, and fitting the height change curve to obtain the surface curvature radius of the transparent wafer in one diameter direction.
The further technical scheme is that the wafer detection range is determined according to the maximum reflected light intensity signal and the corresponding half-peak width thereof, and the method comprises the following steps:
selecting from the measurement range of a confocal distance measuring sensor that continuously satisfies
The widest detection ofThe segment is used as the wafer inspection range, wherein WλIs ImaxλCorresponding to the half-peak width, δ is an empirical value.
The further technical scheme is that the height change value of the detection position is obtained by calculating and compensating according to the distance value corresponding to the focal wavelength, the axial adjustment height value and the vibration measurement value, and the method comprises the following steps:
calculating the height distance D of the detection position according to the distance value corresponding to the focal wavelength and the axial adjustment height valuek＝dk+skWherein d iskDistance value, s, corresponding to focal wavelengthkAdjusting the height value for the axial direction;
using the vibration measurement value to perform vibration compensation on the height distance of the detection position to obtain Dk1＝dk+sk+ΔekWherein, Δ ekTo detect the amount of vibration of the position and Δ ek＝Yk-ek，YkFor moving the reference data, ekIs a vibration measurement value;
obtaining a height variation value of hk＝Dmax-Dk1Wherein D ismaxThe maximum value of all height distances after compensation;
the method for acquiring the moving reference data comprises the following steps: and performing straight line fitting on all the vibration measurement values, and taking the fitted straight line data as the movement reference data of the vibration sensor.
The technical scheme is that at least three bearing point bulges are uniformly and symmetrically distributed on a bearing bracket of the wafer moving platform and used for supporting the transparent wafer;
axially moving a transparent wafer within a measurement range of a confocal ranging sensor, comprising:
and placing the transparent wafer on the bearing bracket, wherein the transparent wafer moves gently in the axial direction from the far sensor to the direction of the proximity sensor, or the transparent wafer moves gently in the axial direction from the direction of the proximity sensor to the far sensor until the transparent wafer moves out of the measuring range of the confocal ranging sensor, and the maximum reflected light intensity signal of each wavelength in the range and the corresponding half-peak width data of the maximum reflected light intensity signal are acquired.
The further technical scheme is that an adsorption and rotation structure is arranged on the wafer moving platform, after the surface curvature radius of the transparent wafer in one diameter direction is obtained, the transparent wafer is rotated to complete the measurement of the surface curvature radii of the transparent wafer in multiple diameter directions, and the average surface curvature radius of the transparent wafer is obtained through averaging.
The beneficial technical effects of the invention are as follows:
the confocal ranging technology is applied to the film stress measuring instrument of the transparent wafer, and the problem that the instrument cannot measure the transparent wafer is solved; by selecting the wafer detection range, the problem that the error is increased due to the fact that a detected material absorbs a specific wavelength and the half-peak width is large is solved, and the method for selecting the wafer detection range does not depend on the precision of an actuating mechanism, so that the structure cost is reduced; the measuring method is adaptive to the surface material change of the transparent wafer, the measurement of each wafer automatically selects the wafer detection range without data calibration in advance by a supplier, the problem of measurement error caused by the repeated change of the surface material of the wafer is solved, and the measurement precision and the applicability are improved; the influence of the horizontal movement of the confocal ranging sensor on the measurement result is reduced by a vibration compensation method; compared with the traditional laser triangulation method, in the measurement range of the confocal method, light with corresponding wavelength is always focused, the precision is not influenced by distance, the measurement blind area is small, and larger inclination and warping angles are supported.
Drawings
Fig. 1 is a schematic structural diagram of a thin film stress measuring instrument provided in the present application.
Fig. 2 is a flowchart of a measurement method provided in the present application.
Fig. 3(a) is a graph of movement reference data of the vibration sensor provided in the present application.
Fig. 3(b) is a graph of the height distance after compensation as provided by the present application.
Fig. 3(c) is a graph of the variation of the surface height of the transparent wafer provided by the present application.
Detailed Description
The following further describes the embodiments of the present invention with reference to the drawings.
The application discloses a method for measuring the curvature radius of the surface of a transparent wafer with automatic calibration and compensation, which is realized based on a film stress measuring instrument, and the structural schematic diagram of the method is shown in figure 1, the film stress measuring instrument comprises a confocal distance measuring sensor 1 and a sensor controller (not shown in the figure) connected with the confocal distance measuring sensor 1, a sensor moving platform 2 for bearing the horizontal movement of the confocal distance measuring sensor 1, a wafer moving platform 3 for bearing the axial movement of a transparent wafer 7 along the confocal distance measuring sensor 1, a displacement sensor 4 for acquiring the axial adjustment height value of the wafer moving platform 3, a vibration sensor 5 arranged on the sensor moving platform 2 and a fixed diffuse reflection plate 6 with the fixed height of the distance sensor moving platform 2. The confocal ranging sensor 1 is realized based on the model CL-P007 of Keynes, and a sensor head is only an optical lens, has no heating device and does not generate temperature drift. The displacement sensor 4 is implemented on the basis of the model number LS-7010 of keyence. The sensor controller comprises a light source and a spectrometer, wherein the light source is used for providing a multi-wavelength light source, and the spectrometer performs spectrum analysis on the maximum reflection light intensity of each wavelength acquired by the confocal ranging sensor 1 to obtain the distance value from the surface position of the transparent wafer corresponding to each wavelength to the measuring head of the sensor; the vibration sensor 5 is realized based on a model number LK-H052 of Keynes and is used for collecting vibration measurement values when the confocal ranging sensor 1 moves horizontally.
The flow chart of the measuring method is shown in fig. 2, and comprises the following steps:
step 1: and axially moving the transparent wafer 7 in the measuring range of the confocal ranging sensor 1, reading the maximum reflected light intensity signal of each wavelength on the surface of the transparent wafer and the corresponding half-peak width thereof through a spectrometer, and establishing the corresponding relation between each wavelength and the distance value.
The utility model provides a wafer mobile station 3's bearing bracket goes up three at least bearing points of even symmetric distribution arch for support transparent wafer, avoid transparent wafer to use fixed forms such as clamping, vacuum, prevent to produce stress variation.
The specific axial moving method comprises the following steps:
the transparent wafer 7 is placed on the bearing bracket, the surface material of the transparent wafer 7 is alpha, the transparent wafer 7 moves gently in the axial direction from the direction far away from the sensor to the direction close to the sensor, or the transparent wafer 7 moves gently in the axial direction from the direction close to the sensor to the direction far away from the sensor until the transparent wafer moves beyond the measuring range of the confocal ranging sensor 1, and at the moment, the maximum reflected light intensity signal of each wavelength in the range and the corresponding half-peak width data of the maximum reflected light intensity signal are acquired.
Step 2: and determining the wafer detection range according to the maximum reflected light intensity signal and the corresponding half-peak width thereof.
Selecting the measurement range of the confocal distance measuring sensor 1 to continuously satisfy
The widest detection section of the wafer is used as a wafer detection range, wherein ImaxλIs the maximum reflected light intensity signal of wavelength lambda, WλIs ImaxλCorresponding to the half-peak width, δ is an empirical value.
And step 3: the confocal distance measuring sensor 1 is horizontally moved to the edge position of one diameter direction of the transparent wafer and used as a detection position k, and the transparent wafer is axially moved to the central position of the wafer detection range and used as an original position of height measurement.
And 4, step 4: judging whether the detection position k is in the wafer detection range:
if the detection position k exceeds the wafer detection range, the transparent wafer is axially moved until the detection position is positioned at the central position of the wafer detection range, and the axial adjustment height value s is recordedk. When the axial adjustment height value is regulated to move to the upper part of the original position, the axial adjustment height value is positive, otherwise, the axial adjustment height value is negative.
The step of reading the measured reflected light intensity signal at the detection position for each wavelength is performed.
If the detection position k is located in the detection range of the wafer, reading the actually measured reflected light intensity signal of each wavelength at the detection position, and calculating the small hole transmittance of the reflected light of each wavelength according to the maximum reflected light intensity signal and the actually measured reflected light intensity signal
Wherein, IkλIs the measured reflected light intensity signal of wavelength lambda.
And 5: selectively reflecting lightSmall pore transmittance etakλThe maximum wavelength is used as the focal wavelength of the detection position, and the distance value d corresponding to the focal wavelength is obtained according to the corresponding relationk。
Step 6: distance value d corresponding to focal wavelengthkAxial adjustment of height skAnd a vibration measurement ekAnd calculating compensation to obtain a height change value of the detection position k.
Step 61: distance value d corresponding to focal wavelengthkAnd axial adjustment of height skCalculating to obtain the height distance D of the detection position kk＝dk+skWherein d iskDistance value, s, corresponding to focal wavelengthkThe height value is adjusted axially.
Step 62: using vibration measurements ekHeight distance D to detection position kkPerforming vibration compensation to obtain Dk1＝dk+sk+ΔekThe fitting graph is shown in FIG. 3(b), in which Δ ekTo detect the amount of vibration at position k and Δ ek＝Yk-ek，YkFor moving the reference data, ekIs a vibration measurement.
The method for acquiring the moving reference data comprises the following steps: for all vibration measurements ekThe fitting curve is shown in fig. 3(a) by performing a straight line fitting by the least square method, and the fitted straight line data is used as the movement reference data of the vibration sensor 5.
And step 63: obtaining a height variation value of hk＝Dmax-Dk1Wherein D ismaxThe maximum value of all height distances after compensation.
And 7: and horizontally moving the confocal ranging sensor 1 to the next detection position of the transparent wafer in the diameter direction, and judging whether the detection position is in the detection range of the wafer again (namely, entering the step 4) until all the detection positions in the diameter direction are completely detected.
And 8: for all height variation values hkFitting to obtain a curve of the surface height change of the transparent wafer, wherein the curve of the fitted curve is shown in FIG. 3(c), and fitting itThe surface curvature radius of the transparent wafer in one diameter direction is obtained. Optionally, the height variation curve of the surface of the transparent wafer is fitted into a circle by a least square method fitting circle or an algebraic approximation method, and the curvature radius of the circle is solved.
The wafer moving table 3 of the present application is provided with an adsorption and rotation structure, and after obtaining the surface curvature radius of one diameter direction of the transparent wafer, the measurement method is optional and further includes:
and step 9: after the transparent wafer is rotated, the step of axially moving the transparent wafer 7 within the measurement range of the confocal ranging sensor 1 is performed again (i.e. from step 1), so as to complete the measurement of the surface curvature radius of the transparent wafer in multiple diameter directions, and the average surface curvature radius of the transparent wafer is obtained by averaging.
According to the method, the problem that the error is increased due to the fact that a detected material absorbs a specific wavelength and the half-peak width is large is solved by selecting the wafer detection range, the method for selecting the wafer detection range does not depend on the precision of an actuating mechanism, and the structure cost is reduced; the measuring method is adaptive to the surface material change of the transparent wafer, the measurement of each wafer automatically selects the wafer detection range without data calibration in advance by a supplier, the problem of measurement error caused by the repeated change of the surface material of the wafer is solved, and the measurement precision and the applicability are improved; the influence of the horizontal movement of the confocal ranging sensor on the measurement result is reduced by a vibration compensation method, and automatic compensation is realized; compared with the traditional laser triangulation method, in the measurement range of the confocal method, light with corresponding wavelength is always focused, the precision is not influenced by distance, the measurement blind area is small, and larger inclination and warping angles are supported.
What has been described above is only a preferred embodiment of the present application, and the present invention is not limited to the above embodiment. It is to be understood that other modifications and variations directly derivable or suggested by those skilled in the art without departing from the spirit and concept of the present invention are to be considered as included within the scope of the present invention.
Claims (5)
1. A method for measuring the curvature radius of the surface of a transparent wafer with automatic calibration and compensation is characterized in that the measuring method is realized based on a thin film stress measuring instrument, the thin film stress measuring instrument comprises a confocal distance measuring sensor and a sensor controller connected with the confocal distance measuring sensor, a sensor moving platform for bearing the horizontal movement of the confocal distance measuring sensor, a wafer moving platform for bearing the axial movement of the transparent wafer along the confocal distance measuring sensor, a displacement sensor for acquiring the axial adjustment height value of the wafer moving platform, a vibration sensor arranged on the sensor moving platform and a fixed diffuse reflection plate with a fixed height from the sensor moving platform, the sensor controller comprises a light source and a spectrometer, the light source is used for providing a multi-wavelength light source, and the spectrometer performs spectral analysis on the maximum reflection light intensity of each wavelength acquired by the confocal distance measuring sensor, obtaining the distance value from the surface position of the transparent wafer corresponding to each wavelength to a measuring head of the sensor; the vibration sensor collects vibration measurement values of the confocal distance measuring sensor during horizontal movement;
the measuring method comprises the following steps:
axially moving the transparent wafer in the measuring range of the confocal distance measuring sensor, reading the maximum reflected light intensity signal of each wavelength on the surface of the transparent wafer and the corresponding half-peak width thereof through the spectrometer, and establishing the corresponding relation between each wavelength and the distance value;
determining the wafer detection range according to the maximum reflected light intensity signal and the corresponding half-peak width thereof;
horizontally moving the confocal ranging sensor to the edge position of one diameter direction of the transparent wafer to be used as a detection position, and axially moving the transparent wafer to the center position of the detection range of the wafer to be used as an original position for height measurement;
judging whether the detection position is within the wafer detection range:
if the detection position exceeds the wafer detection range, the transparent wafer is axially moved until the detection position is located at the center of the wafer detection range, and an axial adjustment height value is recorded; when the axial adjustment height value is regulated to move above the original point position, the axial adjustment height value is positive, otherwise, the axial adjustment height value is negative;
if the detection position is located in theIn the detection range of the wafer, reading the actually measured reflected light intensity signal of each wavelength at the detection position, and calculating the small hole transmittance of the reflected light of each wavelength according to the maximum reflected light intensity signal and the actually measured reflected light intensity signal
Wherein, IkλIs a measured reflected light intensity signal of wavelength lambda, ImaxλIs the maximum reflected light intensity signal at wavelength λ;
selecting the wavelength with the maximum transmittance of the reflected light pore as the focal wavelength of the detection position, and obtaining a distance value corresponding to the focal wavelength according to the corresponding relation;
calculating and compensating according to the distance value corresponding to the focal wavelength, the axial adjustment height value and the vibration measurement value to obtain a height change value of the detection position;
horizontally moving the confocal ranging sensor to a next detection position of the transparent wafer in the diameter direction, and re-judging whether the detection position is in the detection range of the wafer until all detection positions in the diameter direction are completely detected;
and fitting all the height change values to obtain a height change curve of the surface of the transparent wafer, and fitting the height change curve to obtain the surface curvature radius of the transparent wafer in one diameter direction.
2. The method as claimed in claim 1, wherein the determining the wafer inspection range according to the maximum reflected light intensity signal and the corresponding half-peak width thereof comprises:
selecting from the measurement range of the confocal ranging sensor that continuously satisfies
The widest detection section of (1) is used as the wafer detection range, wherein WλIs ImaxλCorresponding to the half-peak width, δ is an empirical value.
3. The method as claimed in claim 1, wherein the calculating and compensating the height variation value of the detected position according to the distance value corresponding to the focal wavelength, the axial adjustment height value and the vibration measurement value comprises:
calculating the height distance D of the detection position according to the distance value corresponding to the focal wavelength and the axial adjustment height valuek＝dk+skWherein d iskA distance value, s, corresponding to the focal wavelengthkAdjusting a height value for the axial direction;
using the vibration measurement value to perform vibration compensation on the height distance of the detection position to obtain Dk1＝dk+sk+ΔekWherein, Δ ekIs the amount of vibration of the detection position and Δ ek＝Yk-ek，YkFor moving the reference data, ekIs the vibration measurement;
obtaining a height variation value of hk＝Dmax-Dk1Wherein D ismaxThe maximum value of all the height distances after compensation;
the method for acquiring the moving reference data comprises the following steps: and performing straight line fitting on all the vibration measurement values, and taking the fitted straight line data as the movement reference data of the vibration sensor.
4. The method as claimed in claim 1, wherein at least three protrusions are symmetrically distributed on the supporting bracket of the wafer moving stage for supporting the transparent wafer;
the axially moving the transparent wafer within the measurement range of the confocal ranging sensor includes:
and placing the transparent wafer on the bearing bracket, wherein the transparent wafer moves gently in the axial direction from the direction far away from the sensor to the direction close to the sensor, or the transparent wafer moves gently in the axial direction from the direction close to the sensor to the direction far away from the sensor until the transparent wafer moves beyond the measurement range of the confocal ranging sensor, and at the moment, the maximum reflected light intensity signal of each wavelength in the range and the corresponding half-peak width data thereof are acquired.
5. The method as claimed in claim 1, wherein an absorption and rotation structure is disposed on the wafer stage, and after obtaining the surface curvature radius of the transparent wafer in one diameter direction, the transparent wafer is rotated to complete the surface curvature radius measurement of the transparent wafer in multiple diameter directions, and the average surface curvature radius of the transparent wafer is obtained by averaging.
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| CN116202664B (en) * | 2023-03-10 | 2023-11-10 | 无锡卓海科技股份有限公司 | Wafer film stress detection system and method |
| CN118168464B (en) * | 2024-05-14 | 2024-07-09 | 北京特思迪半导体设备有限公司 | Method and equipment for measuring thickness and thinning thickness of flat piece in liquid environment |
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