CN111682400B - Method for manufacturing contact layer, semiconductor laser and manufacturing method thereof - Google Patents
Method for manufacturing contact layer, semiconductor laser and manufacturing method thereof Download PDFInfo
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- CN111682400B CN111682400B CN202010574296.3A CN202010574296A CN111682400B CN 111682400 B CN111682400 B CN 111682400B CN 202010574296 A CN202010574296 A CN 202010574296A CN 111682400 B CN111682400 B CN 111682400B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 148
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 55
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- 239000011701 zinc Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 7
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- 238000005530 etching Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 238000003776 cleavage reaction Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
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- 238000009826 distribution Methods 0.000 abstract description 16
- 239000000969 carrier Substances 0.000 abstract description 13
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 35
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 32
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
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- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a manufacturing method of a contact layer, a semiconductor laser and a manufacturing method of the semiconductor laser. The contact layer manufactured by the manufacturing method comprises a doped region and a non-doped region, current cannot be injected into the non-doped region, only the doped region can inject current, and the area of the current which can be injected into the doped region is gradually increased along the cavity length direction, so that the influence of the uneven distribution of the carrier density and the gain along the direction from the reflection increasing film to the reflection reducing film caused by the uneven distribution of the photon density in the resonant cavity is counteracted, the carriers are uniformly distributed in the cavity length direction, and the output power and the performance stability of the semiconductor laser are improved. The electrode of the semiconductor laser is directly manufactured on the contact layer, a dielectric film does not exist between the electrode and the contact layer, and the electrode and the contact layer are firmly adhered and are not easy to fall off.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a manufacturing method of a contact layer, a semiconductor laser and a manufacturing method thereof.
Background
Semiconductor lasers are important optoelectronic devices that can convert injected carriers into photons by radiative recombination. The conventional semiconductor laser adopts a mode of uniformly injecting carriers, namely, the carriers are uniformly distributed along the whole electrode direction. Semiconductor lasers often use asymmetric film plating, i.e., one end of the cavity surface is evaporated with an anti-reflection film for reflecting light, and the other end of the cavity surface is evaporated with an anti-reflection film for transmitting light. When the semiconductor laser is in a lasing state, the distribution of the optical field in the cavity is affected by the asymmetric coating, i.e., the photon density in the resonant cavity of the semiconductor laser gradually increases along the direction from the reflection increasing film to the reflection reducing film (i.e., along the cavity length direction). Due to the influence of the stimulated emission effect, the higher the photon density is, the higher the carrier consumption speed is, so that the actual carrier density and gain are unevenly distributed along the direction from the reflection increasing film to the reflection reducing film, the performance of the semiconductor laser is degraded, and the light output power is reduced.
In the prior art, a dielectric film is prepared on a ridge structure of a wafer, the dielectric film is etched to form the dielectric film which is non-uniformly distributed along the cavity length direction, then electrodes are prepared on the non-uniformly distributed dielectric film, the wafer is cleaved, and a reflection reducing film and a reflection increasing film are prepared to obtain the semiconductor laser, so that the non-uniform injection of carriers along the cavity length direction is realized, and the non-uniform distribution of the carriers caused by the fact that the consumption of the carriers is fast along the cavity length direction is counteracted.
The semiconductor laser has a layer of dielectric film between the electrode and the wafer, so that the adhesion between the electrode and the wafer is poor, and the electrode is easy to fall off.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects that a dielectric film is arranged between an electrode and a wafer in the semiconductor laser in the prior art for realizing the non-uniform injection of current carriers, so that the adhesion between the electrode and the wafer is poor, and the electrode is easy to fall off.
To this end, the invention provides a method for manufacturing a contact layer of a semiconductor laser, comprising the following steps:
forming a non-doped semiconductor layer on an epitaxial layer of the semiconductor laser;
and doping the non-doped semiconductor layer to form a contact layer with a doped region capable of injecting current, wherein the area of the current capable of being injected in the doped region is gradually increased along the cavity length direction, and one electrode of the semiconductor laser is formed on the surface of the contact layer.
Optionally, in the above method for manufacturing a contact layer for a semiconductor laser, doping the undoped semiconductor layer includes:
depositing a dielectric layer on the undoped semiconductor layer;
etching the dielectric layer based on the doped region to obtain a patterned dielectric mask, wherein the area of the dielectric mask in the doped region is gradually reduced along the cavity length direction;
doping the non-doped semiconductor layer attached with the dielectric mask so that the contact layer can inject current in the doped region;
and removing the dielectric mask on the contact layer.
Optionally, in the above method for manufacturing a contact layer for a semiconductor laser, the dielectric mask includes a ring-shaped mask surrounding the doped region for defining a region for current injection.
Optionally, in the above method for manufacturing a contact layer for a semiconductor laser, the dielectric mask further includes a plurality of dielectric mask blocks distributed in the doped region, and the arrangement density of the plurality of dielectric mask blocks along the cavity length direction is gradually reduced.
Optionally, the above method for manufacturing a contact layer for a semiconductor laser, doping a non-doped semiconductor layer to which the dielectric mask is attached, includes:
and carrying out doping treatment on the non-doped semiconductor layer in a high-temperature diffusion mode.
Optionally, in the above method for manufacturing a contact layer for a semiconductor laser, the high temperature diffusion method includes: introducing saturated steam of dimethyl zinc or diethyl zinc to perform gaseous zinc diffusion.
Alternatively, the above method for fabricating a contact layer for a semiconductor laser, the gasThe diffusion temperature of the zinc is 500-620 ℃, the diffusion time is 5-30 min, and the final diffusion concentration is 1e19/cm3-5 e19/cm3And the diffusion depth is the thickness of the non-doped semiconductor layer +/-50 nm.
The invention provides a method for manufacturing a semiconductor laser, which comprises the following steps:
generating an epitaxial layer of the semiconductor laser;
generating a contact layer by using the manufacturing method of any one of the above methods to obtain a semiconductor laser structure comprising the contact layer;
manufacturing electrodes on the upper surface and the lower surface of the semiconductor laser structure, and performing transverse cleavage to form a semiconductor laser bar, wherein the electrode on the upper surface is attached to the surface of the contact layer;
and respectively evaporating and plating an anti-reflection film and an anti-reflection film on the left side and the right side of the semiconductor laser bar row to obtain the semiconductor laser.
The present invention provides a semiconductor laser, comprising:
a semiconductor laser structure, said semiconductor laser structure comprising: the contact layer is formed by a non-doped semiconductor layer and is provided with a doped region capable of injecting current, and the area of the current which can be injected in the doped region is gradually increased along the cavity length direction;
electrodes are generated on the upper surface and the lower surface of the semiconductor laser structure, wherein the electrodes on the upper surface are attached to the surface of the contact layer; and
and the anti-reflection films are arranged on the left side and the right side of the semiconductor laser structure.
Optionally, in the above semiconductor laser, the semiconductor laser structure further includes:
the semiconductor device includes a substrate, a buffer layer, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer.
The technical scheme of the invention has the following advantages:
1. the invention provides a method for manufacturing a contact layer of a semiconductor laser, which comprises the steps of firstly forming a non-doped semiconductor layer on an epitaxial layer of the semiconductor laser, and then doping the non-doped semiconductor layer to form the contact layer with a doped region capable of injecting current, wherein one electrode of the semiconductor laser is molded on the surface of the contact layer.
The contact layer manufactured by the manufacturing method comprises a doped region and a non-doped region, current cannot be injected into the non-doped region, only the doped region can inject current, and the area of the current which can be injected into the doped region is gradually increased along the cavity length direction, so that the influence of the uneven distribution of the carrier density and the gain along the direction from the reflection increasing film to the reflection reducing film caused by the uneven distribution of the photon density in the resonant cavity is counteracted, the carriers are uniformly distributed in the cavity length direction, and the output power and the performance stability of the semiconductor laser are improved. The electrode of the semiconductor laser is directly manufactured on the contact layer, a dielectric film does not exist between the electrode and the contact layer, and the electrode and the contact layer are firmly adhered and are not easy to fall off.
2. According to the semiconductor laser manufactured by the manufacturing method of the semiconductor laser, the position of the P electrode, which is contacted with the non-doped region, cannot be injected with current due to poor conductivity of the non-doped region; the position of the P electrode in contact with the doped region has good conductivity, and current can be injected. Therefore, under the condition that no dielectric film is arranged between the P electrode and the GaAs contact layer for blocking, the non-uniform injection of the current carrier along the cavity length direction can be realized, so that the influence of the non-uniform distribution of the current carrier density and the gain along the direction from the reflection increasing film to the reflection reducing film caused by the non-uniform distribution of the photon density in the resonant cavity is counteracted, and the output power and the performance stability of the semiconductor laser are improved. The electrode of the semiconductor laser is directly manufactured on the contact layer, a dielectric film does not exist between the electrode and the contact layer, and the electrode and the contact layer are firmly adhered and are not easy to fall off.
3. The invention provides a semiconductor laser, which comprises a semiconductor laser structure, electrodes, and antireflection films on the left and right sides of the semiconductor laser structure. According to the semiconductor laser with the structure, the GaAs contact layer comprises a doped region and a non-doped region, and the area of current which can be injected into the doped region is gradually increased along the cavity length direction, so that the influence of uneven distribution of carrier density and gain along the direction from an anti-reflection film to an anti-reflection film, which is caused by uneven distribution of photon density in a resonant cavity, is counteracted, the carriers are uniformly distributed along the cavity length direction, and the output power and the performance stability of the semiconductor laser are improved. The electrode of the semiconductor laser is directly manufactured and molded on the contact layer, a dielectric film does not exist between the electrode and the contact layer, and the electrode and the contact layer are firmly adhered and are not easy to fall off.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a contact layer for a semiconductor laser according to embodiment 1 of the present invention;
fig. 2 is a complete flowchart of a method for manufacturing a contact layer for a semiconductor laser according to embodiment 1 of the present invention;
FIG. 3 is a schematic illustration of forming an undoped semiconductor layer on an epitaxial layer of a semiconductor laser;
FIG. 4 is a schematic illustration of a dielectric layer deposited on an undoped semiconductor layer;
FIG. 5 is a schematic diagram of a patterned dielectric mask obtained by etching a dielectric layer based on a doped region;
FIG. 6 is a schematic view of the undoped semiconductor layer with the dielectric mask attached thereon after doping and removal of the dielectric mask;
fig. 7 is a schematic view of the semiconductor laser provided in embodiment 2 and embodiment 3.
Description of reference numerals:
a 1-N type GaAs substrate; 2-N type GaAs buffer layer; a 3-N type AlGaAs lower confinement layer; a 4-N type AlGaAs lower waveguide layer; 5-GaAs quantum barrier layer; a 6-InGaAs quantum well layer; 7-GaAs quantum barrier layer; an 8-P type AlGaAs upper waveguide layer; a 9-P type AlGaAs upper confinement layer; a 10-GaAs contact layer; 101-doped region; 102-a non-doped region; 11-a dielectric layer; 111-ring mask; 112-a dielectric mask block; a 121-N electrode; 122-a P electrode; 131-a reflection increasing film; 132-antireflection film.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
The present embodiment provides a method for manufacturing a contact layer for a semiconductor laser, as shown in fig. 1 and fig. 2, including the following steps:
s11: an undoped semiconductor layer is formed on an epitaxial layer of the semiconductor laser. Specifically, an undoped GaAs semiconductor layer is grown on an epitaxial layer of the semiconductor laser in a Metal-organic Chemical Vapor Deposition (MOCVD) apparatus, as shown in fig. 3, for example, the undoped GaAs semiconductor layer has a thickness of 400 nm.
S12: the undoped semiconductor layer is doped to form a contact layer having a doped region 101 capable of injecting current. The doped region 101 is divided into several sections along the cavity length direction (i.e. y-axis direction in fig. 6), and the area of the small doped region 101 in each section is the area of the current that can be injected into the doped region 101. The area of the current that can be injected into the doped region 101 increases gradually along the cavity length direction (negative direction of the y-axis in fig. 6). Specifically, doping the undoped semiconductor layer includes the steps of:
s121, depositing a dielectric layer 11 on the non-doped semiconductor layer. Specifically, as shown in fig. 4, the dielectric layer 11 may be a SiN (silicon nitride) dielectric mask or SiO2The (silicon dioxide) dielectric mask, the dielectric layer 11 may be 100nm thick.
And S122, etching the dielectric layer 11 based on the doped region 101 to obtain a patterned dielectric mask, wherein the area of the dielectric mask in the doped region 101 is gradually reduced along the cavity length direction. In particular, with reference to fig. 5, the dielectric mask comprises a ring-shaped mask 111 surrounding said doped region 101 for defining a region for current injection. The dielectric mask further comprises a plurality of dielectric mask blocks 112 distributed in the doped region 101, and the arrangement density of the plurality of dielectric mask blocks 112 along the cavity length direction is gradually reduced. The shape of the dielectric mask block 112 may be any three-dimensional structure such as a cylinder, a rectangular parallelepiped, a prism, and the like, and the shape thereof is not particularly limited.
The arrangement density of the dielectric mask blocks 112 is related to the optical field distribution in the cavity of the semiconductor laser. The distribution of the optical field inside the resonant cavity along the cavity length direction can be calculated according to the cavity length, the cavity surface reflectivity and other information, then the doped region 101 is divided into a plurality of sections along the cavity length direction, and the area of the small doped region 101 of each section is approximately inversely proportional to the reciprocal of the optical field intensity of the section. Then, the area of the dielectric mask block 112 of each segment can be calculated according to the area of the small doped region 101 of each segment, and the arrangement density of the dielectric mask blocks 112 can be obtained according to the area of the dielectric mask blocks 112. (the area of the small doped region 101 of each segment is the total area of the segment-the area of the dielectric mask block 112). For example, referring to fig. 5, the dielectric mask blocks 112 are arranged in an arithmetic progression along the cavity length direction, and the number of the dielectric mask blocks 112 gradually decreases along the cavity length direction, so that the area capable of injecting current in each segment of the doped region 101 gradually increases along the cavity length direction.
And S123, doping the non-doped semiconductor layer attached with the dielectric mask so that the contact layer can inject current into the doped region 101. Specifically, the non-doped semiconductor layer is doped in a high-temperature diffusion mode. In MOCVD apparatus, H is used2As carrier gas, carrying saturated vapor of DMZn (dimethyl zinc) or DEZn (diethyl zinc) into MOCVD to carry out gaseous zinc diffusion. The diffusion temperature is preferably 520 ℃ and the diffusion concentration is preferably 3e19/cm3The diffusion depth is 400nm +/-50 nm, and the diffusion depth is the thickness +/-50 nm of the non-doped semiconductor layer. The diffusion depth is generally defined as the depth at which the abrupt concentration interface is located, below which there will still be some doping concentration. As long as the difference value between the diffusion depth and the thickness of the non-doped semiconductor layer is ensured to be within a small numerical range, when the diffusion depth is smaller than the thickness of the semiconductor layer, the difference between the diffusion depth and the thickness of the contact layer is not large, the resistance is small, and current can still be injected into each lower functional layer through the contact layer; when the diffusion depth is larger than the thickness of the semiconductor layer, the difference between the diffusion depth and the thickness of the contact layer is not large, and the functional influence on the upper limiting layer positioned below the diffusion depth is small.
The diffusion depth is preferably 400nm, which is the same as the thickness of the undoped semiconductor layer. Or the diffusion temperature of the gaseous zinc is 500-620 ℃, the diffusion time is 5-30 min, and the final diffusion concentration is 1e19/cm3-5e19/cm3. Multiple diffusion modes can be adoptedDifferent DMZn or DEZn flow, diffusion temperature and diffusion time can be adopted for each diffusion, and a specific diffusion concentration distribution curve can be obtained for each diffusion. By superimposing the diffusion concentration profiles for a plurality of times, a specified diffusion concentration profile, such as a step type, a gradual change type, a steep change type, or the like, can be generated.
Compared with the traditional solid zinc diffusion mode, the method adopts the direct diffusion of the gaseous zinc, has no residual diffusion source on the surface of the contact layer after diffusion, saves the steps of growing the diffusion source and cleaning the diffusion source, and simplifies the process steps. The traditional solid zinc diffusion step is various, the error of the zinc diffusion concentration and the diffusion depth is large, the gas zinc diffusion step is few, the error is small, and the accuracy of the diffusion concentration and the diffusion depth can be ensured only by controlling the flow of the gas zinc introduced into the MOCVD through a flowmeter.
As an alternative embodiment of this embodiment, the non-doped semiconductor layer may be doped by a solid-state zinc diffusion method or an ion implantation method.
And S124, removing the dielectric mask on the contact layer. Specifically, referring to fig. 6, wet etching removes the ring-shaped mask 111 and all dielectric mask blocks 112 above the GaAs contact layer 10 to obtain a partially doped GaAs contact layer 10. The wet etching has high selectivity, good uniformity and less damage to each epitaxial layer of the semiconductor laser. Or removing the dielectric mask on the contact layer by adopting dry etching.
According to the manufacturing method, due to the protection effect of the annular mask 111 and the dielectric mask block 112, zinc diffusion is realized only in the GaAs contact layer 10 region which is not covered by the mask, a P-type conductive region is formed, and the rest regions are still in a non-doped state and poor in conductivity.
The ring-shaped mask 111 and the medium mask block 112 are used for blocking to realize selective diffusion on the non-doped GaAs semiconductor layer, the obtained GaAs contact layer 10 comprises a doped region 101 and a non-doped region 102, current cannot be injected into the non-doped region 102, only the doped region 101 can inject current, and the area of the current which can be injected into the doped region 101 is gradually increased along the cavity length direction, so that the influence of uneven distribution of carrier density and gain along the direction from the anti-reflection film 131 to the anti-reflection film 132 caused by uneven distribution of photon density in the resonant cavity is counteracted, carriers are uniformly distributed in the cavity length direction, and the output power and the performance stability of the semiconductor laser are improved. The electrode of the semiconductor laser is directly manufactured on the contact layer, a dielectric film does not exist between the electrode and the contact layer, and the electrode and the contact layer are firmly adhered and are not easy to fall off.
Example 2
The embodiment provides a method for manufacturing a semiconductor laser, which comprises the following steps:
s21: and generating an epitaxial layer of the semiconductor laser. Specifically, in the MOCVD equipment, an N-type GaAs (gallium arsenide) substrate 1 is grown first, and then an N-type GaAs buffer layer 2, an N-type AlGaAs (aluminum gallium arsenide) lower limiting layer 3, an N-type AlGaAs lower waveguide layer 4, a GaAs quantum barrier layer 5, an InGaAs (indium gallium arsenide) quantum well layer 6, a GaAs quantum barrier layer 7, a P-type AlGaAs upper waveguide layer 8, and a P-type AlGaAs upper limiting layer 9 are sequentially grown on the N-type GaAs substrate 1, and the epitaxial layers include the above layers except the N-type GaAs substrate 1.
S22: a contact layer was formed by the method described in example 1, and a semiconductor laser structure including the contact layer was obtained. The semiconductor laser structure comprises an N-type GaAs substrate 1, an epitaxial layer, and a partially doped GaAs contact layer 10 in embodiment 1.
S23: and manufacturing electrodes on the upper surface and the lower surface of the semiconductor laser structure, and performing transverse cleavage to form a semiconductor laser bar, wherein the electrode on the upper surface is attached to the surface of the contact layer. Specifically, referring to fig. 7, a P electrode 122 and an N electrode 121 are respectively formed at the upper and lower ends of the semiconductor laser structure, and the P electrode 122 is directly adhered to the partially doped GaAs contact layer 10.
S24: and respectively evaporating and plating an anti-reflection film 132 and an anti-reflection film 131 on the left side and the right side of the semiconductor laser bar row to obtain the semiconductor laser.
In the semiconductor laser manufactured by the method, the position of the P electrode 122 in contact with the non-doped region 102 has poor conductivity of the non-doped region 102, and current cannot be injected; the P-electrode 122 is in contact with the doped region 101, so that the conductivity is good and current can be injected. Therefore, under the condition that no dielectric film is blocked between the P electrode 122 and the GaAs contact layer 10, the non-uniform injection of the carriers along the cavity length direction can be realized.
According to the invention, selective diffusion is realized on the non-doped GaAs semiconductor layer through the blocking of the annular mask 111 and the dielectric mask block 112, the obtained GaAs contact layer 10 comprises the doped region 101 and the non-doped region 102, and the area of current which can be injected into the doped region 101 is gradually increased along the cavity length direction, so that the influence of the uneven distribution of the carrier density and the gain along the direction from the reflection increasing film 131 to the reflection reducing film 132 caused by the uneven distribution of the photon density in the resonant cavity is counteracted, the carrier is uniformly distributed in the cavity length direction, and the output power and the performance stability of the semiconductor laser are improved. The electrode of the semiconductor laser is directly manufactured on the contact layer, a dielectric film does not exist between the electrode and the contact layer, and the electrode and the contact layer are firmly adhered and are not easy to fall off.
Example 3
The present embodiment provides a semiconductor laser, which includes a semiconductor laser structure, electrodes formed on upper and lower surfaces of the semiconductor laser structure, and antireflection films 132 and 131 on left and right sides of the semiconductor laser structure, see fig. 7.
The semiconductor laser structure comprises an N-type GaAs substrate 1, an epitaxial layer and a contact layer. The epitaxial layer comprises an N-type GaAs buffer layer 2, an N-type AlGaAs lower limiting layer 3, an N-type AlGaAs lower waveguide layer 4, a GaAs quantum barrier layer 5, an InGaAs quantum well layer 6, a GaAs quantum barrier layer 7, a P-type AlGaAs upper waveguide layer 8 and a P-type AlGaAs upper limiting layer 9.
The electrodes include a P electrode 122 and an N electrode 121, the P electrode 122 is located below the N-type GaAs substrate 1, and the N electrode 121 is located above the GaAs contact layer 10.
The contact layer is a GaAs contact layer 10 of a doped region 101 which is formed on a non-doped semiconductor layer and can inject current, and the area of the current which can be injected into the doped region 101 is gradually increased along the cavity length direction; the upper surface of the P electrode 122 is directly attached to the contact layer surface.
In the semiconductor laser with the structure, the GaAs contact layer 10 comprises the doped region 101 and the non-doped region 102, and the area of current which can be injected into the doped region 101 is gradually increased along the cavity length direction so as to counteract the influence of the uneven distribution of the carrier density and the gain along the direction from the reflection increasing film 131 to the reflection reducing film 132 caused by the uneven distribution of the photon density in the resonant cavity, so that the carriers are uniformly distributed along the cavity length direction, and the output power and the performance stability of the semiconductor laser are improved. The electrode of the semiconductor laser is directly manufactured and molded on the contact layer, a dielectric film does not exist between the electrode and the contact layer, and the electrode and the contact layer are firmly adhered and are not easy to fall off.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A method of fabricating a contact layer for a semiconductor laser, comprising:
forming a non-doped semiconductor layer on an epitaxial layer of the semiconductor laser;
and doping the non-doped semiconductor layer to form a contact layer with a doped region capable of injecting current, wherein the area of the current capable of being injected in the doped region is gradually increased along the cavity length direction, and one electrode of the semiconductor laser is formed on the surface of the contact layer.
2. A method of fabricating a contact layer for a semiconductor laser as claimed in claim 1 wherein doping the undoped semiconductor layer comprises:
depositing a dielectric layer on the undoped semiconductor layer;
etching the dielectric layer based on the doped region to obtain a patterned dielectric mask, wherein the area of the dielectric mask in the doped region is gradually reduced along the cavity length direction;
doping the non-doped semiconductor layer attached with the dielectric mask so that the contact layer can inject current in the doped region;
and removing the dielectric mask on the contact layer.
3. A method of fabricating a contact layer for a semiconductor laser as claimed in claim 2 wherein the dielectric mask comprises a ring-shaped mask surrounding the doped region for defining a region of current injection.
4. The method of claim 3 wherein the dielectric mask further comprises a plurality of dielectric mask blocks distributed in the doped region, and the dielectric mask blocks are arranged at a decreasing density along the cavity length direction.
5. A method of fabricating a contact layer for a semiconductor laser as claimed in claim 2 wherein doping the undoped semiconductor layer to which the dielectric mask is attached comprises:
and carrying out doping treatment on the non-doped semiconductor layer in a high-temperature diffusion mode.
6. The method of claim 5 wherein the high temperature diffusion comprises: introducing saturated steam of dimethyl zinc or diethyl zinc to perform gaseous zinc diffusion.
7. The method of claim 6 wherein said gaseous zinc has a diffusion temperature of 500-620 ℃, a diffusion time of 5-30 min, and a final diffusion concentration of 1e19/cm3-5 e19/cm3And the diffusion depth is the thickness of the non-doped semiconductor layer +/-50 nm.
8. A method of fabricating a semiconductor laser, comprising:
generating an epitaxial layer of the semiconductor laser;
forming a contact layer by using the method of any one of claims 1-7 to obtain a semiconductor laser structure comprising a contact layer;
manufacturing electrodes on the upper surface and the lower surface of the semiconductor laser structure, and performing transverse cleavage to form a semiconductor laser bar; wherein the electrode on the upper surface is attached to the surface of the contact layer;
and respectively evaporating and plating an anti-reflection film and an anti-reflection film on the left side and the right side of the semiconductor laser bar row to obtain the semiconductor laser.
9. A semiconductor laser, comprising:
a semiconductor laser structure, said semiconductor laser structure comprising: the contact layer is formed by a non-doped semiconductor layer and is provided with a doped region capable of injecting current, and the area of the current which can be injected in the doped region is gradually increased along the cavity length direction;
electrodes are generated on the upper surface and the lower surface of the semiconductor laser structure, wherein the electrodes on the upper surface are attached to the surface of the contact layer; and
and the anti-reflection films are arranged on the left side and the right side of the semiconductor laser structure.
10. A semiconductor laser as claimed in claim 9 wherein the semiconductor laser structure further comprises:
the semiconductor device includes a substrate, a buffer layer, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer.
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