CN109212920B - Display substrate, manufacturing method of alignment mark of display substrate, display panel and display device - Google Patents

Display substrate, manufacturing method of alignment mark of display substrate, display panel and display device Download PDF

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CN109212920B
CN109212920B CN201811217748.1A CN201811217748A CN109212920B CN 109212920 B CN109212920 B CN 109212920B CN 201811217748 A CN201811217748 A CN 201811217748A CN 109212920 B CN109212920 B CN 109212920B
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substrate
display
film layer
alignment film
alignment mark
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CN109212920A (en
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李海龙
刘亮亮
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation

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  • Electroluminescent Light Sources (AREA)

Abstract

本申请实施例提供了一种显示基板，包括：基底，基底包括显示区域和周边区域，基底在周边区域需要设置对位标记的位置处设置有凹陷部；对位膜层，位于基底的周边区域，在凹陷部对应位置处断开，且对位膜层的图案与对位标记图案相同。本申请实施例还提供了显示面板、显示装置和显示基板对位标记的制作方法。由于本申请实施例在基底的周边区域需要设置对位标记的位置处设置有凹陷部，当刻蚀对位膜层产生过刻时，过刻能够在凹陷部的侧壁上进行，避免了由于过刻而导致图案的均一性较差的问题，提升了图案整体的一致性，进一步增强了相关显示装置的显示效果。

Figure 201811217748

An embodiment of the present application provides a display substrate, comprising: a substrate, the substrate includes a display area and a peripheral area, the substrate is provided with a recess at the position where alignment marks need to be arranged in the peripheral area; an alignment film layer is located in the peripheral area of the substrate , disconnected at the corresponding position of the concave portion, and the pattern of the alignment film layer is the same as that of the alignment mark. Embodiments of the present application also provide a display panel, a display device, and a method for fabricating an alignment mark on a display substrate. Since the embodiment of the present application is provided with a concave portion at the position where the alignment mark needs to be set in the peripheral region of the substrate, when the alignment film layer is over-etched by etching, the over-etching can be performed on the sidewall of the concave portion, avoiding the need for The problem of poor pattern uniformity caused by over-etching improves the overall consistency of the pattern and further enhances the display effect of the related display device.

Figure 201811217748

Description

Display substrate, manufacturing method of alignment mark of display substrate, display panel and display device
Technical Field
The invention relates to the technical field of display, in particular to a display substrate, a manufacturing method of an alignment mark of the display substrate, a display panel and a display device.
Background
The demand for various display devices has increased with the rise of the global information society. Accordingly, much effort has been devoted to the research and development of various flat display devices, such as liquid crystal display devices, plasma display devices, electroluminescent display devices, and vacuum fluorescent display devices. Liquid crystal display devices have been increasingly used in people's lives and works due to their characteristics of low power consumption, low cost, no radiation, easy operation, etc., and are widely used in various fields, such as homes, public places, offices, personal electronic related products, etc.
In the Array process of the display device, the applicant found that, in the Wet etching (Wet etch), the size (Critical Dimension; CD) of the Pattern (Pattern) etched on the substrate is larger than the actually required size due to the over-etching, so that the uniformity of the Pattern is easily reduced, and the display effect of the display device is further reduced.
Disclosure of Invention
In view of the above, the present invention provides a display substrate, a method for manufacturing alignment marks of the display substrate, a display panel and a display device, which can solve the problem of poor uniformity of patterns due to over-etching in the prior art.
In order to solve the above problem, the embodiments of the present application mainly provide the following technical solutions:
in a first aspect, an embodiment of the present application discloses a display substrate, including:
the substrate comprises a display area and a peripheral area, and a concave part is arranged at the position of the peripheral area where the alignment mark needs to be arranged;
and the alignment film layer is positioned in the peripheral area of the substrate, is disconnected at the corresponding position of the concave part, and has the same pattern as the alignment mark pattern.
In a second aspect, embodiments of the present application disclose a display panel, including: the display substrate of the first aspect.
In a third aspect, an embodiment of the present application discloses a display device, including: the display panel of the second aspect.
In a fourth aspect, an embodiment of the present application discloses a method for manufacturing an alignment mark of a display substrate, including:
providing a substrate comprising a display area and a peripheral area;
manufacturing a concave part at the position where the alignment mark needs to be formed in the peripheral area of the substrate by adopting a composition process;
manufacturing an alignment film layer on the substrate with the concave part, and coating photoresist on the alignment film layer;
removing the photoresist at the corresponding position of the bottom area of the depressed part by adopting a composition process to expose the alignment film layer;
and removing the exposed alignment film layer by adopting a composition process, and removing the residual photoresist to form an alignment mark pattern.
By means of the technical scheme, the technical scheme provided by the embodiment of the application at least has the following advantages:
because the substrate of the embodiment of the application is provided with the concave part at the position where the alignment mark needs to be arranged in the peripheral area, when the alignment film layer is formed on the substrate, the alignment film layer can be formed on the side wall of the concave part. When the mode that adopts wet etching makes counterpoint rete when the depressed part corresponds position department disconnection, and wet etching has the condition of overruling, when this application embodiment takes place the overruling, even the degree of overruling is the same with prior art, because the overruling can be gone on in the direction of the lateral wall of depressed part, consequently, after the etching counterpoint rete, the size of the pattern of actual counterpoint rete is similar with the standard size of counterpoint mark pattern, can not lead to the problem that counterpoint mark pattern can't be counterpointed, thereby the effectual relatively poor problem of homogeneity of avoiding leading to the pattern owing to overruling, relevant display device's display effect has further been strengthened.
The foregoing description is only an overview of the technical solutions of the embodiments of the present application, and the embodiments of the present application can be implemented according to the content of the description in order to make the technical means of the embodiments of the present application more clearly understood, and the detailed description of the embodiments of the present application will be given below in order to make the foregoing and other objects, features, and advantages of the embodiments of the present application more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the embodiments of the present application. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic structural diagram of a conventional display substrate after wet etching an electrode layer, wherein a difference between a pattern size after the wet etching and an actually required pattern size is shown;
FIG. 2 is a schematic diagram of a position of a recess in a display substrate according to an embodiment of the present disclosure;
fig. 3 is a display substrate manufactured by the manufacturing method according to the embodiment of the present disclosure, wherein a difference between a critical dimension after the etching and an actually required critical dimension is shown;
FIG. 4 is a flowchart illustrating a method of fabricating a display substrate according to an embodiment of the present disclosure;
FIG. 5 is a schematic structural diagram after a film layer is disposed on a substrate;
FIG. 6 is a schematic structural diagram of a recess formed after a halftone process is performed on the substrate in FIG. 5;
FIG. 7 is a schematic view of the structure of FIG. 6 after a metal layer is coated on the substrate;
FIG. 8 is a schematic view of the structure of FIG. 7 showing a portion of the metal layer exposed on the substrate;
FIG. 9 is a schematic structural diagram of the substrate in FIG. 8 after etching the metal layer;
fig. 10 is a schematic structural diagram after the photoresist in fig. 9 is removed.
The reference numerals are introduced as follows:
1-a substrate base plate; 2-an organic layer; 3-aligning the film layer; 4-photoresist; 5-normal size of the pattern of the alignment film layer; 6-actual size of the pattern of the alignment film layer; 7-a recess; 8-half-step mask plate.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Fig. 1 is a schematic structural diagram of a conventional display substrate after wet etching an electrode layer, in which a difference between a pattern size after overetching and an actually required pattern size is shown. As shown in fig. 1, the display substrate includes a base having a substrate 1 and an organic layer 2, the organic layer 2 is disposed on the substrate 1, an alignment film layer 3 and a photoresist 4 are sequentially coated on the organic layer 2, and fig. 1 only shows a structure at a position where an alignment mark needs to be disposed in a peripheral region of the base.
As shown in fig. 1, after the photoresist at the predetermined position is removed according to the predetermined size by the patterning process, when the exposed alignment film layer 3 is further removed by wet etching, the degree of over-etching is difficult to control during the wet etching, so that the over-etched size far exceeds the normal size, thereby causing a problem of poor pattern uniformity.
Specifically, as shown in fig. 1, after the exposed alignment film layer 3 is removed by wet etching, the normal size of the pattern to be formed is the size marked at the position of the reference mark 5, and in the actual etching process, due to too long etching time or other reasons, an over-etching situation is easily generated, for example, when the over-etching occurs on the alignment film layer 3, the size of the actual pattern formed at this time is the size marked at the position of the reference mark 6, as can be seen from fig. 1, the size of the actual pattern is larger than the normal size of the pattern to be formed, such as the size of the actual pattern is larger than the normal size of the pattern to be formed by 2 micrometers, that is, the size of each of the left side and the right side is 1 micrometer.
The fact that the size of the actual pattern is larger than the normal size of the pattern to be formed is also called as the pixel Position Precision (PPA) is increased, and the increased PPA may cause the problem that the alignment mark pattern cannot be aligned, and further may seriously affect the display effect of the display panel.
Therefore, a new display panel is needed to solve the technical problem in the prior art that the alignment mark pattern cannot be aligned due to over-etching generated during wet etching, so that the uniformity of the pattern is poor.
In a first aspect, fig. 2 and 3 illustrate a display substrate provided by an embodiment of the present application, and as shown in fig. 2 and 3, the display substrate includes: a substrate and a contraposition film layer 3. The substrate comprises a display area and a peripheral area, only the structure of the peripheral area of the substrate at the position where the alignment mark needs to be arranged is shown in fig. 3, and the substrate is provided with a concave part 7 at the position where the alignment mark needs to be arranged in the peripheral area. In the present embodiment, the base includes a base substrate 1 and an organic layer 2. The alignment film 3 is located in the peripheral region of the substrate (i.e., disposed on the organic layer 2), the alignment film 3 is broken at the corresponding position of the recess, and the pattern of the alignment film 3 is the same as the alignment mark pattern.
Because the substrate of the embodiment of the application is provided with the concave part at the position where the alignment mark needs to be arranged in the peripheral area, when the alignment film layer is formed on the substrate, the alignment film layer can be formed on the side wall of the concave part. When the alignment film layer is disconnected at the corresponding position of the recess by adopting the wet etching method, and the wet etching method has the over-etching condition, even if the over-etching degree is the same as that in the prior art, the over-etching can be performed on the side wall (i.e. approximately vertical to the horizontal surface) of the recess instead of along the horizontal direction of the film layer as in the prior art when the over-etching occurs in the embodiment of the application. As shown in fig. 3, after the alignment layer is etched, the normal size 5 of the pattern of the alignment layer (i.e., the standard size of the alignment mark pattern) is substantially the same as the actual size 6 of the pattern actually etched on the alignment layer, so as to avoid the problem of poor uniformity of the pattern due to the fact that the over-etching extends along the horizontal direction of the layer, improve the overall uniformity of the pattern, and further enhance the display effect of the related display device.
Four substrates, which are substrates a _ Q, B _ Q, C _ Q and D _ Q, are provided in fig. 2, and the depressions in the embodiment of the present application are provided at the four corners of the substrates a _ Q, B _ Q, C _ Q and D _ Q.
Alternatively, since the normal dimension 5 of the desired pattern on the alignment film layer is substantially the same as the actual dimension 6 of the pattern actually etched on the alignment film layer, in a preferred embodiment, the maximum value of the width of the recess 7 can be equal to the dimension of the alignment mark pattern, such as: when the cross section of the depressed part is in the shape of an inverted trapezoid, the dimension of a longer bottom edge of the inverted trapezoid is equal to the dimension of the alignment mark pattern.
Optionally, the display substrate of the embodiment of the present application is an Organic electroluminescent display substrate, specifically, the display substrate of the embodiment of the present application is an Organic Light-Emitting Diode (OLED) display substrate, and at this time, the recess in the embodiment of the present application is disposed at a position where the alignment mark needs to be disposed in the peripheral area of the Organic electroluminescent display substrate.
Optionally, in this embodiment, when the display substrate is an organic electroluminescent display substrate, the alignment film layer may be located on the same layer as the anode of the organic electroluminescent display substrate. Specifically, the substrate comprises a substrate base plate 1 and an organic layer 2, the substrate base plate 1 can be a glass base plate, the organic layer 2 can be manufactured in the same layer with the pixel limiting layer, a metal layer is deposited on the organic layer 2, and then the pattern of the alignment film layer and the anode are manufactured in the same layer through a composition process.
Specifically, when the same layer is manufactured, a metal layer is deposited firstly, photoresist is coated on the metal layer, the photoresist is exposed by adopting a half-step mask plate, a part of light-transmitting area of the half-step mask plate corresponds to the position of the concave part, a light-tight area of the half-step mask plate corresponds to the area of the pattern of the alignment film layer and the area of the anode, and a complete light-transmitting area corresponds to the area of other patterns. And then etching to remove the metal layer corresponding to the complete light transmission area, removing the photoresist corresponding to the partial light transmission area, removing the exposed metal layer by adopting wet etching, and finally removing the photoresist to form the patterns of the anode and the alignment film layer.
Alternatively, the cross section of the recess 7 in the embodiment of the present application may be an inverted trapezoid with a depth of
Figure BDA0001833987840000061
However, it will be apparent to those skilled in the art that the recess 7 may be provided in other suitable shapes and depths according to the actual requirements of the product.
First, in the embodiment of the present application, there is no other pattern design for each film layer at the position of the alignment mark pattern, and the structure of the recess does not affect the other pattern designs. Secondly, the alignment mark pattern only plays a role in alignment, and whether faults occur on other film layers at the position is not needed to be considered.
Based on the same inventive concept, in a second aspect, an embodiment of the present application discloses a display panel, which includes: the display substrate in the first aspect.
Based on the same inventive concept, in a third aspect, an embodiment of the present application discloses a display device, including: the display panel in the second aspect.
Based on the same inventive concept, in a fourth aspect, as shown in fig. 4, an embodiment of the present application discloses a method for manufacturing an alignment mark of a display substrate, including:
s101: a substrate is provided, the substrate including a display area and a peripheral area.
S102: and manufacturing a concave part at the position where the alignment mark needs to be formed in the peripheral area of the substrate by adopting a patterning process.
It should be noted that the base of the embodiment of the present application includes a substrate and an organic layer disposed thereon, and the recess is directly formed on the organic layer by using a half-step mask. However, it is also possible for those skilled in the art to use a common reticle for making the recess, and the base may include only the base substrate on which the recess is made directly.
S103: and manufacturing an alignment film layer on the substrate with the concave part, and coating photoresist on the alignment film layer.
S104: and removing the photoresist at the corresponding position of the bottom area of the concave part by adopting a composition process to expose the alignment film layer.
S105: and removing the exposed alignment film layer by adopting a composition process, and removing the residual photoresist to form an alignment mark pattern.
Because the substrate of the embodiment of the application is provided with the concave part at the position where the alignment mark needs to be formed in the peripheral area, the alignment film layer can be formed on the side wall of the concave part when the alignment film layer is formed. When the exposed alignment film layer is removed by adopting a wet etching mode, the wet etching has the over-etching condition, and when the over-etching occurs in the embodiment of the application, even if the degree of the over-etching is the same as that in the prior art, the over-etching is performed on the side wall of the concave part (namely, the horizontal surface which is approximately vertical to the horizontal surface) instead of the horizontal direction of the film layer as in the prior art, so that after the alignment film layer is etched, the actual size of the formed alignment mark pattern is approximately the same as the standard size of the alignment mark pattern, the problem of poor uniformity of the pattern caused by the fact that the over-etching is performed along the horizontal direction of the film layer is avoided, the overall uniformity of the pattern is improved, and the display effect of the related display device is further enhanced.
In the above S104, the removing the photoresist at the corresponding position of the bottom region of the recess portion by using the patterning process includes:
exposing the photoresist by using a half-step mask plate, wherein a part of light-transmitting area of the half-step mask plate corresponds to the bottom area of the depressed part, and a light-tight area of the half-step mask plate corresponds to the area of the pattern of the alignment mark; and removing the photoresist at the corresponding position of the partial light-transmitting area of the half-step mask plate by ashing or stripping.
In the above S105, the removing the exposed alignment film layer by using the patterning process includes:
and removing the exposed alignment film layer by wet etching.
Optionally, in an embodiment, when the display substrate is an organic electroluminescent display substrate, the alignment mark pattern is fabricated in the same layer as the anode of the organic electroluminescent display substrate.
The method for manufacturing the alignment mark of the display substrate according to the embodiment of the present application is described in detail below with reference to fig. 5 to 10:
as shown in fig. 5, an organic layer 2 is disposed on a substrate 1, and serves as a base in this embodiment of the application, and a half-step mask 8 is used to perform exposure processing on the organic layer 2, only a structure of a position where an alignment mark needs to be formed in a peripheral region of the base is shown in the figure, other positions do not relate to an improvement point of this application, and are not described herein again, a part of a light-transmitting region of the half-step mask 8 corresponds to a region where a recess needs to be formed, a light-opaque region of the half-step mask corresponds to a subsequent region where an alignment mark pattern needs to be formed, and the organic layer 2 below the part of the light-transmitting region of the half-step mask 8 is removed, so that the recess 7 provided in this embodiment of the application is formed on the organic layer 2, as shown.
Next, as shown in fig. 7, an alignment film layer 3 is formed on the organic layer 2, and specifically, a metal layer is deposited on the organic layer 2.
Further, a photoresist 4 is coated on the alignment film layer 3, and in the embodiment of the present application, the photoresist at the position corresponding to the bottom region of the recess 7 is removed by using a patterning process, so that the alignment film layer 3 at the position corresponding to the bottom region of the recess 7 is exposed, as shown in fig. 8.
Specifically, a half-step mask plate is adopted to expose the photoresist 4, a part of light transmission area of the half-step mask plate corresponds to the bottom area of the concave part, and a light-tight area of the half-step mask plate corresponds to the area of the pattern of the alignment mark; and removing the photoresist at the corresponding position of the partial light-transmitting area of the half-step mask plate by adopting an ashing mode.
As shown in fig. 9, the exposed alignment film layer 3 is removed by, for example, wet etching. In the wet etching process, when the over-etching occurs, the over-etching can be performed along the direction of the side wall of the recess, not along the horizontal direction of the film layer (for example, fig. 1) as in the prior art, so that the problem that the alignment mark pattern cannot be aligned due to PPA fatness can be reduced.
Finally, the remaining photoresist is removed to form an alignment mark pattern, as shown in fig. 10.
The beneficial effects obtained by applying the embodiment of the application comprise:
because the substrate of the embodiment of the application is provided with the concave part at the position where the alignment mark needs to be arranged in the peripheral area, when the alignment film layer is formed on the substrate, the alignment film layer can be formed on the side wall of the concave part. When the alignment film layer is disconnected at the corresponding position of the concave part by adopting a wet etching mode, and the wet etching has the over-etching condition, when the over-etching occurs in the embodiment of the application, the over-etching can be performed along the direction of the side wall of the concave part instead of the horizontal direction of the film layer in the prior art, therefore, even if the over-etching degree of the embodiment of the application is the same as that of the prior art, after the alignment film layer is etched, the size of the actual alignment film layer is similar to the standard size of the alignment mark pattern, and the problem that the alignment mark pattern cannot be aligned can not be caused, so that the problem that the uniformity of the pattern is poor due to the over-etching is effectively avoided, the overall consistency of the pattern is improved, and the display effect of a related display device is further enhanced.
The foregoing is only a partial embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (9)

1.一种显示基板，其特征在于，包括：1. A display substrate, characterized in that, comprising: 基底，所述基底包括显示区域和周边区域，所述基底在所述周边区域需要设置对位标记的位置处设置有凹陷部；a substrate, the substrate includes a display area and a peripheral area, and the substrate is provided with a concave portion at the position where the alignment mark needs to be arranged in the peripheral area; 对位膜层，位于所述基底的周边区域，在所述凹陷部对应位置处断开，且所述对位膜层的图案与对位标记图案相同；The alignment film layer is located in the peripheral area of the substrate, and is disconnected at the corresponding position of the recessed portion, and the pattern of the alignment film layer is the same as the alignment mark pattern; 所述凹陷部的宽度的最大值与所述对位标记图案的尺寸相等。The maximum value of the width of the recessed portion is equal to the size of the alignment mark pattern. 2.如权利要求1所述的显示基板，其特征在于，所述显示基板为有机电致发光显示基板。2 . The display substrate of claim 1 , wherein the display substrate is an organic electroluminescence display substrate. 3 . 3.如权利要求2所述的显示基板，其特征在于，所述对位膜层与所述有机电致发光显示基板的阳极位于同一层。3 . The display substrate of claim 2 , wherein the alignment film layer and the anode of the organic electroluminescence display substrate are located on the same layer. 4 . 4.如权利要求1所述的显示基板，其特征在于，所述凹陷部的截面呈倒梯形，所述凹陷部的深度为
Figure FDA0002338972330000011
4 . The display substrate of claim 1 , wherein the cross-section of the recessed portion is an inverted trapezoid, and the depth of the recessed portion is 4. 5 .
Figure FDA0002338972330000011
 5.一种显示面板，其特征在于，包括：权利要求1-4任一项所述的显示基板。5. A display panel, comprising: the display substrate according to any one of claims 1-4. 6.一种显示装置，其特征在于，包括：权利要求5所述的显示面板。6 . A display device, comprising: the display panel of claim 5 . 7 . 7.一种用于如权利要求1-4任一项所述的显示基板的对位标记的制作方法，其特征在于，包括：7. A method for making an alignment mark for a display substrate according to any one of claims 1-4, characterized in that, comprising: 提供基底，所述基底包括显示区域和周边区域；providing a substrate including a display area and a peripheral area; 采用构图工艺在所述基底周边区域需要形成所述对位标记的位置处制作凹陷部；A patterning process is used to form a recess at the position where the alignment mark needs to be formed in the peripheral region of the substrate; 在制作有所述凹陷部的基底上制作对位膜层，并在所述对位膜层上涂覆光刻胶；Making an alignment film layer on the substrate on which the recessed portion is made, and coating photoresist on the alignment film layer; 采用构图工艺去除所述凹陷部底部区域对应位置处的光刻胶，暴露出对位膜层；Using a patterning process to remove the photoresist at the position corresponding to the bottom region of the recessed portion to expose the alignment film layer; 采用构图工艺去除暴露出的对位膜层，并去除剩余的光刻胶，形成对位标记图案。The exposed alignment film layer is removed by a patterning process, and the remaining photoresist is removed to form an alignment mark pattern. 8.如权利要求7所述的制作方法，其特征在于，所述采用构图工艺去除所述凹陷部底部区域对应的光刻胶，包括：8. The manufacturing method of claim 7, wherein the removing the photoresist corresponding to the bottom region of the recessed portion by a patterning process comprises: 采用半阶掩膜板对所述光刻胶进行曝光，所述半阶掩膜板的部分透光区域对应所述凹陷部底部区域，所述半阶掩膜板的不透光区对应所述对位标记图案的区域；The photoresist is exposed by using a half-step mask, the partially transparent area of the half-step mask corresponds to the bottom area of the recess, and the opaque area of the half-step mask corresponds to the The area of the alignment mark pattern; 采用灰化或剥离的方式去除所述半阶掩膜板的部分透光区域对应位置处的光刻胶；Remove the photoresist at the position corresponding to the partially light-transmitting area of the half-step mask by ashing or peeling; 所述采用构图工艺去除暴露出的对位膜层，包括：The described adopting patterning process to remove the exposed alignment film layer includes: 采用湿法刻蚀去除暴露出的对位膜层。Use wet etching to remove the exposed alignment film layer. 9.如权利要求7所述的制作方法，其特征在于，所述显示基板为有机电致发光显示基板，所述对位标记图案与所述有机电致发光显示基板的阳极同层制作。9 . The manufacturing method of claim 7 , wherein the display substrate is an organic electroluminescence display substrate, and the alignment mark pattern is fabricated in the same layer as the anode of the organic electroluminescence display substrate. 10 .
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