CN104637852B - A kind of stripping means of flexible base board - Google Patents
A kind of stripping means of flexible base board Download PDFInfo
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- CN104637852B CN104637852B CN201310549945.4A CN201310549945A CN104637852B CN 104637852 B CN104637852 B CN 104637852B CN 201310549945 A CN201310549945 A CN 201310549945A CN 104637852 B CN104637852 B CN 104637852B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
- H10P72/7442—Separation by peeling
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Abstract
本发明公开了一种柔性基板的剥离方法。该方法包括：A、在硬质基板上形成非结晶状的离型层，该离型层由受热后可形成片状结晶的材料制成；B、在所述离型层上形成所述柔性基板；C、在所述柔性基板上制作电子或光学器件；D、对所述离型层加热，使所述离型层转变为容易剥离的层状结构，将所述柔性基板从硬质基板上剥离。本发明的柔性基板的剥离方法，利用了离型层材料在受热后会形成片状结晶的特性，在柔性基板上制作完电子或光学器件后，通过对离型层加热，使离型层转变为容易剥离的层状结构，从而可以非常容易方便地将柔性基板从硬质基板上剥离。本发明不需要大型设备，实现起来简单、操作方便。
The invention discloses a method for peeling off a flexible substrate. The method includes: A. forming an amorphous release layer on a hard substrate, and the release layer is made of a material that can form flaky crystals after being heated; B. forming the flexible release layer on the release layer. Substrate; C, making electronic or optical devices on the flexible substrate; D, heating the release layer, making the release layer into a layered structure that is easy to peel off, and separating the flexible substrate from the hard substrate Peel off. The stripping method of the flexible substrate of the present invention utilizes the property that the release layer material will form flaky crystals after being heated, and after the electronic or optical device is manufactured on the flexible substrate, the release layer is transformed by heating the release layer It is a layered structure that is easy to peel off, so that the flexible substrate can be peeled off from the hard substrate very easily and conveniently. The invention does not need large-scale equipment, and is simple to realize and convenient to operate.
Description
技术领域technical field
本发明涉及柔性电子器件制造技术，具体地说，是一种制造柔性电子器件时，对柔性基板进行剥离的方法。The invention relates to a flexible electronic device manufacturing technology, in particular to a method for peeling off a flexible substrate when manufacturing a flexible electronic device.
背景技术Background technique
柔性光电子学，即将光电子器件，如显示器、芯片、电路、电源、传感器等制作于可弯曲的基板之上，以实现传统光电子器件所不能实现的功能、成本或用户体验的优势。由于传统硬质基板能够与传统设备兼容，并可以精确对位形成微细图案等，现有主流的柔性器件，如柔性AMOLED的制备，需要将柔性基板先制备或吸附于硬质基板表面，进行器件制备后再将柔性基板从硬质基板上剥离。因此，剥离技术成为这类柔性器件生产的关键。Flexible optoelectronics, that is, optoelectronic devices, such as displays, chips, circuits, power supplies, sensors, etc., are fabricated on bendable substrates to achieve functions, costs, or user experience advantages that traditional optoelectronic devices cannot achieve. Since traditional hard substrates are compatible with traditional equipment and can be precisely aligned to form fine patterns, the preparation of existing mainstream flexible devices, such as flexible AMOLEDs, requires the flexible substrate to be prepared or adsorbed on the surface of the hard substrate first. After preparation, the flexible substrate is peeled off from the rigid substrate. Therefore, the exfoliation technique becomes the key to the production of such flexible devices.
以柔性AMOLED为例，目前主流的柔性光电子器件采用激光的方式进行剥离，即在高分子基板和玻璃界面施以高强度激光，将界面的一层高分子薄层烧蚀，从而实现剥离。这种方式已能实现量产，但是由于激光扫描尺寸的限制，难以应用于大尺寸柔性屏体的制备，同时由于激光剥离设备较为复杂，仅有少数公司有能力设计，为了降低成本，需要更为简易、更不依赖于复杂设备的剥离方式。Taking flexible AMOLED as an example, the current mainstream flexible optoelectronic devices are peeled off by laser, that is, a high-intensity laser is applied to the interface between the polymer substrate and the glass to ablate a thin polymer layer at the interface to achieve peeling. This method has been able to achieve mass production, but due to the limitation of laser scanning size, it is difficult to apply to the preparation of large-size flexible screens. At the same time, due to the complexity of laser stripping equipment, only a few companies have the ability to design. In order to reduce costs, more The stripping method is simple and does not depend on complicated equipment.
目前也有许多研究机构和公司在剥离技术方面提供了不同的解决方案，如将载体玻璃完全刻蚀；或将玻璃上的离型层湿法刻蚀；或将屏体四周粘附于玻璃上，而中间不粘附，待器件制作完成后将中间切下等。中国专利申请200910159470.9揭示了一种剥离的方法，用带层状结构的粘土作为柔性基板，用a-Si作为离型层，给a-Si施加能量（优选激光）让其熔融，粘附性变差，从而剥离柔性基板。但是，该专利申请仅适用于特殊的粘土基板，离型层只能是a-Si，适用范围很窄；并且，从实现方式来看，该专利申请仍然需要很高的剥离能量，仍然需要如激光器这样的复杂设备。At present, many research institutions and companies provide different solutions in terms of stripping technology, such as completely etching the carrier glass; or wet etching the release layer on the glass; or adhering the screen around the glass, The middle is not adhered, and the middle is cut off after the device is manufactured. Chinese patent application 200910159470.9 discloses a peeling method, using clay with a layered structure as a flexible substrate, using a-Si as a release layer, applying energy (preferably laser) to a-Si to melt it, and the adhesion becomes Poor, thereby peeling off the flexible substrate. However, this patent application is only applicable to special clay substrates, and the release layer can only be a-Si, so the scope of application is very narrow; and, from the perspective of implementation, this patent application still requires high peeling energy, and still needs such Complex devices such as lasers.
发明内容Contents of the invention
本发明要解决的技术问题是提供一种实现简单、成本低、容易操作的柔性基板的剥离方法。The technical problem to be solved by the present invention is to provide a simple, low-cost and easy-to-operate flexible substrate peeling method.
为了解决上述技术问题，本发明提供了一种柔性基板的剥离方法，包括：In order to solve the above technical problems, the present invention provides a method for peeling off a flexible substrate, comprising:
A、在硬质基板上形成非结晶状的离型层，该离型层由受热后可形成片状结晶的材料制成；A. An amorphous release layer is formed on the hard substrate, and the release layer is made of a material that can form flaky crystals after being heated;
B、在所述离型层上形成所述柔性基板；B. forming the flexible substrate on the release layer;
C、在所述柔性基板上制作电子或光学器件；C, making electronic or optical devices on the flexible substrate;
D、对所述离型层加热，使所述离型层转变为容易剥离的层状结构，将所述柔性基板从硬质基板上剥离。D. Heating the release layer to transform the release layer into a layered structure that is easy to peel off, and peel the flexible substrate from the hard substrate.
进一步地，所述受热后可形成片状结晶的材料为过渡金属硫族化合物。Further, the material that can form flaky crystals after being heated is a transition metal chalcogenide.
进一步地，所述受热后可形成片状结晶的材料选自WS2、WSe2、MoS2、MoSe2、TiS2、TiSe2、SnS2、Bi2Te3、Sb2Te3、TaS2、TaSe2中的一种或任意组合。Further, the material that can form flaky crystals after being heated is selected from WS 2 , WSe 2 , MoS 2 , MoSe 2 , TiS 2 , TiSe 2 , SnS 2 , Bi 2 Te 3 , Sb 2 Te 3 , TaS 2 , One or any combination of TaSe 2 .
进一步地，所述步骤A之前还包括：Further, before the step A, it also includes:
在所述硬质基板上形成导电层；forming a conductive layer on the hard substrate;
所述步骤A中，所述离型层形成在该导电层上；In the step A, the release layer is formed on the conductive layer;
所述步骤D中，通过给所述导电层通电流使导电层发热，利用所述导电层的热量来加热所述离型层。In the step D, the conductive layer is heated by passing an electric current through the conductive layer, and the heat of the conductive layer is used to heat the release layer.
进一步地，所述步骤D中，通过紫外线照射、激光照射或超声波激励的方式对所述离型层加热。Further, in the step D, the release layer is heated by means of ultraviolet irradiation, laser irradiation or ultrasonic excitation.
进一步地，所述步骤A中，采用溅射法、化学气相沉积法、湿化学法、溶胶-凝胶法或喷墨打印法在所述硬质基板上形成非结晶状的离型层。Further, in the step A, an amorphous release layer is formed on the hard substrate by sputtering, chemical vapor deposition, wet chemical, sol-gel or inkjet printing.
进一步地，所述离型层的厚度为10~1000 nm。Further, the thickness of the release layer is 10-1000 nm.
进一步地，所述柔性基板的材料选自聚酰亚胺、聚苯乙烯、聚对苯二甲酸乙二醇酯、聚对二甲苯、聚醚砜、聚萘二甲酸乙二醇酯中的一种。Further, the material of the flexible substrate is selected from one of polyimide, polystyrene, polyethylene terephthalate, parylene, polyethersulfone, and polyethylene naphthalate kind.
进一步地，所述步骤B中，通过涂布-固化法、喷墨打印法或流延法在所述离型层上形成所述柔性基板。Further, in the step B, the flexible substrate is formed on the release layer by a coating-curing method, an inkjet printing method or a casting method.
进一步地，所述柔性基板的厚度为10~1000 μm。Further, the thickness of the flexible substrate is 10-1000 μm.
本发明的柔性基板的剥离方法，利用了离型层材料在受热后会形成片状结晶的特性，在柔性基板上制作完电子或光学器件后，通过对离型层加热，使离型层转变为容易剥离的层状结构，从而可以非常容易方便地将柔性基板从硬质基板上剥离。本发明不需要大型设备，实现起来简单、操作方便。The stripping method of the flexible substrate of the present invention utilizes the characteristic that the release layer material will form flaky crystals after being heated. After the electronic or optical device is made on the flexible substrate, the release layer is transformed by heating the release layer. It is a layered structure that is easy to peel off, so that the flexible substrate can be peeled off from the hard substrate very easily and conveniently. The invention does not need large-scale equipment, and is simple to realize and convenient to operate.
附图说明Description of drawings
图1是本发明的柔性基板的剥离方法的流程图。FIG. 1 is a flow chart of the peeling method of the flexible substrate of the present invention.
图2是本发明的柔性基板的剥离方法的示意图。Fig. 2 is a schematic diagram of the peeling method of the flexible substrate of the present invention.
图3是本发明的柔性基板的剥离方法第一实施例的示意图。FIG. 3 is a schematic diagram of the first embodiment of the peeling method of the flexible substrate of the present invention.
图4是本发明的柔性基板的剥离方法第二实施例的示意图。FIG. 4 is a schematic diagram of a second embodiment of the peeling method of the flexible substrate of the present invention.
具体实施方式Detailed ways
下面结合附图和具体实施例对本发明作进一步说明，以使本领域的技术人员可以更好的理解本发明并能予以实施，但所举实施例不作为对本发明的限定。The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the examples given are not intended to limit the present invention.
如图1所示，本发明的柔性基板的剥离方法，包括：As shown in Figure 1, the stripping method of the flexible substrate of the present invention includes:
步骤1：在硬质基板上形成非结晶状的离型层，该离型层由受热后可形成片状结晶的材料制成；Step 1: Form an amorphous release layer on the hard substrate, the release layer is made of a material that can form flaky crystals after being heated;
步骤2：在所述离型层上形成所述柔性基板；Step 2: forming the flexible substrate on the release layer;
步骤3：在所述柔性基板上制作电子或光学器件；Step 3: making electronic or optical devices on the flexible substrate;
步骤4：对所述离型层加热，使所述离型层转变为容易剥离的层状结构，将所述柔性基板从硬质基板上剥离。Step 4: heating the release layer to transform the release layer into an easily peelable layered structure, and peel the flexible substrate from the hard substrate.
其中，形成离型层的具有受热后可形成片状结晶特性的材料为过渡金属硫族化合物，例如可以是WS2、WSe2、MoS2、MoSe2、TiS2、TiSe2、SnS2、Bi2Te3、Sb2Te3、TaS2、TaSe2中的一种或任意组合。Among them, the materials that form the release layer and can form flaky crystals after heating are transition metal chalcogenides, such as WS 2 , WSe 2 , MoS 2 , MoSe 2 , TiS 2 , TiSe 2 , SnS 2 , Bi One or any combination of 2 Te 3 , Sb 2 Te 3 , TaS 2 , TaSe 2 .
优选地，在步骤1之前还包括：在硬质基板上形成导电层，该导电层一般为金属层。在步骤1中，离型层形成在该导电层上；而在步骤4中，通过给导电层通上电流使导电层发热，利用导电层的热量来加热所述离型层。该方法利用电流先将导电层加热，然后利用导电层的热量加热离型层，可以使加热十均匀，且加热迅速，在热量传递到柔性基板前即可完成离型层的结晶，因而不会损坏柔性基板及其上的光学或电子器件。Preferably, before step 1, it also includes: forming a conductive layer on the hard substrate, and the conductive layer is generally a metal layer. In step 1, the release layer is formed on the conductive layer; and in step 4, the conductive layer is heated by applying current to the conductive layer, and the heat of the conductive layer is used to heat the release layer. This method uses the current to heat the conductive layer first, and then uses the heat of the conductive layer to heat the release layer, which can make the heating very uniform and rapid, and the crystallization of the release layer can be completed before the heat is transferred to the flexible substrate, so it will not Damage to flexible substrates and optical or electronic devices on them.
另外，也可以通过紫外线或激光照射离型层的方式对离型层加热，或者采用烘烤的方式加热离型层。离型层的厚度优先为10~1000 nm，柔性基板的厚度优选为10~1000 μm。In addition, the release layer can also be heated by irradiating the release layer with ultraviolet rays or laser light, or heated by baking. The thickness of the release layer is preferably 10-1000 nm, and the thickness of the flexible substrate is preferably 10-1000 μm.
具体地如图2所示，硬质基板101的材质为玻璃或镀有其他膜层的玻璃，在硬质基板101上形成非晶的过渡金属硫族化合物离型层102，例如WS2、WSe2、MoS2、MoSe2、TiS2、TiSe2、SnS2、Bi2Te3、Sb2Te3、TaS2或TaSe2等其中之一，也可以是这些材料的任意组合。离型层的厚度优选为10-1000 nm，而形成方法可以为但不限于溅射法、化学气相沉积法（CVD）、湿化学法、溶胶-凝胶法、喷墨打印法等。然后在离型层102上形成柔性基板103，柔性基板的厚度优选为10-1000 μm，其材质可以是但不限于聚酰亚胺、聚苯乙烯、聚对苯二甲酸乙二醇酯、聚对二甲苯、聚醚砜、聚萘二甲酸乙二醇酯等，制备方法可以是但不限于涂布-固化法、喷墨打印法、流延法等。在柔性基板上再制备光学器件或电子器件104。光学器件或电子器件104制备完毕后，给离型层102施加能量，使其温度超过其形成层状结构的相变温度，这样，非晶的离型层102转变为容易剥离的层状结构，再施加外力进行剥离，使离型层102从中断裂，形成102-1和102-2两部分。Specifically as shown in FIG. 2 , the hard substrate 101 is made of glass or glass coated with other film layers, and an amorphous transition metal chalcogenide release layer 102 is formed on the hard substrate 101, such as WS 2 , WSe 2 , one of MoS 2 , MoSe 2 , TiS 2 , TiSe 2 , SnS 2 , Bi 2 Te 3 , Sb 2 Te 3 , TaS 2 , or TaSe 2 , or any combination of these materials. The thickness of the release layer is preferably 10-1000 nm, and the formation method may be, but not limited to, sputtering, chemical vapor deposition (CVD), wet chemical, sol-gel, inkjet printing, etc. Then form a flexible substrate 103 on the release layer 102, the thickness of the flexible substrate is preferably 10-1000 μm, and its material can be but not limited to polyimide, polystyrene, polyethylene terephthalate, polyethylene For p-xylene, polyethersulfone, polyethylene naphthalate, etc., the preparation method may be, but not limited to, coating-curing method, inkjet printing method, casting method, etc. Optical or electronic devices 104 are then fabricated on the flexible substrate. After the optical device or electronic device 104 is prepared, energy is applied to the release layer 102 to make its temperature exceed the phase transition temperature of its layered structure, so that the amorphous release layer 102 changes into a layered structure that is easy to peel off. Then apply an external force to peel off, so that the release layer 102 is broken to form two parts 102-1 and 102-2.
本发明利用了离型层材料在受热后会形成片状结晶的特性，在柔性基板上制作完电子或光学器件后，通过对离型层加热，使离型层转变为容易剥离的层状结构，从而可以非常容易方便地将柔性基板从硬质基板上剥离。本发明不需要大型设备，实现起来简单、操作方便。The invention utilizes the property that the material of the release layer will form flaky crystals after being heated, and after the electronic or optical device is fabricated on the flexible substrate, the release layer is transformed into a layered structure that is easy to peel off by heating the release layer , so that the flexible substrate can be peeled off from the rigid substrate very easily and conveniently. The invention does not need large-scale equipment, and is simple to realize and convenient to operate.
如图3所示的实施例。在本实施例中，先在玻璃基板201上形成一层导电层202，导电层的材料可以为但不限于Mo、Cr、Ta、Ti、ITO等，在此优选Mo；制备方法可以为但不限于溅射法、电镀法等，在此优选为溅射法；导电层厚度为100-5000 nm，在此优选为1000 nm。在导电层202上形成一层过渡金属硫族化合物离型层203，在此优选材料MoS2，制备方法在此优选溅射法，于硫化氢蒸汽环境中形成非晶薄膜结构的离型层203，厚度优选为500 nm。在离型层203之上用涂布的方式形成聚酰亚胺柔性基板204，厚度为500 μm。在柔性基板204上形成AMOLED（有源矩阵有机发光二极管）显示器件205，其形成方法可采用现有技术。接下来，在导电层202上施加交变电流，使导电层202温度超过300℃，引发紧邻的离型层203发生结晶形成层状结构，然后施加外力将离型层203剥离为203-1与203-2，从而将柔性基板204及柔性AMOLED显示器件 205分离出来。Example shown in Figure 3. In this embodiment, a layer of conductive layer 202 is first formed on the glass substrate 201. The material of the conductive layer can be but not limited to Mo, Cr, Ta, Ti, ITO, etc. Mo is preferred here; the preparation method can be but not limited to It is limited to sputtering method, electroplating method, etc., preferably sputtering method here; the thickness of the conductive layer is 100-5000 nm, preferably 1000 nm here. Form a layer of transition metal chalcogenide release layer 203 on the conductive layer 202. The preferred material here is MoS 2 . The preparation method is preferably sputtering, and the release layer 203 with an amorphous film structure is formed in a hydrogen sulfide vapor environment. , the thickness is preferably 500 nm. A polyimide flexible substrate 204 is formed on the release layer 203 by coating, with a thickness of 500 μm. An AMOLED (Active Matrix Organic Light Emitting Diode) display device 205 is formed on the flexible substrate 204 , and the forming method may adopt the existing technology. Next, an alternating current is applied on the conductive layer 202, so that the temperature of the conductive layer 202 exceeds 300°C, causing the adjacent release layer 203 to crystallize to form a layered structure, and then an external force is applied to peel the release layer 203 into 203-1 and 203-2, so as to separate the flexible substrate 204 and the flexible AMOLED display device 205.
本实施例通过对导电层上施加交变电流，使导电层发热，然后再加热离型层，使离型层结晶。本实例只需要很低的能量即可使离型层结晶实现剥离。并且由于本实施例中是间接加热，而不是直接对离型层加热，从而可以使离型层受热更为均匀，避免因受热不均匀产生的录离不完全，提高了产品合格率。In this embodiment, an alternating current is applied to the conductive layer to make the conductive layer generate heat, and then the release layer is heated to crystallize the release layer. In this example, only very low energy is needed to crystallize the release layer to achieve peeling. And because in this embodiment, indirect heating is used instead of directly heating the release layer, the release layer can be heated more evenly, avoiding incomplete recording and separation due to uneven heating, and improving the product qualification rate.
如图4所示实施例。在本实施例中，在玻璃基板301上形成过渡金属硫族化合物非晶离型层302，在此优选材料WS2，优选湿化学法进行沉积，离型层302厚度优选为300 nm。接下来，采用旋涂与紫外光固化的方式，在离型层302之上形成柔性基板303。柔性基板303的材料为聚对二甲苯，厚度为500 μm。在柔性基板303上形成电泳显示（EPD）器件304，其形成方法可采用现有技术。之后，从玻璃基板301的方向照射270 nm的紫外光305，使离型层302吸收紫外光305后温度升高，从而发生相变，形成层状结构，然后施加外力将离型层302剥离为302-1与302-2，从而将柔性基板303及电泳显示器件304分离出来。Example shown in Figure 4. In this embodiment, a transition metal chalcogenide amorphous release layer 302 is formed on the glass substrate 301, preferably material WS 2 , preferably deposited by wet chemical method, and the thickness of the release layer 302 is preferably 300 nm. Next, a flexible substrate 303 is formed on the release layer 302 by means of spin coating and ultraviolet curing. The material of the flexible substrate 303 is parylene with a thickness of 500 μm. An electrophoretic display (EPD) device 304 is formed on the flexible substrate 303 , and the forming method may adopt the existing technology. Afterwards, 270 nm ultraviolet light 305 is irradiated from the direction of the glass substrate 301, so that the release layer 302 absorbs the ultraviolet light 305 and the temperature rises, thereby causing a phase change to form a layered structure, and then applying external force to peel the release layer 302 into 302-1 and 302-2, so as to separate the flexible substrate 303 and the electrophoretic display device 304.
本实施例是通过紫外光照射使离型层受热而发生相变的。通过大面积的紫外线光源，可以对整个玻璃基板进行均匀照射，同样可以使离型层均匀受热，从而保证剥离效果，提高产品的合格率。In this embodiment, the phase change occurs by heating the release layer through ultraviolet light irradiation. Through the large-area ultraviolet light source, the entire glass substrate can be uniformly irradiated, and the release layer can also be heated evenly, so as to ensure the peeling effect and improve the qualified rate of the product.
另外，离型层也可以采用MoS2等材料制作。而在剥离时，也可使用激光照射使MoS2相变，然后剥离。由于MoS2相变温度较低，因此对激光功率要求不高。还可以在玻璃基板上直接形成非晶TiS2材料的离型层，在形成柔性基板和显示器件后，用该材料最强吸收峰对应的高强度紫外光照射，并伴随超声，使柔性基板和显示器件剥离。由于过渡金属硫族化合物有很多种选择，而各种材料的相变温度和光学吸收谱各不相同，因此可以为各种应用提供不同的选择。In addition, the release layer can also be made of materials such as MoS 2 . When peeling off, it is also possible to use laser irradiation to make MoS 2 phase change, and then peel off. Due to the low phase transition temperature of MoS 2 , the requirement for laser power is not high. It is also possible to directly form a release layer of amorphous TiS2 material on the glass substrate. After forming the flexible substrate and display device, irradiate with high-intensity ultraviolet light corresponding to the strongest absorption peak of the material, accompanied by ultrasound, to make the flexible substrate and the display device Display device peeled off. Since there are many choices of transition metal chalcogenides, and the phase transition temperature and optical absorption spectrum of each material are different, it can provide different choices for various applications.
以上所述实施例仅是为充分说明本发明而所举的较佳的实施例，本发明的保护范围不限于此。本技术领域的技术人员在本发明基础上所作的等同替代或变换，均在本发明的保护范围之内。本发明的保护范围以权利要求书为准。The above-mentioned embodiments are only preferred embodiments for fully illustrating the present invention, and the protection scope of the present invention is not limited thereto. Equivalent substitutions or transformations made by those skilled in the art on the basis of the present invention are all within the protection scope of the present invention. The protection scope of the present invention shall be determined by the claims.
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