CN103572255B - Metal chemical vapor deposition equipment and reaction chamber thereof - Google Patents
Metal chemical vapor deposition equipment and reaction chamber thereof Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 61
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 47
- 239000002184 metal Substances 0.000 title claims abstract description 12
- 239000000112 cooling gas Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 230000017525 heat dissipation Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 10
- 230000004308 accommodation Effects 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 9
- 230000006698 induction Effects 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
一种化学气相沉积反应腔室以及具有该反应腔室的金属化学气相沉积设备，所述化学气相沉积反应腔室包括进气系统、感应线圈、排气系统和托盘，所述感应线圈设置在反应腔室的外部，用于加热反应腔室内部的托盘，其特征在于，所述托盘具有容纳腔，所述容纳腔内设置有散热器。根据本发明的化学气相沉积反应腔室和金属化学气相沉积设备，在托盘的容纳腔内设有散热器对托盘进行散热，增强了托盘的散热效率，使托盘快速降温，提高了工作效率，而且无需向反应腔室内通入冷却气体，进而避免了反应腔室内产生颗粒而污染基片。由于散热器容纳在密闭的容纳腔内，因此散热器不会影响反应腔室内的工艺气体的纯度，能够更好的保证化学气相沉积的工艺效果。
A chemical vapor deposition reaction chamber and metal chemical vapor deposition equipment with the reaction chamber, the chemical vapor deposition reaction chamber includes an air intake system, an induction coil, an exhaust system and a tray, and the induction coil is arranged in the reaction chamber The outside of the chamber is used for heating the tray inside the reaction chamber, wherein the tray has an accommodating cavity, and a radiator is arranged in the accommodating cavity. According to the chemical vapor deposition reaction chamber and metal chemical vapor deposition equipment of the present invention, a radiator is provided in the accommodation chamber of the tray to dissipate heat from the tray, which enhances the heat dissipation efficiency of the tray, rapidly cools down the tray, and improves work efficiency, and There is no need to feed cooling gas into the reaction chamber, thereby preventing particles from being generated in the reaction chamber from contaminating the substrate. Since the radiator is accommodated in the airtight accommodation chamber, the radiator will not affect the purity of the process gas in the reaction chamber, which can better ensure the process effect of chemical vapor deposition.
Description
技术领域 technical field
本发明涉及一种化学气相沉积反应腔室以及具有该腔室的金属化学气相沉积设备。The invention relates to a chemical vapor deposition reaction chamber and metal chemical vapor deposition equipment with the chamber.
背景技术 Background technique
金属有机化学气相沉积（MOCVD）是目前唯一能制备氮化物高亮度LED外延材料并用于规模生产的生长技术。该技术生长速率适中，可以比较精确地控制膜厚，特别适合于LED（发光二极管,LightEmittingDiode）的大规模工业化生产。MOCVD的原理是有机金属气体与其他工艺气体进入反应室后，在被加热到高温的衬底片表面发生高温化学反应，生成的产物沉积在衬底表面，得到各种结构的多层LED外延片。MOCVD设备通常采用感应加热，在工艺过程中，生长不同的膜层，衬底所需的加热温度有所不同，特别是在生长多量子阱工艺中需要周期性的升降温，为此，传统上采用氮气直接对托盘表面进行降温。Metal-organic chemical vapor deposition (MOCVD) is currently the only growth technology that can prepare nitride high-brightness LED epitaxial materials and use them in large-scale production. The growth rate of this technology is moderate, and the film thickness can be controlled more accurately, which is especially suitable for the large-scale industrial production of LED (Light Emitting Diode, Light Emitting Diode). The principle of MOCVD is that after organic metal gas and other process gases enter the reaction chamber, a high-temperature chemical reaction occurs on the surface of the substrate heated to a high temperature, and the generated products are deposited on the surface of the substrate to obtain multilayer LED epitaxial wafers with various structures. MOCVD equipment usually uses induction heating. During the process, different film layers are grown, and the heating temperature required for the substrate is different. Especially in the process of growing multiple quantum wells, periodic heating and cooling is required. For this reason, traditionally Nitrogen is used to directly cool the surface of the tray.
但是，氮气通过腔室时容易产生颗粒，污染衬底表面，严重影响工艺结果，且要达到降温的目的，需要耗费大量氮气，增加了成本。However, when nitrogen passes through the chamber, it is easy to generate particles, pollute the surface of the substrate, and seriously affect the process results, and to achieve the purpose of cooling, a large amount of nitrogen is needed, which increases the cost.
发明内容 Contents of the invention
本发明旨在至少在一定程度上解决上述技术问题之一或至少提供一种有用的商业选择。为此，本发明的一个目的在于提出一种散热效果好且可提高化学气相沉积的工艺效果的化学气相沉积反应腔室。The present invention aims at solving one of the above technical problems at least to a certain extent or at least providing a useful commercial choice. Therefore, an object of the present invention is to provide a chemical vapor deposition reaction chamber that has a good heat dissipation effect and can improve the process effect of chemical vapor deposition.
本发明的第二个目的在于提出具有上述反应腔室的金属化学气相沉积设备。A second object of the present invention is to propose a metal chemical vapor deposition apparatus having the above reaction chamber.
根据本发明实施例的化学气相沉积反应腔室，包括进气系统、感应线圈、排气系统和托盘，所述感应线圈设置在反应腔室的外部，用于加热反应腔室内部的托盘，所述托盘具有容纳腔，所述容纳腔内设置有散热器。A chemical vapor deposition reaction chamber according to an embodiment of the present invention includes an air intake system, an induction coil, an exhaust system, and a tray. The induction coil is arranged outside the reaction chamber for heating the tray inside the reaction chamber. The tray has an accommodating cavity, and a radiator is arranged in the accommodating cavity.
根据本发明实施例的化学气相沉积反应腔室，在托盘的容纳腔内设有散热器对托盘进行散热。由此，增强了托盘的散热效率，使托盘快速降温，提高了化学气相沉积反应腔室的工作效率，而且无需向反应腔室内通入冷却气体，进而避免了反应腔室内产生颗粒而污染基片。由于散热器容纳在密闭的容纳腔内，因此散热器不会影响反应腔室内的工艺气体的纯度，因此能够更好的保证化学气相沉积的工艺效果。According to the chemical vapor deposition reaction chamber of the embodiment of the present invention, a radiator is provided in the accommodating cavity of the tray to dissipate heat from the tray. As a result, the heat dissipation efficiency of the tray is enhanced, the temperature of the tray is rapidly cooled, and the working efficiency of the chemical vapor deposition reaction chamber is improved, and there is no need to feed cooling gas into the reaction chamber, thereby avoiding the generation of particles in the reaction chamber and contaminating the substrate . Since the heat sink is housed in the airtight chamber, the heat sink will not affect the purity of the process gas in the reaction chamber, so the process effect of chemical vapor deposition can be better guaranteed.
根据本发明的一个实施例，所述进气系统由工艺气体进气系统和冷却气体进气系统构成，所述排气系统由工艺气体排气系统和冷却气体排气通道构成，所述冷却气体进气系统与所述容纳腔相连，用于向所述容纳腔内输送冷却气体，所述冷却气体通过与容纳腔相连的冷却气体排气通道排出容纳腔。According to an embodiment of the present invention, the intake system is composed of a process gas intake system and a cooling gas intake system, the exhaust system is composed of a process gas exhaust system and a cooling gas exhaust channel, and the cooling gas The air intake system is connected with the accommodation cavity, and is used for delivering cooling gas into the accommodation cavity, and the cooling gas is discharged out of the accommodation cavity through a cooling gas exhaust channel connected with the accommodation cavity.
根据本发明的一个实施例，所述托盘包括第一托盘和第二托盘，所述第一托盘的下表面上设有第一凹槽且所述第二托盘的上表面设有第二凹槽，所述第一托盘安装在所述第二托盘上且所述第一凹槽和第二凹槽相对以形成所述容纳腔。According to an embodiment of the present invention, the tray includes a first tray and a second tray, the first tray is provided with a first groove on the lower surface and the second tray is provided with a second groove on the upper surface , the first tray is installed on the second tray and the first groove is opposite to the second groove to form the accommodation cavity.
根据本发明的一个实施例，所述散热器包括圆柱状本体和安装在所述圆柱状本体内的散热片。According to an embodiment of the present invention, the heat sink includes a cylindrical body and cooling fins installed in the cylindrical body.
根据本发明的一个实施例，所述散热片沿径向方向具有翅片。According to an embodiment of the present invention, the cooling fins have fins in a radial direction.
根据本发明的一个实施例，所述散热片为多个，所述散热片分别沿所述托盘的的径向延伸且沿所述托盘的周向间隔设置。According to an embodiment of the present invention, there are a plurality of cooling fins, and the cooling fins respectively extend along the radial direction of the tray and are arranged at intervals along the circumferential direction of the tray.
根据本发明的一个实施例，每个所述散热片上设有多个翅片，所述多个翅片沿所述托盘的径向间隔设置且所述多个翅片的尺寸沿所述托盘的径向从外向内逐渐减小。According to an embodiment of the present invention, each of the cooling fins is provided with a plurality of fins, the plurality of fins are arranged at intervals along the radial direction of the tray, and the size of the plurality of fins is along the radial direction of the tray. The radial direction gradually decreases from the outside to the inside.
根据本发明的一个实施例，所述冷却气体为压缩空气。According to one embodiment of the present invention, the cooling gas is compressed air.
根据本发明的一个实施例，所述托盘为多个且所述多个托盘沿上下方向间隔设置成多层。According to an embodiment of the present invention, there are a plurality of trays, and the plurality of trays are arranged at intervals in multiple layers along the vertical direction.
根据本发明实施例的金属化学气相沉积设备包括根据本发明前述实施例所述的化学气相沉积反应腔室。The metal chemical vapor deposition equipment according to the embodiment of the present invention includes the chemical vapor deposition reaction chamber according to the foregoing embodiments of the present invention.
根据本发明实施例的金属化学气相沉积设备，托盘的散热效率高，托盘快速降温，提高了工作效率，而且无需通入冷却气体，例如氮气，避免了产生颗粒而污染基片。由于散热器容纳在密闭的容纳腔内，因此散热器不会影响反应腔室内的工艺气体的纯度，因此能够更好的保证化学气相沉积的工艺效果。According to the metal chemical vapor deposition equipment of the embodiment of the present invention, the heat dissipation efficiency of the tray is high, and the temperature of the tray is quickly lowered, which improves the work efficiency, and does not need to pass cooling gas, such as nitrogen, to avoid the generation of particles and contamination of the substrate. Since the heat sink is housed in the airtight chamber, the heat sink will not affect the purity of the process gas in the reaction chamber, so the process effect of chemical vapor deposition can be better guaranteed.
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
附图说明 Description of drawings
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：The above and/or additional aspects and advantages of the present invention will become apparent and comprehensible from the description of the embodiments in conjunction with the following drawings, wherein:
图1是根据本发明的一个实施例的化学气相沉积反应腔室的示意图；1 is a schematic diagram of a chemical vapor deposition reaction chamber according to an embodiment of the present invention;
图2是根据本发明的另一实施例的化学气相沉积反应腔室的示意图；2 is a schematic diagram of a chemical vapor deposition reaction chamber according to another embodiment of the present invention;
图3是根据本发明再一个实施例的化学气相沉积反应腔室的散热器和托盘的示意图；3 is a schematic diagram of a radiator and a tray of a chemical vapor deposition reaction chamber according to another embodiment of the present invention;
图4是根据本发明的一个实施例图的化学气相沉积反应腔室的散热器的示意图；和4 is a schematic diagram of a radiator of a chemical vapor deposition reaction chamber according to an embodiment of the present invention; and
图5是沿图3中的线A-A的剖面示意图。Fig. 5 is a schematic cross-sectional view along line A-A in Fig. 3 .
具体实施方式 detailed description
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, therefore It should not be construed as a limitation of the present invention.
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。In the present invention, unless otherwise clearly specified and limited, terms such as "installation", "connection", "connection" and "fixation" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , or integrally connected; it may be mechanically connected or electrically connected; it may be directly connected or indirectly connected through an intermediary, and it may be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention according to specific situations.
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。In the present invention, unless otherwise clearly specified and limited, a first feature being "on" or "under" a second feature may include direct contact between the first and second features, and may also include the first and second features Not in direct contact but through another characteristic contact between them. Moreover, "above", "above" and "above" the first feature on the second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. "Below", "under" and "under" the first feature to the second feature include that the first feature is directly below and obliquely below the second feature, or simply means that the first feature is less horizontally than the second feature.
下面参照附图详细描述根据本发明实施例的化学气相沉积反应腔室。A chemical vapor deposition reaction chamber according to an embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
如图1所示，根据本发明实施例的化学气相沉积反应腔室，包括进气系统、感应线圈10、排气系统和托盘20。其中，感应线圈10环绕地设置在反应腔室的外部，用于加热反应腔室内部的托盘20。托盘20具有容纳腔21，容纳腔21内设置有散热器30。As shown in FIG. 1 , the chemical vapor deposition reaction chamber according to the embodiment of the present invention includes an inlet system, an induction coil 10 , an exhaust system and a tray 20 . Wherein, the induction coil 10 is arranged around the outside of the reaction chamber for heating the tray 20 inside the reaction chamber. The tray 20 has an accommodating cavity 21 , and a radiator 30 is disposed in the accommodating cavity 21 .
在图1所示的实施例中，反应腔室内设置了单层托盘20。可以理解的是，反应腔室内可以设置多层托盘20，下面将会详细描述。In the embodiment shown in FIG. 1 , a single-layer tray 20 is arranged in the reaction chamber. It can be understood that a multi-layer tray 20 can be arranged in the reaction chamber, which will be described in detail below.
根据本发明实施例的化学气相沉积反应腔室，在托盘20的容纳腔21内设有散热器30对托盘20进行散热。由此，采用散热器30对托盘20进行散热，增强了托盘20的散热效率，使托盘20的温度可快速降温，提高了化学气相沉积反应腔室的工作效率，无需向反应腔室内通入降温用气体，进而避免了反应腔室内产生颗粒而污染基片。由于散热器30容纳在密闭的容纳腔21内，因此散热不会影响反应腔室内的工艺气体的纯度因此能更好的保证化学气相沉积的工艺效果。According to the chemical vapor deposition reaction chamber of the embodiment of the present invention, a radiator 30 is provided in the accommodating chamber 21 of the tray 20 to dissipate heat from the tray 20 . As a result, the radiator 30 is used to dissipate heat from the tray 20, which enhances the heat dissipation efficiency of the tray 20, enables the temperature of the tray 20 to be rapidly lowered, improves the working efficiency of the chemical vapor deposition reaction chamber, and eliminates the need for cooling the reaction chamber. Gas is used, thereby avoiding the generation of particles in the reaction chamber and contaminating the substrate. Since the radiator 30 is housed in the airtight chamber 21 , the heat dissipation will not affect the purity of the process gas in the reaction chamber, so the process effect of chemical vapor deposition can be better ensured.
根据本发明的一个实施例，如图1和图2所示，进气系统由工艺气体进气系统41和冷却气体进气系统42构成，具体地，冷却气体进气系统42包括设在反应腔室内的冷却气体进气管，冷却气体进气管上形成有与托盘20的容纳腔21相连通的通孔，冷却气体进气系统42用于向托盘20的容纳腔21内输送冷却气体。可以理解的是，可以采用本领域内已知的其他形式的进气系统，这里不再详细描述。According to one embodiment of the present invention, as shown in Figure 1 and Figure 2, the intake system is composed of a process gas intake system 41 and a cooling gas intake system 42, specifically, the cooling gas intake system 42 includes The cooling gas inlet pipe in the room is formed with a through hole communicating with the accommodating chamber 21 of the tray 20 , and the cooling gas inlet system 42 is used to deliver cooling gas into the accommodating chamber 21 of the tray 20 . It can be understood that other forms of air intake systems known in the art can be used, and will not be described in detail here.
排气系统由工艺气体排气系统51和冷却气体排气通道52构成，具体地，冷却气体排气通道52包括设在反应腔室内的冷却气体排气管，冷却气体排气管上形成有与托盘20的容纳腔21连通的通孔，以使容纳腔21内完成换热的冷却气体通过冷却气体排气管排出容纳腔21。可以理解的是，可以采用本领域内已知的其他形式的排气系统，这里不再详细描述。Exhaust system is made up of process gas exhaust system 51 and cooling gas exhaust passage 52, specifically, cooling gas exhaust passage 52 comprises the cooling gas exhaust pipe that is located in the reaction chamber, and the cooling gas exhaust pipe is formed with The receiving chamber 21 of the tray 20 communicates with the through hole so that the cooling gas that has completed heat exchange in the receiving chamber 21 is discharged from the receiving chamber 21 through the cooling gas exhaust pipe. It can be understood that other forms of exhaust systems known in the art can be used, and will not be described in detail here.
进一步地，根据本发明的一个实施例，冷却气体可以为压缩空气。由此，冷却气体进气系统42和冷却气体排气通道52相配合，使托盘20的容纳腔21内具有流动的冷却气体，便于冷却气体与托盘20进行热量交换。且冷却空气可带走散热器30上的热量，增强了散热器30的散热效果。采用压缩空气作为冷却气体，不仅能使压缩空气膨胀时快速对散热器及托盘制冷，提高了散热器的散热性能，而且降低了成本。Further, according to an embodiment of the present invention, the cooling gas may be compressed air. Thus, the cooling gas inlet system 42 cooperates with the cooling gas exhaust channel 52 to make the cooling gas flow in the accommodating chamber 21 of the tray 20 , facilitating heat exchange between the cooling gas and the tray 20 . And the cooling air can take away the heat on the radiator 30 , which enhances the heat dissipation effect of the radiator 30 . The use of compressed air as the cooling gas not only enables the compressed air to rapidly cool the radiator and the tray when the compressed air expands, improves the heat dissipation performance of the radiator, but also reduces the cost.
根据本发明的一个实施例，如图3所示，托盘20包括第一托盘22和第二托盘23。第一托盘22的下表面（即如图3所示的下表面）上设有第一凹槽（未示出），第二托盘23的上表面（即如图3所示的上表面）设有第二凹槽（未示出）。第一托盘22安装在第二托盘23上，且所述第一凹槽和第二凹槽相对以形成容纳腔21。由此，使托盘20结构简单，加工和装配方便且便于安装散热器30。According to an embodiment of the present invention, as shown in FIG. 3 , the tray 20 includes a first tray 22 and a second tray 23 . The lower surface of the first tray 22 (i.e. the lower surface as shown in Figure 3) is provided with a first groove (not shown), and the upper surface of the second tray 23 (i.e. the upper surface as shown in Figure 3) is provided with There is a second groove (not shown). The first tray 22 is installed on the second tray 23 , and the first groove and the second groove are opposite to form the receiving cavity 21 . Therefore, the structure of the tray 20 is simple, the processing and assembly are convenient, and the installation of the radiator 30 is convenient.
根据本发明的一个实施例，如图3至图5所示，散热器30包括圆柱状本体31和安装在圆柱状本体31内的散热片32。进一步地，散热片32为多个，散热片32分别沿托盘20的径向延伸且沿托盘20的周向间隔设置，即如图5所示，由此，增加了散热器30的散热面积，且便于冷却气体流动，提高了散热器30的散热效果。According to an embodiment of the present invention, as shown in FIGS. 3 to 5 , the radiator 30 includes a cylindrical body 31 and cooling fins 32 installed in the cylindrical body 31 . Further, there are a plurality of cooling fins 32, and the cooling fins 32 respectively extend in the radial direction of the tray 20 and are arranged at intervals along the circumferential direction of the tray 20, as shown in FIG. 5, thereby increasing the heat dissipation area of the radiator 30, Moreover, the flow of the cooling gas is facilitated, and the heat dissipation effect of the radiator 30 is improved.
根据本发明的一个实施例，如图5所示，散热片32沿径向方向具有翅片321。每个散热片32上设有多个翅片321。多个翅片321沿托盘32的径向间隔设置，多个翅片321的尺寸沿托盘20的径向从外向内逐渐减小。由此，进一步的增加了散热器30的散热面积，提高了散热器30的散热效果。According to an embodiment of the present invention, as shown in FIG. 5 , the heat sink 32 has fins 321 along the radial direction. Each heat sink 32 is provided with a plurality of fins 321 . A plurality of fins 321 are arranged at intervals along the radial direction of the tray 32 , and the size of the plurality of fins 321 gradually decreases from outside to inside along the radial direction of the tray 20 . Thus, the heat dissipation area of the radiator 30 is further increased, and the heat dissipation effect of the radiator 30 is improved.
下面参考图2描述根据本发明另一实施例的化学气相沉积反应腔室。A chemical vapor deposition reaction chamber according to another embodiment of the present invention will be described below with reference to FIG. 2 .
如图2所示，在反应腔室内沿上下方向设有多层托盘20，如上所述，每层托盘20内均形成有容纳腔21，且容纳腔内设有散热器30。As shown in FIG. 2 , there are multiple layers of trays 20 along the vertical direction in the reaction chamber. As mentioned above, each layer of trays 20 is formed with a housing chamber 21 and a radiator 30 is provided in the housing chamber.
在本发明的此实施例中，反应腔室内设有沿上下方向延伸的冷却气体进气管，冷却气体进气管上设有与每层托盘20的容纳腔21连通的通孔，以使冷却气体由冷却气体进气管输送进入容纳腔21。反应腔室内还设有冷却气体排气管，冷却气体排气管上形成有分别与每层托盘20的容纳腔21连通的通孔，以使容纳腔21内的冷气通过冷却气体排气管输出容纳腔21。由于在反应腔室内设有多层托盘20，由此，提高了反应腔室的工作效率，降低成本。In this embodiment of the present invention, the reaction chamber is provided with a cooling gas inlet pipe extending up and down, and the cooling gas inlet pipe is provided with a through hole communicating with the accommodating cavity 21 of each tray 20, so that the cooling gas can flow through The cooling gas intake pipe is delivered into the accommodating chamber 21 . A cooling gas exhaust pipe is also provided in the reaction chamber, and the cooling gas exhaust pipe is formed with through holes communicating with the accommodation chamber 21 of each tray 20, so that the cold air in the accommodation chamber 21 is output through the cooling gas exhaust pipe. Accommodating cavity 21 . Since the multi-layer tray 20 is provided in the reaction chamber, the working efficiency of the reaction chamber is improved and the cost is reduced.
根据本发明实施例的金属化学气相沉积设备，包括根据本发明前述任一实施例描述的化学气相沉积反应腔室，根据本发明实施例的金属化学气相沉积设备可以已知的，这里不再详细描述。The metal chemical vapor deposition equipment according to the embodiment of the present invention includes the chemical vapor deposition reaction chamber described in any one of the foregoing embodiments of the present invention. The metal chemical vapor deposition equipment according to the embodiment of the present invention may be known and will not be detailed here. describe.
根据本发明实施例的金属化学气相沉积设备，托盘的散热效率增强，提高了反应腔室的工作效率。而且无需通入冷却气体，例如氮气，避免了产生颗粒而污染基片。由于散热器容纳在密闭的容纳腔内，因此散热器不会影响反应腔室内的工艺气体的纯度，因此能够更好的保证化学气相沉积的工艺效果。According to the metal chemical vapor deposition equipment of the embodiment of the present invention, the heat dissipation efficiency of the tray is enhanced, and the working efficiency of the reaction chamber is improved. Moreover, there is no need to feed cooling gas, such as nitrogen, to avoid the generation of particles and contamination of the substrate. Since the heat sink is housed in the airtight chamber, the heat sink will not affect the purity of the process gas in the reaction chamber, so the process effect of chemical vapor deposition can be better guaranteed.
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。In the description of this specification, descriptions referring to the terms "one embodiment", "some embodiments", "example", "specific examples", or "some examples" mean that specific features described in connection with the embodiment or example , structure, material or characteristic is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在不脱离本发明的原理和宗旨的情况下在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be construed as limitations to the present invention. Variations, modifications, substitutions, and modifications to the above-described embodiments are possible within the scope of the present invention.
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