CN103558717B - A kind of array base palte and preparation method thereof and display device - Google Patents
A kind of array base palte and preparation method thereof and display device Download PDFInfo
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Abstract
Description
技术领域technical field
本发明属于显示技术领域,具体涉及一种阵列基板及其制备方法和包括该阵列基板的显示装置。The invention belongs to the field of display technology, and in particular relates to an array substrate, a preparation method thereof, and a display device including the array substrate.
背景技术Background technique
高级超维场转换技术(ADSDS,ADvancedSuperDimensionSwitch,ShortforADS)通过同一平面内狭缝电极(像素电极)边缘所产生的电场以及狭缝电极层(像素电极层)与板状电极层(公共电极)间产生的电场形成多维电场,使液晶盒内狭缝电极间、电极正上方所有取向液晶分子都能够产生旋转,从而提高了液晶工作效率并增大了透光效率。Advanced super-dimensional field switching technology (ADSDS, ADvancedSuperDimensionSwitch, ShortforADS) through the electric field generated by the edge of the slit electrode (pixel electrode) in the same plane and the generation between the slit electrode layer (pixel electrode layer) and the plate electrode layer (common electrode) The electric field in the liquid crystal cell forms a multi-dimensional electric field, so that all oriented liquid crystal molecules between the slit electrodes in the liquid crystal cell and directly above the electrodes can be rotated, thereby improving the working efficiency of the liquid crystal and increasing the light transmission efficiency.
随着产品分辨率的不断提高,像素的尺寸越来越小,对于像素开口率要求也不断提高,所以黑矩阵宽度尽可能减小;同时由于ADSDS产品的公共电极一般为铟锡氧化物(IndiumTinOxides,简称ITO)制作,其中ITO电阻较高,为了减小电阻-电容(RC)延迟并增加存储电容,在设计公共电极时会尽可能增加公共电极的面积,一般地ITO和数据线会完全重叠设计。With the continuous improvement of product resolution, the size of pixels is getting smaller and smaller, and the requirements for pixel aperture ratio are also increasing, so the width of the black matrix is reduced as much as possible; at the same time, because the common electrode of ADSDS products is generally Indium Tin Oxide (IndiumTinOxides , referred to as ITO), where the ITO resistance is high, in order to reduce the resistance-capacitance (RC) delay and increase the storage capacitance, the area of the common electrode will be increased as much as possible when designing the common electrode. Generally, the ITO and the data line will completely overlap design.
具体的,现有的高分辨率的显示装置如图1所示,包括:阵列基板20、彩膜基板27以及设置在两者之间的液晶层34。其中,彩膜基板27包括平坦层24,在该平坦层24上设置红/绿/蓝亚像素单元23,相邻亚像素单元23之间设有黑矩阵22;阵列基板20通常包括数据线12,设置在阵列基板20上的衬底基板,该衬底基板上设有公共电极14,在公共电极14上方设置绝缘层15,在绝缘层15上方设置像素电极16,像素电极16为狭缝电极,像素电极16间隔设置在各亚像素单元23的对应下方。Specifically, as shown in FIG. 1 , an existing high-resolution display device includes: an array substrate 20 , a color filter substrate 27 and a liquid crystal layer 34 disposed therebetween. Among them, the color filter substrate 27 includes a flat layer 24, on which red/green/blue sub-pixel units 23 are arranged, and a black matrix 22 is arranged between adjacent sub-pixel units 23; the array substrate 20 usually includes data lines 12 , the base substrate disposed on the array substrate 20, the base substrate is provided with a common electrode 14, an insulating layer 15 is disposed above the common electrode 14, and a pixel electrode 16 is disposed above the insulating layer 15, and the pixel electrode 16 is a slit electrode The pixel electrodes 16 are arranged at intervals correspondingly below each sub-pixel unit 23 .
当数据线12通电时,像素电极16和公共电极15之间产生边缘电场32,在电场作用区域内,位于液晶层34的液晶分子31会发生偏转,入射背光11经液晶层34的作用后有出射光21从亚像素单元区域26部位射出(图1中左侧),呈现相应颜色的光束。当无电场作用时,液晶分子31无偏转,无出射光,呈黑态。When the data line 12 is energized, a fringe electric field 32 is generated between the pixel electrode 16 and the common electrode 15, and the liquid crystal molecules 31 located in the liquid crystal layer 34 will be deflected in the region where the electric field acts, and the incident backlight 11 will be activated by the liquid crystal layer 34 The outgoing light 21 is emitted from the sub-pixel unit area 26 (the left side in FIG. 1 ), and presents a light beam of a corresponding color. When there is no electric field, the liquid crystal molecules 31 have no deflection, no outgoing light, and are in a black state.
由于高分辨率产品黑矩阵宽度一般都小于6.0μm,黑矩阵和数据线的重叠宽度较小,如果彩膜基板27和阵列基板20对盒向一侧发生轻微偏移时,如图2所示,像素电极16和公共电极25形成的边缘电场范围会接近甚至超出黑矩阵22另一侧,即液晶层偏转的范围会接近甚至超出黑矩阵22另一侧。当显示装置单独显示红、绿、蓝画面,即对第一个亚像素单元23加载数据电压,相邻亚像素单元23不加载电压,则除第一个亚像素单元23的出射光21以外,在靠近相邻亚像素单元23的黑矩阵一侧会有较轻微的出射光25,因此会导致第一个亚像素单元23的单色出射光(如红)与相邻亚像素单元23的出射单色光(如绿)发生混色(如黄色),且该问题在侧视角情况下会更加严重。Since the width of the black matrix of high-resolution products is generally less than 6.0 μm, the overlapping width of the black matrix and the data lines is small. If the color filter substrate 27 and the array substrate 20 are slightly shifted to one side, as shown in FIG. 2 , the range of the fringe electric field formed by the pixel electrode 16 and the common electrode 25 will be close to or even exceed the other side of the black matrix 22 , that is, the deflection range of the liquid crystal layer will be close to or even exceed the other side of the black matrix 22 . When the display device displays red, green, and blue images separately, that is, the first sub-pixel unit 23 is loaded with data voltage, and the adjacent sub-pixel unit 23 is not loaded with voltage, then except for the outgoing light 21 of the first sub-pixel unit 23, There will be a slight outgoing light 25 on the side of the black matrix close to the adjacent sub-pixel unit 23, which will cause the monochromatic outgoing light (such as red) of the first sub-pixel unit 23 to be emitted from the adjacent sub-pixel unit 23 Monochromatic light (such as green) undergoes color mixing (such as yellow), and the problem is exacerbated by side viewing angles.
发明内容Contents of the invention
本发明的目的是解决现有技术中显示装置中容易混色的问题,提供一种能够避免混色的阵列基板和显示装置。The object of the present invention is to solve the problem of easy color mixing in display devices in the prior art, and provide an array substrate and a display device that can avoid color mixing.
解决本发明技术问题所采用的技术方案是一种阵列基板,包括衬底基板,所述衬底基板上设置有与各亚像素单元区域相对应的像素电极层,所述的像素电极层包括多个间隔设置的条状像素电极;所述衬底基板上还设置有与所述的像素电极层相互绝缘设置的公共电极,所述的公共电极位于两相邻亚像素单元区域之间的位置设置有预设间隔的狭缝。The technical solution adopted to solve the technical problem of the present invention is an array substrate, including a base substrate, on which a pixel electrode layer corresponding to each sub-pixel unit area is arranged, and the pixel electrode layer includes multiple strip-shaped pixel electrodes arranged at intervals; the base substrate is also provided with a common electrode insulated from the pixel electrode layer, and the common electrode is located between two adjacent sub-pixel unit regions. Slits with preset intervals.
本发明提供的阵列基板中公共电极和像素电极之间的边缘电场的范围只能作用到公共电极的外侧边缘,该边缘电场不能作用到相邻亚像素单元,即当亚像素单元加电压,而相邻亚像素单元不加电压时,边缘电场不能驱动液晶分子长轴沿平行电场方向转动,不会造成相邻亚像素单元产生出射光,从而避免造成混色。In the array substrate provided by the present invention, the range of the fringe electric field between the common electrode and the pixel electrode can only be applied to the outer edge of the common electrode, and the fringe electric field cannot be applied to the adjacent sub-pixel units, that is, when a voltage is applied to the sub-pixel unit, the When no voltage is applied to the adjacent sub-pixel units, the fringe electric field cannot drive the long axis of the liquid crystal molecules to rotate along the direction parallel to the electric field, which will not cause the adjacent sub-pixel units to generate outgoing light, thereby avoiding color mixing.
优选的是,位于两相邻亚像素单元区域之间位置的所述的条状像素电极之间同层设置有补偿电阻层。由于在补偿电阻层和相邻像素单元的像素电极之间形成平面电场,平面电场和边缘电场能够叠加作用于像素单元上方的液晶分子,提高了入射光的透过率。Preferably, a compensation resistor layer is provided in the same layer between the strip-shaped pixel electrodes located between two adjacent sub-pixel unit regions. Since a planar electric field is formed between the compensation resistance layer and the pixel electrodes of adjacent pixel units, the planar electric field and the fringe electric field can superimpose and act on the liquid crystal molecules above the pixel unit, thereby improving the transmittance of incident light.
优选的是,所述补偿电阻层采用氧化铟锡制作,厚度范围为,或者所述补偿电阻层采用导电金属制作厚度范围为。Preferably, the compensation resistance layer is made of indium tin oxide, with a thickness in the range of , or the compensation resistor layer is made of conductive metal with a thickness range of .
优选的是,所述补偿电阻层的宽度范围为2.0-3.0um。Preferably, the compensation resistance layer has a width in the range of 2.0-3.0um.
优选的是,所述预设间隔的狭缝的宽度范围为2.0-3.0um。Preferably, the slits at preset intervals have a width in the range of 2.0-3.0um.
优选的是,所述补偿电阻层的边缘与相邻的所述条状像素电极边缘的宽度范围为2.0-3.0um。Preferably, the width range between the edge of the compensation resistor layer and the adjacent edge of the strip-shaped pixel electrode is 2.0-3.0um.
优选的是,所述阵列基板上还设置有公共电极线,所述条状像素电极和公共电极之间设有绝缘层,所述的补偿电阻层设在绝缘层上,并通过设置在所述绝缘层上的过孔连接到公共电极线。Preferably, the array substrate is also provided with a common electrode line, an insulating layer is provided between the strip-shaped pixel electrodes and the common electrode, the compensation resistor layer is provided on the insulating layer, and is arranged on the The vias on the insulating layer are connected to the common electrode line.
本发明的另一个目的是解决现有技术的显示装置的相邻像素单元容易混色的问题,提供一种能够避免混色的显示装置。Another object of the present invention is to solve the problem that adjacent pixel units of the display device in the prior art are prone to color mixing, and provide a display device that can avoid color mixing.
解决本发明技术问题所采用的技术方案是一种显示装置,包括彩膜基板,还包括上述的阵列基板,所述彩膜基板上设置有黑矩阵和多个亚像素单元,所述阵列基板的公共电极的预设间隔的狭缝与所述黑矩阵所在位置相对应。The technical solution adopted to solve the technical problem of the present invention is a display device, including a color filter substrate, and also includes the above-mentioned array substrate, the color filter substrate is provided with a black matrix and a plurality of sub-pixel units, and the array substrate The slits at preset intervals of the common electrodes correspond to the positions of the black matrix.
优选的是,所述阵列基板上的补偿电阻层与所述黑矩阵所在位置相对应。Preferably, the compensation resistor layer on the array substrate corresponds to the position of the black matrix.
优选的是,所述的黑矩阵的宽度范围为4-6um。Preferably, the width range of the black matrix is 4-6um.
本发明还提供一种上述阵列基板的制作方法,包括:在衬底基板上沉积导电薄膜层,通过构图工艺形成包括与各亚像素单元区域相对应的像素电极层的图形,公共电极的图形,且所述像素电极层包括多个间隔设置的条状像素电极,所述公共电极位于两相邻亚像素单元区域之间的位置设置有预设间隔的狭缝。The present invention also provides a method for manufacturing the above-mentioned array substrate, comprising: depositing a conductive thin film layer on the base substrate, forming a pattern including a pixel electrode layer corresponding to each sub-pixel unit area, and a pattern of a common electrode through a patterning process, In addition, the pixel electrode layer includes a plurality of strip-shaped pixel electrodes arranged at intervals, and the common electrode is provided with slits at preset intervals at positions between two adjacent sub-pixel unit regions.
优选的,所述的阵列基板的制作方法还包括:在位于两相邻亚像素单元区域之间位置的所述的条状像素电极之间同层形成补偿电阻层的图形。Preferably, the manufacturing method of the array substrate further includes: forming a pattern of a compensation resistance layer in the same layer between the strip-shaped pixel electrodes located between two adjacent sub-pixel unit regions.
优选的,所述的阵列基板的制作方法还包括:在衬底基板上形成公共电极线的图形和绝缘层的图形,且所述绝缘层形成在所述像素电极层和公共电极之间,所述的补偿电阻层形成在所述绝缘层上,并通过设置在所述绝缘层上的过孔连接到公共电极线。本发明的显示装置由于具有上述的阵列基板所以能够避免相邻亚像素单元产生混色。Preferably, the manufacturing method of the array substrate further includes: forming a pattern of common electrode lines and a pattern of an insulating layer on the base substrate, and the insulating layer is formed between the pixel electrode layer and the common electrode, so that The above-mentioned compensation resistance layer is formed on the insulating layer, and is connected to the common electrode line through the via hole provided on the insulating layer. Since the display device of the present invention has the above-mentioned array substrate, it can avoid color mixing between adjacent sub-pixel units.
附图说明Description of drawings
图1为现有技术中显示装置的对盒正确时的截面示意图。FIG. 1 is a schematic cross-sectional view of a display device in the prior art when the boxes are correctly aligned.
图2为现有技术中显示装置因对盒偏差发生混色时的截面示意图。FIG. 2 is a schematic cross-sectional view of a display device in the prior art when color mixing occurs due to a deviation in alignment of boxes.
图3为本发明实施例1中显示装置对盒正确时的截面示意图。Fig. 3 is a schematic cross-sectional view of the display device when the box is correctly aligned in Embodiment 1 of the present invention.
图4为本发明实施例1中显示装置对盒偏差时的截面示意图。FIG. 4 is a schematic cross-sectional view of the display device in Embodiment 1 of the present invention when the box is deviated.
图5为本发明实施例1中补偿电阻层通过过孔连接到公共电极线上的示意图。FIG. 5 is a schematic diagram of connecting the compensation resistance layer to the common electrode line through a via hole in Embodiment 1 of the present invention.
图6为本发明实施例1中具有过孔的阵列基板的部分截面示意图。FIG. 6 is a schematic partial cross-sectional view of the array substrate with via holes in Embodiment 1 of the present invention.
其中:in:
11.入射光;12.数据线;13.衬底基板;14.公共电极;15.绝缘层;16.像素电极;17.补偿电阻层;18.过孔;19.公共电极线;20.阵列基板;21.出射光;22.黑矩阵;23.亚像素单元;24.平坦层;25.小束出射光;26.亚像素单元区域;27.彩膜基板;31.液晶分子;32.边缘电场;33.平面电场;34.液晶层;35.狭缝。11. Incident light; 12. Data line; 13. Substrate substrate; 14. Common electrode; 15. Insulation layer; 16. Pixel electrode; 17. Compensation resistance layer; 18. Via hole; 19. Common electrode line; 20. Array substrate; 21. Outgoing light; 22. Black matrix; 23. Subpixel unit; 24. Flat layer; 25. Small beam of outgoing light; 26. Subpixel unit area; 27. Color filter substrate; 31. Liquid crystal molecules; 32 . Fringe electric field; 33. Plane electric field; 34. Liquid crystal layer; 35. Slit.
具体实施方式detailed description
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明作进一步详细描述。In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
实施例1Example 1
如图3-6所示,本实施例提供一种阵列基板,包括该阵列基板的显示装置,以及阵列基板的制作方法。As shown in FIGS. 3-6 , the present embodiment provides an array substrate, a display device including the array substrate, and a manufacturing method of the array substrate.
如图3所示,本发明的显示装置包括阵列基板20和彩膜基板27,以及设置两者间的液晶层34。As shown in FIG. 3 , the display device of the present invention includes an array substrate 20 and a color filter substrate 27 , and a liquid crystal layer 34 disposed therebetween.
其中,阵列基板20包括衬底基板13,所述衬底基板13上设置有与各亚像素单元区域26相对应的像素电极层,所述的像素电极层包括多个间隔设置的条状像素电极16;所述衬底基板13上还设置有与所述的像素电极层相互绝缘设置的公共电极14,其中,公共电极14和像素电极16之间可设有绝缘层15;所述的公共电极14位于两相邻亚像素单元区域26之间的位置设置有预设间隔的狭缝35。优选的,预设间隔的狭缝35的宽度范围为2.0-3.0um。Wherein, the array substrate 20 includes a base substrate 13, on which a pixel electrode layer corresponding to each sub-pixel unit area 26 is arranged, and the pixel electrode layer includes a plurality of strip-shaped pixel electrodes arranged at intervals. 16. The base substrate 13 is also provided with a common electrode 14 which is insulated from the pixel electrode layer, wherein an insulating layer 15 may be provided between the common electrode 14 and the pixel electrode 16; the common electrode 14 is located between two adjacent sub-pixel unit regions 26 and is provided with slits 35 at predetermined intervals. Preferably, the width of the slits 35 at preset intervals ranges from 2.0-3.0um.
这样公共电极14和像素电极16之间的边缘电场32的范围只能作用到公共电极14的外侧边缘,该边缘电场32只在亚像素单元区域26范围内,而不会超过该范围,即当对亚像素单元区域26(图中左侧)加电压,而相邻亚像素单元区域(图中26的右侧的亚像素单元区域)不加电压时,由于边缘电场32不能作用到图中26的右侧的亚像素单元区域,因此该区域的液晶分子31长轴不会发生转动,从而不会造成相邻亚像素单元区域26的右侧的亚像素单元区域产生出射光21,从而避免造成混色。In this way, the range of the fringe electric field 32 between the common electrode 14 and the pixel electrode 16 can only act on the outer edge of the common electrode 14, and the fringe electric field 32 is only within the range of the sub-pixel unit area 26, and will not exceed this range, that is, when When a voltage is applied to the sub-pixel unit area 26 (the left side in the figure), and no voltage is applied to the adjacent sub-pixel unit area (the sub-pixel unit area on the right side of 26 in the figure), the fringe electric field 32 cannot act on the 26 in the figure. Therefore, the long axis of the liquid crystal molecules 31 in this region will not rotate, so that the sub-pixel unit region on the right side of the adjacent sub-pixel unit region 26 will not generate outgoing light 21, thereby avoiding the mixed colors.
优选的,位于两相邻亚像素单元区域26之间位置的所述的条状像素电极16之间同层设置有补偿电阻层17。由于在补偿电阻层17和相邻亚像素单元区域26的像素电极16之间形成平面电场33,平面电场33和边缘电场32能够叠加作用于亚像素单元区域26上方的液晶分子31,提高了入射光11的透过率。Preferably, a compensation resistor layer 17 is provided in the same layer between the strip-shaped pixel electrodes 16 located between two adjacent sub-pixel unit regions 26 . Since the planar electric field 33 is formed between the compensation resistance layer 17 and the pixel electrode 16 of the adjacent sub-pixel unit region 26, the planar electric field 33 and the fringe electric field 32 can superimpose and act on the liquid crystal molecules 31 above the sub-pixel unit region 26, which improves the incident The transmittance of light 11.
进一步的,狭缝35的宽度范围可控制在使补偿电阻层17在公共电极14所在的平面的投影与公共电极14不相交。Further, the width range of the slit 35 can be controlled so that the projection of the compensation resistor layer 17 on the plane where the common electrode 14 is located does not intersect with the common electrode 14 .
其中,彩膜基板27包括平坦层24和设置在该平坦层24上的多个亚像素单元23,彩膜基板27的相邻的亚像素单元23之间设有黑矩阵22;优选的,阵列基板20的公共电极14的预设间隔的狭缝35与黑矩阵22所在位置相对应。进一步的,阵列基板20上的补偿电阻层17与所述黑矩阵22所在位置相对应,即补偿电阻层17在黑矩阵22的对应下方,即补偿电阻层17位于黑矩阵22在补偿电阻层17所在的平面的投影内,这样进一步防止平面电场33的作用范围超出黑矩阵22的另一侧。Wherein, the color filter substrate 27 includes a flat layer 24 and a plurality of sub-pixel units 23 arranged on the flat layer 24, and a black matrix 22 is arranged between adjacent sub-pixel units 23 of the color filter substrate 27; preferably, the array The preset spacing of the slits 35 of the common electrodes 14 on the substrate 20 corresponds to the position of the black matrix 22 . Further, the compensation resistance layer 17 on the array substrate 20 corresponds to the position of the black matrix 22, that is, the compensation resistance layer 17 is below the black matrix 22, that is, the compensation resistance layer 17 is located on the black matrix 22 and the compensation resistance layer 17 In the projection of the plane where it is located, this further prevents the action range of the plane electric field 33 from going beyond the other side of the black matrix 22 .
如图4所示,即使彩膜基板27和阵列基板20对盒时向一侧发生偏移时,也不会有在与亚像素单元区域26相邻的亚像素单元区域(图中右侧)产生小束出射光。优选的,黑矩阵的宽度范围为4-6um,补偿电阻层在其两侧的亚像素单元23间最短距离的方向上的尺寸为2.0-3.0um,也就是图3所示的补偿电阻层17的宽度范围为2.0-3.0um。As shown in FIG. 4 , even if the color filter substrate 27 and the array substrate 20 are shifted to one side when the box is aligned, there will be no sub-pixel unit area adjacent to the sub-pixel unit area 26 (right side in the figure). Produces a small beam of outgoing light. Preferably, the width range of the black matrix is 4-6um, and the size of the compensation resistance layer in the direction of the shortest distance between the sub-pixel units 23 on both sides is 2.0-3.0um, that is, the compensation resistance layer 17 shown in FIG. 3 The width range is 2.0-3.0um.
优选的,补偿电阻层17的垂直于彩膜基板27的方向上的中心线与黑矩阵22的垂直于彩膜基板27的方向上的中心线重合,这样,当彩膜基板27和阵列基板20对盒时向一侧发生偏移时,黑矩阵22和补偿电阻层17的上述中心线的偏差也在控制范围内,不会导致平面电场33的作用范围超出黑矩阵22的另一侧,如图4所示,也不会在与亚像素单元区域26相邻的亚像素单元区域(图中右侧)产生小束出射光。Preferably, the centerline of the compensation resistor layer 17 in the direction perpendicular to the color filter substrate 27 coincides with the centerline of the black matrix 22 in the direction perpendicular to the color filter substrate 27, so that when the color filter substrate 27 and the array substrate 20 When the box is shifted to one side, the deviation of the above-mentioned center line of the black matrix 22 and the compensation resistance layer 17 is also within the control range, and the range of action of the plane electric field 33 will not exceed the other side of the black matrix 22, such as As shown in FIG. 4 , a small beam of outgoing light will not be generated in the sub-pixel unit area adjacent to the sub-pixel unit area 26 (right side in the figure).
优选的,所述补偿电阻层17的边缘与相邻的所述条状像素电极16边缘的宽度范围为2.0-3.0um.,保持合适的距离以控制平面电场33的作用范围。Preferably, the width range between the edge of the compensation resistor layer 17 and the adjacent edge of the strip-shaped pixel electrode 16 is 2.0-3.0 um. An appropriate distance is kept to control the range of action of the planar electric field 33 .
优选的,补偿电阻层17采用氧化铟锡或导电金属制作,厚度范围分别为或公共电极14和补偿电阻层17都可以采用氧化铟锡,这样能节省操作步骤;当采用导电金属时由于补偿电阻层17位于黑矩阵22在补偿电阻层17所在的平面的投影内,即使导电金属不是透明的也不影响光线的出射,同时,导电金属的导电性能更好,降低了公共电极的电阻。Preferably, the compensation resistance layer 17 is made of indium tin oxide or conductive metal, and the thickness ranges are respectively or Both the common electrode 14 and the compensation resistance layer 17 can use indium tin oxide, which can save operation steps; when using conductive metal, since the compensation resistance layer 17 is located in the projection of the black matrix 22 on the plane where the compensation resistance layer 17 is located, even if the conductive metal It is not transparent and does not affect the emission of light. At the same time, the conductive metal has better conductivity and reduces the resistance of the common electrode.
如图5-6所示,优选的,公共电极14和像素电极16之间设有绝缘层15,补偿电阻层17设在绝缘层15上,补偿电阻层17通过设置在绝缘层15中的过孔18连接到公共电极线19上,可以减小公共电极的电阻,有利于显示品质的改善。As shown in FIGS. 5-6 , preferably, an insulating layer 15 is provided between the common electrode 14 and the pixel electrode 16, and the compensation resistance layer 17 is disposed on the insulation layer 15. The hole 18 is connected to the common electrode line 19, which can reduce the resistance of the common electrode, which is beneficial to the improvement of the display quality.
上述阵列基板20的制作方法包括以下步骤:The manufacturing method of the above-mentioned array substrate 20 includes the following steps:
1.在衬底基板13上沉积导电薄膜层,通过构图工艺形成包括与各亚像素单元区域26相对应的像素电极层的图形,公共电极14的图形,且所述像素电极层包括多个间隔设置的条状像素电极16,所述公共电极14位于两相邻亚像素单元区域26之间的位置设置有预设间隔的狭缝35。构图工艺为现有技术范畴,在此不再一一赘述。1. Deposit a conductive thin film layer on the base substrate 13, form a pattern comprising a pixel electrode layer corresponding to each sub-pixel unit area 26, and a pattern of a common electrode 14 through a patterning process, and the pixel electrode layer includes a plurality of intervals The strip-shaped pixel electrodes 16 are provided, and the common electrode 14 is provided with slits 35 at preset intervals at positions between two adjacent sub-pixel unit regions 26 . The patterning process belongs to the prior art category, and will not be repeated here.
2.在位于两相邻亚像素单元区域26之间位置的所述的条状像素电极16之间同层形成补偿电阻层17的图形。构图工艺为现有技术范畴,在此不再一一赘述。2. A pattern of compensation resistance layer 17 is formed on the same layer between the strip-shaped pixel electrodes 16 located between two adjacent sub-pixel unit regions 26 . The patterning process belongs to the prior art category, and will not be repeated here.
3.在衬底基板上形成公共电极线19的图形和绝缘层15的图形,且所述绝缘层15形成在所述像素电极层和公共电极14之间,所述的补偿电阻层17形成在所述绝缘层15上,并通过设置在所述绝缘层15上的过孔18连接到公共电极线19。构图工艺和制作过孔为现有技术范畴,在此不再一一赘述。3. Form the pattern of the common electrode line 19 and the pattern of the insulating layer 15 on the base substrate, and the insulating layer 15 is formed between the pixel electrode layer and the common electrode 14, and the compensation resistance layer 17 is formed on on the insulating layer 15 and connected to the common electrode line 19 through the via hole 18 provided on the insulating layer 15 . The patterning process and the fabrication of via holes are in the scope of the prior art, and will not be repeated here.
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。It can be understood that, the above embodiments are only exemplary embodiments adopted for illustrating the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.
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