CN103165590B - Light-emitting diode and direct-light-type backlight - Google Patents

Abstract

A kind of light-emitting diode, comprise a substrate, a light-emitting diode chip for backlight unit, first electrode, second electrode, an encapsulated layer and a reflector, a groove offered by this substrate, described reflector is attached on the bottom surface of this groove, this light-emitting diode chip for backlight unit to be placed in this groove and to be positioned at the top in this reflector, the groove that this encapsulated layer is filled in this substrate is interior to cover this reflector and this light-emitting diode chip for backlight unit coated, this reflector comprises first reflector and second reflector, this first reflector is positioned at this groove floor central authorities, this second reflector is looped around the periphery in this first reflector and is connected with the first reflector, the surface in the first reflector is convex surface, the surface in the second reflector is concave surface, this light-emitting diode chip for backlight unit is electrically connected with this first electrode and the second electrode, this light-emitting diode chip for backlight unit has an exiting surface relative with this reflector.The present invention also provides a kind of direct-light-type backlight with this light-emitting diode.

Description

LED and direct backlight

technical field

The invention relates to a light-emitting diode and a direct-down backlight source using the light-emitting diode.

Background technique

Light-emitting diodes are energy-saving, environmentally friendly, and long-life solid-state light sources. Therefore, the research on light-emitting diode technology has been very active in the past ten years, and light-emitting diodes are gradually replacing traditional light sources such as fluorescent lamps and incandescent lamps.

The light-emitting diodes in the prior art generally include a substrate, a reflective layer, a light-emitting diode chip and a packaging layer, the reflective layer is attached to the surface of the substrate, the light-emitting diode chip is located above the reflective layer, and the light-emitting diode chip has an orientation On the light emitting surface of the reflective layer, the encapsulation layer covers the reflective layer and wraps the LED chip. The light emitted by the LED chip is directed towards the reflective layer, and the reflective layer reflects the light to the outside. However, the light intensity of the light emitted laterally by a single light emitting diode is small, and when the light emitting diode is used to manufacture a backlight source, it is necessary to densely arrange a plurality of light emitting diodes on a panel. Due to the large number of LEDs used, the distance between each LED is small, and each LED generates more heat when it is working. Several hot spots (hotspots) will appear in the backlight due to heat accumulation. If the heat If it is not released in time, the temperature of the light-emitting diode will be too high to work normally, or even burned out.

Contents of the invention

In view of this, it is necessary to provide a light-emitting diode with strong side-emitting light and a direct-lit backlight using the light-emitting diode.

A light-emitting diode, comprising a substrate, a light-emitting diode chip, a first electrode, a second electrode, an encapsulation layer and a reflective layer, the substrate has a groove, and the reflective layer is attached to the bottom surface of the groove , the light-emitting diode chip is placed in the groove and above the reflective layer, the encapsulation layer is filled in the groove of the substrate to cover the reflective layer and wrap the light-emitting diode chip, the reflective layer includes a first A reflective layer and a second reflective layer, the first reflective layer is located in the center of the bottom surface of the groove, the second reflective layer surrounds the periphery of the first reflective layer and is connected to the first reflective layer, the surface of the first reflective layer is The convex surface protrudes toward the light emitting diode chip, the surface of the second reflective layer is concave, the light emitting diode chip is electrically connected with the first electrode and the second electrode, and the light emitting diode chip has a light emitting surface opposite to the reflective layer.

A direct-lit backlight using the above-mentioned light-emitting diodes, comprising a backplane, a plurality of the above-mentioned light-emitting diodes, an optical module placed above the backplane, and a frame surrounding the backplane, the plurality of light-emitting diodes The diodes are arranged on the back plate at intervals, and the light emitted from the light emitting diodes passes through the optical module and emits outwards.

Since the surface of the first reflective layer is convex and has a diverging effect on the light, more incident light will be reflected by the first reflective layer to the direction of both sides of the light-emitting diode chip, so that the light intensity on both sides of the light-emitting diode chip is relatively large, and the light-emitting diode With strong side light. In the above-mentioned direct-type backlight, since a single light-emitting diode has strong side light, the distance between each light-emitting diode can be set relatively large, which not only reduces the number of light-emitting diodes used, but also prevents heat from entering the direct-type backlight. Accumulation is conducive to timely heat dissipation.

Description of drawings

FIG. 1 is a cross-sectional view of a light emitting diode according to a preferred embodiment of the present invention.

FIG. 2 is a top view corresponding to the LED in FIG. 1 .

FIG. 3 is a light path diagram of the light emitting diode in FIG. 1 when it is working.

FIG. 4 is a coordinate diagram reflecting the relationship between the exit angle and light intensity of the light emitted by the light emitting diode in FIG. 1 .

FIG. 5 is a schematic cross-sectional view of a direct-lit backlight applying the light-emitting diode shown in FIG. 1 .

Explanation of main component symbols

Substrate 10 groove 101 led 100 LED chip 11 first connector 12 second connector 12a encapsulation layer 14 reflective layer 15 first reflective layer 151 second reflective layer 152 third reflective layer 153 first electrode 13 second electrode 13a first paragraph 132 second paragraph 133 Phosphor powder 170 Direct Type Backlight 200 Backplane 20 Optical module twenty two Diffusion plate 222 The first brightness enhancement film 224 Second Brightness Enhancement Film 226 frame twenty four

The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.

Detailed ways

As shown in Fig. 1 and Fig. 2, it is a light emitting diode according to a preferred embodiment of the present invention. The light emitting diode 100 includes a substrate 10, a light emitting diode chip 11, first and second connectors 12, 12a, first and second Two electrodes 13 , 13 a , an encapsulation layer 14 and a reflective layer 15 .

The substrate 10 defines a groove 101 . A layer of reflective material is provided on the bottom surface of the groove 101 to form the reflective layer 15 . The reflective layer 15 includes a first reflective layer 151 located at the center of the bottom surface of the groove 101, a second reflective layer 152 surrounding the periphery of the first reflective layer 151 and connected to the first reflective layer 151, and a second reflective layer 152 surrounding the second reflective layer 151. A third reflective layer 153 is formed around the reflective layer 152 and connected to the second reflective layer 152 . Surfaces of the first reflective layer 151 , the second reflective layer 152 and the third reflective layer 153 are all arc surfaces. The surface of the first reflective layer 151 is a convex surface protruding toward the LED chip 11 , and the surfaces of the second reflective layer 152 and the third reflective layer 153 are both concave. The curvature of the second reflective layer 152 is smaller than that of the third reflective layer 153 . The depth D1 of the second reflective layer 152 in the groove 101 is no less than the depth D2 of the third reflective layer 153 in the groove 101 . The depth D1 of the second reflective layer 152 in the groove 101 gradually decreases from the direction away from the first reflective layer 151, and the depth D2 of the third reflective layer 153 in the groove 101 decreases from the direction away from the second reflective layer 152. slowing shrieking. At the junction of the second reflective layer 152 and the third reflective layer 153, the depth D1 of the second reflective layer 152 in the groove 101 has a minimum value, and the depth D2 of the third reflective layer 153 in the groove 101 has a maximum value. value.

The first and second electrodes 13 , 13 a are disposed on the upper surface of the substrate 10 . Each of the first and second electrodes 13 , 13 a includes a first segment 132 with a wider width and a second segment 133 with a narrower width. The first segments 132 of the first and second electrodes 13 , 13 a are disposed outside the groove 101 and located at opposite ends of the substrate 10 . The second section 133 of the first and second electrodes 13, 13a extends from the first section 132 to the central position of the opening of the groove 101, and is spaced apart from each other. The first and second connecting members 12 and 12a are conductively connected to the lower surfaces of the ends of the second segments 133 of the first and second electrodes 13 and 13a. The width of the second section 133 is smaller than the width of the first section 132 to minimize the first and second electrodes 13 , 13 a interfering with the light emitted by the LED chip 11 .

The LED chip 11 is accommodated in the groove 101 and located at the center of the opening of the groove 101 . The LED chip 11 is spaced apart from the reflective layer 15 . The LED chip 11 has a light-emitting surface, and the light-emitting surface of the LED chip 11 faces the reflective layer 15 . The light emitting diode chip 11 is not disposed at the focal point of the surface of the second reflective layer 152 to prevent the light emitting diode chip 11 from shielding the emitted light. The two electrodes of the light emitting diode chip 11 are electrically connected to the above-mentioned first and second connectors 12 and 12a respectively.

The encapsulation layer 14 is filled with a light-transmitting material in the groove 101 of the substrate 10, the encapsulation layer 14 covers the LED chip 11 and the first and second connectors 12, 12a, and the light-emitting surface of the encapsulation layer 14 is in contact with the The upper surface of the substrate 10 is flush. Optionally, phosphor powder 170 can be doped in the encapsulation layer 14 , for example, near the light-emitting surface of the encapsulation layer 14 , so as to change the wavelength of the outgoing light.

As shown in FIG. 3 , part of the light emitted by the LED chip 11 is reflected to the outside by the first reflective layer 151 , part of the light is reflected to the outside by the second reflective layer 152 , and part of the light is reflected to the outside by the third reflective layer 153 .

FIG. 4 is a graph showing the relationship between the angle of light emitted by the light emitting diode 100 and the light intensity. Since the surface of the first reflective layer 151 is convex and has a diverging effect on the light, a part of the incident light will be reflected by the first reflective layer 151 to the direction of both sides of the light-emitting diode chip 11; The curvature of the second reflective layer 152, the third reflective layer 153 reflects more light emitted by the light emitting diode chip 11 to the direction of both sides of the light emitting diode chip 11, so that the light intensity of the light emitted by the light emitting diode 100 is around 60 degrees at an exit angle is the maximum, that is, the light intensity on both sides of the LED chip 11 is the maximum, and the LED 100 has stronger side light.

FIG. 5 is a schematic diagram of a direct-lit backlight 200 using the LED 100 described above. The direct type backlight source 200 includes a backplane 20, a plurality of light emitting diodes 100 arranged at intervals on the backplane 20, an optical module 22 placed above the light emitting diodes 100, and surrounding the backplane 20. 24 around a frame.

The optical module 22 includes a diffusion plate 222 , a first brightness enhancement film 224 , and a second brightness enhancement film 226 . The diffusion plate 222 can uniformize the light emitted by the plurality of LEDs 100 , and the first brightness enhancement film 224 and the second brightness enhancement film 226 can concentrate the homogenized light to emit at a specific angle.

In the direct type backlight 200 mentioned above, since a single light-emitting diode 100 has strong side light, the distance d between each light-emitting diode 100 can be set relatively large, which not only reduces the number of light-emitting diodes 100 used, but also prevents The heat is accumulated in the direct-lit backlight 200, which is beneficial to dissipate heat in time.

Claims (8)

1. a light-emitting diode, comprise a substrate, a light-emitting diode chip for backlight unit, first electrode, second electrode, an encapsulated layer and a reflector, it is characterized in that: a groove offered by this substrate, described reflector is attached on the bottom surface of this groove, this light-emitting diode chip for backlight unit to be placed in this groove and to be positioned at the top in this reflector, the groove that this encapsulated layer is filled in this substrate is interior to cover this reflector and this light-emitting diode chip for backlight unit coated, this reflector comprises first reflector and second reflector, this first reflector is positioned at this groove floor central authorities, this second reflector is looped around the periphery in this first reflector and is connected with this first reflector, this the second reflector degree of depth in this groove reduces gradually from the direction away from this first reflector, this first reflector is protruding towards this light-emitting diode chip for backlight unit, the surface in this second reflector is concave surface, this light-emitting diode chip for backlight unit is electrically connected with this first electrode and the second electrode, this light-emitting diode chip for backlight unit has an exiting surface towards this reflector.

2. light-emitting diode as claimed in claim 1, is characterized in that: this light-emitting diode chip for backlight unit departs from the focal position on the surface in the second reflector.

3. light-emitting diode as claimed in claim 1, it is characterized in that: this reflector also comprises the 3rd reflector, 3rd reflector is looped around the periphery in this second reflector and is connected with the second reflector, the surface in this second reflector and the 3rd reflector is concave surface, and the curvature in this second reflector is less than the curvature in the 3rd reflector.

4. light-emitting diode as claimed in claim 3, is characterized in that: this second reflector degree of depth in this groove is more than or equal to the 3rd degree of depth of reflector in this groove.

5. light-emitting diode as claimed in claim 4, is characterized in that: the 3rd degree of depth of reflector in this groove reduces gradually from the direction away from this second reflector.

6. light-emitting diode as claimed in claim 5, is characterized in that: in the junction in this second reflector and the 3rd reflector, this second reflector degree of depth in this groove has minimum value, and the 3rd degree of depth of reflector in this groove has maximum.

7. light-emitting diode as claimed in claim 1, is characterized in that: this light-emitting diode chip for backlight unit and this reflector are separately.

8. a direct-light-type backlight, comprise a backboard and be placed in an optics module above this backboard, it is characterized in that: this direct-light-type backlight also comprises multiple light-emitting diode as described in any one of claim 1-7, the plurality of light-emitting diode compartment of terrain is arranged on this backboard, and the light sent from light-emitting diode outwards penetrates through this optics module.