CN102185070A - Light emitting diode and preparation method thereof - Google Patents
Light emitting diode and preparation method thereof Download PDFInfo
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- CN102185070A CN102185070A CN 201110117040 CN201110117040A CN102185070A CN 102185070 A CN102185070 A CN 102185070A CN 201110117040 CN201110117040 CN 201110117040 CN 201110117040 A CN201110117040 A CN 201110117040A CN 102185070 A CN102185070 A CN 102185070A
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Abstract
The invention relates to a light emitting diode and a preparation method thereof. The light emitting diode comprises a substrate, a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer and an electrode layer, wherein the substrate comprises contact holes; the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer are positioned on one side of the substrate; the active layer covers the first conductive semiconductor layer; the second conductive semiconductor layer covers the active layer; a plurality of high-density bumps are formed on the surface of the side, adjacent to the active layer, of the first conductive semiconductor layer; the first and second conductive semiconductor layers have opposite doping types; and the electrode layer is positioned on the other side of the substrate, and is in contact with the first conductive semiconductor layer by the contact holes. The light emitting diode provided by the invention not only can increase a luminous area, but also can reduce power consumption.
Description
Technical field
The present invention relates to a kind of light-emitting diode (Light Emitting Diode, LED) and preparation method thereof.
Background technology
Light-emitting diode is applied to various fields owing to have long, low power consumption and other advantages of life-span, and especially along with its illumination performance index day by day significantly improves, light-emitting diode is commonly used for light-emitting device at lighting field.Wherein, be the III-V compound semiconductor of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in the high-luminance light field of electronic devices huge application potential is arranged, caused people's extensive concern.
See also Fig. 1, Fig. 1 is a kind of cross-sectional view of light-emitting diode of prior art.Described light-emitting diode comprises substrate 11, resilient coating (buffer layer) 12, N type contact layer (N contact layer) 13, N type cover layer (N active layer) 14, active layer (light emitting layers) 15, P type cover layer (P active layer) 16, P type contact layer (P contact layer) 17, the positive electrode 18 that is connected with described P type contact layer 17 and the negative electrode 19 that is connected with described N type contact layer 13.Described light-emitting diode is that two heterogeneous (wherein heterostructure comprises for Double Heterogeneous, the DH) light-emitting diode of structure: N type cover layer 14, active layer 15 and P type cover layer 16.Described active layer 15 is the luminescent layer of described light-emitting diode.Described N type cover layer 14 is a N type doped gallium nitride layer, and described P type cover layer 16 is a P type doped gallium nitride layer.Similarly, U.S. Pat 7193246 has also been announced a kind of nitride semiconductor photogenerator.
Yet, because gallium nitride body monocrystalline is difficult to acquisition, so the growth of gallium nitride material is at present mainly passed through at sapphire (Sapphire, AL
2O
3) means of carrying out heteroepitaxy on the substrate obtain, topmost growth technology has metal oxide chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and halide vapour phase epitaxy (HVPE) etc.Because Sapphire Substrate and epitaxial layer of gallium nitride exist very big lattice mismatch (lattice mismatch) and heat expansion mismatch, so can introduce a large amount of dislocation (dislocation) inevitably in epitaxial layer of gallium nitride.
The researcher that university (NCSU) is found in the North Carolina has proposed a kind of new growing method of gallium nitride recently, arrives shown in Figure 4 as Fig. 2.At first, on Sapphire Substrate 21, form resilient coating 22 and gallium nitride layer 23 successively, shown in have a large amount of dislocations 24 in the gallium nitride layer 23, as shown in Figure 2.Then, adopt the described gallium nitride layer 23 of mode etching of no mask inductive couple plasma reactive ion etching (matchless inductively coupled plasma-reactive ion etching), make described gallium nitride layer 23 form nano wire (nanowires) 25, as shown in Figure 3 at contiguous described Sapphire Substrate 21 places.Adopt growth technology (epitaxial overgrowth), to cover described nano wire 25, the gallium nitride layer that is formed by described gallium nitride layer 23 and extension gallium nitride layer 26 forms hole (void) 27 at contiguous described Sapphire Substrate 21 places at the long extension gallium nitride layer 26 of described gallium nitride layer 23 surface regeneration.Because the existence in described hole 27, the dislocation in the described gallium nitride layer is absorbed (dislocation trapping), thereby has reduced the dislocation density (dislocation density) of described gallium nitride layer, helps improving the luminous efficiency of light-emitting diode.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode that light-emitting area can reduce power consumption again that promptly can increase.
Another object of the present invention is to provide the preparation method of above-mentioned light-emitting diode.
A kind of light-emitting diode comprises substrate, and described substrate comprises contact hole; Be positioned at first conductive semiconductor layer of described substrate one side, cover the active layer of described first conductive semiconductor layer, cover second conductive semiconductor layer of described active layer, one side surface of the contiguous described active layer of described first conductive semiconductor layer is formed with a plurality of projectioies, and described first conductive semiconductor layer has opposite doping type with described second conductive semiconductor layer; Be positioned at the electrode layer of described substrate opposite side, described electrode layer contacts with described first conductive semiconductor layer by described contact hole.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described light-emitting diode also comprises the resilient coating that is arranged between described first conductive semiconductor layer and the described light-emitting diode substrate, described resilient coating comprises contact hole, and described electrode layer contacts with described first conductive semiconductor layer by the contact hole of described substrate and resilient coating.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described light-emitting diode also comprises the contact layer that covers described second conductive semiconductor layer.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described first conductive semiconductor layer are N type doped gallium nitride layer or N type doped aluminum nitride gallium layer, and described second conductive semiconductor layer is P type doped gallium nitride layer or P type doped aluminum nitride gallium layer.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described substrate is a silicon substrate.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, the angular range of the vertical direction of the side of described projection and described first conductive semiconductor layer are 0 to 45 degree.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described projection is a column-shaped projection.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described active layer are single quantum well structure or multi-layer quantum well structure.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described quantum well structure comprises the heterostructure of two or more different band gaps.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described active layer comprises the gallium indium nitride layer and the gallium nitride layer of stacked setting.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, the thickness of the gallium indium nitride layer in the described active layer is 2 nanometers, the thickness of described gallium nitride layer is 10 nanometers.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, the distance range between the described projection be 200 nanometers to 500 nanometers, the altitude range of described projection is that 200 nanometers are to 1000 nanometers.
A kind of preparation method of light-emitting diode comprises the steps: to provide a substrate, forms first conductive semiconductor layer in a side of described substrate; Described first conductive semiconductor layer of etching, the surface of described first conductive semiconductor layer forms a plurality of projectioies; Form active layer, described active layer covers the surface that described first conductive semiconductor layer has a protruding side; In described active layer surface coverage second conductive semiconductor layer, described second conductive semiconductor layer has opposite doping type with described first conductive semiconductor layer; At the described substrate of opposite side etching of described substrate, form contact hole; Opposite side at described substrate forms electrode layer, and described electrode layer contacts with described first conductive semiconductor layer by described contact hole.
The preferred a kind of technical scheme of said method, described first conductive semiconductor layer are N type doped gallium nitride layer or N type doped aluminum nitride gallium layer, and described second conductive semiconductor layer is P type doped gallium nitride layer or P type doped aluminum nitride gallium layer.
The preferred a kind of technical scheme of said method, before forming described first conductive semiconductor layer, on described substrate, form resilient coating, form in the step of contact hole at the described substrate of etching, the described resilient coating of etching, make described resilient coating form contact hole, described electrode layer contacts with described first conductive semiconductor layer by the contact hole of described substrate and resilient coating.
The preferred a kind of technical scheme of said method, the mode of implanting by ion adds N type donor material in substrate of living in.
The preferred a kind of technical scheme of said method, described substrate is a silicon substrate.
The preferred a kind of technical scheme of said method, the angular range of the vertical direction of the side of described projection and described first conductive semiconductor layer are 0 to 45 degree.
The preferred a kind of technical scheme of said method, described projection is a column-shaped projection.
The preferred a kind of technical scheme of said method, described active layer are single quantum well structure or multi-layer quantum well structure.
The preferred a kind of technical scheme of said method, described quantum well structure comprises the heterostructure of two or more different band gaps.
The preferred a kind of technical scheme of said method, described active layer comprises the gallium indium nitride layer and the gallium nitride layer of stacked setting.
The preferred a kind of technical scheme of said method, the thickness of the gallium indium nitride layer in the described active layer is 2 nanometers, the thickness of described gallium nitride layer is 10 nanometers.
The preferred a kind of technical scheme of said method, the distance range between the described projection be 200 nanometers to 500 nanometers, the altitude range of described projection is that 200 nanometers are to 1000 nanometers.
The preferred a kind of technical scheme of said method, described first conductive semiconductor layer of etching forms in the step of projection, and etching gas is the mixture of boron chloride and chlorine, and chamber pressure is 10 to 30 millitorrs, backplane power is 200 to 400 watts, and coil power is 100 to 200 watts.
Compared with prior art, light-emitting diode of the present invention comprises substrate, be positioned at first conductive semiconductor layer, active layer and second conductive semiconductor layer of described substrate one side, one side of the contiguous active layer of first conductive semiconductor layer is formed with projection, described active layer covers first conductive semiconductor layer, because the existence of described projection has increased the area of described active layer between described first, second conductive semiconductor layer, thereby has increased the light-emitting area of light-emitting diode.The opposite side of the substrate of light-emitting diode of the present invention is provided with electrode layer, and described electrode layer is by contact hole and described first conductive semiconductor layer, and the light-emitting diode of vertical stratification of the present invention has reduced conducting resistance, and then has reduced power consumption.
Description of drawings
Fig. 1 is a kind of cross-sectional view of light-emitting diode of prior art.
Fig. 2 is each step schematic diagram of a kind of growing method of gallium nitride of prior art to Fig. 4.
Fig. 5 is the cross-sectional view of a kind of embodiment of light-emitting diode of the present invention.
Fig. 6 is the preparation method's of a light-emitting diode of the present invention flow chart.
Fig. 7 is each step schematic diagram of the preparation method of light-emitting diode of the present invention to Figure 13.
Figure 14 is the cross-sectional view of the another kind of embodiment of light-emitting diode of the present invention.
Embodiment
Light-emitting diode of the present invention comprises substrate, be positioned at first conductive semiconductor layer, active layer and second conductive semiconductor layer of described substrate one side, one side of the contiguous active layer of first conductive semiconductor layer is formed with a plurality of projectioies, described active layer covers first conductive semiconductor layer, because the existence of described projection, increase the area of described active layer between described first, second conductive semiconductor layer, thereby increased the light-emitting area of light-emitting diode.The opposite side of the substrate of light-emitting diode of the present invention is provided with electrode layer, and described electrode layer contacts with described first conductive semiconductor layer by contact hole, thereby has reduced the conducting resistance of described light-emitting diode, and then has reduced power consumption.For making the purpose, technical solutions and advantages of the present invention clearer, the present invention is described in further detail below in conjunction with accompanying drawing.
See also Fig. 5, Fig. 5 is the cross-sectional view of light-emitting diode of the present invention.Described light-emitting diode has vertical cross-section structure.Described light-emitting diode comprises substrate 31, be arranged at resilient coating 32, first conductive semiconductor layer 33, active layer 36, second conductive semiconductor layer 37, the contact layer 38 of described substrate 31 1 sides, the positive electrode 39 of the described light-emitting diode that is connected with described contact layer 38, and the electrode layer 41 that is arranged at described substrate 31 opposite sides.Described electrode layer 41 is the negative electrode of described light-emitting diode.Described first conductive semiconductor layer 33 has opposite doping type with described second conductive semiconductor layer 37.Described substrate 31 and resilient coating 32 have contact hole 40, and described electrode layer 41 contacts with described first conductive semiconductor layer 33 by described contact hole 40.One side surface of described first conductive semiconductor layer, 33 contiguous described active layers 36 is formed with a plurality of column-shaped projections 35.Preferably, the gap width scope between the described column-shaped projection 35 is 200 to 500 nanometers, and the altitude range of described column-shaped projection 35 is 200 to 1000 nanometers.
Concrete, the material of described substrate 31 can be sapphire, carborundum (SiC), silicon, zinc oxide (ZnO), GaAs (GaAs), spinelle (MgAL
2O
4), and lattice constant is near the monocrystalline nitride of nitride-based semiconductor.Preferably, form for convenience contact hole 40 and reduce the conducting resistance of described light-emitting diode on described substrate 31, described substrate 31 is silicon substrate, particularly silicon (a 111) substrate.Preferably, described substrate 31 adds N type alms giver (donor) material by the mode of ion implantation (ion implant) in substrate 31 of living in.
Described resilient coating 32 covers described substrate 31, is used to relax the lattice constant mismatch of described first conductive semiconductor 33 and described substrate 31.The thickness of described resilient coating 32 is generally hundreds of dusts, and material is generally gallium nitride or aluminium nitride (AlN), and preferred, when described substrate 31 was silicon substrate, described resilient coating 32 was an aln layer.Certainly, if the material of described substrate 31 be lattice constant very near the carborundum or the zinc oxide of nitride-based semiconductor, then can omit described resilient coating 32.
Light-emitting diode of the present invention is the light-emitting diode of double-heterostructure, the light-emitting diode of double-heterostructure has many good qualities than homostyructure or single heterojunction structure, can more effective carrier confinement, thus cause more effective charge carrier compound, make the luminous brighter of light-emitting diode.The double-heterostructure of light-emitting diode of the present invention comprises: described first conductive semiconductor layer 33, active layer 36, second conductive semiconductor layer 37.One side of described first conductive semiconductor layer, 33 contiguous described active layers 36 is formed with column-shaped projection 35, described active layer 36 covers the surface that described first conductive semiconductor layer 33 has column-shaped projection 35, therefore, described active layer 36 also forms projection in the position of the described column-shaped projection 35 of correspondence, promptly described active layer 36 and described column-shaped projection 35 autoregistrations (self align).Preferably, described column-shaped projection 35 can also be the projection that is formed by the nano wire bar.
Described first conductive semiconductor layer 33 is n type nitride semiconductor layer, and is concrete, and described first conductive semiconductor layer 33 is the aluminium gallium nitride alloy (Al that N type doped gallium nitride layer or N type mix
yGa
1-yN, y represent the molfraction of aluminium, 0＜y＜1) layer.
Described second conductive semiconductor layer 37 is P type nitride semiconductor layer, and is concrete, and described second conductive semiconductor layer 37 is the aluminium gallium nitride alloy (Al that P type doped gallium nitride layer or P type mix
yGa
1-yN, y represent the molfraction of aluminium, 0＜y＜1) layer, preferred, P type alloy can be magnesium.
Described active layer 36 is single quantum well structure or multi-layer quantum well structure, and described quantum well structure comprises the heterostructure of two or more different band gaps.Concrete, described active layer 36 comprises the InGaN (In of stacked setting
xGa
1-xN, x represent the molfraction of indium, 0＜x＜1) layer and gallium nitride layer.Preferably, the thickness of InGaN is about 2 nanometers in the described active layer 36, and the thickness of gallium nitride is about 10 nanometers.Because described first conductive semiconductor layer 33 is opposite with the doping type of described second conductive semiconductor layer 37, first conductive semiconductor layer 33 that the N type mixes drives the conductive strips that make electronics (electron) drift to the lower gallium indium nitride layer of band gap by external voltage, and second conductive semiconductor layer 37 that the P type mixes drives the valency electricity band that makes hole (hole) drift to the lower gallium indium nitride layer of band gap by external voltage.Because the band gap of gallium nitride layer is greater than gallium indium nitride layer, therefore, utilize the energy bandgap difference between gallium nitride layer and the gallium indium nitride layer, electronics and hole accumulate in combination in the active layer 36 of described single or multiple lift quantum well structure, thereby make that described active layer 36 is luminous.Because there is column-shaped projection 35 on described first conductive semiconductor layer 33 surfaces, therefore, the area of described active layer 36 between described first, second conductive semiconductor layer 33,37 increases, thereby make more charge carrier compound in described active layer 36, increased the light-emitting area of light-emitting diode.Preferably, the aluminium gallium nitride alloy layer that described first conductive semiconductor layer 33 is mixed for the N type, the aluminium gallium nitride alloy layer that described second conductive semiconductor layer 37 is mixed for the P type, because the band gap of aluminium gallium nitride alloy, can prevent the two end electrodes that light-emitting diode is ended from the quantum well drift in electronics and hole greater than the band gap of gallium nitride and InGaN.
Described contact layer 38 can be formed by P type nitride-based semiconductor.If with gallium nitride or the aluminium gallium nitride alloy that the P type mixes, can obtain the contact layer of excellent in crystallinity, if particularly form P type contact layer, then can make described contact layer 38 reach good Ohmic contact with described positive electrode 39 with gallium nitride.The material of described positive electrode 39 can be for containing the metal material of Ni and Au.The material of electrode layer 41 of living in can be for containing the metal material of Ni and Au.
See also Fig. 6, Fig. 6 is the preparation method's of a light-emitting diode of the present invention flow chart.To Figure 13, describe the preparation method of light-emitting diode of the present invention below in conjunction with Fig. 7 in detail.
One substrate 31 is provided, forms the resilient coating 32 and first conductive semiconductor layer 33 successively in a side of described substrate 31.As shown in Figure 7.Preferably, described substrate 31 is silicon substrate, particularly silicon (a 111) substrate.The described resilient coating 32 and first conductive semiconductor layer 33 can adopt the preparation method of prior art to form, and form as the method that adopts the metallo-organic compound chemical vapour deposition (CVD).When described substrate 31 was silicon substrate, described resilient coating 32 was an aln layer.After described resilient coating 32 forms, adopt growth technology to form described first conductive semiconductor layer 33 on the surface of described resilient coating 32.Described first conductive semiconductor layer 33 is n type nitride semiconductor layer, and is concrete, and described first conductive semiconductor layer 33 is N type doped gallium nitride layer or is aluminium gallium nitride alloy (Al
yGa
1-yN, y represent the molfraction of aluminium, 0＜y＜1) layer.
It is a plurality of protruding 35 that described first conductive semiconductor layer 33 of etching, the surface of described first conductive semiconductor layer 33 form cylindricality, as shown in Figure 8.In etching process, etching gas is the mixture of boron chloride and chlorine, and chamber pressure is 10 to 30 millitorrs, and backplane power is 200 to 400 watts, and coil power is 100 to 200 watts.Gap width scope between the described column-shaped projection 35 is 200 to 500 nanometers, and the altitude range of described column-shaped projection 35 is 200 to 1000 nanometers.Concrete, the nanometer lines projection that described column-shaped projection 35 can also form for the mode that adopts no mask inductive couple plasma reactive ion etching.
After described first conductive semiconductor layer 33 surfaces form column-shaped projection 35, at described first conductive semiconductor layer, 33 surface coverage active layers 36, as shown in Figure 9.Because the existence of described first conductive semiconductor layer, 33 surperficial column-shaped projections 35, described active layer 36 be the also corresponding projection that forms in described column-shaped projection 35 positions.Described active layer 37 can adopt the preparation method of prior art to form, and forms as the method that adopts the metallo-organic compound chemical vapour deposition (CVD).Described active layer 36 is single quantum well structure or multi-layer quantum well structure, and described quantum well structure comprises the heterostructure of two or more different band gaps.Concrete, described active layer 36 comprises the gallium indium nitride layer and the gallium nitride layer of stacked setting.Preferably, the thickness of gallium indium nitride layer is about 2 nanometers in the described active layer 36, and the thickness of gallium nitride layer is about 10 nanometers.
In surface coverage second conductive semiconductor layer 37 of described active layer 36, as shown in figure 10.Described second conductive semiconductor layer 37 has opposite doping type with described first conductive semiconductor layer 33.Described second conductive semiconductor layer 37 can adopt the preparation method of prior art to form, and forms as the method that adopts the metallo-organic compound chemical vapour deposition (CVD).The material of described second conductive semiconductor layer 37 is the aluminium gallium nitride alloy (Al that P type doped gallium nitride or P type mix
yGa
1-yN, y represent the molfraction of aluminium, 0＜y＜1), preferred, P type alloy can be magnesium.
At the surface coverage contact layer 38 of described second conductive semiconductor layer 37, and form the positive electrode 39 of light-emitting diode on the surface of contact layer 38, as shown in figure 11.Described contact layer 38 can adopt the preparation method of prior art to form, and forms as the method that adopts the metallo-organic compound chemical vapour deposition (CVD).The material of described contact layer 38 can be gallium nitride or aluminium gallium nitride alloy.The material of described positive electrode 39 can be for containing the material of Ni and Au.
Opposite side at described substrate 31 carries out reduction processing to described substrate 31, and described substrate 31 of etching and resilient coating 32 make to form contact hole 40 on described substrate 31 and the resilient coating 32, as shown in figure 12.Preferably, after described substrate 31 reduction processing were intact, the mode of implanting by ion added N type donor material in substrate 31 of living in.Reduction processing to described substrate 31 can adopt the preparation method of prior art to form, and does not repeat them here.The step that forms contact hole 40 on described substrate 31 of etching and the resilient coating 32 can adopt the preparation method of prior art to form, and does not repeat them here.
Opposite side surface at described substrate 31 forms electrode layer 41, and described electrode layer 41 contacts with described first conductive semiconductor layer 33 by described contact hole 40, as shown in figure 13.Shown in electrode layer 41 be the negative electrode of described light-emitting diode, material can be for containing the metal material of Ni and Au.
Method with prior art, one side of the substrate 31 of light-emitting diode of the present invention comprises first conductive semiconductor layer 33, active layer 36 and second conductive semiconductor layer 37, one side of first conductive semiconductor layer, 33 contiguous active layers 36 is formed with a plurality of column-shaped projections 35, described active layer 36 covers first conductive semiconductor layer 33, because the existence of described column-shaped projection 35, increase the area of described active layer 36 between described first, second conductive semiconductor layer 33,37, thereby increased the light-emitting area of light-emitting diode.The opposite side of the substrate 31 of light-emitting diode of the present invention is provided with electrode layer 41, and described electrode layer 41 contacts with described first conductive semiconductor layer 33 by contact hole 40, and the light-emitting diode of vertical stratification of the present invention has reduced conducting resistance, and then has reduced power consumption.
The surface of first conductive semiconductor layer 33 of light-emitting diode of the present invention is formed with column-shaped projection 35, but because there is error in preparation technology, the side of described column-shaped projection 35 is not strict vertical with the surface of described first conductive semiconductor layer 33, the angular range of the vertical direction of the side of described column-shaped projection 35 and described first conductive semiconductor layer 33 can be 0 to 45 degree, as described in Figure 14.First conductive semiconductor layer, 33 surfaces of light-emitting diode of the present invention are formed with column-shaped projection 35, but column-shaped projection only is a kind of preferred implementation of the present invention, and described projection can also be the projection of other shapes, and it is described to be not limited to above-mentioned execution mode.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the present invention is not limited at the specific embodiment described in the specification.
Claims (25)
1. a light-emitting diode is characterized in that, comprises
Substrate, described substrate comprises contact hole;
Be positioned at first conductive semiconductor layer of described substrate one side, cover the active layer of described first conductive semiconductor layer, cover second conductive semiconductor layer of described active layer, one side surface of the contiguous described active layer of described first conductive semiconductor layer is formed with a plurality of projectioies, and described first conductive semiconductor layer has opposite doping type with described second conductive semiconductor layer;
Be positioned at the electrode layer of described substrate opposite side, described electrode layer contacts with described first conductive semiconductor layer by described contact hole.
2. light-emitting diode as claimed in claim 1, it is characterized in that, described light-emitting diode also comprises the resilient coating that is arranged between described first conductive semiconductor layer and the described substrate, described resilient coating comprises contact hole, and described electrode layer contacts with described first conductive semiconductor layer by the contact hole of described substrate and resilient coating.
3. light-emitting diode as claimed in claim 1 is characterized in that, described light-emitting diode also comprises the contact layer that covers described second conductive semiconductor layer.
4. light-emitting diode as claimed in claim 1, it is characterized in that, described first conductive semiconductor layer is N type doped gallium nitride layer or N type doped aluminum nitride gallium layer, and described second conductive semiconductor layer is P type doped gallium nitride layer or P type doped aluminum nitride gallium layer.
5. as any described light-emitting diode in the claim 1 to 3, it is characterized in that described substrate is a silicon substrate.
6. as any described light-emitting diode in the claim 1 to 3, it is characterized in that the angular range of the vertical direction of the side of described projection and described first conductive semiconductor layer is 0 to 45 degree.
7. as any described light-emitting diode in the claim 1 to 3, it is characterized in that described projection is a column-shaped projection.
8. as any described light-emitting diode in the claim 1 to 3, it is characterized in that described active layer is single quantum well structure or multi-layer quantum well structure.
9. light-emitting diode as claimed in claim 8 is characterized in that described quantum well structure comprises the heterostructure of two or more different band gaps.
10. as any described light-emitting diode in the claim 1 to 3, it is characterized in that described active layer comprises the gallium indium nitride layer and the gallium nitride layer of stacked setting.
11. light-emitting diode as claimed in claim 10 is characterized in that, the thickness of the gallium indium nitride layer in the described active layer is 2 nanometers, and the thickness of described gallium nitride layer is 10 nanometers.
12. as any described light-emitting diode in the claim 1 to 3, it is characterized in that, the distance range between the described projection be 200 nanometers to 500 nanometers, the altitude range of described projection is that 200 nanometers are to 1000 nanometers.
13. the preparation method of a light-emitting diode is characterized in that, comprises the steps:
One substrate is provided, forms first conductive semiconductor layer in a side of described substrate;
Described first conductive semiconductor layer of etching, the surface of described first conductive semiconductor layer forms a plurality of projectioies;
Form active layer, described active layer covers the surface that described first conductive semiconductor layer has a protruding side;
In described active layer surface coverage second conductive semiconductor layer, described second conductive semiconductor layer has opposite doping type with described first conductive semiconductor layer;
At the described substrate of opposite side etching of described substrate, form contact hole;
Opposite side at described substrate forms electrode layer, and described electrode layer contacts with described first conductive semiconductor layer by described contact hole.
14. the preparation method of light-emitting diode as claimed in claim 13, it is characterized in that, described first conductive semiconductor layer is N type doped gallium nitride layer or N type doped aluminum nitride gallium layer, and described second conductive semiconductor layer is P type doped gallium nitride layer or P type doped aluminum nitride gallium layer.
15. the preparation method of light-emitting diode as claimed in claim 13, it is characterized in that, before forming described first conductive semiconductor layer, on described substrate, form resilient coating, form in the step of contact hole at the described substrate of etching, the described resilient coating of etching makes described resilient coating form contact hole, and described electrode layer contacts with described first conductive semiconductor layer by the contact hole of described substrate and resilient coating.
16. the preparation method of light-emitting diode as claimed in claim 13 is characterized in that, the mode of implanting by ion adds N type donor material in substrate of living in.
17. the preparation method as any described light-emitting diode in the claim 13 to 16 is characterized in that, described substrate is a silicon substrate.
18. the preparation method as any described light-emitting diode in the claim 13 to 16 is characterized in that, the angular range of the vertical direction of the side of described projection and described first conductive semiconductor layer is 0 to 45 degree.
19. the preparation method as any described light-emitting diode in the claim 13 to 16 is characterized in that, described projection is a column-shaped projection.
20. the preparation method as any described light-emitting diode in the claim 13 to 16 is characterized in that, described active layer is single quantum well structure or multi-layer quantum well structure.
21. the preparation method of light-emitting diode as claimed in claim 20 is characterized in that, described quantum well structure comprises the heterostructure of two or more different band gaps.
22. the preparation method as any described light-emitting diode in the claim 13 to 16 is characterized in that, described active layer comprises the gallium indium nitride layer and the gallium nitride layer of stacked setting.
23. the preparation method of light-emitting diode as claimed in claim 22, the thickness of the gallium indium nitride layer in the described active layer is 2 nanometers, and the thickness of described gallium nitride layer is 10 nanometers.
24. the preparation method as any described light-emitting diode in the claim 13 to 16 is characterized in that, the distance range between the described projection be 200 nanometers to 500 nanometers, the altitude range of described projection is that 200 nanometers are to 1000 nanometers.
25. preparation method as any described light-emitting diode in the claim 13 to 16, described first conductive semiconductor layer of etching forms in the step of projection, etching gas is the mixture of boron chloride and chlorine, chamber pressure is 10 to 30 millitorrs, backplane power is 200 to 400 watts, and coil power is 100 to 200 watts.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367584A (en) * | 2012-03-30 | 2013-10-23 | 清华大学 | Light emitting diode and optical element |
| CN108550674A (en) * | 2018-03-27 | 2018-09-18 | 南昌大学 | A kind of light emitting diode and preparation method thereof enhancing hole injection |
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