CN102130243A - Light emitting diode device, method of manufacturing the same, and semiconductor device - Google Patents
Light emitting diode device, method of manufacturing the same, and semiconductor device Download PDFInfo
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- CN102130243A CN102130243A CN2010105551093A CN201010555109A CN102130243A CN 102130243 A CN102130243 A CN 102130243A CN 2010105551093 A CN2010105551093 A CN 2010105551093A CN 201010555109 A CN201010555109 A CN 201010555109A CN 102130243 A CN102130243 A CN 102130243A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 239000010432 diamond Substances 0.000 claims abstract description 233
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 232
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 83
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 77
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000013078 crystal Substances 0.000 claims abstract description 34
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 230000008878 coupling Effects 0.000 claims abstract description 4
- 238000010168 coupling process Methods 0.000 claims abstract description 4
- 238000005859 coupling reaction Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 57
- 239000000203 mixture Substances 0.000 claims description 34
- 230000012010 growth Effects 0.000 claims description 29
- 229910002601 GaN Inorganic materials 0.000 claims description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 22
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 53
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 267
- 238000005229 chemical vapour deposition Methods 0.000 description 47
- 229910052799 carbon Inorganic materials 0.000 description 38
- 238000000151 deposition Methods 0.000 description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 31
- 230000008021 deposition Effects 0.000 description 29
- 150000003376 silicon Chemical class 0.000 description 28
- 238000005516 engineering process Methods 0.000 description 27
- 238000005240 physical vapour deposition Methods 0.000 description 22
- 238000012546 transfer Methods 0.000 description 19
- 229910017083 AlN Inorganic materials 0.000 description 18
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 18
- 230000008859 change Effects 0.000 description 18
- 230000006911 nucleation Effects 0.000 description 14
- 238000010899 nucleation Methods 0.000 description 14
- 238000000576 coating method Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- 150000001721 carbon Chemical group 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 230000005855 radiation Effects 0.000 description 11
- 238000009434 installation Methods 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 241001074085 Scophthalmus aquosus Species 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011469 building brick Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000013528 metallic particle Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910026551 ZrC Inorganic materials 0.000 description 2
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000005571 horizontal transmission Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 241001269238 Data Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- JHFCVRNLWYSLOL-UHFFFAOYSA-N [P].[As].[In] Chemical compound [P].[As].[In] JHFCVRNLWYSLOL-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005328 electron beam physical vapour deposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- QFXZANXYUCUTQH-UHFFFAOYSA-N ethynol Chemical group OC#C QFXZANXYUCUTQH-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- -1 resistor Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a light emitting diode device, a manufacturing method thereof and a semiconductor device, and provides a light emitting diode device integrated with diamond material and a manufacturing method of the device. The method may include epitaxially forming a silicon nitride layer on a substantially single-crystal silicon wafer; epitaxially forming a substantially single-crystal diamond layer on the silicon carbide layer; doping the diamond layer to form a conductive diamond layer; removing the silicon wafer to expose the silicon carbide layer opposite the diamond layer; epitaxially forming a plurality of semiconductor layers on the silicon carbide layer, wherein at least one semiconductor layer contacts the silicon carbide or aluminum nitride layer; and coupling an n-type electrode to at least one of the semiconductor layers such that the semiconductor layers are functionally positioned between the conductive diamond layer and the n-type electrode.
Description
The priority data
The present invention advocates U.S. the 12/755th of filing an application on April 6th, 2010, the priority of No. 034 application for a patent for invention case, this U.S. patent application case is the U.S. the 12/686th that files an application on January 12nd, 2010, the case that continues of No. 288 application for a patent for invention cases, above-mentioned U.S. patent application case are integrated in herein with as a reference.
Technical field
The present invention generally about semiconductor device with and correlation technique.Therefore, the present invention relates to electronics and material science.
Background technology
In many developed countries, be its daily necessities for most of resident's electronic installation.To the using and rely on day by day and increase of electronic installation, produced demand little to volume, the fast electronic installation of speed.Along with electronic circuit speeds up and size reduces, the heat radiation of these devices but becomes problem.
Electronic installation generally comprises the printed circuit board (PCB) with whole connection electronic building brick, and it is comprehensively functional that these assemblies have electronic installation.These electronic building bricks (such as processor, electric crystal, resistor, capacitor, light-emitting diode (LED) etc.) can produce a large amount of heat when work; Along with thermal accumlation, can cause the various heat problems relevant with these electronic building bricks, a large amount of heat not only can influence the reliability of electronic installation, electronic installation even more may lose efficacy, for example, be accumulated in the heat of electronic building brick inside and can cause element to burn out or cause short circuit and make failure of apparatus that therefore, the accumulation of heat finally can influence the functional lifetime of electronic installation in the lip-deep heat of printed circuit board (PCB).This problem is for the electronic building brick with high power and high electric current demand and to support the printed circuit board (PCB) of this electronic building brick especially serious.
Existing known technology adopts such as various heat abstractors such as fan, heat sink, thermoelectric cooling wafer (Peltier) device and Control device of liquid cooling, as the method that reduces thermal accumlation in the electronic installation, because speed up and power consumption increase heat accumulation is increased, so the size of these heat abstractors generally must increase, so that the performance effect, and also may need electric power to drive operation.For example, must increase fan dimension and accelerate its speed adding air flow, and increase heat sink size to increase thermal capacitance and surface area.Yet, in response to less electronics need for equipment, not only be not suitable for these heat abstractors of using size cumulative, and may need the heat abstractor of smaller szie.
Therefore, people constantly research seek the method and the relevant apparatus of suitable heatsinking electronic devices, simultaneously with heat abstractor on electronic installation size and the restriction of power reduce to minimum heat.
Summary of the invention
Therefore, the method that the invention provides the semiconductor device of heat radiation function and make this type of semiconductor device with enhancing.On the one hand, for example, the invention provides a LED device, it comprises a conductibility diamond layer, and is coupled to carborundum (SiC) layer of this diamond layer, a plurality of semiconductor layer, wherein at least one semiconductor layer is coupled to the n type electrode of one of them at least that this silicon carbide layer and is coupled to these a plurality of semiconductor layers, and wherein this conductibility diamond layer and n type electrode are configured to make and are formed with a linear in fact conducting path between the two at conductibility diamond layer and n type electrode.Though can consider the structure of many semiconductor layers, these a plurality of semiconductor layers can be by arranged in order between conductibility diamond layer and n type electrode on the one hand.According to the deposition technique of various materials, the lattice of this silicon carbide layer can extensional mode (epitaxially) be coupled or matches on the lattice of this conductibility diamond layer.
The application that can will carry out according to semiconductor device and use various semi-conducting materials to come this semiconductor device of construction.For example, on the one hand this semi-conducting material can comprise germanium silicide, GaAs, gallium nitride, germanium, zinc sulphide, gallium phosphide, gallium antimonide, gallium arsenide phosphide indium, aluminum phosphate, aluminium arsenide, Aluminum gallium arsenide, gallium nitride, boron nitride, aluminium nitride, indium arsenide, indium phosphide, indium antimonide, indium nitride with and composition thereof one of them kind.
On the other hand, this semi-conducting material can comprise gallium nitride, boron nitride, aluminium nitride, indium nitride with and composition thereof one of them kind.In a particular aspects, this semi-conducting material can comprise gallium nitride.In another particular aspects more, this semi-conducting material can comprise aluminium nitride.
Some aspect according to the present invention, this conductibility diamond layer can change widely according to the application that this semiconductor device is desired to reach.For example, this conductibility diamond layer can be a monocrystalline or is essentially a monocrystalline on the one hand, and on the other hand, this conductibility diamond layer can be a conductibility does not have support force diamond layer (Conductive Adynamic Diamond Layer).In addition, in some applications, this conductibility diamond layer is useful when being transparence.
Can use various technology to make a diamond layer have conductibility.For example, can mix various impurity among the lattice of this diamond layer.These impurity can comprise silicon, boron, phosphorus, nitrogen, lithium, aluminium, gallium or the like.In a particular aspects, for example, this diamond layer can be mixed with boron.Above-mentioned impurity also can comprise metallic particles, and these metallic particles mix in the mode of not interfering this semiconductor device among the lattice, for example mix in the mode that does not hinder lumination of light emitting diode.
The present invention provides the manufacture method of LED device in addition.The method comprises on the one hand: be essentially on the silicon wafer of monocrystalline with extensional mode one and form a silicon carbide layer that is essentially monocrystalline; On this silicon carbide layer, be essentially the diamond layer of monocrystalline with extensional mode formation one; Mix this diamond layer to form a conductibility diamond layer; Remove this silicon wafer to expose silicon carbide layer with respect to this conductibility diamond layer; On this silicon carbide layer, form a plurality of semiconductor layers and make that wherein at least one semiconductor layer contacts this silicon carbide layer with extensional mode; And a n type electrode is coupled on wherein at least one semiconductor layer so that these a plurality of semiconductor layers functionally between this conductibility diamond layer and this n type electrode.
Can use various technology that this diamond layer is deposited to this silicon carbide layer with extensional mode.For example, the step of this formation extension diamond layer can further comprise on the one hand: the manufacture method (Grading) that makes the growing surface of a silicon wafer carry out gradual change makes this growing surface be gradually varied to carborundum to form this silicon carbide layer by silicon; And make the growing surface of a silicon carbide layer carry out the gradual change manufacture method, make this growing surface be gradually varied to diamond to form this diamond layer by carborundum.On the other hand, the step of the epitaxial loayer of this formation monocrystalline silicon carbide can further comprise: forming together the configuration amorphous diamond layer on the silicon single crystal wafer to form between this silicon single crystal wafer and with the silicon carbide layer between the configuration amorphous diamond layer; And removal should be with the configuration amorphous diamond layer to expose this silicon carbide layer.After removal is somebody's turn to do with the configuration amorphous diamond layer, can on this silicon carbide layer that exposes, form this conductibility diamond layer.
The present invention also provides LED device, its comprise a conductibility diamond substrate, be coupled on this diamond substrate and be essentially monocrystalline silicon carbide layer, a plurality ofly be coupled to semiconductor layer and on this silicon carbide layer with extensional mode and be coupled to n type electrode at least one semiconductor layer wherein, it makes these a plurality of semiconductor layers functionally between this conductibility diamond layer and this n type electrode.
Thus, various feature of the present invention is summarized widely, so that can understand following embodiments of the present invention more, and can more recognize the contribution that the present invention does this technology, according to following embodiments of the present invention and appended claims, other features of the present invention will be more clear, also can be understood by implementing the present invention.
Description of drawings
Fig. 1 is the side sectional view of the LED device in one embodiment of the invention.
Fig. 2 is the side sectional view of the LED device in one embodiment of the invention.
Fig. 3 is the side sectional view of the step of formation one LED device in one embodiment of the invention.
Embodiment
Below cooperate graphic and the preferred embodiments of the present invention, further setting forth the present invention is to reach the technological means that predetermined goal of the invention is taked.
Definition
To use following term according to hereinafter illustrated definition when of the present invention describing and advocate.
Unless context offers some clarification in addition, otherwise the article of singulative " " and " being somebody's turn to do " comprise many usages.For example, when mentioning that " one (individual) thermal source " comprises the thermal source of mentioning that one or more is such, and mention that " this diamond layer " comprises the diamond layer of mentioning that one or more is such.
" heat shifts ", " warm-up movement " and words such as " heat transfers " can be used alternatingly mutually, are the speed that is used to point out heat is transferred to from a high-temperature area low-temperature region.Heat transfer can comprise under any the present invention the known heat delivered mechanism of those skilled in the art in the field, for example and not is subject to conductibility, to fluidity and radiativity or the like.
Employed in the literary composition " distributing (emitting) " speech is meant heat or the light transfer manufacture method of transferring to air from a solid-state material.
Employed in the literary composition " light-emitting area " speech is meant a surface of a device or object, and light distributes from this surface.Light can comprise visible light or the light in ultraviolet spectrogram.The example of light-emitting area can comprise and be not restricted to nitride layer on the light-emitting diode, perhaps one will with the nitride layer on the semiconductor layer structure of light-emitting diodes pipe jointing, light then sends from this nitride layer.
Employed in the literary composition " linear conducting path " speech is meant a conducting path along the straight line between two electrodes.
Employed in the literary composition " vapour deposition " speech is meant the material by using gas phase deposition technology to form.The vapour deposition manufacture method can comprise any and be not subject to chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD) and physical vapour deposition (PVD) (Physical Vapor Deposition, manufacture method such as PVD).The those skilled in the art of the technical field of the invention can implement the various different aspects of each CVD (Chemical Vapor Deposition) method widely.The example of CVD (Chemical Vapor Deposition) method comprises the hot filament chemical vapour deposition (CVD), the RF chemical vapour deposition (CVD), laser chemical vapor deposition, laser come off (Laser Ablation), with configuration diamond coating manufacture method (Conformal Diamond Coating Processes), Metalorganic chemical vapor deposition (Metal-Organic CVD, MOCVD), sputter, the thermal evaporation physical vapour deposition (PVD), ionized metal physical vapour deposition (PVD) (Ionized Metal PVD, IMPVD), electro beam physics vapour deposition (Electron Beam PVD, EBPVD), and method such as reactive physical vapour deposition (PVD) or the like.
Employed in the literary composition " chemical vapour deposition (CVD) " or words such as " CVD " are meant to appoint and by chemical mode the diamond grains in the steam are deposited on a lip-deep method.Multiple known chemical vapour deposition technique is arranged in this field.
Employed in the literary composition " physical vapour deposition (PVD) " or words such as " PVD " are meant to appoint and by physics mode the diamond grains in the steam are deposited on a lip-deep method.Multiple known physical gas phase deposition technology is arranged in this field.
Employed in the literary composition " diamond " speech is meant a kind of crystalline texture of carbon atom, and carbon atom and carbon atom are by tetrahedral coordination lattice mode bond in this structure, and this tetrahedral coordination bond promptly is known sp
3Bond.Particularly, each carbon atom be subjected to other four carbon atoms institute around and bond, the carbon atoms around four lay respectively at the summit of positive tetrahedron.In addition, at room temperature, the bond distance between wantonly two carbon atoms is 1.54 dusts, and the angle between wantonly two keys is 109 degree 28 minutes and 16 seconds, and experimental result has very little elementary errors different but can ignore.The structure and properties of diamond comprises its physics and electrical properties, is the technical field of the invention those skilled in the art and knows.
Employed in the literary composition " distorted tetrahedral coordination " speech is meant that the tetrahedral coordination bond of carbon atom is irregular, perhaps departs from the normal tetrahedral structure of aforementioned diamond.This kind distortion kenel causes some of them bond distance lengthening and remaining bond distance's shortening usually, and makes the angle between the key change.In addition, distorted tetrahedral has changed the characteristic and the character of carbon, makes its characteristic and character in fact between with sp
3The carbon structure of coordination bond (for example diamond) with sp
2Between the carbon structure of coordination bond (for example graphite).One of them material that has with the carbon atom of distorted tetrahedral bond is a non-crystal diamond.
Employed in the literary composition " class brill carbon " speech is meant that one is the carbonaceous material of main component with main carbon atom, and a large amount of carbon atoms in this carbonaceous material are with the distorted tetrahedral coordination bond.Bore carbon although chemical vapour deposition (CVD) manufacture method or other manufacture methods can be used for forming class, class is bored carbon and also can be formed by the physical vapour deposition (PVD) manufacture method.Especially, class is bored in the material with carbon element can contain various elements as impurity or alloy, and these elements can comprise and not be subject to hydrogen, sulphur, phosphorus, boron, nitrogen, silicon and tungsten or the like.
Employed in the literary composition " non-crystal diamond " speech is meant kind brill carbon, and such bores carbon essential element is carbon atom, and most carbon atom is with the distorted tetrahedral coordination bond.On the one hand, the amount of carbon atom in the non-crystal diamond can be and accounts for the about at least 90% of total amount, and at least 20% among these carbon atoms are with the distorted tetrahedral coordination bond.Non-crystal diamond has the atomic density that is higher than diamond, and (diamond density is 176 atoms/every cubic centimetre of (atoms/cm
3)).In addition, non-crystal diamond and diamond material volume contraction when fusing.
Employed in the literary composition " no support force (Adynamic) " speech is meant a kind of layer of structure, and this layer structure can't independently be kept its structure and/or intensity.For example, under the situation that lacks a mould layer or a supporting layer, a no support force diamond layer will curl after removing this die face or diamond face or distortion.Although there are many reasons to cause one deck structure to have the character of no support force, on the one hand, the reason that causes not having support force character is very thin of this layer structure.
Employed in the literary composition " growth side " and words such as " growing surfaces " can be used alternatingly mutually, and are meant among a chemical vapour deposition (CVD) manufacture method surface of growing on a film or one deck structure.
Employed in the literary composition " substrate " speech is meant a kind of stayed surface, and this stayed surface can connect various materials to form a semiconductor device or a semiconductor-on-diamond device thus.This substrate can have any profile, thickness or the material that can reach particular result, and comprise and be not restricted to metal, alloy, pottery with and composition thereof.In addition, in some aspects, this substrate can be a conventional semiconductor device or a wafer, perhaps can be a kind of can be in conjunction with the material of a suitable device.
Employed in the literary composition " in fact " speech is meant the complete of an effect, feature, character, state, structure, article or result or is close to scope or degree completely.For example, an object " in fact " is coated, and it means and is fully coated, and is perhaps almost entirely coated.But and absolute completeness differ between true permissible variation degree, can in some example, depend on description.Yet generally speaking, resulting result will be as in whole results absolute and that thoroughly obtain fully the time near fully the time.Fully lack an effect, feature, character, state, structure, article or as a result the time when " in fact " is used in to describe fully or be close to, this occupation mode also is a mode and using comparably as described above.For example, the constituent of one " not comprising in fact " particle can lack particle fully, or is close to and lacks particle fully and arrive the degree that lacks particle as it fully.In other words, if the constituent of one " not comprising in fact " raw material or element do not have can be measured effect, this constituent in fact still can comprise these raw materials or element.
Employed in the literary composition " approximately " is meant the end points elasticity that gives a number range, the numerical value that is given can be higher than this end points a little or be lower than this end points a little.
Employed many article in the literary composition, structural detail, element with and/or material, generally tabulation mode presents in order to convenience.Yet these tabulations should be interpreted as: each member of this tabulation independently is considered as separating and unique member.Therefore, appear in the same group and do not have the indication of other reverse side based on the member of this tabulation, each member in this tabulation all should not be interpreted as with identical with any other member in tabulating.
Concentration, quantity, particle size, volume and other numerical datas can a range format be expressed or are presented.Will be appreciated that, this range format is just to conveniently with succinctly using, therefore this range format should flexibly be interpreted as not only comprising by clear and have been described to make the numerical value of scope restriction, also be included in all independent numerical value and subranges in this scope, just as clearly quoting from each independent numerical value and subrange.For example, the number range of " about 1 to about 5 " should be interpreted as not only comprising know and the number range of describing also should further be interpreted as being included in independent numerical value and subrange in this number range.Therefore, comprise in this number range, comprise such as 1-3,2-4 and 3-5 and 1,2,3, subranges such as 4 and 5 such as independent numerical value such as 2,3 and 4.
This identical rule is applicable to only quotes from single numerical value as the lower limit or the scope of the upper limit.In addition, this interpretive mode is applicable to scope and any described characteristic of any amplitude.
The present invention
The invention provides the semiconductor device that is integrated with the diamond layer manufacture method with this semiconductor device.Semiconductor device, especially irradiative semiconductor device constitute challenge to cooling technology often.It should be noted that although following most of narration is directed to the luminescent device of light-emitting diode etc. specially, the category of the present patent application claim should be therefore not restricted, and these technology are equally applicable to the semiconductor device of other types.
The most of heat that is produced by semiconductor device work is easy to be accumulated in semi-conductive layer inside, therefore influences the efficient of device.For example, light-emitting diode (LED) can be formed by a plurality of nitride layer configurations., LED becomes more and more important LED sustainable development and continuing to increase along with becoming for power demand in electronics and lighting device.The trend that power demand increases progressively has caused these devices to face the problem of heat radiation, these device typical cases all have undersized characteristic, therefore more aggravated the problem of heat radiation, these devices can't be brought into play effect owing to undersized special type can make the conventional aluminum with large volume character heat the heat sink of fin.In addition, these tradition are heat sink if be positioned at the light-emitting area of LED, can hinder the emission of light, if desire to make the heat sink function of not disturbing nitride layer or light-emitting area, it must be positioned at LED and usually such as the face that the connects place between the supporting construction of circuit board, thus, heat sink position is relatively away from the place of most of heat accumulation, that is light-emitting area and semiconductor layer.
Can make LED under high power, also can do suitably heat radiation even if found in the LED encapsulation, to form a diamond layer at present, and can keep the encapsulation of LED small size simultaneously.In addition, on the one hand, by the semiconductor layer draw heat of a diamond layer to a LED, can allow this LED surpass its maximum running wattage (Operating Wattage), work so that can allow this LED be higher than under the running wattage of LED maximum running wattage originally one.
In addition, in luminous semiconductor device and non-luminous semiconductor device, do not have good thermal conductivity relatively owing to constitute the material of semiconductor layer usually, so heat can be trapped in these semiconductor layers.In addition, the lattice of adding between semiconductor layer and the diamond layer does not match, and can slow down heat conduction, therefore more increases the accumulation of heat.Semiconductor device has developed into has now integrated heat dissipating and other character that many diamonds layer is promoted semiconductor device.These diamond layers have increased the heat flow speed of laterally passing through semiconductor device, have therefore reduced the heat that is trapped in the semiconductor layer.These horizontal heat transfers can be promoted the thermal conduction characteristic of many semiconductor device effectively.In addition, some aspect according to the present invention, semiconductor device can be promoted lattice match, further promotes the heat conductivity of semiconductor device thus.In addition, it should be noted that the beneficial characteristics that the diamond layer is provided is that not only the category of its characteristic should only not be limited in the heat radiation in the heat radiation.
If the diamond layer can be integrated in the halfbody device and near semiconductor layer, then this semiconductor layer can be reached more effective internal heat dissipating.The obstruction of one of them integration is the high dielectric property of diamond material, and especially those roughly have the diamond material of single-crystal lattice structure.If this diamond layer is among the conducting path of this semiconductor device, can reach suitable cooling condition, yet, because the dielectric property of diamond causes being difficult to reach aforementioned structure.Found that at present the conductibility diamond can be used as an electrode and is being coupled on this semiconductor layer on the function, and therefore be positioned among the conducting path of this semiconductor device.
In addition, by using a conductibility diamond layer as an electrode, LED device can be configured as has the linear conducting path that passes between two interelectrode semiconductor layers.Many traditional LED device be configured as order from the conducting path of n type electrode with rectangular from the conducting path of p type electrode.The conducting path of this kind " L shaped " causes the rectangular each other state in electronics and hole, has therefore reduced the efficient of semiconductor device.Some aspect according to the present invention, this linearity conducting path make electronics and hole be configured to along identical linear path, therefore can promote the efficient of LED device.
Therefore, in one aspect of the present invention, provide a LED device.As shown in Figure 1, this LED device can comprise a conductibility diamond layer 12, and be coupled to the silicon carbide layer of this conductibility diamond layer 12 or aln layer 14, a plurality of semiconductor layer 16, and wherein at least one semiconductor layer 16 is coupled to the n type electrode 18 that this silicon carbide layer or aln layer 14 and are coupled to wherein at least one semiconductor layer 16.In this device, this conductibility diamond layer 12 on function as a p type electrode.
As shown in Figure 2, in the present invention on the other hand, the support substrates 20 that can be coupled to this semiconductor device with convenience in order to handle and to use.Can between this conductibility diamond layer 12 and this support substrates 20, form a reflector 24 so that the efficient that this conductibility diamond layer 12 is promoted this LED device is passed in the light reflection.Can form this reflector 24 by the known reflecting material of various the technical field of the invention those skilled in the art.The example of one of them reflecting material can be chromium metal or other reflecting materials.
Fig. 3 has shown the part steps of the constructing method of semi-conductive substrate, and in particular aspects of the present invention, this Semiconductor substrate can be used to form a LED device.This method provides a monocrystalline silicon growing substrate 34, can on this substrate other materials be set.Though this silicon growth substrate 34 not necessarily must be a mono-crystalline structures, with respect to the substrate of on-monocrystalline, this single-crystal lattice structure can help other materials with less lattice match to be deposited on this silicon growth substrate 34.Before deposition method for preparing, this silicon growth substrate of complete cleaning anyly may cause the silicon growth substrate and be formed between other layers structure on the substrate the unmatched amorphous silicon of lattice or non-silicon grain is useful so that remove on this wafer certainly.Can in category of the present invention, consider any method that can clear up this silicon growth substrate, yet in one aspect of the present invention, this silicon growth substrate can be immersed among the potassium hydroxide and with distilled water and carry out ultrasonic waves for cleaning.
After this silicon growth substrate 34 of cleaning, can on this silicon growth substrate 34, be formed with a monocrystalline silicon carbide epitaxial loayer 32 and extension diamond layer 36, make this single crystal silicon carbide layer 32 between this silicon growth substrate 34 and diamond layer 36.This silicon carbide layer 32 can be formed on this diamond layer 36 by separate mode, perhaps can be in the result of this diamond layer 36 deposition or with its deposit to be connected.For example, this silicon carbide layer 32 can be one by the result of silicon to the gradual change manufacture method (Gradation Process) of diamond, and is as described below.In addition, can create this silicon carbide layer 32 with growth pattern (In Vivo) in by organism in this silicon growth substrate 34 depositions one amorphous diamond layer, also as described below.
Then, can on this diamond layer 36, form a silicon layer 38.This silicon layer 38 has been promoted the intensity that silicon carrying substrate 42 combines with this diamond layer 36.This silicon carrying substrate 42 has a silicon dioxide (SiO
2) layer is 40 to be attached on this silicon layer 38.After this silicon carrying substrate 42 is attached to wafer bonding manufacturing method on this silicon layer 38, can remove this silicon growth substrate 34 to expose this silicon carbide layer 32.As previously mentioned, this silicon carbide layer 32 can be used as a growth surface so that deposited semiconductor material thereon.On the one hand, after the LED layer was formed on this silicon carbide layer 32, this can remove silicon carrying substrate 42 and this silicon layer 38 so that expose this conductibility diamond layer.Then a support substrates and/or reflector can be arranged on this diamond layer, as described herein.
In addition, at aforementioned content, among certain embodiments of the invention, can aluminium nitride replace this silicon carbide layer 32 and aluminium nitride is arranged between this silicon layer 38 and this diamond layer 36.In this embodiment, available diamond (that is carbon) or silicon fades to an aln layer.One of them example of exercisable gradual change technology show ald (Atomic Layer Deposition, ALD).Use this technology, the sandwich construction that changes material concentration can be final material by parent material gradual change (layer gradual change).For example, silicon layer is an initial layers, can make a part of aluminium nitride and silicon common deposited, then continues in the layer one, and two partly aluminium nitride can be jointly and siliceous deposits, so analogizes, and has the layer structure that approximate equality is distributed with silicon and aluminium nitride up to generation one.This gradual change manufacture method produces a super lattice.This technology can further be used to be converted among the manufacture method of aluminium nitride by diamond.Other semi-conducting materials can then join among this aluminium nitride such as gallium nitride or the like.On the one hand, this aluminium nitride can be do not have brilliant and at other nitrogen materials as a resilient coating.
Diamond material has excellent thermal conduction characteristic, makes diamond material become the ideal material that is integrated in such as among the semiconductor device such as LED.In semi-conducting material, transfer to the therefore acceleration of hot transfer rate of diamond material by semi-conducting material.It should be noted that the present invention is limited among the specific heat transfer theory.In itself, in one aspect of the present invention, but the speed of at least a portion by transfer of heat being entered and quickening to shift heat by a diamond layer from semiconductor device inside.Since the heat conduction property of diamond excellence, heat apace horizontal transmission by diamond layer and the edge that arrives semiconductor device.The heat at edge can arrange faster loose among air or row loose to around radiator or the structures such as bracing frame of semiconductor device among.In addition, having most of area is exposed to diamond layer among the air and will arranges the heat that is integrated with the device of this diamond layer that looses more quickly.Since the heat conductivity of diamond greater than one with the semiconductor layer of this diamond layer thermal coupling or the heat conductivity of other structures, so this diamond layer becomes one heat sink.Therefore, this diamond layer has been drawn the heat that is produced in this semiconductor layer, and these heats loose outside this semiconductor device side by side with the landscape mode propagation.The mode that this kind quickens hot transfer rate can cause semiconductor device to have lower operational temperature.In addition, semiconductor device is not only cooled off in the acceleration of hot transfer rate, more can be reduced in the heat load that is positioned near the many electronic components of this semiconductor device on the space.
, the part of diamond layer can be exposed among the air aspect some in the present invention.This kind exposed state can be limited in and be limited in the edge that only exposes the diamond layer in some example; Perhaps can expose the surface area of this diamond layer vast scale, for example expose a wherein side of diamond layer.In this regard, at least a portion is by transferring to airborne mode with heat from the diamond layer, and the heat that can reach semiconductor device is removed the acceleration effect of speed.For example, diamond material, for example (Diamond-like Carbon DLC) etc., even if in the temperature that is lower than 100 ℃, also has excellent thermal emissivity characteristic to class brill carbon, so diamond material energy direct radiation heat is in air.Contain semiconductor device and be better than thermal radiation in the thermal conductivity of interior most other materials.Therefore, semiconductor device can conduct heat to class and bore carbon-coating, and heat is bored horizontal transmission in the carbon-coating in class, and then along class bore the edge of carbon-coating or the surface that other expose with heat radiation among air.Because class is bored the high-termal conductivity and the high-heating radiation of carbon, transferring to airborne heat transfer by class brill carbon can be greater than transferred to airborne heat transfer by semiconductor device.In addition, boring the heat transfer of carbon-coating by semiconductor device to class can be greater than by the heat transfer of semiconductor device to air.Therefore, class is bored carbon-coating and be can be used as the speed of acceleration from this semiconductor layer removal heat, and feasible heat transfer by class brill carbon-coating is higher than the heat transfer of semiconductor itself or is higher than by semiconductor to airborne heat transfer.
As above advised, can use various diamond materials to come semiconductor device is provided the accelerating performance of heat transfer.The example of this class diamond material can comprise and be not subject to diamond, class bore carbon, non-crystal diamond with and in conjunction with or the like.It should be noted that any natural or rhinestone material that can be used for semiconductor device is dispelled the heat is all within category of the present invention.
It should be noted that following narration is the discussion about the suitable generality of diamond deposition technique, these diamond deposition techniques can or may not necessarily be used in specific diamond layer or application, and these diamond deposition techniques can be widely between various different aspects of the present invention.Generally speaking, available various known method forms diamond, and these methods comprise various gas phase deposition technologies.Can use any known gas phase deposition technology to form the diamond layer.Although can use any method close with product with the vapour deposition process characteristic to form diamond, modal gas phase deposition technology comprises chemical vapour deposition (CVD) and physical vapour deposition (PVD).On the one hand, can use chemical vapour deposition technique, for example hot filament, microwave plasma, oxyhydrogen flame (Oxyacetylene Flame), RF chemical vapour deposition (CVD), laser chemical vapor deposition, laser come off, with configuration diamond coating manufacture method (Conformal Diamond Coating Processes), Metalorganic chemical vapor deposition (Metal-Organic CVD, MOCVD) and technology such as direct-current arc technology.Typical chemical deposition technique use gaseous reactant is with diamond or class brill material with carbon element is deposited as an one deck structure or a membrane structure.Aforementioned gas can comprise the carbonaceous material that (approximately is less than 5%) on a small quantity, for example with the methane of diluted in hydrogen.The technical field of the invention those skilled in the art understand the equipment and the condition of various chemical vapour deposition (CVD) manufacture methods, also understand the manufacture method that is specially adapted to boron nitride layer.On the other hand, can use physical gas phase deposition technology, for example sputter, cathode arc and thermal evaporation or the like.In addition, can use specific sedimentary condition to bore institute's deposition materials such as carbon, non-crystal diamond or pure diamond cut type attitude really to adjust class.It should be noted that high temperature can reduce the quality such as many semiconductor device such as light-emitting diodes.Must be meticulously so that can guarantee diamond deposit in the low temperature mode, the problem of avoiding diamond when deposition, to damage thus.For example, if semiconductor includes indium nitride, can use at most 600 ℃ depositing temperature.In the example of gallium nitride, arrive about 1000 ℃ of thermal stabilitys that all can keep layer structure at most.In addition, the method for transfer of the heat of excessive interference diamond layer or semiconductor device light-emitting area is not fixed in preformed sandwich construction on the semiconductor layer or the support substrates of semiconductor layer by modes such as hard solder (Braze), gummed or applyings.
Can on the growing surface of a substrate, form deposition quality and the minimizing sedimentation time of the nucleation of selecting for use (Nucleation) reinforced layer to promote the diamond layer.Particularly, can form a diamond layer by the mode that deposits suitable nucleus, for example, deposition one diamond nucleus on a diamond growth surface of a substrate then makes this nucleus growth become a film or layer structure by gas phase deposition technology.In one aspect of the present invention, the nucleation reinforced layer that can be coated with a thin shape on this substrate is to strengthen the growth of diamond layer.Then the diamond nucleus is seated on this nucleation reinforced layer, and carries out the growth manufacture method of diamond layer by chemical vapour deposition (CVD).
The technical field of the invention those skilled in the art can know the various suitable material that can be used as the nucleation reinforcement material.In one aspect of the present invention, this nucleation reinforcement material can be one be selected from metal, metal alloy, metallic compound, carbide, carbide former (Carbide Former) with and combination.Carbide forms examples of material and can be tungsten (W), tantalum (IA), titanium (Ti), zirconium (Zr), chromium (Cr), molybdenum (Mo), silicon and manganese (Mn).In addition, the example of carbide can comprise tungsten carbide (WC), carborundum, titanium carbide (TiC), zirconium carbide (ZrC) with and combination.
When using, this nucleation reinforced layer is that a layer structure that enough approaches is so that it can influence the heat conductivity of this diamond layer sharply.In one aspect of the present invention, the thickness of this nucleation reinforced layer can be less than about 0.1 micron (μ m).In the present invention on the other hand, this thickness can be at least less than about 10 nanometers (nm).In another aspect of the invention, the thickness of this nucleation reinforced layer can be less than about 5 nanometers.In the present invention on the other hand, the thickness of this nucleation reinforced layer can be less than about 3 nanometers.
Can make ins all sorts of ways is increased in diamond quality by the nucleation surface of the formed diamond layer of gas phase deposition technology.For example, can when the stage early of diamond deposition, reduce methane flow and increase the quality that total gas pressure is promoted diamond grains.Such measure can reduce the resolution ratio of carbon, and can increase hydrogen atom concentration.Therefore, will make very a high proportion of carbon with sp3 bond configuration status deposition, and the quality that can promote formed diamond nucleus.In addition, can increase the nucleation rate of diamond grains so that the space between the minimizing diamond grains.The method of increase diamond grains nucleation rate can comprise and be not restricted to following example: providing an an amount of back bias voltage to this growing surface, approximately is 100 volts usually; With meticulous diamond glue or diamond powder polishes this growing surface, this meticulous diamond glue or powder can partly reside in this growing surface; And implant as carbon, silicon, chromium, manganese, titanium, vanadium, zirconium, tungsten, molybdenum, tantalum and similar ion by the physical vapour deposition (PVD) or the manufacture method of plasma assist type chemical vapour deposition (CVD) (PECVD), come the composition on control growing surface.The enforcement temperature of physical vapour deposition (PVD) manufacture method generally is lower than the temperature of chemical vapour deposition (CVD) manufacture method, and can be lower than about 200 ℃ (about 150 ℃) in some example.Other methods of promoting the diamond nucleation are conspicuous for the technical field of the invention those skilled in the art.
In one aspect of the present invention, this diamond layer can be the together kenel of configuration diamond layer (conformal diamond layer).Can pass through various substrates widely, for example comprise Non-planar substrates, implement with configuration diamond coating manufacture method.Can have many advantages with configuration diamond coating manufacture method than traditional diamond film manufacturing method.Be coated with the configuration diamond and be arranged to can be used for comprise nonplanar substrate on the quite multiple substrate.Can anticipate in growing surface by the diamond growth conditions of not utilizing bias voltage and form a carbon film.Diamond growth conditions can be tradition and is suitable for the chemical vapor deposition conditions of diamond and does not use bias voltage.Therefore, formed carbon film is mostly less than the thickness of 100 dusts.Pretreatment steps can about 200 ℃ to about 900 ℃ growth temperature, and preferred low temperature is about below 500 ℃.Need not any particular theory, the carbon film as be less than in short time of one hour and form, and this carbon film is that a kind of hydrogen end (Hydrogen-terminated) does not have brilliant carbon.
After formation should approach carbon film, this growing surface can then form an isomorphism type diamond layer under diamond growth conditions.This diamond growth conditions can be the condition of common use traditional chemical vapour deposition formula diamond growth mode.Yet, be different from conventional diamond film growth, be a kind of by the diamond film that above-mentioned pretreatment steps produced with the configuration diamond film.In addition, the diamond film phase of generally need not fermenting is promptly roughly beginning growth on the entire substrate.Moreover, can grow into the diamond film that does not have crystal boundary at about 80nm with being essentially continuity of interior thickness.The diamond layer that the diamond layer that does not have crystal boundary is in fact compared crystal boundary can more effectively dispel the heat.
Can use various technology to make a diamond layer have conductibility.The technical field of the invention those skilled in the art can understand these technology.For example, can mix various impurity among the lattice of this diamond layer.These impurity can comprise silicon, boron, phosphorus, nitrogen, lithium, aluminium, gallium or the like.In a particular aspects, for example, this diamond layer can be mixed with boron.Above-mentioned impurity also can comprise metallic particles, and these metallic particles mix in the mode of not interfering this semiconductor device among the lattice, for example mix in the mode that does not hinder lumination of light emitting diode.
For some diamond layer, particularly those are about to be formed with the diamond layer of semiconductor layer, and it is useful creating a growth substrates and making lattice difference row's structure (for example being essentially the structure of monocrystal) that this semi-conducting material can be minimum be formed on this growth substrates.Being essentially between the growing surface of monoclinic crystal structure and the semi-conducting material has powerful bond effect, therefore utilizes the growing surface that is essentially monoclinic crystal structure can promote to drop to lattice difference row's situation minimum.In one aspect of the present invention, this kind substrate comprises a diamond layer that is essentially monoclinic crystal structure, is coupled with a silicon carbide layer that is essentially monoclinic crystal structure on this diamond layer.The characteristic that this carburization zone is essentially monoclinic crystal structure help one for example semiconductor such as gallium nitride or aluminium nitride be deposited as a monocrystal in fact.In addition, to this silicon carbide layer and by the epitaxial relationship of this diamond layer, increased the heat conductivity of diamond layer, therefore promoted the thermal diffusivity of semiconductor device to this semiconductor layer by this diamond layer.
Can use various possible methods to build the synthetic substrate of this kind diamond/carborundum.Any these class methods all are considered to be and belong within the category of the present invention.For example, can create a substrate by the mode that a silicon single crystal wafer is gradually varied to a monocrystalline diamond layer on the one hand.In other words, this silicon wafer can be by silicon being converted into carborundum and then gradating and be diamond gradually.The technology of gradual change manufacture method is discussed further in the applicant coexists the 11/809th, No. 806 application for a patent for invention case of the U.S. of United States Patent (USP) intra-office examination, and this invention is integrated in herein with for referencial use.Other another material of on a material, growing, or the method that two materials are mutually combined, all be recorded in the U.S. the 11/809th that the applicant coexists and examines, No. 718, the 11/809th, No. 721, the 61/187th, No. 557, the 61/230th, No. 055 and the 61/259th, No. 948 application for a patent for invention cases, these inventions also are integrated in herein with as a reference.Except above-mentioned the lattice difference is arranged minimized advantage, the diamond layer that is essentially monocrystal can be transparent and printing opacity, in order to construction one luminous semiconductor device, and for example light-emitting diode and laser diode.
Thicken the diamond layer or be provided with a support substrates to this diamond layer after, can remove this silicon wafer by the known the whole bag of tricks of any the technical field of the invention those skilled in the art.The structure of last output comprises that then one is essentially the diamond layer of monoclinic crystal structure, with extensional mode coupling one silicon carbide layer that is essentially monoclinic crystal structure is arranged on this diamond layer.Then use the known method of any the technical field of the invention those skilled in the art, on this silicon carbide layer, deposit the semiconductor material with extensional mode.In one aspect of the present invention, this deposition method for preparing can occur among the gradual change manufacture method, and this gradual change manufacture method is similar to and forms the employed gradual change technology of diamond layer on this silicon wafer.
Some aspect according to the present invention, this diamond layer can have any thickness that dispels the heat for semiconductor device.The thickness of diamond layer can change according to the difference of application and semiconductor device structure.For example, bigger radiating requirements will need thicker diamond layer.The diamond layer thickness also can change to some extent along with the difference of employed material in this diamond layer.In other words, the thickness of a diamond layer can be by about 10 to about 50 microns on the one hand.In another example, the thickness of a diamond layer can be equal to or less than about 10 microns, and in the another example, a diamond layer thickness can be by about 50 microns to about 100 microns, and in another example, the thickness of a diamond layer can be greater than about 50 microns.In another example, a diamond layer can be no support force diamond layer.
Can be according to the purposes of the deposition process of silicon carbide layer and semiconductor device and have different thickness in some aspect according to the present invention, this silicon carbide layer.In some aspects, this silicon carbide layer can be only enough thick in the lattice direction that can arrange the layer structure that is deposited on the silicon carbide layer.In other respects, thicker silicon carbide layer is comparatively favourable.Change according to these, the thickness of this silicon carbide layer can be equal to or less than about 1 micron on the one hand.On the other hand, the thickness of this silicon carbide layer can be equal to or less than about 500 nanometers.Aspect another, the thickness of this silicon carbide layer can be equal to or less than about 1 nanometer.Again on the other hand, the thickness of this silicon carbide layer can be greater than about 1 micron.
As previously mentioned, some aspect according to the present invention, this semiconductor device comprises multi-link semiconductor layer to one or more diamond layers.These semiconductor layers can be connected to a diamond layer by the whole bag of tricks that the technical field of the invention those skilled in the art are known.In one aspect of the present invention, can on a diamond layer, deposit one or more semiconductor layers, perhaps as previously mentioned, can be coupled to the one or more semiconductor layers of deposition on the silicon carbide layer of diamond layer one.
Can utilize the known various technology of the technical field of the invention those skilled in the art for example to deposit semi-conductor layer on the substrate of silicon carbide layer one.One of them example of this class technology is Metalorganic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, a MOCVD) manufacture method.
This semiconductor layer can comprise any being applicable to and form electronic device, semiconductor device or the material of other similar devices.Many semiconductors are based on silicon, gallium, indium and germanium.Yet, the material that is applicable to semiconductor layer can comprise and be not restricted to silicon, carborundum, germanium silicide, GaAs, gallium nitride, germanium, zinc sulphide, gallium phosphide, gallium antimonide, phosphorus arsenic indium gallium, aluminum phosphate, aluminium arsenide, Aluminum gallium arsenide, gallium nitride, boron nitride, aluminium nitride, indium arsenide, indium phosphide, indium antimonide, indium nitride with and composition thereof.In another particular aspects, for example, this semiconductor layer can comprise silicon, carborundum, GaAs, gallium nitride, gallium phosphide, aluminium nitride, indium nitride, indium gallium nitride, aluminum gallium nitride or its mixture.
Among some extra embodiment, can form such as based on GaAs, gallium nitride, germanium, boron nitride, aluminium nitride, indium substrate material with and mix or the like non-siliceous semiconductor device.In another embodiment, this semiconductor layer can comprise gallium nitride, indium gallium nitride, indium nitride with and composition thereof.In a particular aspects, this semi-conducting material is a gallium nitride.In another particular aspects, this semi-conducting material is an aluminium nitride.All the other spendable semi-conducting materials comprise aluminium oxide, beryllium oxide, tungsten, molybdenum, c-Y
2O
3, (Y
0.9La
0.1)
2O
3, c-Al
23O
27N
5, c-MgAl
2O
4, t-MgF
2, graphite with and composition thereof.Will be appreciated that this semiconductor layer can comprise any known semiconductor material, and should not be limited to these materials described in the literary composition.In addition, semi-conducting material can be any known structural arrangements, for example is not restricted to cube zincblende (zincblende or sphalerite) structure, hexagonal crystal system wurtzite structure (Wurtzitic), rhombohedron structure (rhombohedral), graphite-structure, disorderly layer (Turbostratic) structure, pyrolysis (Pyrolytic) structure, hexgonal structure (Hexagonal), no crystal structure or its mixing.As previously mentioned, can utilize the known method of the technical field of the invention those skilled in the art to deposit this semiconductor layer 14.Can use various known CVD (Chemical Vapor Deposition) method to deposit these semiconductor layers, and allow these deposition method for preparing in a gradual changed method, to carry out.In addition, can between described two deposition steps, carry out a surface treatment and supply to carry out follow-up deposition step so that a smooth surface can be provided.Can be by any known method, methods such as for example chemical etching, polishing, skin buff polishing (Buffing) and grinding are carried out aforementioned surfaces and are handled manufacture method.
In one aspect of the present invention, at least one semiconductor layer can be gallium nitride.Gallium nitride semiconductor layers helps building light-emitting diode or other semiconductor device.In some example, with carborundum or other substrates gradate for this semiconductor layer be useful.For example, can pass through the deposition concentration of nitrogen concentration and the change gallium and the indium of fixedly vapour deposition, make gallium: the concentration ratio of indium was gradually varied to 1: 0 by 0: 1, and thus an indium nitride Semiconductor substrate being gradated is a gallium nitride semiconductor layers.In other words, the supply of gallium and indium changes so that when the concentration of indium reduced, the concentration of gallium increased.This function that gradates is for significantly reducing viewed lattice inconsistent phenomenon when gallium nitride directly is formed at indium nitride.
In the present invention on the other hand, at least one semiconductor layer can be an aln layer.This aln layer can deposit on the substrate by the known any method of the technical field of the invention those skilled in the art.As above-mentioned gallium nitride layer, gradating manufacture method and can promote the functional of semiconductor device between two semiconductor layers.For example, can aluminium nitride be formed on the indium nitride Semiconductor substrate by the mode that nitride indium layer is gradated for aln layer on the one hand.This kind gradates manufacture method and can comprise for example by fixing nitrogen concentration that is deposited and the deposition concentration that changes indium and aluminium, make an indium: the concentration ratio of aluminium was gradually varied to 0: 1 by 1: 0, and thus an indium nitride Semiconductor substrate being gradated is an aluminum nitride semiconductor layer.This manufacture method that gradates significantly reduces viewed lattice inconsistent phenomenon when aluminium nitride directly is formed at indium nitride.Can between described any two deposition steps, carry out a surface treatment and supply to carry out follow-up deposition step so that a smooth surface can be provided.Can be by any known method, methods such as for example chemical etching, polishing, skin buff polishing and grinding are carried out aforementioned surfaces and are handled manufacture method.
As previously mentioned, a n type electrode is incorporated into a LED device with the usefulness as electrical contact semiconductor layer.The technical field of the invention those skilled in the art have understood the use and the formation method of many n type electrodes, therefore will no longer discuss herein.
Example
Following example shows the various technology of making a semiconductor device of the present invention.Yet, it should be noted that following example only is demonstration or shows principle of the present invention.Do not violating under category of the present invention and the spirit, the technical field of the invention those skilled in the art can envision various modifications and different combination, method and systems.The claim of being enclosed is to desire to contain these modifications and layout.Therefore, though foregoing has been described in detail the present invention, following example provides further detailed description with the many embodiment of the present invention.
Example 1
Can be according to what follows forming semi-conductive substrate:
Obtain a silicon single crystal wafer, this silicon single crystal wafer is soaked among the potassium hydroxide, and the mode of utilizing distilled water to carry out the ultrasonic wave cleaning cleans silicon single crystal wafer, remove non-monocrystalline silicon and external debris on it.The mode of any bias voltage is not provided by this silicon wafer is exposed to the chemical vapour deposition (CVD) state, and an isomorphism type is set on the clean surface of this silicon wafer does not have brilliant carbon coating layer.After carbonization is carried out on this surface, under 800 ℃, under the condition of 1% methane and 99% hydrogen, carry out about 30 minutes non-crystal diamond deposition method for preparing.Then can be under 900 ℃ condition, utilize hydrogen or fluorine gas to carry out about 60 minutes processing manufacture method and remove this and do not have brilliant carbon coating layer.Remove and then expose an epitaxy silicon carbide layer after the no brilliant carbon coating layer, this silicon carbide layer then is once between silicon wafer and do not have between the brilliant carbon coating layer.The thickness of this silicon carbide layer is approximately 10 nanometers.
Then using methane to carry out chemical vapour deposition (CVD) about 10 hours, is 10 microns transparent diamond coating layer with deposition one thickness on this silicon carbide layer.After 10 hours, this methane of supplying with originally changes sustainable supply silane (SiH into
4) about 10 minutes to deposit the about 1 micron silicon layer of a layer thickness.
Wafer is in conjunction with a silicon carrier substrate on this 1 micron thickness silicon layer, and this silicon carrier substrate has a silica surface in conjunction with this silicon layer.After the wafer bonding manufacturing method, by utilizing (the HF+3HNO of a hydrofluoric acid, three parts of nitrous acid and a water
2+ H
2O) solution is etched with and removes this silicon single crystal wafer, and exposes silicon carbide layer.Be recorded among the 4th, 981, No. 818 patent cases of the U.S. about the details of etching silicon material, this patent is recorded in herein for your guidance.
Example 2
Semiconductor device can be complied with following manufacture method manufacturing:
Can obtain semi-conductive substrate according to example 1.By the Metalorganic chemical vapor deposition manufacture method and utilize hydrogenation gallium (GaH
3) and the ammonia material, deposition one gallium nitride semiconductor layers on the silicon carbide layer of this exposure.
Certainly, will be appreciated that foregoing is only for explanation the application of the principles of the present invention.Under the prerequisite of category of the present invention and spirit, the technical field of the invention those skilled in the art can make multiple modification and different configurations, and the claimed scope of patent then is intended to contain these modification and different configurations.Therefore, when the details that is considered to be the most practical and preferred embodiment among the present invention has at present been disclosed as above, for the technical field of the invention those skilled in the art, can make and be not subject to the multiple change that has comprised size, material, profile, form, function, method of operation, assembling and used according to the notion that is proposed herein and principle.
Claims (20)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/686,288 | 2010-01-12 | ||
| US12/686,288 US7867802B2 (en) | 2007-05-31 | 2010-01-12 | Diamond LED devices and associated methods |
| US12/755,034 | 2010-04-06 | ||
| US12/755,034 US8309967B2 (en) | 2007-05-31 | 2010-04-06 | Diamond LED devices and associated methods |
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| Publication Number | Publication Date |
|---|---|
| CN102130243A true CN102130243A (en) | 2011-07-20 |
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| CN2010105551093A Pending CN102130243A (en) | 2010-01-12 | 2010-11-19 | Light emitting diode device, method of manufacturing the same, and semiconductor device |
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| CN (1) | CN102130243A (en) |
| TW (1) | TW201133945A (en) |
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| TWI466347B (en) * | 2012-07-13 | 2014-12-21 | Nat Univ Chung Hsing | A light-emitting element having a high heat dissipation characteristic, and a light-emitting element manufactured by the method |
| TWI756022B (en) * | 2021-01-13 | 2022-02-21 | 國家中山科學研究院 | Nitride semiconductor device with ultra-nanocrystalline diamond layer electrode structure |
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| TW201133945A (en) | 2011-10-01 |
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