CN101261892A - Zinc Oxide Based Low Voltage Thin Film Varistors - Google Patents
Zinc Oxide Based Low Voltage Thin Film Varistors Download PDFInfo
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- CN101261892A CN101261892A CNA2008100614402A CN200810061440A CN101261892A CN 101261892 A CN101261892 A CN 101261892A CN A2008100614402 A CNA2008100614402 A CN A2008100614402A CN 200810061440 A CN200810061440 A CN 200810061440A CN 101261892 A CN101261892 A CN 101261892A
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Abstract
Description
技术领域technical field
本发明涉及低压电子线路的保护元件,特别地,涉及一种基于氧化锌的低压薄膜压敏电阻器。The invention relates to a protection element for a low-voltage electronic circuit, in particular to a zinc oxide-based low-voltage film varistor.
背景技术Background technique
氧化锌压敏电阻器是一种以氧化锌为主体的多晶半导体陶瓷元件,具有通流容量大、响应速度快、无续流、无极性等优点。但是目前商用的压敏电阻的阈值电压都是固定的,例如AVX公司的O402型片式压敏电阻器有5.6V、9V、14V和18V等规格。不同的电路往往需要不同的压敏电阻器进行保护,给实际使用带来不便。目前还没有研制出阈值电压可调的氧化锌低压压敏电阻器。Zinc oxide varistor is a polycrystalline semiconducting ceramic element with zinc oxide as the main body, which has the advantages of large flow capacity, fast response speed, no freewheeling, and nonpolarity. However, the threshold voltages of commercially available varistors are all fixed. For example, the O402 chip varistors of AVX Company have specifications of 5.6V, 9V, 14V and 18V. Different circuits often require different varistors for protection, which brings inconvenience to actual use. Zinc oxide low-voltage varistors with adjustable threshold voltage have not been developed yet.
发明内容Contents of the invention
本发明的目的是针对现有技术的不足,提供一种基于氧化锌的低压薄膜压敏电阻器。本发明可以通过选择不同的电极(即引脚)获得不同的阈值电压,以适应不同保护电压的需要。The object of the present invention is to provide a zinc oxide-based low-voltage film varistor for the deficiencies of the prior art. In the present invention, different threshold voltages can be obtained by selecting different electrodes (that is, pins), so as to meet the needs of different protection voltages.
本发明的目的是通过以下技术方案来实现的:一种基于氧化锌的低压薄膜压敏电阻器,该压敏电阻器由两个或多个由金属电极-氧化锌薄膜-金属电极构成的基本单元串连而成。此外,还包括分别与各金属电极相连的引脚。所述柱状氧化锌薄膜为高度c轴取向的柱状晶体薄膜;所述金属电极为金属铝膜。The purpose of the present invention is achieved by the following technical solutions: a zinc oxide-based low-voltage film varistor, which consists of two or more basic metal electrodes-zinc oxide film-metal electrodes Units are connected in series. In addition, pins connected to the metal electrodes are also included. The columnar zinc oxide film is a columnar crystal film with a high c-axis orientation; the metal electrode is a metal aluminum film.
本发明的有益效果是:本发明只要简单地控制单元内薄膜的厚度,使得厚度小于特定制备条件下氧化锌的晶粒尺寸就可以了,而整个压敏电阻的阈值电压的可由串连单元的数目进行简单控制。The beneficial effects of the present invention are: the present invention only needs to simply control the thickness of the film in the unit, so that the thickness is less than the grain size of zinc oxide under specific preparation conditions, and the threshold voltage of the entire piezoresistor can be determined by the The number is easily controlled.
附图说明Description of drawings
图1是本发明基于氧化锌的低压薄膜压敏电阻器的基本单元的剖视图;Fig. 1 is the cross-sectional view of the basic unit of the zinc oxide-based low-voltage film varistor of the present invention;
图2是本发明实施例由四个基本单元串连构成的基于氧化锌的低压薄膜压敏电阻器的剖视图;2 is a cross-sectional view of a zinc oxide-based low-voltage film varistor composed of four basic units connected in series according to an embodiment of the present invention;
图3是图2所示基于氧化锌的低压薄膜压敏电阻器的阈值电压与层数之间的关系图。FIG. 3 is a graph showing the relationship between the threshold voltage and the number of layers of the ZnO-based low-voltage thin film varistor shown in FIG. 2 .
具体实施方式Detailed ways
本发明的氧化锌低压压敏电阻器由两个或多个金属电极-氧化锌薄膜-金属电极组成的基本单元串连而成,其中的氧化锌薄膜为高度c轴取向的柱状晶体薄膜。一个金属电极-氧化锌薄膜-金属电极的基本单元如图1所示,由上电极1、柱状氧化锌薄膜2、下电极3构成。The zinc oxide low-voltage varistor of the present invention is composed of two or more basic units consisting of metal electrodes-zinc oxide film-metal electrodes connected in series, wherein the zinc oxide film is a columnar crystal film with a high c-axis orientation. The basic unit of a metal electrode-zinc oxide film-metal electrode is shown in Figure 1, which consists of an
一般的氧化锌压敏电阻由金属-氧化锌-金属构成。氧化锌晶粒与晶粒之间存在晶界。由于表面能带弯曲,导致晶粒界面处形成一个背靠背的肖特基势垒对,势垒击穿即导致压敏电阻现象。普通的压敏电阻器中氧化锌层的厚度较大,因此氧化锌薄膜厚度方向上可以看成许多晶粒的串联,因此压敏电阻器的阈值电压较高。但是如果其中的氧化锌薄膜为c轴取向的柱状薄膜,那么厚度方向内只有一个晶粒,由此可以得到很低的阈值电压。假定这样一个基本单元的压敏阈值电压为Vm,那么,如果把两个这样的单元串连,就可以获得阈值电压2倍于Vm的压敏电阻,依此类推,如果把N个这样的单元串连,就可以获得阈值电压N倍于Vm的压敏电阻。Typical zinc oxide varistors are composed of metal-zinc oxide-metal. There are grain boundaries between zinc oxide grains. Due to the bending of the surface energy band, a back-to-back Schottky barrier pair is formed at the grain interface, and the breakdown of the barrier leads to the varistor phenomenon. In ordinary varistors, the thickness of the zinc oxide layer is relatively large, so the thickness direction of the zinc oxide film can be regarded as a series connection of many crystal grains, so the threshold voltage of the varistor is relatively high. However, if the zinc oxide film is a c-axis-oriented columnar film, there is only one crystal grain in the thickness direction, so that a very low threshold voltage can be obtained. Assuming that the varistor threshold voltage of such a basic unit is V m , then, if two such units are connected in series, a varistor whose threshold voltage is twice as high as V m can be obtained, and so on. If N such By connecting the cells in series, a varistor with a threshold voltage N times higher than V m can be obtained.
实施例Example
参照附图2,我们制作了一个4单元的氧化锌薄膜压敏电阻器。氧化锌薄膜通过反应直流磁控溅射法制备,沉积时衬底温度为400℃,XRD测试显示此沉积条件下的氧化锌薄膜为柱状膜,膜厚为80nm。上、下电极为直流磁控溅射沉积的金属铝膜,厚度各为50nm,每个金属电极上分别连接一个引脚4、5、6、7、8。Referring to Figure 2, we have fabricated a 4-unit zinc oxide film varistor. The zinc oxide thin film was prepared by reactive direct current magnetron sputtering method, and the substrate temperature was 400°C during deposition. XRD test showed that the zinc oxide thin film under this deposition condition was a columnar film with a film thickness of 80nm. The upper and lower electrodes are metal aluminum films deposited by DC magnetron sputtering, each with a thickness of 50nm, and each metal electrode is connected to a
不同电极对之间测试得到的阈值电压如表1所示。可见阈值电压与电极之间的单元数目有简单的线性关系。拟合结果表明每增加一个单元,阈值电压约增加3.3伏,见图3。The threshold voltages tested between different electrode pairs are shown in Table 1. It can be seen that the threshold voltage has a simple linear relationship with the number of cells between the electrodes. The fitting results show that the threshold voltage increases by about 3.3 volts for each additional unit, as shown in Figure 3.
表1Table 1
Claims (4)
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| CNA2008100614402A CN101261892A (en) | 2008-04-30 | 2008-04-30 | Zinc Oxide Based Low Voltage Thin Film Varistors |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968015B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Light-emitting diode device for voltage switchable dielectric material having high aspect ratio particles |
| WO2012071051A1 (en) * | 2009-12-04 | 2012-05-31 | Shocking Technologies, Inc. | Granular non- polymeric varistor material, substrate device comprising it and method for forming it |
| US8206614B2 (en) | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
| US9208931B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
-
2008
- 2008-04-30 CN CNA2008100614402A patent/CN101261892A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968015B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Light-emitting diode device for voltage switchable dielectric material having high aspect ratio particles |
| US7968010B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Method for electroplating a substrate |
| US7968014B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
| US8206614B2 (en) | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
| US9208931B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
| WO2012071051A1 (en) * | 2009-12-04 | 2012-05-31 | Shocking Technologies, Inc. | Granular non- polymeric varistor material, substrate device comprising it and method for forming it |
| CN102741947A (en) * | 2009-12-04 | 2012-10-17 | 肖克科技有限公司 | Granular non-polymeric varistor material, substrate device comprising it and method for forming it |
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