Gong et al., 2026 - Google Patents

An 18–50-GHz Phased-Array CMOS Transceiver

Gong et al., 2026

Document ID
8999071270209047691
Author
Gong J
Deng W
Zhao F
Jia H
Zheng W
Gu L
Yao S
Li D
Wu H
Wang Z
Chi B
Publication year
Publication venue
IEEE Transactions on Microwave Theory and Techniques

External Links

Snippet

This article presents a 2-element 18–50-GHz multiband phased-array transceiver supporting 5G frequency range 2 (FR2) bands (n257/n258/n259/n260/n261/n262) and FR2 nonterrestrial network (NTN) bands (n510/n511/n512). The design incorporates a frequency …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/26—Circuits for superheterodyne receivers
    • H04B1/28—Circuits for superheterodyne receivers the receiver comprising at least one semiconductor device having three or more electrodes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q1/00—Details of, or arrangements associated with, aerials
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors

Similar Documents

Publication Publication Date Title
Yi et al. A 24–29.5-GHz highly linear phased-array transceiver front-end in 65-nm CMOS supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G new radio
Pang et al. A 28-GHz CMOS phased-array beamformer utilizing neutralized bi-directional technique supporting dual-polarized MIMO for 5G NR
Kim et al. A 28-GHz CMOS Direct Conversion Transceiver With Packaged $2\times 4$ Antenna Array for 5G Cellular System
EP3804131B1 (en) Wideband low noise amplifier (lna) with a reconfigurable bandwidth for millimeter-wave 5g communication
Meghdadi et al. A 6-bit CMOS phase shifter for $ S $-band
Abdelhalem et al. Tunable CMOS integrated duplexer with antenna impedance tracking and high isolation in the transmit and receive bands
Zhao et al. A band-shifting millimeter-wave T/R front-end using inductance-mutation transformer technique for multiband phased-array transceivers
Gao et al. A 20–42-GHz IQ receiver in 22-nm CMOS FD-SOI with 2.7–4.2-dB NF and− 25-dBm IP1dB for wideband 5G systems
Li et al. W-band scalable 2× 2 phased-array transmitter and receiver chipsets in SiGe BiCMOS for high data-rate communication
US10826457B2 (en) Broadband power amplifier and matching network for multi-band millimeter-wave 5G communication
CN111293985A (en) Dual Mode Frequency Multiplier
Guan et al. A fully integrated QPSK/16-QAM D-band CMOS transceiver with mixed-signal baseband circuitry realizing digital interfaces
CN112204894B (en) Radio frequency front-end circuit and mobile device
Zhu et al. A 10.56-GHz broadband transceiver with integrated T/R switching via matching network reuse and 0.3–2.1-GHz baseband in 28-nm CMOS technology
Zhao et al. W-band CMOS beamforming ICs and integrated phased-array antennas with 20+ Gb/s data rates
Kim et al. A Switchless, $ Q $-Band Bidirectional Transceiver in 0.12-$\mu $ m SiGe BiCMOS Technology
Hu et al. A reusable superheterodyne dual-band down-conversion mixer with hybrid linearity-enhanced technique for 5G non-contiguous multiband NR
Nam et al. A scalable 16-element and 45.5 dBm-EIRP D-band CMOS phased-array transceiver integrated with Antenna-in-Package for 6G communications
Baek et al. A large-scale, low-power, compact 5G mm-Wave phased-array transceiver in 45 nm RFSOI CMOS
Chen et al. A Frequency Reconfigurable Transceiver Front-End With Enhanced Out-of-Band-Rejection and High Phase Resolution for 5G mm-Wave Phased Arrays
Chen et al. A frequency reconfigurable phased-array front-end with enhanced image-rejection and high-resolution LO phase shifter for 5G FR2 n258/n260/n261 bands
Entesari et al. Rf cmos duplexers for frequency-division duplex radios: The most recent developments
Wen et al. Multi-band millimeter-wave circuits for spectrum aggregation in B5G era: A tutorial
Chen et al. A Compact Reconfigurable 24-29.5/38-43.5 GHz Phased Array Transceiver Front-End with Self-Interference Rejection and Wideband IF Supporting TDD/FDD Operation
Lin et al. Design of 22.6-29.5/30.4-43.5 GHz Dual-Band Low Power LNA with 2.6-3.8 dB NF for Millimeter-Wave 5G Applications in 28-nm CMOS