Tan et al., 2013 - Google Patents
Probing surface saturation conditions in alternating layer growth of CdSe/CdS core/shell quantum dotsTan et al., 2013
- Document ID
- 3375093493619160336
- Author
- Tan R
- Blom D
- Ma S
- Greytak A
- Publication year
- Publication venue
- Chemistry of Materials
External Links
Snippet
We monitor effective band gap energy shifts and free reagent concentration during the formation of CdS shells on CdSe nanocrystals to test the hypothesis that alternating addition of stoichiometric doses of precursors can effectively saturate surface sites and thereby …
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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