CN104536266B - A kind of dry film photoresist layered product - Google Patents

A kind of dry film photoresist layered product Download PDF

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CN104536266B
CN104536266B CN201510050337.8A CN201510050337A CN104536266B CN 104536266 B CN104536266 B CN 104536266B CN 201510050337 A CN201510050337 A CN 201510050337A CN 104536266 B CN104536266 B CN 104536266B
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acrylate
resist layer
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dry film
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CN104536266A (en
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李志强
李伟杰
严晓慧
周光大
林建华
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Hangzhou Foster Electronic Materials Co ltd
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Hangzhou First Applied Material Co Ltd
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Abstract

本发明公开了一种干膜抗蚀剂层压体,包括支撑层、涂覆于撑层上方的第一抗蚀剂层以及涂覆于第一抗蚀剂层上方的第二抗蚀剂层;所述第一抗蚀剂层的酸值为80~400 mgKOH/g,第二抗蚀剂层的酸值比第一抗蚀剂层酸值高2~41.2mgKOH/g。本发明采用不同酸值的双层结构的抗蚀剂,在抗蚀剂曝光显影后,形成良好的图形侧边形貌,未曝光的图形胶层能更好地除去。使其在印刷电路板、引线框架等的制造、半导体封装等的制造、金属的精密加工等领域中,作为刻蚀用或镀敷用的干膜抗蚀剂层压体材料,在图形曝光显影后,具有非常好的图形线条侧边形貌。The invention discloses a dry film resist laminate, comprising a support layer, a first resist layer coated on the support layer, and a second resist layer coated on the first resist layer ; The acid value of the first resist layer is 80-400 mgKOH/g, and the acid value of the second resist layer is 2-41.2 mgKOH/g higher than the acid value of the first resist layer. The present invention adopts resists of double-layer structure with different acid values, and after exposure and development of the resists, a good pattern side profile is formed, and the unexposed pattern adhesive layer can be better removed. It can be used as a dry film resist laminate material for etching or plating in the fields of the manufacture of printed circuit boards, lead frames, etc., the manufacture of semiconductor packages, etc. After that, it has a very good shape of the side of the graphic line.

Description

一种干膜抗蚀剂层压体A kind of dry film resist laminated body

技术领域technical field

本发明涉及一种可进行碱溶液显影的干膜抗蚀剂层压体。The present invention relates to a dry film resist laminate that can be developed with an alkaline solution.

背景技术Background technique

在印刷电路板、引线框架、半导体封装等的制造、BGA(Ball Grid Array)、CPS(Chip Size Package)等的封装中,干膜抗蚀剂层压体广泛用于刻蚀或电镀等过程的抗蚀剂材料。例如,在制造印刷电路板时,首先,在铜基板上层压干膜抗蚀剂层压体,用具有图形的掩模遮盖于干膜抗蚀剂层压体,进行曝光,图形曝光后,用显影液去除未曝光部位,再实施刻蚀或电镀处理而形成图形,最后用去除剂剥离去除固化部分,从而实现图形转移。Dry film resist laminates are widely used in processes such as etching and plating in the manufacture of printed circuit boards, lead frames, semiconductor packages, etc., and in the packaging of BGA (Ball Grid Array), CPS (Chip Size Package), etc. resist material. For example, when manufacturing a printed circuit board, first, a dry film resist laminate is laminated on a copper substrate, and the dry film resist laminate is covered with a patterned mask to expose it. After the pattern exposure, use The developer removes the unexposed parts, and then implements etching or electroplating to form a pattern, and finally removes the cured part with a remover, so as to realize pattern transfer.

近年来,随着电子设备向着轻薄短小的方向发展,其所搭载的印刷电路板、引线框架等图形的线条尺寸也越来越小,基板和已经形成图形的树脂组合物接触面积也处于变小的趋势,为了以更高良品率制造这种窄间距的线路图形,这就要求干膜抗蚀剂层压体具有良好的分辨率和侧边形貌。In recent years, with the development of electronic equipment in the direction of lightness, thinness and shortness, the line size of printed circuit boards, lead frames and other graphics mounted on it has become smaller and smaller, and the contact area between the substrate and the resin composition that has been patterned is also decreasing. In order to manufacture such narrow-pitch circuit patterns with a higher yield rate, it is required that the dry film resist laminate has good resolution and side profile.

但是,现有的技术是,在图形曝光、显影后,在未曝光的图形靠近曝光部分的侧边根部,由于线路过细造成冲洗死角等原因,容易出现碱液未能洗去的残胶,在后续的刻蚀或电镀,并最终除去固化后的抗蚀剂时,对应地,铜线条就形成外凸的毛刺和镀层往里凹的金属坑洞。在图形线条间隙更窄时,这种残胶越是严重,极端情况就是,线条之间的胶表面已除去,但线条之间,金属表面仍存在薄薄的一层残胶,分辨率无法提升。虽然通过提升抗蚀剂层的酸值,降低抗蚀剂中碱可溶性树脂的分子量等方法可以得到一些改善,但这些方法的使用也使得显影后图形线条的侧边形貌变差,变得不耐碱洗,线条棱角变得不分明。However, in the existing technology, after the pattern exposure and development, the unexposed pattern is close to the side root of the exposed part, due to reasons such as the dead angle of washing caused by the thin line, it is easy to have residual glue that cannot be washed away by lye. Subsequent etching or electroplating, and when the cured resist is finally removed, correspondingly, the copper lines form convex burrs and metal pits that are concave inward from the plating. When the gap between the graphic lines is narrower, the residual glue is more serious. In extreme cases, the glue surface between the lines has been removed, but there is still a thin layer of residual glue on the metal surface between the lines, and the resolution cannot be improved. . Although some improvements can be obtained by increasing the acid value of the resist layer and reducing the molecular weight of the alkali-soluble resin in the resist, the use of these methods also makes the side morphology of the graphic lines after development worse and becomes unsightly. Alkali washing resistance, the edges and corners of the lines become unclear.

发明内容Contents of the invention

本发明的目的在于针对现有技术的不足,提供一种干膜抗蚀剂层压体,其在印刷电路板、引线框架等的制造、半导体封装等的制造、金属的精密加工等领域中,作为刻蚀用或镀敷用的干膜抗蚀剂层压体材料,在图形曝光显影后,具有非常好的图形线条侧边形貌。The object of the present invention is to address the deficiencies in the prior art, and to provide a dry film resist laminate, which can be used in the fields of manufacture of printed circuit boards, lead frames, etc., semiconductor packaging, etc., metal precision machining, etc. As a dry film resist laminate material for etching or plating, after pattern exposure and development, it has very good pattern line side morphology.

本发明的目的是通过以下技术方案实现的:一种干膜抗蚀剂层压体,包括支撑层、涂覆于支撑层上方的第一抗蚀剂层以及涂覆于第一抗蚀剂层上方的第二抗蚀剂层;所述第一抗蚀剂层的酸值为80~400mgKOH/g,第二抗蚀剂层的酸值为82~441.2mgKOH/g,并且,第二抗蚀剂层的酸值比第一抗蚀剂层酸值高2~41.2mgKOH/g。The object of the present invention is achieved by the following technical solutions: a dry film resist laminate comprising a support layer, a first resist layer coated on the support layer and a first resist layer coated on the first resist layer The second resist layer above; the acid value of the first resist layer is 80-400mgKOH/g, the acid value of the second resist layer is 82-441.2mgKOH/g, and the second resist The acid value of the resist layer is 2-41.2 mgKOH/g higher than the acid value of the first resist layer.

进一步地,所述第一抗蚀剂层厚度为5~50微米,第二抗蚀剂层厚度为1-10微米。Further, the thickness of the first resist layer is 5-50 microns, and the thickness of the second resist layer is 1-10 microns.

进一步地,所述第一抗蚀剂层和第二抗蚀剂层由质量分数为45~70%的含羧基的碱可溶性聚合物、质量分数为15~45%的含有至少一个可聚合的不饱和键单体、质量分数为0.5~10%的光引发剂、质量分数为0.01~5%的添加剂组成。Further, the first resist layer and the second resist layer are composed of a carboxyl-containing alkali-soluble polymer with a mass fraction of 45-70%, a mass fraction of 15-45% of an alkali-soluble polymer containing at least one polymerizable The composition comprises a saturated bond monomer, a photoinitiator with a mass fraction of 0.5-10%, and an additive with a mass fraction of 0.01-5%.

进一步地,所述含羧基的碱可溶性聚合物由一种或多种含羧基的共聚单元单体,和一种或多种不含羧基基团的共聚单元单体按照任意配比共聚而得;所述含羧基的共聚单元单体选自衣康酸、巴豆酸、丙烯酸、甲基丙烯酸、马来酸半酯、顺丁烯二酸、反丁烯二酸、乙烯基乙酸及其酸酐等;所述不含羧基基团的共聚单元单体选自(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸十八酯、(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、聚乙二醇单(甲基)丙烯酸酯、聚丙二醇单(甲基)丙烯酸酯、(甲基)丙烯腈、(甲基)丙烯酸缩水甘油酯、N,N-二甲基(甲基)丙烯酸乙酯、N,N-二乙基(甲基)丙烯酸乙酯、N,N-二甲基(甲基)丙烯酸丙酯、N,N-二乙基(甲基)丙烯酸丙酯、N,N-二甲基(甲基)丙烯酸丁酯、N,N-二乙基(甲基)丙烯酸丁酯、(甲基)丙烯酰胺、N-羟甲基-丙烯酰胺、N-丁氧基甲基-丙烯酰胺、苯乙烯、(甲基)丙烯酸苄酯、苯氧基乙基(甲基)丙烯酸酯、(烷氧基化)壬基苯酚(甲基)丙烯酸酯等。Further, the carboxyl-containing alkali-soluble polymer is obtained by copolymerizing one or more carboxyl-containing comonomer monomers and one or more carboxyl-free comonomer monomers according to any ratio; The carboxyl group-containing copolymerization unit monomer is selected from itaconic acid, crotonic acid, acrylic acid, methacrylic acid, maleic acid half ester, maleic acid, fumaric acid, vinyl acetic acid and anhydride thereof, etc.; The copolymerization unit monomer not containing carboxyl group is selected from methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, (meth)acrylate ) n-butyl acrylate, isobutyl (meth)acrylate, isooctyl (meth)acrylate, lauryl (meth)acrylate, octadecyl (meth)acrylate, 2-hydroxyl (meth)acrylate Ethyl ester, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, ( Meth)acrylonitrile, glycidyl (meth)acrylate, N,N-ethyl (meth)acrylate, N,N-diethyl (meth)acrylate, N,N-diethyl (meth)acrylate Propyl meth(meth)acrylate, N,N-diethyl(meth)propyl acrylate, N,N-dimethyl(meth)butyl acrylate, N,N-diethyl(meth)acrylate ) butyl acrylate, (meth)acrylamide, N-methylol-acrylamide, N-butoxymethyl-acrylamide, styrene, benzyl (meth)acrylate, phenoxyethyl (meth)acrylamide base) acrylate, (alkoxylated) nonylphenol (meth)acrylate, etc.

进一步地,所述含羧基的碱可溶性聚合物的重均分子量为10000-200000,进一步优选10000-120000。Further, the weight average molecular weight of the carboxyl-containing alkali-soluble polymer is 10,000-200,000, more preferably 10,000-120,000.

进一步地,所述含有至少一个可聚合的不饱和键单体,选自三羟甲基丙烷三丙烯酸酯、(乙氧)丙氧基化三羟甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、二季戊四醇六丙烯酸酯、聚乙二醇二丙烯酸酯、聚丙二醇二丙烯酸酯、乙氧基化双酚A二丙烯酸酯、丙氧基化双酚A二丙烯酸酯、甘油三丙酸酯。Further, the monomer containing at least one polymerizable unsaturated bond is selected from trimethylolpropane triacrylate, (ethoxy) propoxylated trimethylolpropane triacrylate, pentaerythritol triacrylate, Pentaerythritol tetraacrylate, dipentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, polyethylene glycol diacrylate, polypropylene glycol diacrylate, ethoxylated bisphenol A diacrylate, propoxylated Hydroxylated bisphenol A diacrylate, glycerol tripropionate.

进一步地,所述光引发剂为2,4,5-三芳基咪唑二聚体或2,4,5-三芳基咪唑二聚体的衍生物。Further, the photoinitiator is 2,4,5-triaryl imidazole dimer or a derivative of 2,4,5-triaryl imidazole dimer.

进一步地,所述光引发剂由引发剂助剂和2,4,5-三芳基咪唑二聚体或2,4,5-三芳基咪唑二聚体的衍生物按照任意比混合而成;所述引发剂助剂由芳香族酮、醌、安息香化合物、苯偶酰衍生物、吖啶衍生物、N-苯基氨基乙酸衍生物、香豆素系化合物,恶唑系化合物中的一种或多种按照任意比混合组成。Further, the photoinitiator is formed by mixing initiator auxiliary agent and 2,4,5-triaryl imidazole dimer or derivatives of 2,4,5-triaryl imidazole dimer in any ratio; The initiator auxiliary agent is one or more of aromatic ketones, quinones, benzoin compounds, benzil derivatives, acridine derivatives, N-phenylaminoacetic acid derivatives, coumarin compounds, and oxazole compounds. A variety of components are mixed in any ratio.

进一步地,所述添加剂由染料、光成色剂、成色热稳定剂、增塑剂、颜料、填料、消泡剂、阻燃剂、稳定剂、流平剂、剥离促进剂、抗氧化剂、香料、成像剂、热交联剂中的一种或多种按照任意配比混合组成。Further, the additives are composed of dyes, photocouplers, color-forming heat stabilizers, plasticizers, pigments, fillers, defoamers, flame retardants, stabilizers, leveling agents, peeling accelerators, antioxidants, spices, One or more of the imaging agent and the thermal crosslinking agent are mixed according to any proportion.

本发明的有益效果在于:本发明采用不同酸值的双层结构的抗蚀剂,在抗蚀剂曝光显影后,形成良好的图形侧边形貌,未曝光的图形胶层能更好地除去。The beneficial effect of the present invention is that: the present invention adopts the resist of double-layer structure with different acid values, and after the resist is exposed and developed, a good graphic side profile is formed, and the unexposed graphic adhesive layer can be better removed .

具体实施方式Detailed ways

本发明一种干膜抗蚀剂层压体,包括支撑层、涂覆于支撑层上方的第一抗蚀剂层以及涂覆与第一抗蚀剂层上方的第二抗蚀剂层;所述第一抗蚀剂层的酸值为80~400mgKOH/g,第二抗蚀剂层的酸值为82~441.2mgKOH/g,并且,第二抗蚀剂层的酸值比第一抗蚀剂层酸值高2~41.2mgKOH/g。A dry film resist laminate of the present invention comprises a support layer, a first resist layer coated above the support layer, and a second resist layer coated above the first resist layer; The acid value of the first resist layer is 80-400mgKOH/g, the acid value of the second resist layer is 82-441.2mgKOH/g, and the acid value of the second resist layer is higher than that of the first resist The acid value of the agent layer is 2-41.2mgKOH/g higher.

本发明采用不同酸值的双层结构的抗蚀剂,使得其在抗蚀剂曝光显影后,形成良好的图形侧边形貌,未曝光的图形胶层能更好地除去。The present invention adopts resists of double-layer structure with different acid values, so that after the resist is exposed and developed, it can form a good pattern side shape, and the unexposed pattern adhesive layer can be removed better.

上述第一抗蚀剂层厚度为5~50微米,第二抗蚀剂层厚度为1-10微米。The thickness of the first resist layer is 5-50 microns, and the thickness of the second resist layer is 1-10 microns.

上述第一抗蚀剂层和第二抗蚀剂层由含羧基的碱可溶性聚合物(A)、含有至少一个可聚合的不饱和键单体(B)、光引发剂(C)、添加剂(D)组成。The above-mentioned first resist layer and the second resist layer are composed of carboxyl-containing alkali-soluble polymer (A), containing at least one polymerizable unsaturated bond monomer (B), photoinitiator (C), additive ( D) Composition.

1.所述含羧基的碱可溶性聚合物(A)的用量占总抗蚀剂重量的45-70%;第一抗蚀剂层和第二抗蚀剂层中,由于含羧基的碱可溶性聚合物的用量不同或者含羧基的碱可溶性聚合物酸值不同,导致两者的酸值不同。两层的酸值高低可通过增加或减少A的用量;或者在合成A时,增加或减少含羧基单体用量等方法进行控制。含羧基的碱可溶性聚合物由一种或多种含羧基的共聚单元单体,和一种或多种不含羧基基团的共聚单元单体按照任意配比共聚而得;其制备方法可用公知的制备方法制备,如溶液聚合、悬浮聚合等。其中,含羧基的共聚单元单体选自衣康酸、巴豆酸、丙烯酸、甲基丙烯酸、马来酸半酯、顺丁烯二酸、反丁烯二酸、乙烯基乙酸及其酸酐等;所述不含羧基基团的共聚单元单体选自(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸十八酯、(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、聚乙二醇单(甲基)丙烯酸酯、聚丙二醇单(甲基)丙烯酸酯、(甲基)丙烯腈、(甲基)丙烯酸缩水甘油酯、N,N-二甲基(甲基)丙烯酸乙酯、N,N-二乙基(甲基)丙烯酸乙酯、N,N-二甲基(甲基)丙烯酸丙酯、N,N-二乙基(甲基)丙烯酸丙酯、N,N-二甲基(甲基)丙烯酸丁酯、N,N-二乙基(甲基)丙烯酸丁酯、(甲基)丙烯酰胺、N-羟甲基-丙烯酰胺、N-丁氧基甲基-丙烯酰胺、苯乙烯、(甲基)丙烯酸苄酯、苯氧基乙基(甲基)丙烯酸酯、(烷氧基化)壬基苯酚(甲基)丙烯酸酯等。1. the consumption of described carboxyl-containing alkali-soluble polymer (A) accounts for 45-70% of total resist weight; In the first resist layer and the second resist layer, due to carboxyl-containing alkali-soluble polymer The amount of the substance is different or the acid value of the carboxyl-containing alkali-soluble polymer is different, resulting in a difference in the acid value of the two. The acid value of the two layers can be controlled by increasing or decreasing the amount of A; or when synthesizing A, increasing or decreasing the amount of carboxyl-containing monomers. Carboxyl-containing alkali-soluble polymers are obtained by copolymerization of one or more carboxyl-containing comonomer monomers and one or more carboxyl-free comonomer monomers in any proportion; its preparation method can be obtained by known Preparation methods, such as solution polymerization, suspension polymerization, etc. Wherein, the copolymerization unit monomer containing carboxyl group is selected from itaconic acid, crotonic acid, acrylic acid, methacrylic acid, maleic acid half ester, maleic acid, fumaric acid, vinyl acetic acid and its anhydride, etc.; The copolymerization unit monomer not containing carboxyl group is selected from methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, (meth)acrylate ) n-butyl acrylate, isobutyl (meth)acrylate, isooctyl (meth)acrylate, lauryl (meth)acrylate, octadecyl (meth)acrylate, 2-hydroxyl (meth)acrylate Ethyl ester, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, ( Meth)acrylonitrile, glycidyl (meth)acrylate, N,N-ethyl (meth)acrylate, N,N-diethyl (meth)acrylate, N,N-diethyl (meth)acrylate Propyl meth(meth)acrylate, N,N-diethyl(meth)propyl acrylate, N,N-dimethyl(meth)butyl acrylate, N,N-diethyl(meth)acrylate ) butyl acrylate, (meth)acrylamide, N-methylol-acrylamide, N-butoxymethyl-acrylamide, styrene, benzyl (meth)acrylate, phenoxyethyl (meth)acrylamide base) acrylate, (alkoxylated) nonylphenol (meth)acrylate, etc.

含羧基的碱可溶性聚合物的重均分子量优选10000-200000,从显影性看,进一步优选120000以下,从提高耐棱角和侧边腐蚀看,优选10000以上。The weight-average molecular weight of the carboxyl-containing alkali-soluble polymer is preferably 10,000-200,000, more preferably 120,000 or less in terms of developability, and preferably 10,000 or more in terms of improving resistance to edge and side corrosion.

为保证第二抗蚀剂层比第一抗蚀剂层酸值高2~41.2mgKOH/g,以下两种方法都是可行的:增加碱可溶性聚合物A在第二抗蚀剂层中的用量;或者在合成第二抗蚀剂层使用的A时,增加含羧基单体用量。In order to ensure that the acid value of the second resist layer is 2-41.2mgKOH/g higher than that of the first resist layer, the following two methods are all feasible: increase the amount of alkali-soluble polymer A in the second resist layer ; Or when synthesizing A used in the second resist layer, increase the amount of carboxyl-containing monomer.

2.上述含有至少一个可聚合的不饱和键单体B的用量,从提高光敏性角度看,优选为抗蚀剂重量的15%或其以上,从最终碱洗去膜角度看,优选为抗蚀剂重量的45%或其以下。含有至少一个可聚合的不饱和键单体选自三羟甲基丙烷三丙烯酸酯、(乙氧)丙氧基化三羟甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、二季戊四醇六丙烯酸酯、聚乙二醇二丙烯酸酯、聚丙二醇二丙烯酸酯、乙氧基化双酚A二丙烯酸酯、丙氧基化双酚A二丙烯酸酯、甘油三丙酸酯。从显影和分辨率的角度看,优选(乙氧)丙氧基化三羟甲基丙烷三丙烯酸酯、(乙氧)丙氧基化双酚A二丙烯酸酯及聚乙二醇二丙烯酸酯。可供选择的商业化单体可选择举例例如,沙多玛牌号SR454、CD542、SR602、SR541、SR480、SR252、SR644等。2. The amount of the above-mentioned monomer B containing at least one polymerizable unsaturated bond is preferably 15% or more of the weight of the resist from the perspective of improving the photosensitivity, and is preferably 15% or more of the resist weight from the perspective of the final alkali wash-off film. 45% or less of the weight of the etchant. Containing at least one polymerizable unsaturated bond monomer selected from trimethylolpropane triacrylate, (ethoxy) propoxylated trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, di Pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, polyethylene glycol diacrylate, polypropylene glycol diacrylate, ethoxylated bisphenol A diacrylate, propoxylated bisphenol A diacrylate Acrylates, Tripropionate. From the viewpoint of development and resolution, (ethoxy)propoxylated trimethylolpropane triacrylate, (ethoxy)propoxylated bisphenol A diacrylate, and polyethylene glycol diacrylate are preferable. Alternative commercial monomers can be selected, for example, Sartomer brand SR454, CD542, SR602, SR541, SR480, SR252, SR644, etc.

第一抗蚀剂层和第二抗蚀剂层中所用的含有至少一个可聚合的不饱和键单体的种类和用量可以相同,亦可不同。The types and amounts of monomers containing at least one polymerizable unsaturated bond used in the first resist layer and the second resist layer may be the same or different.

3.上述光引发剂C的用量为抗蚀剂重量的0.5-10%,光引发剂用量低于0.5%时,其光敏性变差;光引发剂用量高于10%时,其可能导致感光干膜分辨率降低。光引发剂为2,4,5-三芳基咪唑二聚体或2,4,5-三芳基咪唑二聚体的衍生物。可以举例出,2-(邻氯苯基)-4,5-二苯基咪唑二聚物、2-(邻氯苯基)-4,5-二(甲氧基苯基)咪唑二聚物、2-(邻氟苯基)-4,5-二苯基咪唑二聚物、2-(邻甲氧基苯基)-4,5-二苯基咪唑二聚物、2-(对甲氧基苯基)-4,5-二苯基咪唑二聚物等。3. The amount of the above-mentioned photoinitiator C is 0.5-10% of the weight of the resist. When the amount of the photoinitiator is lower than 0.5%, its photosensitivity becomes poor; when the amount of the photoinitiator is higher than 10%, it may cause photosensitivity Dry film resolution is reduced. The photoinitiator is 2,4,5-triaryl imidazole dimer or a derivative of 2,4,5-triaryl imidazole dimer. For example, 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-bis(methoxyphenyl)imidazole dimer , 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, 2-(p-methyl Oxyphenyl)-4,5-diphenylimidazole dimer, etc.

所述引发剂也可以包含有引发剂助剂,引发剂助剂可以列举出,噻吨酮、苯偶姻苯基醚、二本甲酮、苯偶姻甲基醚、N,N'-四甲基-4,4'-二氨基二苯甲酮(米蚩酮)、N,N'-四乙基-4,4'-二氨基二苯甲酮、4-甲氧基-4'-二甲基氨基二苯甲酮、2-苄基-2-二甲基氨基-1-(4-吗啉基苯基)-丁酮-1,2-甲基-1-[4-(甲基硫代)苯基]-2-吗啉代-丙酮-1等芳香族酮,2-乙基蒽醌、菲醌、2-叔丁基蒽醌、八甲基蒽醌、1,2-苯并蒽醌、2,3-苯并蒽醌、2-苯基蒽醌、2,3-二苯基蒽醌、1-氯蒽醌、2-甲基蒽醌、1,4-萘醌、9,10-菲醌、2-甲基1,4-萘醌、2,3-二甲基蒽醌等醌类,安息香甲醚、安息香乙醚、,安息香苯基醚等安息香醚化合物,安息香、甲基安息香、乙基安息香等安息香化合物,苯偶酰二甲基缩酮等苯偶酰衍生物,9-苯基吖啶、1,7-双(9,9'-吖啶)庚烷等吖啶衍生物,N-苯基氨基乙酸等N-苯基氨基乙酸衍生物,香豆素系化合物,恶唑系化合物等。The initiator can also contain initiator auxiliary agent, initiator auxiliary agent can be listed, thioxanthone, benzoin phenyl ether, diphenmethanone, benzoin methyl ether, N,N'-tetra Methyl-4,4'-diaminobenzophenone (Michler's ketone), N,N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxy-4'- Dimethylaminobenzophenone, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1,2-methyl-1-[4-(methyl Aromatic ketones such as thio)phenyl]-2-morpholino-acetone-1, 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2- Benzoanthraquinone, 2,3-Benzoanthraquinone, 2-Phenylanthraquinone, 2,3-Diphenylanthraquinone, 1-Chloroanthraquinone, 2-Methylanthraquinone, 1,4-Naphthoquinone , 9,10-phenanthrene quinone, 2-methyl 1,4-naphthoquinone, 2,3-dimethyl anthraquinone and other quinones, benzoin methyl ether, benzoin ethyl ether, benzoin phenyl ether and other benzoin ether compounds, benzoin , methyl benzoin, ethyl benzoin and other benzoin compounds, benzil derivatives such as benzil dimethyl ketal, 9-phenylacridine, 1,7-bis(9,9'-acridine) heptane Acridine derivatives, N-phenylaminoacetic acid derivatives such as N-phenylaminoacetic acid, coumarin-based compounds, oxazole-based compounds, etc.

第一抗蚀剂层和第二抗蚀剂层中所用的引发剂的种类和用量可以相同,亦可不同。The types and amounts of initiators used in the first resist layer and the second resist layer may be the same or different.

4.除了如上述成分之外,可根据需要,加入添加剂D。添加剂D占抗蚀剂重量的0.01~5%。添加剂为孔雀石绿等染料、无色结晶紫等光成色剂、成色热稳定剂、增塑剂、颜料、填料、消泡剂、阻燃剂、稳定剂、流平剂、剥离促进剂、抗氧化剂、香料、成像剂、热交联剂等中的一种或多种按照任意配比混合组成的混合物。4. In addition to the above ingredients, additive D can be added as needed. Additive D accounts for 0.01-5% by weight of the resist. Additives are dyes such as malachite green, light couplers such as colorless crystal violet, color forming heat stabilizers, plasticizers, pigments, fillers, defoamers, flame retardants, stabilizers, leveling agents, peeling accelerators, anti-foaming agents, etc. A mixture formed by mixing one or more of oxidizing agents, fragrances, imaging agents, thermal crosslinking agents, etc. in any proportion.

第一抗蚀剂层和第二抗蚀剂层中所用的添加剂的种类和用量可以相同,亦可不同。The types and amounts of additives used in the first resist layer and the second resist layer may be the same or different.

本发明的干膜抗蚀剂层压体,可根据需要,将含羧基的碱可溶性聚合物、含有至少一个可聚合的不饱和键单体、光引发剂、添加剂溶解于甲醇、乙醇、异丙醇、丙酮、丁酮、甲基溶纤剂、甲苯、N,N-二甲基甲酰胺、丙二醇甲醚、丙二醇甲醚醋酸酯等溶剂或这些溶剂的混合溶剂中,以固含量10-80%的溶液状态使用。In the dry film resist laminate of the present invention, the carboxyl-containing alkali-soluble polymer, the monomer containing at least one polymerizable unsaturated bond, the photoinitiator, and the additive can be dissolved in methanol, ethanol, isopropyl Alcohol, acetone, butanone, methyl cellosolve, toluene, N,N-dimethylformamide, propylene glycol methyl ether, propylene glycol methyl ether acetate and other solvents or mixed solvents of these solvents, with a solid content of 10-80 % solution state use.

本发明干膜抗蚀剂层压体可通过以下方式获得:例如,分别调制第一抗蚀剂层的溶液、第二抗蚀剂层的溶液,在一定厚度的无色支持体上涂布第一抗蚀剂层的溶液,并将其干燥。干燥后,继续在第一抗蚀剂层上涂布第二抗蚀剂层的溶液,并将其干燥。The dry film resist laminate of the present invention can be obtained by the following methods: for example, prepare the solution of the first resist layer and the solution of the second resist layer respectively, and coat the second resist layer on a colorless support with a certain thickness. a resist layer solution and dry it. After drying, continue to coat the solution of the second resist layer on the first resist layer and dry it.

涂布方式可采用棒涂机涂布、逆转辊涂涂布器、凹版印刷涂布器、逗点涂布器、帘幕涂布机等公知涂布方式进行。干燥方式可采用红外干燥、热风干燥等干燥方式。干燥温度50-120℃下进行1-30分钟。As the coating method, known coating methods such as bar coater coating, reverse roll coater, gravure coater, comma coater, and curtain coater can be used. The drying method can adopt drying methods such as infrared drying and hot air drying. The drying temperature is 50-120°C for 1-30 minutes.

也可以将上述第一抗蚀剂层的溶液、第二抗蚀剂层的溶液通过多层坡流挤压涂布进行一次性涂布。The above-mentioned solution for the first resist layer and the solution for the second resist layer may be applied at once by multilayer slide extrusion coating.

上述无色透明支持体可以是低密度聚乙烯、高密度聚乙烯、聚丙烯、聚酯、聚对苯二甲酸乙二醇酯、聚碳酸酯、聚芳酯、等薄膜。对于干膜抗蚀剂层压体,为了避免水分对其物性和涂布条件造成影响,优选支持体薄膜为聚对苯二甲酸乙二醇酯、聚乙烯,以及聚丙烯薄膜。The above-mentioned colorless and transparent support can be low-density polyethylene, high-density polyethylene, polypropylene, polyester, polyethylene terephthalate, polycarbonate, polyarylate, and other films. For dry film resist laminates, polyethylene terephthalate, polyethylene, and polypropylene films are preferred as the support film in order to prevent moisture from affecting its properties and coating conditions.

无色透明支持体厚度为10-100μm,优选15-80μm,更优选15-40μm的聚对苯二甲酸乙二醇酯薄膜。The colorless transparent support is a polyethylene terephthalate film with a thickness of 10-100 μm, preferably 15-80 μm, more preferably 15-40 μm.

接着,在上述涂布好的干膜抗蚀剂层压体上层层叠用于保护干膜抗蚀剂层压体的聚合物覆盖膜,最终得到干膜。覆盖膜与透明支持体薄膜一样,最好是低透湿性、易剥离的树脂膜,但可透明也可不透明。优选覆盖膜是具有5-100μm厚度的聚对苯二甲酸乙二醇酯、聚乙烯以及聚丙烯等树脂膜。Next, a polymer cover film for protecting the dry film resist laminate is laminated on the above-mentioned coated dry film resist laminate to finally obtain a dry film. Like the transparent support film, the cover film is preferably a resin film with low moisture permeability and easy peeling, but may be transparent or opaque. The cover film is preferably a resin film such as polyethylene terephthalate, polyethylene, and polypropylene having a thickness of 5 to 100 μm.

下面结合实施例对本发明作进一步说明。The present invention will be further described below in conjunction with embodiment.

实施例(实施例1-5,比较例1-3)Embodiment (embodiment 1-5, comparative example 1-3)

(1)准备如下含羧酸的碱溶性聚合物树脂(A)。(1) The following carboxylic acid-containing alkali-soluble polymer resin (A) was prepared.

在氮气气氛下,向装备有加热装置、搅拌桨、蛇形冷凝管、恒压滴液漏斗和温度计的500毫升的四口子烧瓶中加入120毫升丁酮,加入聚合物配方中所使用的全部单体,开启搅拌装置,将加热装置的温度升高至80℃。接着,在氮气气氛下,缓慢向反应瓶中滴加0.8克偶氮二异丁腈的30毫升丁酮溶液,滴加过程持续约1.5小时。滴加完毕后,继续保温4小时。Under a nitrogen atmosphere, add 120 milliliters of methyl ethyl ketone to a 500 milliliter four-necked flask equipped with a heating device, a stirring paddle, a serpentine condenser, a constant pressure dropping funnel and a thermometer, and add all the monomers used in the polymer formula. body, turn on the stirring device, and raise the temperature of the heating device to 80°C. Next, under a nitrogen atmosphere, a solution of 0.8 g of azobisisobutyronitrile in 30 ml of butanone was slowly added dropwise to the reaction flask, and the dropping process lasted for about 1.5 hours. After the dropwise addition was completed, the insulation was continued for 4 hours.

然后,将0.6g的偶氮二异丁腈溶解于40毫升丁酮中,分两次滴加到反应液中,每次滴加时间为15分钟,第一次滴加完后保温1小时后才进行第二次滴加。滴加完后,继续保温2小时。停止加热和搅拌,冷却至室温,取出反应液,得到碱溶性聚合物树脂溶液(A-1),碱溶性聚合物树脂重均分子量为110,000,测得其固体含量为40.1%。Then, 0.6g of azobisisobutyronitrile was dissolved in 40 milliliters of butanone, and was added dropwise to the reaction solution twice, each time of adding was 15 minutes. Just carry out the second dropwise addition. After the dropwise addition, continue to keep warm for 2 hours. Heating and stirring were stopped, cooled to room temperature, and the reaction solution was taken out to obtain an alkali-soluble polymer resin solution (A-1). The weight-average molecular weight of the alkali-soluble polymer resin was 110,000, and its solid content was measured to be 40.1%.

用同样的方法,合成碱溶性聚合物树脂A-2至A-5.聚合物所使用的单体组成质量比、得到的聚合物重均分子量以及固含量如表1所示。The same method was used to synthesize the alkali-soluble polymer resins A-2 to A-5. The mass ratio of the monomers used in the polymers, the weight-average molecular weight and solid content of the polymers obtained are shown in Table 1.

表1Table 1

(2)准备下述含有至少一个可聚合的不饱和键单体(B):(2) Prepare the following monomer (B) containing at least one polymerizable unsaturated bond:

B-1:乙氧基化三羟甲基丙烷三丙烯酸酯(沙多玛单体SR454,乙氧基单元数为3)B-1: Ethoxylated trimethylolpropane triacrylate (Sartomer monomer SR454, the number of ethoxy units is 3)

B-2:乙氧基化双酚A二丙烯酸酯(沙多玛单体SR602,乙氧基单元数为10)B-2: Ethoxylated bisphenol A diacrylate (Sartomer monomer SR602, the number of ethoxy units is 10)

B-3:聚乙二醇(600)二丙烯酸酯(沙多玛单体SR252)B-3: Polyethylene glycol (600) diacrylate (Sartomer monomer SR252)

(3)准备下述光引发剂(C)(3) Prepare the following photoinitiator (C)

C-1:2-(邻氯苯基)-4,5-二苯基咪唑二聚体C-1: 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer

C-2:4,4’-双(二乙基氨基)二苯甲酮C-2: 4,4'-bis(diethylamino)benzophenone

C-3:2-异丙基硫杂蒽酮C-3: 2-Isopropylthioxanthone

(4)准备下述的添加剂(D):(4) Prepare the following additive (D):

D-1:无色结晶紫D-1: colorless crystal violet

D-2:碱性绿颜料D-2: Basic green pigment

D-3:灿烂绿颜料D-3: Brilliant Green Pigment

D-4:三溴甲基苯硫砜D-4: Tribromomethyl sulfone

(5)准备下述溶剂(E):(5) Prepare the following solvent (E):

E-1:丁酮E-1: butanone

(6)抗蚀层溶液配制,如表2所示。(6) Preparation of resist solution, as shown in Table 2.

表2Table 2

(7)按照表2的配比混合均匀后,分别经过充分搅拌、混合,脱泡,按照表3的涂布方式进行涂布。(7) After mixing evenly according to the ratio in Table 2, fully stir, mix, and defoam, respectively, and apply according to the coating method in Table 3.

表3table 3

涂布使用棒涂机将第一抗蚀剂层溶液均匀涂布在作为支持体的18μm厚的聚对苯二甲酸乙二醇酯薄膜表面,在90℃的鼓风干燥箱中干燥2分钟,然后取出,形成厚约20μm的第一抗蚀剂层,继续用棒涂机将第二抗蚀剂层溶液均匀涂在抗蚀剂组合物1涂层表面,在90℃的鼓风干燥箱中再干燥2分钟,最终形成第二抗蚀剂层。干膜抗蚀剂层总厚度为25μm(其中第一抗蚀剂层厚20μm,第二抗蚀剂层厚5μm)。接着,抗蚀剂层表面,贴合作为保护层的25μm厚的聚乙烯薄膜,从而得到干膜抗蚀剂层压体。Coating Use a bar coater to evenly coat the first resist layer solution on the surface of a polyethylene terephthalate film with a thickness of 18 μm as a support, and dry it in a blast drying oven at 90°C for 2 minutes. Then take it out to form a first resist layer with a thickness of about 20 μm, continue to use a bar coater to evenly coat the second resist layer solution on the surface of the resist composition 1 coating, and dry it in a blast drying oven at 90 ° C. Dry for another 2 minutes to finally form the second resist layer. The total thickness of the dry film resist layer is 25 μm (the thickness of the first resist layer is 20 μm, and the thickness of the second resist layer is 5 μm). Next, a 25-μm-thick polyethylene film was bonded to the surface of the resist layer as a protective layer to obtain a dry film resist laminate.

(8)性能评价(8) Performance evaluation

1.基板表面的加工:光敏性和附着力评价用基板,是通过将厚度为1.5mm,层叠了35μm压延铜箔的镀铜层压板表面进行湿式抛光辊抛光后,再进行喷射洗涤抛光(喷射压力为0.2MPa)。1. Processing of the substrate surface: The substrate for photosensitivity and adhesion evaluation is carried out by wet polishing roller polishing on the surface of the copper-clad laminate with a thickness of 1.5mm and laminated with 35μm rolled copper foil, and then performing jet cleaning and polishing (jet cleaning) The pressure is 0.2MPa).

2.层叠:在105℃的轧辊温度下,一边剥离干膜抗蚀剂层压体的保护膜,一边用热轧层压机将抗蚀剂层压在经过表面加工和预热到60℃的镀铜层压板上。压力控制在0.3Mpa,层叠速度为1.5米/分钟。2. Lamination: At a roll temperature of 105°C, while peeling off the protective film of the dry film resist laminate, the resist is laminated on the surface processed and preheated to 60°C with a hot roll laminator. Copper-plated laminate. The pressure is controlled at 0.3Mpa, and the lamination speed is 1.5 m/min.

3.曝光:将有电路图形的菲林片置于支持体上,压紧,利用超高压汞灯进行曝光,调节曝光能量至以21格曝光尺(Stouffer Graphic Arts设备公司)曝光到第8格为止。3. Exposure: Place the film with circuit graphics on the support, press it tightly, and use an ultra-high pressure mercury lamp to expose, and adjust the exposure energy until the 8th grid is exposed with a 21-grid exposure ruler (Stouffer Graphic Arts Equipment Co., Ltd.) .

4.显影:将上述曝光后的抗蚀剂上方的支持体剥离后,在规定的时间里喷洒30℃的1.2质量%的碳酸钠水溶液,溶解去除抗蚀剂层未曝光部分。将未曝光部分的抗蚀剂层完全溶解需要的最少时间作为最小显影时间。4. Development: After peeling off the support above the above-mentioned exposed resist, spray 1.2% by mass sodium carbonate aqueous solution at 30° C. for a predetermined time to dissolve and remove the unexposed portion of the resist layer. The minimum time required for the complete dissolution of the resist layer in the unexposed part is taken as the minimum development time.

5.分辨率评价:在除去所制造的感光干膜抗蚀剂层压体的PE膜后,利用加热压辊在铜板上进行层叠干膜。在此,利用具有曝光部分和未曝光部分的宽度为1:1的布线图案的掩模进行曝光,用最小显影时间的1.5倍显影后,将正常形成了固化抗蚀剂线的最小掩模宽度作为分辨率的值。5. Evaluation of resolution: After removing the PE film of the produced photosensitive dry film resist laminate, a dry film was laminated on a copper plate with a heated press roll. Here, exposure is performed using a mask having a wiring pattern with a width of 1:1 between the exposed portion and the unexposed portion, and after developing at 1.5 times the minimum developing time, the minimum mask width at which the cured resist line is normally formed as a value for resolution.

◎:分辨率值为小于等于15μm;◎: The resolution value is less than or equal to 15μm;

○:分辨率值为大于15μm,小于等于20μm○: The resolution value is greater than 15 μm and less than or equal to 20 μm

△:分辨率值大于20μm△: resolution value greater than 20μm

6.图形侧边形貌评价:在除去所制造的感光干膜抗蚀剂层压体的PE膜后,利用加热压辊在铜板上进行层叠干膜。在此,利用具有曝光部分和未曝光部分的宽度都为15μm的布线图案的掩模进行曝光,用最小显影时间的1.5倍显影后,将正常形成了固化抗蚀剂线条,通过显微镜,观察未曝光部分线条是否除去。以垂直于线条、平行于铜箔表面的残胶宽度大小进行评价,沿着线条找出残胶最大宽度,残胶最大宽度越小,表现越好。6. Evaluation of pattern side profile: After removing the PE film of the manufactured photosensitive dry film resist laminate, a dry film was laminated on a copper plate using a heated press roll. Here, exposure was performed using a mask having a wiring pattern with a width of 15 μm in both the exposed portion and the unexposed portion. After developing at 1.5 times the minimum developing time, lines of the cured resist were normally formed, and observed through a microscope. Whether to remove the exposed part of the line. The width of the residual glue perpendicular to the line and parallel to the surface of the copper foil is evaluated, and the maximum width of the residual glue is found along the line. The smaller the maximum width of the residual glue, the better the performance.

◎:残胶尺寸小于等于0.5μm;◎: The size of residual glue is less than or equal to 0.5μm;

○:残胶尺寸大于0.5μm,小于等于2μm;○: The size of the residual glue is greater than 0.5 μm and less than or equal to 2 μm;

△:残胶尺寸大于2μm;△: The size of the residual glue is greater than 2 μm;

评价结果如表4所示。The evaluation results are shown in Table 4.

由以上测试结果可知,本发明可以提供一种感光干膜抗蚀剂层压体,其在印刷电路板、引线框架、半导体封装、光伏电池片、金属的精密加工等领域中,作为抗蚀阻剂材料,特别对于窄间距的图形线路,显影后可以获得更好的图形侧边形貌,有利于分辨率的提升。From the above test results, it can be seen that the present invention can provide a photosensitive dry film resist laminate, which can be used as a corrosion resist in the fields of printed circuit boards, lead frames, semiconductor packaging, photovoltaic cells, and metal precision processing. Agent materials, especially for narrow-pitch graphic circuits, can obtain better graphic side morphology after development, which is conducive to the improvement of resolution.

Claims (7)

1. a kind of dry film photoresist layered product, which is characterized in that including supporting layer, coated on the first resist above supporting layer Layer and coated on the second resist layer above the first resist layer;The acid value of first resist layer be 105.2 ~ 128.6 mgKOH/g, the acid value of the second resist layer are 115.2 ~ 154.4mgKOH/g, also, the acid value of the second resist layer It is higher 2 ~ 41.2mgKOH/g than the first resist layer acid value;
The first resist layer thickness is 5 ~ 50 microns, and the second resist layer thickness is 1-10 microns;
Carboxylic alkali-soluble polymer that first resist layer and the second resist layer are 45 ~ 70% by mass fraction, Mass fraction be 15 ~ 45% containing at least one polymerizable unsaturated bond monomer, mass fraction be 0.5 ~ 10% it is light-initiated Agent, the additive that mass fraction is 0.01 ~ 5% form.
2. dry film photoresist layered product according to claim 1, which is characterized in that the carboxylic alkali-soluble polymerization Object by the copolymerization units monomer of one or more carboxylic copolymerization units monomers and one or more not carboxyl groups according to Arbitrary proportioning is copolymerized and obtains;The carboxylic copolymerization units monomer be selected from itaconic acid, crotonic acid, acrylic acid, methacrylic acid, Maleic acid half ester, maleic acid, fumaric acid, vinyl acetic acid and its acid anhydrides;The copolymerization list of the not carboxyl group First monomer is selected from(Methyl)Methyl acrylate,(Methyl)Ethyl acrylate,(Methyl)Propyl acrylate,(Methyl)Acrylic acid isopropyl Ester,(Methyl)N-butyl acrylate,(Methyl)Isobutyl acrylate,(Methyl)Isooctyl acrylate monomer,(Methyl)Lauryl Ester,(Methyl)Octadecyl acrylate,(Methyl)2-Hydroxy ethyl acrylate,(Methyl)2-hydroxypropyl acrylate,(Methyl) Acrylic acid -4- hydroxybutyls, polyethyleneglycol(Methyl)Acrylate, polypropylene glycol list(Methyl)Acrylate,(Methyl)Third Alkene nitrile,(Methyl)Glycidyl acrylate, N, N- dimethyl(Methyl)Ethyl acrylate, N, N- diethyl(Methyl)Acrylic acid Ethyl ester, N, N- dimethyl(Methyl)Propyl acrylate, N, N- diethyl(Methyl)Propyl acrylate, N, N- dimethyl(Methyl)Third Olefin(e) acid butyl ester, N, N- diethyl(Methyl)Butyl acrylate,(Methyl)Acrylamide, N- methylols-acrylamide, N- butoxy Methyl-propen amide, styrene,(Methyl)Benzyl acrylate, Phenoxyethyl(Methyl)Acrylate, nonyl phenol(Methyl) Acrylate.
3. dry film photoresist layered product according to claim 2, which is characterized in that the carboxylic alkali-soluble polymerization The weight average molecular weight of object is 10000-200000.
4. dry film photoresist layered product according to claim 1, which is characterized in that described containing at least one polymerizable Unsaturated bond monomer, selected from trimethylolpropane trimethacrylate, propoxylation trimethylolpropane trimethacrylate, Ji Wusi Alcohol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol tetraacrylate, Dipentaerythritol Pentaacrylate, two Six acrylate of pentaerythrite, polyethyleneglycol diacrylate, polypropyleneglycol diacrylate, bis- propylene of Ethoxylated bisphenol A Acid esters, propoxylated bisphenol diacrylate, glycerin tripropionate.
5. dry film photoresist layered product according to claim 1, which is characterized in that the photoinitiator is 2,4,5- tri- virtues The derivative of base imidazoles dimer or 2,4,5- triarylimidazoles dimers.
6. dry film photoresist layered product according to claim 1, which is characterized in that the photoinitiator is by initiator aid It is mixed according to arbitrary ratio with the derivative of 2,4,5- triarylimidazoles dimer or 2,4,5- triarylimidazoles dimers;Institute Initiator aid is stated by aromatic ketone, quinone, benzoin compound, benzil derivatives, acridine derivatives, N- phenyl amino second Acid derivative, coumarin series compounds, one or more in oxazole based compound are according to arbitrary than mixing composition.
7. dry film photoresist layered product according to claim 1, which is characterized in that the additive is by dyestuff, light quality Agent, plasticizer, pigment, filler, antifoaming agent, fire retardant, stabilizer, levelling agent, stripping accelerating agent, antioxidant, fragrance, imaging It is one or more according to arbitrary proportioning mixing composition in agent, thermal cross-linking agent.
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CN105511227B (en) * 2015-12-26 2019-08-02 杭州福斯特应用材料股份有限公司 A kind of dry film resist with good hole masking function and laminated body thereof
CN105676593B (en) * 2016-01-19 2019-07-16 杭州福斯特应用材料股份有限公司 A kind of photosensitive dry film of stable storing and preparation method thereof
CN107942618B (en) * 2017-11-29 2021-02-05 浙江福斯特新材料研究院有限公司 High-adhesion quick-developable dry film resist
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CN112824973A (en) * 2019-11-20 2021-05-21 浙江福斯特新材料研究院有限公司 Dry film resist laminate
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